Method and apparatus for making devices
    48.
    发明授权
    Method and apparatus for making devices 失效
    制造装置的方法和装置

    公开(公告)号:US06973710B2

    公开(公告)日:2005-12-13

    申请号:US10197462

    申请日:2002-07-18

    摘要: A method and an apparatus for manufacturing a device are provided. The method and the apparatus can form micro wiring without undesired wetting and spreading using an inexpensive functional-liquid supplying method. A method for forming a device, such as a radiofrequency identification tag, includes: making patterns at a plurality of sections having different degrees of affinity to the functional liquid on a substrate to form the device; and supplying the functional liquid to the selected section having high affinity to the functional liquid. Forming the plurality of sections having different degrees of affinity to the functional liquid includes, for example: supplying an organosiloxane film on the substrate, and exposing the organosiloxane film through an optical mask.

    摘要翻译: 提供了一种用于制造装置的方法和装置。 该方法和装置可以使用廉价的功能液供应方法形成微布线而不需要不必要的润湿和扩散。 用于形成诸如射频识别标签的装置的方法包括:在与衬底上的功能液体具有不同程度的亲和力的多个部分上形成图案以形成装置; 并将所述功能液体供应到对所述功能液体具有高亲和力的选定部分。 形成与功能性液体具有不同程度的亲和力的多个部分包括例如:在基板上供给有机硅氧烷膜,并通过光学掩模使有机硅氧烷膜曝光。

    Display apparatus
    50.
    发明授权
    Display apparatus 有权
    显示装置

    公开(公告)号:US06862011B2

    公开(公告)日:2005-03-01

    申请号:US10337351

    申请日:2003-01-07

    摘要: A current-drive thin-film transistor display apparatus that simultaneously achieves a reduction in the off-current of a switching thin-film transistor and an increase in the on-current of a current thin-film transistor.In an exemplary embodiment, the switching thin-film transistor is formed as a transistor of lightly doped drain structure or offset structure while the current thin-film transistor is formed as a transistor of self-alignment structure. Alternatively, each of the switching thin-film transistor and the current thin-film transistor is formed as a transistor of lightly doped drain structure or offset structure, and the lightly doped drain length or offset length of the switching thin-film transistor is increased relative to that of the current thin-film transistor.

    摘要翻译: 同时实现开关薄膜晶体管的截止电流的降低和电流薄膜晶体管的导通电流的增加的电流驱动薄膜晶体管显示装置。在示例性实施例中,开关 薄膜晶体管形成为轻掺杂漏极结构或偏移结构的晶体管,而当前薄膜晶体管形成为自对准结构的晶体管。 或者,开关薄膜晶体管和电流薄膜晶体管中的每一个形成为轻掺杂漏极结构或偏移结构的晶体管,并且开关薄膜晶体管的轻掺杂漏极长度或偏移长度相对增加 到目前的薄膜晶体管的。