公开(公告)号：US20120193715A1

公开(公告)日：2012-08-02

申请号：US13442008

申请日：2012-04-09

申请人： Sebastian Ulrich Engelmann ,  Nicholas C.M. Fuller ,  Eric Andrew Joseph ,  Isaac Lauer ,  Ryan M. Martin ,  James Vichiconti ,  Ying Zhang

发明人： Sebastian Ulrich Engelmann ,  Nicholas C.M. Fuller ,  Eric Andrew Joseph ,  Isaac Lauer ,  Ryan M. Martin ,  James Vichiconti ,  Ying Zhang

IPC分类号： H01L29/772

CPC分类号： H01L29/7848 ,  H01L21/0237 ,  H01L21/02639 ,  H01L21/3065 ,  H01L21/3083 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/78 ,  Y10S438/938

摘要： A trench is formed by an anisotropic etch in a semiconductor material layer employing a masking layer, which can be gate spacers. In one embodiment, an adsorbed fluorine layer is provided at a cryogenic temperature only on vertical sidewalls of the semiconductor structure including the sidewalls of the trench. The adsorbed fluorine layer removes a controlled amount of the underlying semiconductor material once the temperature is raised above the cryogenic temperature. The trench can be filled with another semiconductor material to generate stress in the semiconductor material layer. In another embodiment, the semiconductor material is laterally etched by a plasma-based etch at a controlled rate while a horizontal portion of a contiguous oxide liner prevents etch of the semiconductor material from the bottom surface of the trench.

摘要翻译： 通过使用可以是栅极间隔物的掩模层的半导体材料层中的各向异性蚀刻形成沟槽。 在一个实施例中，仅在包括沟槽的侧壁的半导体结构的垂直侧壁处在低温温度下提供吸附的氟层。 一旦温度升高到低于低温的温度，吸附的氟层就可去除受控量的底层半导体材料。 沟槽可以用另一种半导体材料填充以在半导体材料层中产生应力。 在另一个实施例中，通过基于等离子体的蚀刻以受控的速率横向蚀刻半导体材料，而邻接的氧化物衬垫的水平部分防止半导体材料从沟槽的底表面蚀刻。

公开(公告)号：US08206766B2

公开(公告)日：2012-06-26

申请号：US11909265

申请日：2006-03-20

申请人： Ying Zhang ,  Xiaoqin Wu ,  Yu Zhang ,  Genyi Zhang ,  Dingding Luo ,  Yi Dong

发明人： Ying Zhang ,  Xiaoqin Wu ,  Yu Zhang ,  Genyi Zhang ,  Dingding Luo ,  Yi Dong

IPC分类号： A23L3/34

CPC分类号： A23L3/3472 ,  A23B4/10 ,  A23B4/18 ,  A23B7/154 ,  A23B7/16 ,  A23F5/14 ,  A23L3/3463 ,  A23L5/27 ,  A23L7/10 ,  A23L11/34 ,  A23L19/18 ,  A23L33/105 ,  A24B15/302

摘要： A method for using a bamboo leaf extract as an acrylamide inhibitor for heat processing food, includes adding to the bamboo leaf extract at least one selected from a group consisting of ginkgo extract, tea extract, rosemary extract, apple polyphenol extract, haw extract, onion extract, licorice extract, root of kudzuvine extract, grape seed extract and leech extract; and preparing a composition, in which the bamboo leaf extract takes up 34-95% of the total weight of the composition. The bamboo leaf extract used as the acrylamide inhibitor in food systems has an inhibiting rate to acrylamide formation of up to 15-98%.

摘要翻译： 使用竹叶提取物作为加热食品的丙烯酰胺抑制剂的方法包括向竹叶提取物中加入至少一种选自银杏提取物，茶提取物，迷迭香提取物，苹果多酚提取物，葫芦提取物，洋葱 提取物，甘草提取物，葛根提取物，葡萄籽提取物和水蛭提取物; 并制备竹叶提取物占组合物总重量的34-95％的组合物。 用作食品体系中丙烯酰胺抑制剂的竹叶提取物对丙烯酰胺的形成抑制率高达15-98％。

公开(公告)号：US08202780B2

公开(公告)日：2012-06-19

申请号：US12533389

申请日：2009-07-31

申请人： Zhibin Ren ,  Xinhui Wang ,  Kevin K. Chan ,  Ying Zhang

发明人： Zhibin Ren ,  Xinhui Wang ,  Kevin K. Chan ,  Ying Zhang

IPC分类号： H01L21/336

CPC分类号： H01L29/66795 ,  H01L29/785

摘要： A method for manufacturing a FinFET device includes: providing a substrate having a mask disposed thereon; covering portions of the mask to define a perimeter of a gate region; removing uncovered portions of the mask to expose the substrate; covering a part of the exposed substrate with another mask to define at least one fin region; forming the at least one fin and the gate region through both masks and the substrate, the gate region having side walls; disposing insulating layers around the at least one fin and onto the side walls; disposing a conductive material into the gate region and onto the insulating layers to form a gate electrode, and then forming source and drain regions.

摘要翻译： 一种制造FinFET器件的方法包括：提供其上设置有掩模的衬底; 覆盖掩模的部分以限定栅极区域的周边; 去除所述掩模的未覆盖部分以暴露所述基底; 用另一掩模覆盖暴露的基底的一部分以限定至少一个鳍片区域; 通过所述掩模和所述基板形成所述至少一个翅片和所述栅极区域，所述栅极区域具有侧壁; 将所述至少一个翅片周围的绝缘层设置在所述侧壁上; 将导电材料设置在栅极区域和绝缘层上以形成栅电极，然后形成源极和漏极区域。

公开(公告)号：US20120051216A1

公开(公告)日：2012-03-01

申请号：US12976067

申请日：2010-12-22

申请人： Ying Zhang ,  Ingemar Johansson ,  Howard Green

发明人： Ying Zhang ,  Ingemar Johansson ,  Howard Green

IPC分类号： H04L12/26

CPC分类号： H04L47/2483 ,  H04L12/4633 ,  H04L47/115 ,  H04L47/12 ,  H04L47/127 ,  H04L47/14 ,  H04L47/22 ,  H04L47/26 ,  H04L47/32 ,  H04L61/2592 ,  H04W28/0231 ,  H04W28/0242 ,  H04W28/0284 ,  H04W28/0289 ,  H04W28/08 ,  H04W28/12 ,  H04W52/343 ,  H04W84/042

摘要： A method for localized congestion exposure within a local loop in a cellular network that is performed by a localized congestion exposure receiver node of the local loop. The method includes receiving downlink packets destined for a downstream user device. The downlink packets have headers that indicate a level of congestion experienced by the downlink packets. The headers also indicate a level of expected downstream congestion declared by an upstream node. The method also includes forwarding the downlink packets to the downstream user device through a wireless connection. The method further includes sending packets upstream that have feedback indicative of the level of congestion experienced by the downlink packets and any congestion experienced within the localized congestion exposure receiver node.

摘要翻译： 一种在本地环路的本地拥塞暴露接收器节点执行的蜂窝网络中本地环路内的局部拥塞暴露的方法。 该方法包括接收去往下游用户设备的下行链路分组。 下行链路分组具有指示下行链路分组经历的拥塞的级别的报头。 标头还指示由上游节点声明的预期下游拥塞的级别。 该方法还包括通过无线连接将下行链路分组转发到下游用户设备。 该方法还包括向上游发送具有指示下行链路分组经历的拥塞的级别以及局部拥塞暴露接收机节点内经历的任何拥塞的反馈的分组。

公开(公告)号：US20110311825A1

公开(公告)日：2011-12-22

申请号：US12820870

申请日：2010-06-22

申请人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Ryan M. Martin ,  Ying Zhang

发明人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Ryan M. Martin ,  Ying Zhang

IPC分类号： B32B5/28

CPC分类号： C23C16/26 ,  C23C16/56 ,  H01J9/025 ,  H01J2201/30469 ,  H01L21/28562 ,  H01L21/31138 ,  H01L21/76837 ,  H01L21/76885 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10T428/30 ,  H01L2924/00

摘要： The present disclosure relates to a method for selectively etching-back a polymer matrix to expose tips of carbon nanotubes comprising: a. growing carbon nanotubes on a conductive substrate; b. filling the gap around the carbon nanotubes with a polymeric fill matrix comprising at least one latent photoacid generator; and c. selectively etching-back the polymeric fill matrix to expose tips of the carbon nanotubes.

摘要翻译： 本公开涉及一种用于选择性地蚀回聚合物基质以暴露碳纳米管尖端的方法，其包括：a。 在导电基底上生长碳纳米管; b。 用包含至少一个潜在光酸产生剂的聚合物填充基质填充碳纳米管周围的间隙; 和c。 选择性地回蚀聚合物填充基质以暴露碳纳米管的尖端。

公开(公告)号：US20110267982A1

公开(公告)日：2011-11-03

申请号：US12771283

申请日：2010-04-30

申请人： Ying Zhang ,  Gabe Hoffmann

发明人： Ying Zhang ,  Gabe Hoffmann

IPC分类号： H04L12/28

CPC分类号： H04W24/02 ,  H04B7/2606 ,  H04L45/48 ,  H04W24/08 ,  H04W40/12 ,  H04W84/047 ,  H04W84/18

摘要： A system and method for determining an optimal backbone for a robotic relay network are provided. A robotic relay network comprising a plurality of nodes including a base station node, one or more mobile relay nodes, and one or more user nodes is provided. A signal strength value for each pair-wise communication link between each of the nodes is identified. A weight function is applied to each communication link value to determine a communication link weight. An optimal backbone tree is determined from the communication link weights.

摘要翻译： 提供了一种用于确定机器人中继网络的最佳主干的系统和方法。 提供了包括多个节点的机器人中继网络，包括基站节点，一个或多个移动中继节点和一个或多个用户节点。 识别每个节点之间的每个成对通信链路的信号强度值。 对每个通信链路值应用权重函数以确定通信链路权重。 从通信链路权重确定最佳主干树。

公开(公告)号：US20110256212A1

公开(公告)日：2011-10-20

申请号：US13032403

申请日：2011-02-22

申请人： Ying Zhang ,  Jiangbing Zhou ,  Hao Zhang

发明人： Ying Zhang ,  Jiangbing Zhou ,  Hao Zhang

IPC分类号： A61K9/127 ,  A61K31/47 ,  A61K31/4709 ,  A61K31/704 ,  A61K31/475 ,  A61K31/4745 ,  A61K33/24 ,  A61K31/519 ,  A61K31/7068 ,  A61K31/5377 ,  A61K31/517 ,  A61K31/7048 ,  A61K31/513 ,  A61K31/675 ,  A61K31/52 ,  A61K31/7076 ,  A61P35/00 ,  A61P35/02 ,  A61P35/04 ,  C12N5/095

CPC分类号： A61K31/47

摘要： 8-quinolinol (8Q) and derivatives thereof for use in the treatment of proliferative diseases such as cancer, in particular slow metabolizing quiescent cancer stem cells.

摘要翻译： 8-羟基喹啉（8Q）及其衍生物，用于治疗增殖性疾病如癌症，特别是慢代谢静止型干细胞。

公开(公告)号：US20110241650A1

公开(公告)日：2011-10-06

申请号：US13164723

申请日：2011-06-20

申请人： Ying Zhang

发明人： Ying Zhang

IPC分类号： G01R19/00

CPC分类号： G01N27/404

摘要： An electrochemical sensor to measure disinfectants is provided. In accordance with one aspect of the invention, the sensor has a silver working electrode disposed in an electrolyte proximate a porous membrane. There is a reference electrode made of silver in contact with the electrolyte. The chemical composition of electrolyte contains one or more anions that make the potential at the reference electrode higher than 0.35 V versus standard hydrogen electrode. The anions form silver salt with solubility higher than the solubility of silver chloride. The voltage at the working electrode versus the reference electrode is maintained negative to keep the background current small enough while maintains the feasibility to reduce disinfectants. Solid phase silver salt of the anions is added within the sensor body, which will prevent poisoning the reference electrode by halide anions diffused into the electrolyte.

摘要翻译： 提供了一种测量消毒剂的电化学传感器。 根据本发明的一个方面，传感器具有设置在靠近多孔膜的电解质中的银工作电极。 存在与电解质接触的由银制成的参比电极。 电解液的化学成分含有一个或多个阴极，使参考电极的电位高于0.35V，而不是标准氢电极。 阴离子形成银盐，其溶解度高于氯化银的溶解度。 工作电极与参比电极的电压保持不变，以保持背景电流足够小，同时保持降低消毒剂的可行性。 阴离子的固相银盐被添加到传感器体内，这将防止参比电极通过扩散到电解质中的卤化物阴离子中毒。

公开(公告)号：US20110152258A1

公开(公告)日：2011-06-23

申请号：US12949741

申请日：2010-11-18

申请人： Prabha N. Ibrahim ,  Wayne Spevak ,  Hanna Cho ,  Songyuan Shi ,  Chao Zhang ,  Ying Zhang

发明人： Prabha N. Ibrahim ,  Wayne Spevak ,  Hanna Cho ,  Songyuan Shi ,  Chao Zhang ,  Ying Zhang

IPC分类号： A61K31/5377 ,  C07D487/04 ,  A61K31/519 ,  C07D413/14 ,  C07D471/04 ,  A61K31/437 ,  A61P9/00 ,  A61P35/00 ,  A61P25/28 ,  A61P1/16 ,  A61P25/16 ,  A61P13/12 ,  A61P29/00 ,  A61P21/00

CPC分类号： C07D487/04 ,  A61K31/437 ,  A61K31/519 ,  A61K31/5377 ,  C07D401/04 ,  C07D403/04 ,  C07D471/04

摘要： Compounds and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described. In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on at least one Raf protein kinase. In certain aspects and embodiments, the described compounds are active in inhibiting proliferation of a Ras mutant cell line. Also described are methods of use thereof to treat diseases and conditions, including diseases and conditions associated with activity of B-Raf V600E mutant protein kinase, including melanoma, glioma, glioblastoma multiforme, pilocytic astrocytoma, colorectal cancer, thyroid cancer, lung cancer, ovarian cancer, prostate cancer, liver cancer, gallbladder cancer, gastrointestinal stromal tumors, biliary tract cancer, and cholangiocarcinoma. Also described are methods of use thereof to treat diseases and conditions, including diseases and conditions associated with activity of c-Raf-1 protein kinase, including acute pain, chronic pain or polycystic kidney disease.

摘要翻译： 其化合物及其盐，其制剂，其缀合物，其衍生物，其形式及用途。 在某些方面和实施方案中，所述的化合物或其盐，其制剂，其缀合物，其衍生物，其形式在至少一种Raf蛋白激酶上具有活性。 在某些方面和实施方案中，所述化合物在抑制Ras突变细胞系的增殖中是有活性的。 还描述了其用于治疗疾病和病症的方法，包括与B-Raf V600E突变蛋白激酶（包括黑素瘤，神经胶质瘤，多形性成胶质细胞瘤，纤维细胞性星形细胞瘤，结肠直肠癌，甲状腺癌，肺癌，卵巢）的活动相关的疾病和病症 癌症，前列腺癌，肝癌，胆囊癌，胃肠道间质瘤，胆道癌和胆管癌。 还描述了其用于治疗疾病和病症的方法，包括与c-Raf-1蛋白激酶的活性相关的疾病和病症，包括急性疼痛，慢性疼痛或多囊肾病。

公开(公告)号：US20110143482A1

公开(公告)日：2011-06-16

申请号：US13005821

申请日：2011-01-13

申请人： Solomon Assefa ,  Jack O. Chu ,  Martin M. Frank ,  William M. Green ,  Young-hee Kim ,  George G. Totir ,  Joris Van Campenhout ,  Yurri A. Vlasov ,  Ying Zhang

发明人： Solomon Assefa ,  Jack O. Chu ,  Martin M. Frank ,  William M. Green ,  Young-hee Kim ,  George G. Totir ,  Joris Van Campenhout ,  Yurri A. Vlasov ,  Ying Zhang

IPC分类号： H01L31/18

CPC分类号： H01L31/1804 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/136 ,  G02B2006/12123 ,  H01L31/109 ,  H01L31/1812 ,  Y02E10/547 ,  Y02P70/521

摘要： A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.

摘要翻译： 在第一外延硅层的顶表面上外延地形成第一硅锗合金层，第二外延硅层，第二硅锗层和锗层的垂直叠层。 第二外延硅层，第二硅锗层和锗层通过介电盖部分，电介质间隔物和第一硅锗层被图案化和封装。 在第一和第二硅层之间去除硅锗层以形成硅锗台面结构，其结构上支撑包括硅部分，硅锗合金部分，锗光电检测器和介电帽部分的叠层的悬垂结构。 锗光电探测器由硅锗台面结构悬挂而不邻接硅波导。 锗扩散到硅波导和锗检测器中的缺陷密度被最小化。