公开(公告)号：US07863163B2

公开(公告)日：2011-01-04

申请号：US11644673

申请日：2006-12-22

申请人： Matthias Bauer

发明人： Matthias Bauer

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： C30B25/02 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639

摘要： A method for depositing a carbon doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 700 torr in a process chamber housing a patterned substrate having exposed single crystal material. The method further comprises providing a flow of a silicon source gas to the process chamber. The silicon source gas comprises dichlorosilane. The method further comprises providing a flow of a carbon precursor to the process chamber. The method further comprises selectively depositing the carbon doped epitaxial semiconductor layer on the exposed single crystal material.

摘要翻译： 沉积碳掺杂外延半导体层的方法包括在容纳具有暴露的单晶材料的图案化衬底的处理室中保持大于约700托的压力。 该方法还包括向处理室提供硅源气体的流动。 硅源气体包括二氯硅烷。 该方法还包括向处理室提供碳前体的流动。 该方法还包括在暴露的单晶材料上选择性地沉积碳掺杂的外延半导体层。

公开(公告)号：US20100093159A1

公开(公告)日：2010-04-15

申请号：US12639388

申请日：2009-12-16

申请人： Matthias Bauer

发明人： Matthias Bauer

IPC分类号： H01L21/205 ,  H01L21/306

CPC分类号： C23C16/04 ,  C23C16/24 ,  C23C16/45514 ,  C23C16/45523 ,  C30B25/02 ,  C30B33/12 ,  C30B35/00

摘要： Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include simultaneous supply of precursors and etchants for selective deposition, or sequential supply for cyclical blanket deposition and selective etching. In either case, precursors and etchants are provided along separate flow paths that intersect in the relatively open reaction space, rather than in more confined upstream locations.

摘要翻译： 用于膜的选择性外延形成的方法和装置将反应性物质分别注入到CVD室中。 该方法对于使用前体和蚀刻剂的挥发性组合的选择性沉积特别有用。 形成过程包括同时供应用于选择性沉积的前体和蚀刻剂，或用于循环毯覆层沉积和选择性蚀刻的顺序供应。 在任一种情况下，前沿和蚀刻剂沿着在相对开放的反应空间中相交的单独的流动路径提供，而不是在更限制的上游位置。

公开(公告)号：US07289865B2

公开(公告)日：2007-10-30

申请号：US10892013

申请日：2004-07-14

申请人： Matthias Bauer

发明人： Matthias Bauer

IPC分类号： G06F19/00

CPC分类号： H01L22/20 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method to optimize semiconductor processing equipment (hardware settings and process conditions) to minimize non-uniformities within a wafer based on linescan measurements and a calculation of or prediction for a polar map. Measurements of a metrology value are taken at a number of points along a linescan (or two orthogonal linescans) on the wafer surface for a number of wafer processed in a set of experiments in which one equipment setting or process parameter is adjusted per experiment. The raw data are then normalized and weighted in accordance with the radial distance from the center of the wafer. Standard deviations of different metrology values within the wafer are then calculated. The setting can then be further adjusted to predict and to minimize the standard deviations, and therefore non-uniformity of the metrology values within the wafer, using the method without processing any additional test wafers.

摘要翻译： 一种优化半导体处理设备（硬件设置和工艺条件）的方法，用于基于线扫测量和极坐标图的计算或预测来最小化晶片内的不均匀性。 在一组实验中处理数个晶片的晶圆表面沿线（或两个正交线条）的数个点进行测量值的测量，其中每个实验调整一个设备设置或工艺参数。 然后根据距晶片中心的径向距离对原始数据进行归一化和加权。 然后计算晶片内不同计量值的标准偏差。 然后可以进一步调整该设置，以便使用该方法来预测和最小化标准偏差，从而使晶片内的度量值不均匀，而不处理任何另外的测试晶片。

公开(公告)号：US09014877B2

公开(公告)日：2015-04-21

申请号：US13525282

申请日：2012-06-16

申请人： Burkhard Gölling ,  Frank Haucke ,  Matthias Bauer ,  Wolfgang Nitsche ,  Inken Peltzer

发明人： Burkhard Gölling ,  Frank Haucke ,  Matthias Bauer ,  Wolfgang Nitsche ,  Inken Peltzer

IPC分类号： B64C15/00 ,  B64C29/00 ,  B64C23/00

CPC分类号： B64C23/005 ,  B64C9/16 ,  B64C9/38 ,  B64C13/18 ,  B64C21/04 ,  B64C29/0025 ,  Y02T50/166

摘要： An aircraft with aerofoils including a main wing and a control flap that includes an adjustment flap. The aircraft includes an actuator for the control flap, as well as a sensor device for acquiring the position of the control flap, an arrangement of flow-influencing devices for influencing the fluid that flows over a segment of the main wing, and flow-state sensor devices for measuring the flow state. The aircraft includes a flight control device connected to the sensor device for acquiring the position of the control flap and to the flow-state sensor devices, and connected to the actuator and flow-influencing devices for transmitting actuating commands, and a flight-state sensor device connected to the flight control device for transmitting flight states. The flight control device includes a function that selects the flow-influencing devices that are operated for optimizing local lift coefficients on the aerofoil, depending on the flight state.

摘要翻译： 具有机翼的飞机包括主翼和包括调节翼片的控制翼片。 飞机包括用于控制翼片的致动器，以及用于获取控制翼片的位置的传感器装置，用于影响流过主翼片段的流体的流动影响装置的布置，以及流动状态 用于测量流动状态的传感器装置。 飞机包括连接到传感器装置的飞行控制装置，用于获取控制翼片和流动状态传感器装置的位置，并连接到用于传送致动指令的致动器和流量影响装置，以及飞行状态传感器 连接到飞行控制装置的装置用于传送飞行状态。 飞行控制装置包括根据飞行状态选择用于优化机翼上的局部升力系数的流量影响装置的功能。

公开(公告)号：US08728239B2

公开(公告)日：2014-05-20

申请号：US13194799

申请日：2011-07-29

申请人： Matthias Bauer ,  Gregory M Bartlett

发明人： Matthias Bauer ,  Gregory M Bartlett

IPC分类号： C23C16/455 ,  C23C16/52 ,  H01L21/306 ,  H01L21/67

CPC分类号： H01L21/67017 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/67069 ,  Y10T137/0357

摘要： A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line. The gas panel is configured to substitute the mass flow rate of the deposition vent line with the mass flow rate of the deposition process lines, such that when the deposition vent line is directed to the reactor chamber the deposition process lines are directed to the vent line and when the deposition vent line is directed to the vent line the deposition process lines are directed to the reactor chamber. The substitution of the two mass flow rates maintains a constant mass flow rate of gases to the reactor chamber throughout the deposition process step.

公开(公告)号：US20130029496A1

公开(公告)日：2013-01-31

申请号：US13194799

申请日：2011-07-29

申请人： Matthias Bauer ,  Gregory M. Bartlett

发明人： Matthias Bauer ,  Gregory M. Bartlett

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/67017 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/67069 ,  Y10T137/0357

摘要： A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line. The gas panel is configured to substitute the mass flow rate of the deposition vent line with the mass flow rate of the deposition process lines, such that when the deposition vent line is directed to the reactor chamber the deposition process lines are directed to the vent line and when the deposition vent line is directed to the vent line the deposition process lines are directed to the reactor chamber. The substitution of the two mass flow rates maintains a constant mass flow rate of gases to the reactor chamber throughout the deposition process step.

摘要翻译： 根据本发明的各个方面的气体面板被配置为在沉积工艺步骤期间将恒定的气体流量传送到反应室。 在一个实施例中，气体面板包括具有沉积注入管线，沉积排放管线和至少一个沉积工艺气体管线的沉积子板。 沉积注入管线将载气的质量流量提供给反应室。 每个沉积工艺气体管线可以包括一对切换阀，其被配置为选择性地将沉积工艺气体引导到反应室或排气管线。 沉积排气管线还包括切换阀，其被配置为选择性地引导载气的第二质量流量，其等于所有沉积处理气体的质量流量与反应室或排气管线的总和。 气体面板被配置为以沉积处理线的质量流率代替沉积排气管线的质量流率，使得当沉积排气管线被引导到反应器室时，沉积工艺管线被引导到排放管线 并且当沉积排气管线被引导到排气管线时，沉积工艺管线被引导到反应器室。 在整个沉积工艺步骤中，两个质量流速的取代保持了气体到反应器室的恒定质量流量。

公开(公告)号：US07687383B2

公开(公告)日：2010-03-30

申请号：US11343244

申请日：2006-01-30

申请人： Matthias Bauer

发明人： Matthias Bauer

IPC分类号： H01L21/04

CPC分类号： H01L29/7848 ,  C23C16/04 ,  C23C16/22 ,  C23C16/24 ,  C23C16/32 ,  C23C16/325 ,  C23C16/45512 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/32056 ,  H01L21/3215 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×1020 atoms cm−3 of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

摘要翻译： 含有相对高含量的III族或V族掺杂剂的含Si膜的方法涉及使用丙硅烷和掺杂剂前体的化学气相沉积。 可以获得极高水平的取代掺入，包括含有电活性掺杂剂的至少约3×1020原子cm -3的晶体硅膜。 通过在沉积期间引入蚀刻剂气体，可将选择性地掺杂的含Si薄膜选择性地沉积在混合基板的晶体表面上。

公开(公告)号：US20090163001A1

公开(公告)日：2009-06-25

申请号：US11963627

申请日：2007-12-21

申请人： Matthias Bauer

发明人： Matthias Bauer

IPC分类号： H01L21/20

CPC分类号： C23C16/04 ,  C23C16/24 ,  C23C16/45514 ,  C23C16/45523 ,  C30B25/02 ,  C30B33/12 ,  C30B35/00

摘要： Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include simultaneous supply of precursors and etchants for selective deposition, or sequential supply for cyclical blanket deposition and selective etching. In either case, precursors and etchants are provided along separate flow paths that intersect in the relatively open reaction space, rather than in more confined upstream locations.

摘要翻译： 用于膜的选择性外延形成的方法和装置将反应性物质分别注入到CVD室中。 该方法对于使用前体和蚀刻剂的挥发性组合的选择性沉积特别有用。 形成过程包括同时供应用于选择性沉积的前体和蚀刻剂，或用于循环毯覆层沉积和选择性蚀刻的顺序供应。 在任一种情况下，前沿和蚀刻剂沿着在相对开放的反应空间中相交的单独的流动路径提供，而不是在更限制的上游位置。

公开(公告)号：US20090011937A1

公开(公告)日：2009-01-08

申请号：US12223289

申请日：2007-02-01

申请人： Herve R. Vantieghem ,  Matthias Bauer ,  Andreas Haase

发明人： Herve R. Vantieghem ,  Matthias Bauer ,  Andreas Haase

IPC分类号： A01N43/54 ,  A01N43/84 ,  A01P21/00

CPC分类号： A01N43/653 ,  A01N37/50 ,  A01N43/40 ,  A01N61/00 ,  C10L1/19 ,  C10L1/2222 ,  C10L1/224 ,  C10L1/23 ,  C10L1/232 ,  C10L1/233 ,  C10L1/2335 ,  C10L1/2412 ,  C10L1/2418 ,  C10L1/2425 ,  C10L1/2456 ,  C10L1/28 ,  C10L10/00 ,  C10L10/12 ,  C11B1/06 ,  C11C3/003 ,  A01N2300/00

摘要： The present invention relates to the use of certain fungicides for increasing the quality and, if appropriate, the quantity of oil crop products. It also relates to the use of these fungicides for reducing the brittleness of the seed coats of seed oil crops. Furthermore, it relates to oil plant products which can be obtained from oil crops which have been treated with these fungicides, for example oils or seeds from oil crops which have been treated in this manner. Furthermore, it also relates to renewable fuels which comprise the oil according to the invention and/or reaction products thereof. Finally, it relates to a method of improving the combustion in engines and furnace installations, in which these are operated at least to some extent with a suitable oil crop product according to the invention.

摘要翻译： 本发明涉及某些杀真菌剂用于提高油料作物产品的质量和（如果合适的话）数量的用途。 它还涉及这些杀真菌剂用于降低种子油作物的种皮脆性的用途。 此外，它涉及可以从用这些杀真菌剂处理的油料作物获得的油料产品，例如已经以这种方式处理的油料作物的油或种子。 此外，它还涉及包含根据本发明的油和/或其反应产物的可再生燃料。 最后，本发明涉及一种改善发动机和炉子装置中的燃烧的方法，其中这些方法至少在一定程度上与根据本发明的合适的油料产品一起运行。

公开(公告)号：US20080017101A1

公开(公告)日：2008-01-24

申请号：US11867318

申请日：2007-10-04

申请人： Matthias Bauer ,  Paul Brabant ,  Trevan Landin

发明人： Matthias Bauer ,  Paul Brabant ,  Trevan Landin

IPC分类号： C30B23/06

CPC分类号： C30B25/186 ,  C30B25/10 ,  C30B25/183 ,  C30B29/08 ,  Y10S438/935

摘要： A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.

摘要翻译： 一种方法包括在反应室中，在第一温度下在含硅表面上沉积锗种子层。 种子层的厚度在约一个单层和约一个之间。 该方法还包括在沉积种子层之后，在继续沉积锗的同时增加反应室的温度。 该方法还包括将反应室保持在第二温度范围内，同时继续沉积锗。 第二温度范围大于第一温度。