Methods and apparatus for a gas panel with constant gas flow

    公开(公告)号:US08728239B2

    公开(公告)日:2014-05-20

    申请号:US13194799

    申请日:2011-07-29

    摘要: A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line. The gas panel is configured to substitute the mass flow rate of the deposition vent line with the mass flow rate of the deposition process lines, such that when the deposition vent line is directed to the reactor chamber the deposition process lines are directed to the vent line and when the deposition vent line is directed to the vent line the deposition process lines are directed to the reactor chamber. The substitution of the two mass flow rates maintains a constant mass flow rate of gases to the reactor chamber throughout the deposition process step.

    Methods and Apparatus for a Gas Panel with Constant Gas Flow
    3.
    发明申请
    Methods and Apparatus for a Gas Panel with Constant Gas Flow 有权
    具有恒定气体流量的气体面板的方法和装置

    公开(公告)号:US20130029496A1

    公开(公告)日:2013-01-31

    申请号:US13194799

    申请日:2011-07-29

    IPC分类号: H01L21/302 H01L21/3065

    摘要: A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line. The gas panel is configured to substitute the mass flow rate of the deposition vent line with the mass flow rate of the deposition process lines, such that when the deposition vent line is directed to the reactor chamber the deposition process lines are directed to the vent line and when the deposition vent line is directed to the vent line the deposition process lines are directed to the reactor chamber. The substitution of the two mass flow rates maintains a constant mass flow rate of gases to the reactor chamber throughout the deposition process step.

    摘要翻译: 根据本发明的各个方面的气体面板被配置为在沉积工艺步骤期间将恒定的气体流量传送到反应室。 在一个实施例中,气体面板包括具有沉积注入管线,沉积排放管线和至少一个沉积工艺气体管线的沉积子板。 沉积注入管线将载气的质量流量提供给反应室。 每个沉积工艺气体管线可以包括一对切换阀,其被配置为选择性地将沉积工艺气体引导到反应室或排气管线。 沉积排气管线还包括切换阀,其被配置为选择性地引导载气的第二质量流量,其等于所有沉积处理气体的质量流量与反应室或排气管线的总和。 气体面板被配置为以沉积处理线的质量流率代替沉积排气管线的质量流率,使得当沉积排气管线被引导到反应器室时,沉积工艺管线被引导到排放管线 并且当沉积排气管线被引导到排气管线时,沉积工艺管线被引导到反应器室。 在整个沉积工艺步骤中,两个质量流速的取代保持了气体到反应器室的恒定质量流量。

    Systems and methods for mass flow controller verification
    5.
    发明授权
    Systems and methods for mass flow controller verification 有权
    质量流量控制器验证的系统和方法

    公开(公告)号:US09169975B2

    公开(公告)日:2015-10-27

    申请号:US13597043

    申请日:2012-08-28

    IPC分类号: G01F25/00 F17D1/00

    摘要: A method and system are disclosed for verifying the flow rate of gas through a mass flow controller, such as a mass flow controller used with a tool for semiconductor or solar cell fabrication. To verify the mass flow rate measured by the mass flow controller, gas passing through the mass flow controller is also passed through a mass flow meter. The measured flow rate through the mass flow controller is compared to the measured flow rate through the mass flow meter and any difference between the two measured flow rates is determined. Depending upon the magnitude of any difference, the flow of gas to the mass flow controller may be altered.

    摘要翻译: 公开了一种用于验证气体通过质量流量控制器的流量的方法和系统,例如与用于半导体或太阳能电池制造的工具一起使用的质量流量控制器。 为了验证由质量流量控制器测量的质量流量,通过质量流量控制器的气体也通过质量流量计。 将通过质量流量控制器的测量流量与通过质量流量计的测量流量进行比较,并确定两个测量流量之间的任何差异。 根据任何差异的大小,可以改变气体流向质量流量控制器的流量。