Abstract:
A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By using a backside exposure technique, the masking step for patterning an etch stopper layer can be omitted. After forming an active region including a gate electrode and a scan line on the front side of a substrate, and sequentially applying an etch stopper layer and a photoresist layer over the resulting structure, the backside exposure is performed by exposing from the back side of the substrate. A portion of photoresist is shielded by the active region from exposure so that an etch stopper structure having a shape similar to the shape of the active region is formed without any photo-masking and lithographic procedure. Therefore, the above self-aligned effect allows one masking step to be reduced so as to simplify the process.
Abstract:
A method for fabricating a capacitor electrode on a semiconductor substrate includes the steps of: forming a conducting layer over the semiconductor substrate; forming a photoresist layer over the conducting layer; pattering the photoresist layer through an interfering exposure step; and pattering the conducting layer using the patterned photoresist layer as a mask, thereby forming a capacitor electrode.
Abstract:
A method of fabricating a rugged capacitor structure of high density Dynamic Random Access Memory (DRAM) cells is disclosed. First, MOSFETs, wordlines and bitlines are formed on a semiconductor silicon substrate. Next, a dielectric layer and a doped polysilicon layer are sequentially deposited over the entire silicon substrate. The dielectric layer and doped polysilicon layer are then partially etched to open source contact windows. Then, a polysilicon layer is deposited overlaying the doped polysilicon layer and filling into the source contact windows. Next, the polysilicon layer and doped polysilicon layers are partially etched to define bottom electrodes of the capacitors. Next, tilt angle implantation is performed to implant impurities into top surface and four sidewalls of the polysilicon layer and doped polysilicon layer. Next, a rugged polysilicon layer is deposited overlaying the polysilicon, doped polysilicon and third dielectric layers. Next, the polysilicon layer is anisotropically etched by using the rugged polysilicon layer as an etching mask to transfer rugged surface profile from the rugged polysilicon layer to the polysilicon layer. Finally, an interelectrode dielectric layer and a third polysilicon layer as top electrodes of the capacitors are sequentially formed to complete the rugged capacitor for high density DRAM applications.
Abstract:
The electric circuit of a Liquid Crystal Display normally includes a common electrode comprising a material such as indium-tin-oxide that has high resistivity and hence high series resistance. Said series resistance is significantly reduced by the design taught in the present invention wherein an electrically conductive black matrix is located so as to be in contact with the common electrode. Additionally, said design reduces the level of light reflected back in the direction of viewing, thereby improving the contrast level of the display.
Abstract:
The present disclosure relates to a method for making a touch panel. The method includes following steps. A substrate is provided, wherein the substrate has a surface and defines two areas: a touch-view area and a trace area; applying an adhesive layer on the surface of the substrate. A carbon nanotube film is placed on a surface of the adhesive layer. The adhesive layer is solidified. An electrode and a conductive trace are formed on a surface of the carbon nanotube film so that part of the carbon nanotube film on the trace area is exposed from space between adjacent conductive lines of the conductive trace to form an exposed carbon nanotube film. The exposed carbon nanotube film is removed.
Abstract:
An electronic paper display device includes an electronic paper display panel, and a functional layer. The electronic paper display panel includes a display surface. The functional layer is located on the display surface and includes a carbon nanotube touching functional layer.
Abstract:
An electronic paper display device includes an electronic paper display panel, and a functional layer. The electronic paper display panel includes a common electrode layer and a display surface. The functional layer is located on the display surface and includes a carbon nanotube touching functional layer. A distance between the common electrode layer and the carbon nanotube touching functional layer is above 100 microns and equal to or less than 2 millimeters.
Abstract:
A method for making a patterned conductive element includes following steps. A substrate is provided. A patterned adhesive layer is applied on a surface of the substrate. A carbon nanotube layer is placed on a surface of the patterned adhesive layer. The patterned adhesive layer is solidified to obtain a fixed part of the carbon nanotube layer and a non-fixed part of carbon nanotube layer. The non-fixed part of carbon nanotube layer is removed.
Abstract:
A touch panel includes a first electrode plate and a second electrode plate connected to the first electrode plated. The first electrode plate includes a first substrate, and a first conductive layer disposed on the first substrate. The second electrode includes a second substrate, and a second conductive layer disposed on the second substrate. The first or the second conductive layer includes at least one carbon nanotube composite layer.
Abstract:
A liquid crystal display screen includes an upper board, a lower board opposite to the upper board, and a liquid crystal layer located between the upper board and the lower board. The upper board includes a touch panel. The touch panel includes an amount of transparent electrodes. At least one of the transparent electrodes includes a transparent carbon nanotube structure. The lower board includes a thin film transistor panel. The thin film transistor panel includes an amount of thin film transistors. Each of the thin film transistors includes a semiconducting layer. The semiconducting layer includes a semiconducting carbon nanotube structure.