公开(公告)号：US20130134876A1

公开(公告)日：2013-05-30

申请号：US13616641

申请日：2012-09-14

申请人： Anthony de la Llera ,  Michael C. Kellogg ,  Alexei Marakhtanov ,  Rajinder Dhindsa

发明人： Anthony de la Llera ,  Michael C. Kellogg ,  Alexei Marakhtanov ,  Rajinder Dhindsa

IPC分类号： H05H1/24 ,  H05K13/00

CPC分类号： H01J37/32082 ,  H01J37/32577

摘要： A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component.

摘要翻译： 一种具有至少一个等离子体处理室的等离子体处理系统，包括可移动接地部件，RF接触部件，其被配置为当RF源向RF接触部件提供RF能量时从RF源接收RF能量;以及接地部件 加上地面。 等离子体处理系统还包括可操作地耦合到可移动接地部件的致动器，用于将可移动接地部件设置在第一位置和第二位置。 第一位置表示可移动接地部件不与RF接触部件和接地部件中的至少一个接触的位置。 第二位置表示可移动接地部件与RF接触部件和接地部件接触的位置。

公开(公告)号：US20130127476A1

公开(公告)日：2013-05-23

申请号：US13301580

申请日：2011-11-21

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi

IPC分类号： G01R27/28

CPC分类号： H01J37/32532 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32706

摘要： A system and method of measuring a self bias DC voltage on a semiconductor wafer in a plasma chamber includes generating a plasma between a top electrode and a top surface of an electrostatic chuck in a plasma chamber including applying one or more RF signals to one or both of the top electrode and electrostatic chuck. The wafer is supported on the top surface of an electrostatic chuck. The self bias DC voltage is developed on the wafer. A vibrating electrode is oscillated to produce a variable capacitance, the vibrating electrode is located in the electrostatic chuck. An electrical current is developed in a sensor circuit. An output voltage is measured across a sampling resistor in the sensor circuit, a second DC potential is applied to the vibrating electrode to nullify the output voltage. The second DC potential is equal to the self bias DC voltage on the wafer.

摘要翻译： 测量等离子体室中的半导体晶片上的自偏压DC电压的系统和方法包括在等离子体室中的顶电极和静电卡盘的顶表面之间产生等离子体，包括将一个或多个RF信号施加到一个或两个 的顶部电极和静电吸盘。 晶片被支撑在静电卡盘的顶表面上。 在晶圆上开发出自偏压直流电压。 振动电极振荡以产生可变电容，振动电极位于静电卡盘中。 在传感器电路中产生电流。 在传感器电路中的采样电阻两端测量输出电压，向振动电极施加第二个直流电位，使输出电压无效。 第二直流电位等于晶片上的自偏压直流电压。

公开(公告)号：US20130126475A1

公开(公告)日：2013-05-23

申请号：US13301725

申请日：2011-11-21

申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H05H1/24 ,  C23F1/08

CPC分类号： H01J37/32091 ,  H01J37/32165

摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

摘要翻译： 提供了半导体制造方法，系统和计算机程序。 一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。 第一，第二和第三电源耦合到底部电极。 此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源 。

公开(公告)号：US20120000605A1

公开(公告)日：2012-01-05

申请号：US12828098

申请日：2010-06-30

申请人： Michael C. Kellogg ,  Alexei Marakhtanov ,  Rajinder Dhindsa

发明人： Michael C. Kellogg ,  Alexei Marakhtanov ,  Rajinder Dhindsa

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C14/34 ,  H01L21/306

CPC分类号： H05K5/0247 ,  C23C16/4585 ,  H01B5/04 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32733 ,  H01L21/68735

摘要： A consumable isolation ring of a movable substrate support assembly is described. The consumable isolation ring is configured to be supported on a step of a movable ground ring fit around a fixed ground ring. The consumable isolation ring is configured to electrically isolate the movable ground ring from a dielectric ring of the movable substrate support assembly.

摘要翻译： 描述可移动基板支撑组件的可消耗隔离环。 消耗性隔离环被配置为支撑在固定接地环周围的可动接地环的台阶上。 消耗性隔离环被构造成将可移动接地环与可移动衬底支撑组件的介质环电隔离。

公开(公告)号：US07837827B2

公开(公告)日：2010-11-23

申请号：US11770658

申请日：2007-06-28

申请人： Rajinder Dhindsa ,  Alexei Marakhtanov

发明人： Rajinder Dhindsa ,  Alexei Marakhtanov

IPC分类号： H01L21/3065

CPC分类号： H01L21/6732 ,  H01J37/32091 ,  H01J37/32623 ,  H01J37/32642 ,  Y10S156/915

摘要： A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing.

摘要翻译： 提供了一种在等离子体处理室中处理衬底的方法。 衬底设置在卡盘上方并被第一边缘环包围。 第一边缘环与卡盘电隔离。 该方法包括提供第二边缘环。 第二边缘环设置在基板的边缘下方。 该方法还包括提供耦合环。 联接环被配置为便于从ESC（静电卡盘）组件到第一边缘环的RF耦合，从而使得第一边缘环在衬底处理期间具有边缘环电位，并且使RF耦合在第一边缘处被最大化 在基板处理期间在第二边缘环处环形并最小化。

公开(公告)号：US20080160776A1

公开(公告)日：2008-07-03

申请号：US11618583

申请日：2006-12-29

申请人： Rajinder Dhindsa ,  Hudson Eric ,  Alexei Marakhtanov

发明人： Rajinder Dhindsa ,  Hudson Eric ,  Alexei Marakhtanov

IPC分类号： H01L21/461

CPC分类号： H01J37/32165 ,  H01J37/32091

摘要： A method and apparatus for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.

摘要翻译： 一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法和装置。 在等离子体处理期间，衬底设置在下电极上。 该方法包括向下电极提供至少具有第一RF频率的第一RF信号。 第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。 该方法还包括向上电极提供第二RF信号。 第二RF信号也具有第一RF频率。 第二RF信号的相位偏离第一RF信号的相位小于10％的值。 该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

公开(公告)号：US09287096B2

公开(公告)日：2016-03-15

申请号：US12237179

申请日：2008-09-24

申请人： Alexei Marakhtanov ,  Eric Hudson ,  Rajinder Dhindsa ,  Neil Benjamin

发明人： Alexei Marakhtanov ,  Eric Hudson ,  Rajinder Dhindsa ,  Neil Benjamin

IPC分类号： H01J37/32

CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32532 ,  H01J37/3266 ,  H01J37/32669 ,  H01J2237/332 ,  H01J2237/334

摘要： A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.

摘要翻译： 提供具有用于处理衬底的等离子体处理室的电容耦合等离子体（CCP）处理系统。 电容耦合等离子体（CCP）处理系统包括用于处理衬底的上电极和下电极，其在等离子体处理期间设置在下电极上。 电容耦合等离子体（CCP）处理系统还包括电感线圈布置阵列，其被配置为在上电极和下电极之间的间隙中感应维持等离子体。

公开(公告)号：US09184074B2

公开(公告)日：2015-11-10

申请号：US12951886

申请日：2010-11-22

申请人： Rajinder Dhindsa ,  Alexei Marakhtanov

发明人： Rajinder Dhindsa ,  Alexei Marakhtanov

IPC分类号： C03C15/00 ,  H01L21/3065 ,  H01L21/673 ,  H01J37/32

CPC分类号： H01L21/6732 ,  H01J37/32091 ,  H01J37/32623 ,  H01J37/32642 ,  Y10S156/915

摘要： A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing. The method also includes providing an insulator ring, wherein the second edge ring is disposed above the insulator ring.

摘要翻译： 提供了一种在等离子体处理室中处理衬底的方法。 衬底设置在卡盘上方并被第一边缘环包围。 第一边缘环与卡盘电隔离。 该方法包括提供第二边缘环。 第二边缘环设置在基板的边缘下方。 该方法还包括提供耦合环。 联接环被配置为便于从ESC（静电卡盘）组件到第一边缘环的RF耦合，从而使得第一边缘环在衬底处理期间具有边缘环电位，并且使RF耦合在第一边缘处被最大化 在基板处理期间在第二边缘环处环形并最小化。 该方法还包括提供绝缘体环，其中第二边缘环设置在绝缘体环上方。

公开(公告)号：US08894804B2

公开(公告)日：2014-11-25

申请号：US12747491

申请日：2008-12-12

申请人： Jean-Paul Booth ,  Alexei Marakhtanov ,  Rajinder Dhindsa ,  Luc Albarede ,  Seyed Jafar Jafarian-Tehrani

发明人： Jean-Paul Booth ,  Alexei Marakhtanov ,  Rajinder Dhindsa ,  Luc Albarede ,  Seyed Jafar Jafarian-Tehrani

IPC分类号： C23F1/00 ,  H01J37/32

CPC分类号： H01J37/32935

摘要： An arrangement within a plasma reactor for detecting a plasma unconfinement event is provided. The arrangement includes a sensor, which is a capacitive-based sensor implemented within the plasma reactor. The sensor is implemented outside of a plasma confinement region and is configured to produce a transient current when the sensor is exposed to plasma associated with the plasma unconfinement event. The sensor has at least one electrically insulative layer oriented toward the plasma associated with the plasma unconfined event. The arrangement also includes a detection circuit, which is electrically connected to the sensor for converting the transient current into a transient voltage signal and for processing the transient voltage signal to ascertain whether the plasma unconfinement event exists.

摘要翻译： 提供了用于检测等离子体无约束事件的等离子体反应器内的布置。 该装置包括传感器，其是在等离子体反应器内实现的基于电容的传感器。 传感器在等离子体限制区域外部实现，并且被配置为当传感器暴露于与等离子体无约束事件相关联的等离子体时产生瞬态电流。 传感器具有至少一个朝向与等离子体无约束事件相关联的等离子体的电绝缘层。 该装置还包括检测电路，其与传感器电连接，用于将瞬态电流转换成瞬态电压信号，并用于处理瞬态电压信号以确定是否存在等离子体无约束事件。

公开(公告)号：US20130327481A1

公开(公告)日：2013-12-12

申请号：US13494456

申请日：2012-06-12

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa

IPC分类号： G01R19/00

CPC分类号： H01J37/32935 ,  G01R19/0061 ,  G01R29/0878 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3299

摘要： Apparatus and methods for assessing RF return current azimuthal uniformity are disclosed. A plurality of non-linear substantially-enclosed RF current sensors are disposed azimuthally around a central axis of a plasma processing chamber. When a plasma is ignited in the plasma processing chamber, the RF return currents are sensed in the plurality of non-linear substantially-enclosed RF current sensors and analyzed to ascertain whether RF return current azimuthal uniformity is acceptable.

摘要翻译： 公开了用于评估RF返回电流方位均匀性的装置和方法。 多个非线性的基本上封闭的RF电流传感器围绕等离子体处理室的中心轴方位设置。 当在等离子体处理室中点燃等离子体时，在多个非线性的基本封闭的RF电流传感器中检测RF返回电流，并进行分析，以确定RF返回电流方位均匀性是否可接受。