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    Method for adjusting and stabilizing the frequency of an acoustic resonator
    41.
    发明授权
    Method for adjusting and stabilizing the frequency of an acoustic resonator 有权
    用于调节和稳定声谐振器频率的方法

    公开(公告)号：US06710508B2

    公开(公告)日：2004-03-23

    申请号：US09996951

    申请日：2001-11-27

    Applicant: Richard C. Ruby ,  Joe Qingzhe Wen

    Inventor： Richard C. Ruby ,  Joe Qingzhe Wen

    IPC: H01L4108

    CPC classification number: H03H3/04

    Abstract: In an array of acoustic resonators, the resonant frequencies of the resonators are adjusted and stabilized in order to achieve target frequency responses for the array. The method of adjusting is achieved by intentionally inducing oxidation at an elevated temperature. Thermal oxidation grows a molybdenum oxide layer on the surface of the top electrode of an electrode-piezoelectric stack, thereby increasing the relative thickness of the electrode layer to the piezoelectric layer. In one embodiment, the resonant frequency of an FBAR is adjusted downwardly as the top electrode layer increases relative to the piezoelectric layer. In another embodiment, the method of stabilizing is achieved by intentionally inducing oxidation at an elevated temperature.

    Abstract translation: 在声谐振器阵列中，谐振器的谐振频率被调整和稳定，以便实现阵列的目标频率响应。 调节方法是通过在升高的温度下有意识地引起氧化来实现的。 热氧化在电极 - 压电堆叠的顶部电极的表面上生长氧化钼层，从而增加电极层与压电层的相对厚度。 在一个实施例中，当顶部电极层相对于压电层增加时，FBAR的谐振频率向下调节。 在另一个实施方案中，稳定方法是通过在升高的温度下有意地诱导氧化来实现的。

    Controlled effective coupling coefficients for film bulk acoustic resonators
    42.
    发明授权
    Controlled effective coupling coefficients for film bulk acoustic resonators 有权
    薄膜体声共振器的受控有效耦合系数

    公开(公告)号：US06472954B1

    公开(公告)日：2002-10-29

    申请号：US09841234

    申请日：2001-04-23

    Applicant: Richard C. Ruby ,  Paul Bradley ,  Domingo Figueredo ,  John D. Larson, III ,  Yury Oshmyansky

    Inventor： Richard C. Ruby ,  Paul Bradley ,  Domingo Figueredo ,  John D. Larson, III ,  Yury Oshmyansky

    IPC: H03H9205

    CPC classification number: H03H9/706 ,  H03H3/04 ,  H03H9/0571 ,  H03H9/587 ,  H03H2003/0471 ,  Y10T29/42

    Abstract: In an array of acoustic resonators, the effective coupling coefficient of first and second filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. In one embodiment, the tailoring of the coefficients is achieved by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers. For example, the total thickness of the electrode layers of the transmit filter may be in the range of 1.2 to 2.8 times the total thickness of the electrode layers of the receive filter. In another embodiment, the coefficient tailoring is achieved by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded. Preferably, the capacitor is formed of the same materials used to fabricate a film bulk acoustic resonator (FBAR). The capacitor may be mass loaded to change its frequency by depositing a metal layer on the capacitor. Alternatively, the mass loading may be provided by forming the capacitor directly on a substrate.

    Abstract translation: 在声谐振器阵列中，分别对第一和第二滤波器的有效耦合系数进行定制，以实现期望的频率响应。 在双工器实施例中，发射带通滤波器的有效耦合系数低于同一双工器的接收带通滤波器的有效耦合系数。 在一个实施例中，通过改变压电层的厚度与电极层的总厚度之比来实现系数的调整。 例如，发射滤波器的电极层的总厚度可以在接收滤波器的电极层的总厚度的1.2至2.8倍的范围内。 在另一个实施例中，通过与滤波器内的声谐振器并联形成电容器来实现系数调整，有效耦合系数将被降低。 优选地，电容器由用于制造膜体声波谐振器（FBAR）的相同材料形成。 可以通过在电容器上沉积金属层来对电容器进行质量负载以改变其频率。 或者，可以通过将电容器直接形成在基板上来提供质量负载。

    Bulk acoustic wave resonator with improved lateral mode suppression
    43.
    发明授权
    Bulk acoustic wave resonator with improved lateral mode suppression 有权
    具有改进的横向模式抑制的体声波谐振器

    公开(公告)号：US06215375B1

    公开(公告)日：2001-04-10

    申请号：US09282082

    申请日：1999-03-30

    Applicant: John D. Larson, III ,  Richard C. Ruby ,  Paul Bradley

    Inventor： John D. Larson, III ,  Richard C. Ruby ,  Paul Bradley

    IPC: H03H917

    CPC classification number: H03H9/174 ,  H03H9/132 ,  H03H9/585

    Abstract: A bulk acoustic wave device that provides a high spectral purity, high Q, resonator in the radio frequency and microwave frequency ranges. Such resonators may be coupled together to form filters or other frequency selective devices. The bulk acoustical wave filter is constructed from a piezoelectric (PZ) material having a first surface and a second surface and first and second electrodes. The first electrode includes an electrically conducting layer on the first surface, and the second electrode includes an electrically conducting layer on the second surface. The first electrode overlies at least a portion of the second electrode, the portion of the first electrode that overlies the second electrode has a periphery which is a non-rectangular, irregular polygon. In the preferred embodiment of the present invention, the periphery is a three-sided, four-sided, or n-sided irregular polygon in which no two sides are parallel to one another.

    Abstract translation: 一种在射频和微波频率范围内提供高光谱纯度，高Q谐振器的体声波器件。 这样的谐振器可以耦合在一起以形成滤波器或其它频率选择装置。 本体声波滤波器由具有第一表面和第二表面以及第一和第二电极的压电（PZ）材料构成。 第一电极在第一表面上包括导电层，第二电极在第二表面上包括导电层。 第一电极覆盖第二电极的至少一部分，第一电极的覆盖第二电极的部分具有非矩形的不规则多边形的周边。 在本发明的优选实施例中，周边是没有两个侧面彼此平行的三面，四面或者n面的不规则多边形。

    Method of making tunable thin film acoustic resonators
    44.
    发明授权
    Method of making tunable thin film acoustic resonators 失效
    制造可调谐薄膜声谐振器的方法

    公开(公告)号：US5873153A

    公开(公告)日：1999-02-23

    申请号：US703716

    申请日：1996-08-27

    Applicant: Richard C. Ruby ,  Paul Philip Merchant

    Inventor： Richard C. Ruby ,  Paul Philip Merchant

    IPC: H03H3/04 ,  H03H9/02 ,  H03H9/17 ,  H03H9/58 ,  H01L41/22

    CPC classification number: H03H9/174 ,  H03H3/04 ,  H03H9/02133 ,  H03H9/02236 ,  H03H9/583 ,  H03H9/588 ,  H03H2009/02181 ,  Y10T29/42

    Abstract: An acoustical resonator comprising top and bottom electrodes that sandwich a PZ layer. The resonance frequency of the acoustical resonator may be adjusted after fabrication by utilizing heating elements included in the acoustical resonator and/or by adjusting the thickness of a tuning layer. In the preferred embodiment of the present invention, the electrodes comprise Mo layers. One embodiment of the present invention is constructed on a Si.sub.3 N.sub.4 membrane. A second embodiment of the present invention is constructed such that it is suspended over a substrate on metallic columns. In the preferred embodiment of the present invention, the electrodes are deposited by a method that minimizes the stress in the electrodes.

    Abstract translation: 包括夹着PZ层的顶部和底部电极的声学谐振器。 可以通过利用声谐振器中包含的加热元件和/或通过调节调谐层的厚度来调整声学谐振器的共振频率。 在本发明的优选实施例中，电极包括Mo层。 本发明的一个实施方案构造在Si 3 N 4膜上。 本发明的第二实施例构造成使得其悬挂在金属柱上的基板上。 在本发明的优选实施例中，通过使电极中的应力最小化的方法来沉积电极。

    Silver additives for ceramic superconductors
    46.
    发明授权
    Silver additives for ceramic superconductors 失效
    陶瓷超导体的银添加剂

    公开(公告)号：US5338507A

    公开(公告)日：1994-08-16

    申请号：US751463

    申请日：1991-08-29

    Applicant: John T. Anderson ,  V. K. Nagesh ,  Richard C. Ruby

    Inventor： John T. Anderson ,  V. K. Nagesh ,  Richard C. Ruby

    IPC: C01G3/00 ,  C04B35/45 ,  H01L39/24 ,  B22F3/10 ,  B22F3/16

    CPC classification number: C01G3/006 ,  C04B35/45 ,  H01L39/2419 ,  H01L39/2429 ,  C01P2004/61 ,  C01P2004/80

    Abstract: A method for making metal/ceramic superconductor thick film structures including the steps of preparing a silver/superconductor ink, applying the ink to a substrate, evaporating the ink's binder, decomposing a silver compound in the residue to coat the superconductor grains, sintering the coated superconductor grains, and oxygenating the superconductor grains through the silver coating. The resultant inter-granular silver increases the critical current and mechanical strength of the superconductor.

    Abstract translation: 一种制造金属/陶瓷超导体厚膜结构的方法，包括以下步骤：制备银/超导体油墨，将油墨施加到基材上，蒸发油墨粘合剂，分解残留物中的银化合物以涂覆超导体颗粒，烧结涂覆 超导体晶粒，并通过银涂层对超导体晶粒进行氧化。 所产生的颗粒间银增加了超导体的临界电流和机械强度。

    Superconducting power distribution structure for integrated circuits
    47.
    发明授权
    Superconducting power distribution structure for integrated circuits 失效
    集成电路超导配电结构

    公开(公告)号：US5061686A

    公开(公告)日：1991-10-29

    申请号：US352221

    申请日：1989-05-15

    Applicant: Richard C. Ruby

    Inventor： Richard C. Ruby

    IPC: H01G4/008 ,  H01G4/228 ,  H01L21/02 ,  H01L23/44

    CPC classification number: H01G4/008 ,  H01G4/228 ,  H01L23/445 ,  H01L28/55 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/3011

    Abstract: A superconducting power distribution structure for integrated circuits characterized by a support member and a relatively thin superconducting capacitor member. Vias extending through the support member and the capacitor member couple power and ground plates of the capacitor member to power and ground traces on the circuit board. The vias are solder-bump connected to an integrated circuit chip, and the entire chip is cryogenically cooled to cause the plates of the capacitor to superconduct. The superconducting capacitor provides a large reservoir of charge to the integrated circuit chip through minimal inductance and with minimal voltage drop across its power plane.

    Abstract translation: 一种用于集成电路的超导配电结构，其特征在于支撑构件和相对薄的超导电容器构件。 延伸穿过支撑构件和电容器构件的通孔将电容器构件的电源和接地板耦合到电路板上的电源和接地迹线。 通孔焊接凸点连接到集成电路芯片，并且整个芯片被低温冷却以使电容器的板超导。 超导电容器通过最小的电感并且在其电源平面上具有最小的电压降，为集成电路芯片提供了大量的电荷储存器。

    Manufacturing process for thin film bulk acoustic resonator (FBAR) filters
    49.
    发明授权
    Manufacturing process for thin film bulk acoustic resonator (FBAR) filters 有权
    薄膜体声波谐振器（FBAR）滤波器的制造工艺

    公开(公告)号：US07802349B2

    公开(公告)日：2010-09-28

    申请号：US11748970

    申请日：2007-05-15

    Applicant: Richard C. Ruby ,  John D. Larson ,  Paul D. Bradley

    Inventor： Richard C. Ruby ,  John D. Larson ,  Paul D. Bradley

    IPC: H01L41/22 ,  H01L41/00

    CPC classification number: H03H3/04 ,  H03H3/02 ,  H03H9/02149 ,  H03H2003/0471 ,  Y10T29/42 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49156

    Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

    Abstract translation: 在具有顶面的基板上制造声学谐振器的方法。 首先，产生上表面的凹陷。 接下来，凹陷填充有牺牲材料。 填充的凹陷具有与所述基底的所述顶表面相对的上表面水平。 接下来，在所述上表面上沉积第一电极。 然后，在所述第一电极上沉积一层压电材料。 使用质量负载剥离工艺将第二电极沉积在压电材料层上。

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