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公开(公告)号：US5159604A
公开(公告)日：1992-10-27
申请号：US737463
申请日：1991-07-29
IPC分类号： H01S5/40
CPC分类号： H01S5/4031
摘要： In a semiconductor laser array structure in which antiguided regions between high effective refractive index waveguide regions experience greater gain then the waveguide regions, structures introduced at the sides of the array, next to the edgemost waveguides and not on the array period, reflect laterally transmitted radiation back toward the center of the array. The edge reflecting structures may be waveguide regions having widths of (m'+1/2) half-wavelengths, where "m'" is zero or a positive integer, compared to array waveguides with width m, where "m" is an integer not necessarily equal to "m'". The edge reflecting structures may also be stacks of such waveguides, where the regions between the edge waveguides are of a width substantially equal to (n'+1/2) half-wavelengths, compared to antiguide element widths of n half-wavelengths. The two integers n and n' may be, but are not necessarily, equal. Alternatively, the edge reflectors can be mirrors fabricated at the side edges of the array or by disordering the active region beyond the edgemost waveguides to form a refractive index step. The mirrors should be positioned a distance substantially a/2 from the edgemost emitters, where "a" is the array period.
摘要翻译： 在半导体激光器阵列结构中，其中高有效折射率波导区域之间的防护区域具有更大的增益，然后波导区域，引导在阵列侧面的结构，在边缘波导旁边，而不是阵列周期，反射横向透射辐射 回到阵列的中心。 与具有宽度m的阵列波导相比，边缘反射结构可以是宽度为（m'+ 1/2）半波长的波导区域，其中“m”为零或正整数，其中“m”为整数 不一定等于“m”。 边缘反射结构也可以是这样的波导的堆叠，其中边缘波导之间的区域的宽度基本上等于（n'+ 1/2）个半波长，与n个半波长的防卫元件宽度相比。 两个整数n和n'可以是但并不一定相等。 或者，边缘反射器可以是在阵列的侧边缘处制造的反射镜，或者通过使有源区域超出边缘波导的方式来形成折射率步骤。 镜子应该与edgemost发射器的距离基本上为1/2，其中“a”是阵列周期。
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公开(公告)号：US5103456A
公开(公告)日：1992-04-07
申请号：US559648
申请日：1990-07-30
CPC分类号： H01S5/026 , H01S5/4031 , H01S5/50
摘要： An integrated master oscillator/power amplifier semiconduction device having a laser diode oscillator, a broad area light amplifier and a coupling grating disposed to deflect light at an angle from the laser oscillator to the light amplifier. The amplifier may terminate as an output facet or use a grating surface emitter to couple amplified light out of the device. The orientation angle and grating period of the coupling grating are chosen to minimize feedback from the amplifier into the laser. This is achieved either by deflecting the light by other than a 90.degree. angle or by orienting the grating at other than 45.degree. with respect to laser even though light is deflected by 90.degree. so that any return light effectively "sees" a different grating. The laser can be a DFB or DBR laser and can be wavelength tunable.
摘要翻译： 一种具有激光二极管振荡器，广域光放大器和耦合光栅的集成主振荡器/功率放大器半导体器件，其设置成将光从激光振荡器偏转到光放大器。 放大器可以终止为输出小面或使用光栅表面发射器将放大的光耦合到设备外。 选择耦合光栅的取向角和光栅周期以最小化从放大器到激光器的反馈。 这可以通过将光偏转90°以外，或通过将光栅相对于激光定向45°以外的方式实现，即使光被偏转90°，使得任何返回光有效地“看到”不同的光栅。 激光器可以是DFB或DBR激光器，可以是波长可调谐的。
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公开(公告)号：US5048036A
公开(公告)日：1991-09-10
申请号：US638358
申请日：1991-01-04
CPC分类号： B82Y20/00 , H01S5/32308 , H01S5/34313 , H01S5/0021 , H01S5/305 , H01S5/3201 , H01S5/3403 , H01S5/343 , H01S5/34306 , H01S5/3432
摘要： Semiconductor heterostructure lasers having at least one lattice mismatched strain layer in the cladding proximate to the active region. Indium or phosphorus may be added in high concentration to form the strain layers. The strain layers may be spaced somewhat apart from the active region or may be adjacent to the active region. In either case, the strain layers decrease transparency current and increase differential gain.
摘要翻译： 半导体异质结构激光器在接近有源区域的包层中具有至少一个晶格失配的应变层。 可以以高浓度加入铟或磷以形成应变层。 应变层可以与有源区域稍微间隔开，或者可以与有源区域相邻。 在任一情况下，应变层降低透明度电流并增加微分增益。
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公开(公告)号：US5033054A
公开(公告)日：1991-07-16
申请号：US568942
申请日：1990-08-17
CPC分类号： H01S5/42 , H01S3/10076 , H01S5/148
摘要： A laser having a phase conjugating reflector positioned with a resonant cavity of a laser configuration capable of multimode operation. The resonant cavity or other means associated with the laser configuration selects the preferred mode at threshold. The phase conjugating material builds up reflectivity as the light intensity is increased above threshold power levels to maintain the selected mode to high power levels. One embodiment has an external Talbot cavity with a first mirror in a Talbot plane of a multi-emitter laser array and with the phase conjugating material at a sub-Talbot plane. Another embodiment has an external GRIN lens cavity with a far field apertured stripe mirror for threshold mode selection. The phase conjugator is placed at a high light intensity position within the cavity such as adjacent to the stripe mirror or adjacent to the laser array. The laser source may be a linear laser diode array or a 2-D surface emitting laser array. An additionl embodiment uses a diode-array-pumped solid state laser medium together with a phase conjugator between the cavity mirrors.
摘要翻译： 一种具有相位共轭反射器的激光器，其具有能够进行多模操作的激光器配置的谐振腔。 与激光配置相关联的谐振腔或其它装置在阈值处选择优选模式。 当光强度增加到阈值功率水平以上以使所选择的模式保持在高功率水平时，相位共轭材料建立反射率。 一个实施例具有外部Talbot腔，其具有在多发射体激光器阵列的Talbot平面中的第一反射镜，并且相位共轭材料在次Talbot平面处。 另一个实施例具有用于阈值模式选择的具有远场有孔条形反射镜的外部GRIN透镜腔。 相位共轭器被放置在空腔内的高光强位置，例如邻近条形反射镜或与激光阵列相邻。 激光源可以是线性激光二极管阵列或2-D表面发射激光器阵列。 添加实施例使用二极管阵列泵浦固态激光介质以及腔镜之间的相位共轭器。
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公开(公告)号：US06407855B1
公开(公告)日：2002-06-18
申请号：US09430394
申请日：1999-10-29
申请人： Stuart MacCormack , David M. Giltner , Vincent G. Dominic , Donald R. Scifres , Bardia Pezeshki , Edward C. Vail , Mehrdad Ziari , Robert G. Waarts
发明人： Stuart MacCormack , David M. Giltner , Vincent G. Dominic , Donald R. Scifres , Bardia Pezeshki , Edward C. Vail , Mehrdad Ziari , Robert G. Waarts
IPC分类号： H01S330
CPC分类号： H01S3/094 , H01S3/0675 , H01S3/08086 , H01S3/0812 , H01S3/094042 , H01S3/302
摘要： Optical pumping arrangements are provided for the broadband or multiple wavelength pumping of optical sources. Sources may be based on Raman gain media and may use multiple output couplers to couple out different wavelength ranges. Cascaded Raman resonator (CRR) configurations may also be used. Overlapping resonators at different wavelengths may be configured to share gain media, and may have separate portions in separate optical paths. Attenuation filters may also be used that are matched to the gain profile of a gain medium, to flatten the gain spectrum and allow equalization of gain to different output wavelengths. In one embodiment, polarization maintaining fiber is used to develop resonant conditions at different wavelengths in different polarization states. Wideband output gratings may be substituted for narrowband gratings to provide CRR configurations with a broader output band. Broadband amplification may also be provided by using a laser source operating in coherence collapse. The multiple wavelength pumping lends itself to a pumping arrangement in which sources at different wavelengths are combined into separate transmission/gain media such as the different fibers of an optical fiber cable.
摘要翻译： 提供了用于光源的宽波长或多波长泵浦的光泵浦装置。 源可以基于拉曼增益介质，并且可以使用多个输出耦合器耦合出不同的波长范围。 也可以使用级联拉曼谐振器（CRR）。 可以将不同波长的重叠谐振器配置成共享增益介质，并且可以在单独的光路中具有分离的部分。 还可以使用与增益介质的增益曲线匹配的衰减滤波器，以平坦化增益谱，并允许将增益均衡到不同的输出波长。 在一个实施例中，使用偏振保持光纤来发展不同偏振态的不同波长的谐振条件。 宽带输出光栅可以代替窄带光栅，以提供具有更宽输出频带的CRR配置。 也可以通过使用在相干塌陷中操作的激光源来提供宽带放大。 多波长泵浦本身适用于泵送装置，其中将不同波长的源组合成单独的传输/增益介质，例如光纤电缆的不同光纤。
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公开(公告)号：US6025942A
公开(公告)日：2000-02-15
申请号：US827093
申请日：1997-03-27
申请人： Donald R. Scifres
发明人： Donald R. Scifres
CPC分类号： H04B10/1149 , H04W84/12
摘要： An infrared laser diode wireless local area network for communication between spatially dispersed terminals such as computers which may be located in a single room or in adjacent rooms. The lasers may be tuned to emit at varying frequencies for wavelength multiplexing, or a plurality of lasers each having a different output frequency can be connected with each terminal. A receiver connected to each terminal may similarly detect only a single narrow waveband or may detect a plurality of such wavebands. A transceiver may be employed for signal transmission between separate rooms. High speed data modulation of the carrier waves is provided with MOPA or similar lasers, and broad angular dispersion of the output is achieved by such lasers along with dispersive lenses.
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公开(公告)号：US5713654A
公开(公告)日：1998-02-03
申请号：US313757
申请日：1994-09-28
申请人： Donald R. Scifres
发明人： Donald R. Scifres
CPC分类号： G02B6/0001 , B60Q1/0011 , Y10S362/80
摘要： A vehicle lighting system using individually addressable laser diodes or laser arrays coupled to a fiber optic waveguide. A plurality of laser light sources are grouped together and conveniently located on the vehicle. Each laser light source is individually addressable and produces a beam that is coupled to a fiber optic waveguide. The waveguide distally transmits the beam to various optical loads on the vehicle. Alternatively, each fiber optic waveguide may be coupled to receive a beam from more than one laser light source. This allows switching to an operational light source should one fail. In this manner, the operational life of the system is increased.
摘要翻译： 使用单独可寻址的激光二极管或耦合到光纤波导的激光器阵列的车辆照明系统。 多个激光光源分组在一起并且方便地位于车辆上。 每个激光光源可单独寻址并产生耦合到光纤波导的光束。 波导将光束向远端传输到车辆上的各种光负载。 或者，每个光纤波导可以被耦合以从多于一个的激光光源接收光束。 如果一个失败，这可以切换到操作光源。 以这种方式，系统的使用寿命增加。
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公开(公告)号：US4862802A
公开(公告)日：1989-09-05
申请号：US217551
申请日：1988-07-11
IPC分类号： F42B3/113
CPC分类号： F42B3/113
摘要： A pyrotechnic ignition method in which a semiconductor laser bar or bars containing a number of independent laser array sources deliver optical power in a specified sequence through optical fibers to a set of pyrotechnic elements in order to initiate a sequence of pyrotechnic events, such as a fireworks display, building demolition, emergency ejection sequence, satellite launch, etc. A command signal is transmitted and received, typically by a remote station from the user. The signal is decoded to generate a set of electrical signals representing addresses of individual laser arrays on the laser bar. The laser arrays are activated in the desired sequence in response to the set of electrical signals and emit laser light. This light is transmitted along optical fibers coupled to the individual laser arrays and terminating in pyrotechnic elements. The pyrotechnic elements are ignited in response to optical power received from the optical fibers, typically by direct heating of a detonator. The detonator may also be ignited photochemically or by electric current produced by a photoelectric sensor in response to sensing of the laser light.
摘要翻译： 一种烟火点火方法，其中包含多个独立的激光阵列源的半导体激光棒或条以规定的顺序通过光纤将光功率提供给一组烟火元件，以便启动烟火事件序列，例如烟火 显示，建筑拆除，紧急排放顺序，卫星发射等。通常由用户的远程站发送和接收命令信号。 信号被解码以产生一组电信号，其表示激光条上各个激光阵列的地址。 响应于该组电信号而激光阵列以期望的顺序被激活并发射激光。 该光沿着耦合到各个激光器阵列的光纤传输并且终止于烟火元件。 烟火元件响应于通过直接加热雷管而从光纤接收的光功率点燃。 响应于对激光的感测，雷管也可以光化学地或由光电传感器产生的电流点燃。
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公开(公告)号：US4718069A
公开(公告)日：1988-01-05
申请号：US924195
申请日：1986-10-27
CPC分类号： H01S5/16 , H01S5/4068
摘要： A semiconductor laser array having a single lobe far field intensity pattern radiating normal to the laser's light emitting facet. The laser array has a plurality of semiconductor layers disposed over a substrate, at least one of the layers forming an active region for lightwave generation and propagation under lasing conditions. A plurality of adjacent spaced apart optical waveguides defined by waveguides and interconnecting waveguides directly couples lightwaves propagating in each waveguide into an adjacent waveguide. The waveguides are characterized by separations which are not equal at the light emitting facet but are selectively varied so that the sampling function has only a single central lobe. In the preferred embodiment, separations are greatest for edge located and smallest for centrally located waveguides. Interconnecting waveguides connect adjacent waveguides at respective Y-shaped junctions, the junctions being symmetric at least on the output side of the laser.
摘要翻译： 一种半导体激光器阵列，其具有垂直于激光器的发光小面辐射的单波瓣远场强度图案。 激光器阵列具有设置在衬底上的多个半导体层，所述层中的至少一个在激光条件下形成用于光波生成和传播的有源区域。 由波导和互连波导限定的多个相邻间隔开的光波导直接将在每个波导中传播的光波耦合到相邻波导中。 波导的特征在于在发光小面处不相等但是选择性地变化的分离，使得采样函数仅具有单个中心波瓣。 在优选实施例中，对于位于中心的波导的边缘定位和最小的间隔最大。 互连波导在相应的Y形结处连接相邻的波导，该结至少在激光器的输出侧是对称的。
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公开(公告)号：US4675709A
公开(公告)日：1987-06-23
申请号：US820600
申请日：1986-01-21
IPC分类号： H01L29/15 , H01L33/06 , H01S5/34 , H01L29/14 , H01L29/205 , H01L29/207 , H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01S5/34 , Y10S148/023 , Y10S148/04 , Y10S148/072 , Y10S148/119 , Y10S148/16
摘要： A semiconductor quantized layered structure comprising first and second different semiconductor materials comprising compound semiconductors from both the Group III and Group V elements and forming a plurality of alternate layers, each interfaced to its adjacent layer in a semiconductor homojunction or heterojunction. The bottom of the conduction bands of the first and second materials are at different energy levels and the tops of the valence bands of the first and second materials are at different energy levels. The bottoms of the conduction bands of the first and second materials form a plurality of serially arranged potential wells and barriers due to differences in the band structures of the different materials forming alternate layers and the interfacing of the layers forming heterojunctions so that the thinness of the layers will spatially localize electrons to obtain quantized electron states in one dimension transverse to the longitudinal extent of said layers. The invention is characterized in that the first material is an indirect bandgap material and optimized luminescence efficiency of the first material is achieved by adjusting the thickness of the layers comprising the first material to be less than the mean free path of an electron in the first material in the absence of the second material. Three dimensional quantized electron states may be provided in certain layers of the quantized layered structure with the incorporation of an impurity, such as, a donor or acceptor impurity or an isoelectronic impurity forming isoelectronic centers (IEC) in the indirect bandgap semiconductor material. Such an incorporation may be in each layer of the first and second materials or only in the alternate layers of the lower indirect bandgap material. Alternatively, the impurity may be in a predetermined periodic alternate of layers of the same indirect bandgap material, e.g., in one layer out of three, in alternate layers of a plurality of layers or in every n.sup.th layer or every n.sup.th group of layers where n may be any integer.
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