公开(公告)号：US20050252763A1

公开(公告)日：2005-11-17

申请号：US11183463

申请日：2005-07-18

Applicant: Roman Chistyakov

Inventor： Roman Chistyakov

IPC: C23C14/32 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/354 ,  C23C14/228 ,  C23C14/3414 ,  C23C14/3485 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/542 ,  H01J37/3266 ,  H01J37/32697 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3429 ,  H01J37/3455 ,  H01J37/3467 ,  H01J37/3476 ,  H01L21/02266

Abstract: Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target.

公开(公告)号：US20050178654A1

公开(公告)日：2005-08-18

申请号：US11091814

申请日：2005-03-28

Applicant: Roman Chistyakov

Inventor： Roman Chistyakov

IPC: C23C14/32 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/354 ,  C23C14/228 ,  C23C14/3414 ,  C23C14/3485 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/542 ,  H01J37/3266 ,  H01J37/32697 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3429 ,  H01J37/3455 ,  H01J37/3467 ,  H01J37/3476 ,  H01L21/02266

Abstract: Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target.

Abstract translation: 描述了用于高沉积溅射的方法和装置。 溅射源包括邻近阳极定位的阳极和阴极组件。 阴极组件包括溅射靶。 电离源产生靠近阳极和阴极组件的弱离子化等离子体。 电源在阳极和阴极组件之间产生电场，从而产生来自弱离子化等离子体的强电离等离子体。 强电离等离子体包括冲击溅射靶的第一多个离子，以在溅射靶中产生足够的热能，使得溅射靶的溅射产率与溅射靶的温度非线性相关。

公开(公告)号：US20050167263A1

公开(公告)日：2005-08-04

申请号：US11091854

申请日：2005-03-28

Applicant: Roman Chistyakov

Inventor： Roman Chistyakov

IPC: H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3266 ,  H01J37/32 ,  H01J37/32706

Abstract: Magnetically enhanced plasma processing methods and apparatus are described. A magnetically enhanced plasma processing apparatus according to the present invention includes an anode and a cathode that is positioned adjacent to the anode. An ionization source generates a weakly-ionized plasma proximate to the cathode. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in a gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma. A voltage supply applies a bias voltage to a substrate that is positioned proximate to the cathode that causes ions in the plurality of ions to impact a surface of the substrate in a manner that causes etching of the surface of the substrate

Abstract translation: 描述了磁加强等离子体处理方法和装置。 根据本发明的磁增强等离子体处理装置包括阳极和与阳极相邻的阴极。 电离源产生靠近阴极的弱离子化等离子体。 定位磁体以产生靠近弱电离等离子体的磁场。 磁场基本上俘获靠近阴极的弱离子化等离子体中的电子。 电源在阳极和阴极之间的间隙中产生电场。 电场在弱离子化等离子体中产生激发原子，并从阴极产生二次电子。 二次电子使激发的原子电离，从而产生强电离等离子体。 电压源将偏置电压施加到靠近阴极定位的衬底，其导致多个离子中的离子以导致衬底表面的蚀刻的方式冲击衬底的表面

公开(公告)号：US20050034666A1

公开(公告)日：2005-02-17

申请号：US10949427

申请日：2004-09-24

Applicant: Roman Chistyakov

Inventor： Roman Chistyakov

IPC: C23C16/452 ,  H01J37/00 ,  H01J37/32 ,  H01J37/34 ,  C23C16/00

CPC classification number: H01J37/32623 ,  H01J37/32321 ,  H01J37/3405

Abstract: The present invention relates to a plasma generator that generates a plasma with a multi-step ionization process. The plasma generator includes an excited atom source that generates excited atoms from ground state atoms supplied by a feed gas source. A plasma chamber confines a volume of excited atoms generated by the excited atom source. An energy source is coupled to the volume of excited atoms confined by the plasma chamber. The energy source raises an energy of excited atoms in the volume of excited atoms so that at least a portion of the excited atoms in the volume of excited atoms is ionized, thereby generating a plasma with a multi-step ionization process.

Abstract translation: 本发明涉及一种利用多步电离过程产生等离子体的等离子体发生器。 等离子体发生器包括激发的原子源，其从由原料气源供应的基态原子产生激发原子。 等离子体室限制由激发原子源产生的激发原子的体积。 能量源耦合到由等离子体室限制的激发原子的体积。 能量源激发激发原子的体积中的激发原子的能量，使得激发原子体积中的激发原子的至少一部分被离子化，从而通过多步电离过程产生等离子体。

公开(公告)号：US20050006220A1

公开(公告)日：2005-01-13

申请号：US10897257

申请日：2004-07-22

Applicant: Roman Chistyakov

Inventor： Roman Chistyakov

IPC: B01J19/12 ,  C23C14/34 ,  C23C14/35 ,  C23C16/452 ,  C25B9/00 ,  C25B13/00 ,  H01J7/24 ,  H01J37/32 ,  H01J37/34

CPC classification number: H01J37/32321 ,  C23C14/3471 ,  C23C14/354 ,  H01J37/34

Abstract: An apparatus for generating a strongly-ionized plasma according to the present invention includes an anode and a cathode that is positioned adjacent to the anode to form a gap there between. An ionization source generates a weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in the gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode. The secondary electrons ionize the excited atoms, thereby creating the strongly-ionized plasma.

Abstract translation: 根据本发明的用于产生强电离等离子体的装置包括阳极和阴极，阳极和阴极邻近阳极定位，以在其间形成间隙。 电离源产生靠近阴极的弱离子化等离子体。 电源在阳极和阴极之间的间隙中产生电场。 电场在弱离子化等离子体中产生激发原子，并从阴极产生二次电子。 二次电子使激发的原子电离，从而产生强电离等离子体。

公开(公告)号：US06806652B1

公开(公告)日：2004-10-19

申请号：US10249844

申请日：2003-05-12

Applicant: Roman Chistyakov

Inventor： Roman Chistyakov

IPC: H01J724

CPC classification number: H01J37/32009 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3408

Abstract: The plasma source includes a cathode assembly. An anode is positioned adjacent to the cathode assembly. An excited atom source generates an initial plasma and excited atoms from a volume of feed gas. The initial plasma and excited atoms are located proximate to the cathode assembly. A power supply generates an electric field between the cathode assembly and the anode. The electric field super-ionizes the initial plasma so as to generate a high-density plasma.

Abstract translation: 等离子体源包括阴极组件。 阳极定位成与阴极组件相邻。 激发的原子源从一定体积的进料气体中产生初始等离子体和激发的原子。 初始等离子体和激发原子位于阴极组件附近。 电源在阴极组件和阳极之间产生电场。 电场对初始等离子体进行超电离，以产生高密度等离子体。