公开(公告)号：US20210313191A1

公开(公告)日：2021-10-07

申请号：US17262807

申请日：2019-07-04

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Sei NEGORO ,  Kenji KOBAYASHI

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/67 ,  H01L21/687

Abstract: An alkaline etchant containing a quaternary ammonium hydroxide, water, and an inhibitory substance for inhibiting contact between hydroxide ions generated from the quaternary ammonium hydroxide and objects P1 to P3 to be etched is prepared. The prepared etchant is supplied to a substrate in which the polysilicon-containing objects P1 to P3 to be etched and objects O1 to O3 not to be etched, which are different from the objects P1 to P3 to be etched, are exposed, thereby etching the objects P1 to P3 to be etched while preventing the objects O1 to O3 not to be etched from being etched.

公开(公告)号：US20210066071A1

公开(公告)日：2021-03-04

申请号：US16960106

申请日：2018-11-19

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Pohling THEN ,  Kenji KOBAYASHI ,  Sadamu FUJII ,  Taiki HINODE

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/3105

Abstract: A substrate processing method and a substrate processing apparatus are provided, which solve problems of pattern collapse and particles. The substrate processing method includes: a surface modification step of modifying a surface of a substrate having an oxide thereon to improve or reduce roughness of the surface; a surface cleaning step of supplying a treatment liquid to the modified surface of the substrate to clean the surface of the substrate with the treatment liquid; and a hydrophobization step of supplying a hydrophobizing agent to the cleaned surface of the substrate to hydrophobize the surface of the substrate.

公开(公告)号：US20170301580A1

公开(公告)日：2017-10-19

申请号：US15642928

申请日：2017-07-06

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Naohiko YOSHIHARA ,  Kenji KOBAYASHI ,  Manabu OKUTANI

IPC: H01L21/687 ,  H01L21/67 ,  B05C11/08

Abstract: A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an attitude changing unit arranged to cause the substrate heating unit to undergo an attitude change between a horizontal attitude and a tilted attitude. In an organic solvent removing step to be performed following a substrate heating step of heating the substrate, the substrate heating unit undergoes an attitude change to the tilted attitude so that the upper surface of the substrate becomes tilted with respect to the horizontal surface.

公开(公告)号：US20170243736A1

公开(公告)日：2017-08-24

申请号：US15587841

申请日：2017-05-05

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji KOBAYASHI ,  Manabu OKUTANI

IPC: H01L21/02 ,  C23C16/46 ,  B08B3/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/02052 ,  B08B3/022 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02057 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67303 ,  H01L21/68728 ,  H01L21/68764 ,  H01L21/68792

Abstract: A substrate treatment method is provided, which includes: an organic solvent replacing step of supplying an organic solvent, whereby a liquid film of the organic solvent is formed on the substrate as covering the upper surface of the substrate to replace a rinse liquid with the organic solvent; a substrate temperature increasing step of allowing the temperature of the upper surface of the substrate to reach a first temperature level higher than the boiling point of the organic solvent after the formation of the organic solvent liquid film, whereby a vapor film of the organic solvent is formed below the entire organic solvent liquid film between the organic solvent liquid film and the substrate to levitate the organic solvent liquid film above the organic solvent vapor film; and an organic solvent removing step of removing the levitated organic solvent liquid film from above the upper surface of the substrate.

公开(公告)号：US20160247697A1

公开(公告)日：2016-08-25

申请号：US15051034

申请日：2016-02-23

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Jun SAWASHIMA ,  Akito HATANO ,  Kenji KOBAYASHI ,  Yuta NISHIMURA ,  Motoyuki SHIMAI ,  Toyohide HAYASHI

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67051

Abstract: A supply flow passage branches into a plurality of upstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis of a substrate. A return flow passage is connected to the upstream flow passage. A downstream heater heats liquid flowing through the upstream flow passage. A downstream switching unit supplies the liquid, supplied to the plurality of upstream flow passages from the supply flow passage, to one of the plurality of discharge ports and the return flow passage, selectively.

Abstract translation: 供给流路分支成多个上游流路。 多个排出口分别设置在与基板的旋转轴线不同的多个位置。 回流通道连接到上游流动通道。 下游加热器加热流过上游流动通道的液体。 下游开关单元选择性地将从供给流路供给到多个上游流路的液体供给到多个排出口和返回流路中的一个。

公开(公告)号：US20160240399A1

公开(公告)日：2016-08-18

申请号：US15044452

申请日：2016-02-16

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji KOBAYASHI ,  Jun SAWASHIMA ,  Yuta NISHIMURA ,  Akihiro Nakashima ,  Motoyuki SHIMAI ,  Akito HATANO

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/67248

Abstract: A supply flow passage branches into a plurality of upstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis of a substrate. Hydrogen peroxide water, that is one of components of a chemical liquid (SPM), is supplied to the upstream flow passage from a component liquid flow passage. A mixing ratio changing unit including a plurality of first flow control valves and a plurality of second flow control valves independently changes mixing ratios of sulfuric acid and hydrogen peroxide water included in the chemical liquid to be discharged from the plurality of discharge ports for each of the upstream flow passages.

Abstract translation: 供给流路分支成多个上游流路。 多个排出口分别设置在与基板的旋转轴线不同的多个位置。 作为化学液体（SPM）的成分之一的过氧化氢水从成分液体流路供给到上游流路。 包括多个第一流量控制阀和多个第二流量控制阀的混合比例改变单元独立地改变从多个排出口排出的药液中包含的硫酸和过氧化氢的混合比， 上游流通道。