公开(公告)号：US09964800B2

公开(公告)日：2018-05-08

申请号：US15341302

申请日：2016-11-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Nakada ,  Takayuki Cho ,  Daisuke Kubota

IPC: G02F1/1335 ,  G02F1/1337 ,  G06F3/041 ,  H01L27/32 ,  H01L51/52 ,  G06F3/044 ,  G02F1/1333

CPC classification number: G02F1/133553 ,  G02F1/13338 ,  G02F1/133514 ,  G02F1/133555 ,  G02F1/133707 ,  G02F2201/123 ,  G02F2201/44 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/044 ,  G06F2203/04103 ,  H01L27/322 ,  H01L27/3225 ,  H01L27/323 ,  H01L27/3232 ,  H01L51/5206 ,  H01L2227/323 ,  H01L2251/5307 ,  H01L2251/5361

Abstract: A novel display device that is highly convenient or reliable. The display device includes a first display element, a second display element, a color film, and a reflective electrode. The first display element includes a first pixel electrode and a liquid crystal layer. The second display element includes a second pixel electrode and a light-emitting layer. The first pixel electrode is electrically connected to the reflective electrode. The reflective electrode includes an opening through which light emitted from the light-emitting layer passes. The color film faces the reflective electrode with the liquid crystal layer placed therebetween.

公开(公告)号：US09960213B2

公开(公告)日：2018-05-01

申请号：US14690834

申请日：2015-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoyuki Senda ,  Masataka Nakada ,  Takayuki Abe ,  Koji Kusunoki ,  Hideaki Shishido

IPC: H01L27/32 ,  G06F3/044 ,  H01L51/52 ,  G06F3/045 ,  G06F3/041 ,  G06F15/02 ,  H01L51/00

CPC classification number: H01L27/323 ,  G06F3/0412 ,  G06F3/044 ,  G06F3/045 ,  G06F15/0216 ,  H01L27/322 ,  H01L51/0097 ,  H01L51/5253 ,  H01L51/5284 ,  H01L2251/5338

Abstract: A flexible input and output device in which defects due to a crack is reduced. The input and output device includes a first flexible substrate, a second flexible substrate, a first buffer layer, a first crack inhibiting layer, an input device, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The first buffer layer, the first crack inhibiting layer, and the input device are provided on the first surface side of the first flexible substrate. The first buffer layer includes a region overlapping with the first crack inhibiting layer. The first buffer layer is between the first crack inhibiting layer and the first surface. The input device includes a transistor and a sensor element. The light-emitting element is provided on the second surface side of the second flexible substrate.

公开(公告)号：US09899626B2

公开(公告)日：2018-02-20

申请号：US14632115

申请日：2015-02-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka Nakada ,  Takayuki Abe ,  Naoyuki Senda

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L51/5246 ,  H01L27/323 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5243 ,  H01L2251/5338 ,  Y02E10/549

Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.

公开(公告)号：US09553114B2

公开(公告)日：2017-01-24

申请号：US14516103

申请日：2014-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Nakada ,  Hidenori Mori ,  Hisashi Ohtani

IPC: H01L29/10 ,  H01L27/12 ,  G02F1/1335 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/133553 ,  G02F1/136204 ,  G02F2001/136222 ,  G02F2201/123 ,  G02F2203/02 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/7869

Abstract: A novel display device capable of adjusting color purity is provided. A novel display device with improved adhesion of a color filter is provided. A novel display device capable of excellent reflective display is provided. The display device includes a transistor, a reflective electrode layer formed on the same surface as a source electrode layer or a drain electrode layer of the transistor, a first insulating layer over the reflective electrode layer, a coloring layer which is over the first insulating layer and overlaps with the reflective electrode layer, a second insulating layer over the coloring layer, and a pixel electrode layer over the second insulating layer. The coloring layer includes at least a first opening and a second opening. The pixel electrode layer is electrically connected to the transistor through the first opening. The second insulating layer is in contact with the first insulating layer in the second opening.

Abstract translation: 提供了能够调节色纯度的新型显示装置。 提供了一种具有改进的滤色器附着力的新型显示装置。 提供能够出色的反射显示的新颖的显示装置。 显示装置包括：晶体管，形成在与晶体管的源电极层或漏极电极层相同的表面上的反射电极层，反射电极层上的第一绝缘层，位于第一绝缘层之上的着色层 并与反射电极层重叠，着色层上的第二绝缘层，以及位于第二绝缘层上的像素电极层。 着色层至少包括第一开口和第二开口。 像素电极层通过第一开口与晶体管电连接。 第二绝缘层与第二开口中的第一绝缘层接触。

公开(公告)号：US09525011B2

公开(公告)日：2016-12-20

申请号：US14690834

申请日：2015-04-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoyuki Senda ,  Masataka Nakada ,  Takayuki Abe ,  Koji Kusunoki ,  Hideaki Shishido

IPC: H01L27/32 ,  G06F3/044 ,  H01L51/52 ,  H01L51/00 ,  G06F15/02 ,  G06F3/041 ,  G06F3/045

Abstract: A flexible input and output device in which defects due to a crack is reduced. The input and output device includes a first flexible substrate, a second flexible substrate, a first buffer layer, a first crack inhibiting layer, an input device, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The first buffer layer, the first crack inhibiting layer, and the input device are provided on the first surface side of the first flexible substrate. The first buffer layer includes a region overlapping with the first crack inhibiting layer. The first buffer layer is between the first crack inhibiting layer and the first surface. The input device includes a transistor and a sensor element. The light-emitting element is provided on the second surface side of the second flexible substrate.

公开(公告)号：US12142694B2

公开(公告)日：2024-11-12

申请号：US18208101

申请日：2023-06-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masahiro Katayama ,  Masataka Nakada

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/146 ,  H01L29/49 ,  H10K59/121

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US11942554B2

公开(公告)日：2024-03-26

申请号：US17585645

申请日：2022-01-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu Hosaka ,  Yukinori Shima ,  Masataka Nakada ,  Masami Jintyou

IPC: H01L29/12 ,  H01L21/426 ,  H01L27/12 ,  H01L29/04 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1368 ,  H10K50/115 ,  H10K59/12 ,  H10K59/40

CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/423 ,  H01L29/42384 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78648 ,  G02F1/1368 ,  H01L21/426 ,  H01L27/1225 ,  H10K50/115 ,  H10K59/12 ,  H10K59/40

Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US11852937B2

公开(公告)日：2023-12-26

申请号：US17863575

申请日：2022-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Yukinori Shima ,  Daisuke Kurosaki ,  Masataka Nakada

IPC: G02F1/1362 ,  G02F1/1368

CPC classification number: G02F1/136286 ,  G02F1/1368

Abstract: The manufacturing yield of a display device is improved. The resistance of a display device to ESD is increased. The display device includes a substrate, a display portion, a connection terminal, a first wiring, and a second wiring. The first wiring is electrically connected to the connection terminal and includes a portion positioned between the connection terminal and the display portion. The second wiring is electrically connected to the connection terminal, is positioned between the connection terminal and an end portion of the substrate, and includes a portion in which a side surface is exposed at an end portion of the substrate. The display portion includes a transistor. The transistor includes a semiconductor layer, a gate insulating layer, and a gate electrode. The semiconductor layer and the second wiring include a metal oxide.

公开(公告)号：US11699762B2

公开(公告)日：2023-07-11

申请号：US17392766

申请日：2021-08-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masahiro Katayama ,  Masataka Nakada

IPC: H01L29/786 ,  H01L27/146 ,  H10K59/121 ,  H01L27/12 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14634 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78696 ,  H10K59/1216

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulting film is provided between the first and the second conductive films.

公开(公告)号：US11355529B2

公开(公告)日：2022-06-07

申请号：US17005456

申请日：2020-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Daisuke Kurosaki ,  Masataka Nakada ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.