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    Imaging system and manufacturing apparatus
    41.
    发明授权
    Imaging system and manufacturing apparatus 有权

    公开(公告)号：US10573621B2

    公开(公告)日：2020-02-25

    申请号：US15434489

    申请日：2017-02-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Akio Endo ,  Yusuke Yoshitani ,  Jun Koyama ,  Naoto Kusumoto

    IPC: H01L23/00 ,  B23K20/02 ,  B23K20/26 ,  H01L27/146 ,  H04N5/225 ,  H04N5/378 ,  H01L27/12 ,  H01L29/786

    Abstract: An imaging system using ultraviolet light or a manufacturing apparatus including the imaging system is provided. An imaging system includes an imaging element and a light source, which operates the imaging element with light that is emitted from the light source and reflected or transmitted by an object. A pixel included in the imaging element includes a photoelectric conversion element and a charge holding part. The light source has a function of emitting ultraviolet light to an object. The photoelectric conversion element is irradiated with the ultraviolet light reflected or transmitted by the object. The photoelectric conversion element has a function of changing the potential of the charge holding part when irradiated with the ultraviolet light and retaining the potential when not irradiated with the ultraviolet light.

    Imaging device, module, and electronic device
    42.
    发明授权
    Imaging device, module, and electronic device 有权

    公开(公告)号：US10109667B2

    公开(公告)日：2018-10-23

    申请号：US15279735

    申请日：2016-09-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Naoto Kusumoto

    IPC: H01L27/146 ,  H04N5/225 ,  H04N5/232 ,  H01L29/786 ,  H01L31/0272

    Abstract: An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A transistor is provided between a power supply line and a photoelectric conversion element. Exposure is performed by turning on the transistor. Imaging data is retained in a charge retention portion by turning off the transistor.

    Flexible substrate processing apparatus
    45.
    发明授权
    Flexible substrate processing apparatus 有权
    柔性基板处理装置

    公开(公告)号：US09487880B2

    公开(公告)日：2016-11-08

    申请号：US13680269

    申请日：2012-11-19

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Minoru Takahashi ,  Yumiko Saito ,  Junpei Momo ,  Tamae Moriwaka ,  Naoto Kusumoto

    IPC: C25D11/00 ,  C25D9/02 ,  C25D5/54 ,  C25D13/16 ,  C25D1/18 ,  C25D7/06 ,  C25D13/04 ,  C25D5/48 ,  C25B3/04

    CPC classification number: C25D11/00 ,  C25B3/04 ,  C25D1/18 ,  C25D5/48 ,  C25D7/0614 ,  C25D9/02 ,  C25D11/005 ,  C25D13/04 ,  C25D13/16 ,  Y02E60/122 ,  Y02P70/54

    Abstract: To provide a flexible substrate processing apparatus which allows the stable reduction of an oxide contained in a film-like structure body formed on a flexible substrate. The apparatus has a substrate carrying-out portion where a flexible substrate on which a film-like structure body is formed is unwound; a reduction treatment portion where an oxide contained in the film-like structure body formed on the flexible substrate is electrochemically reduced; a washing portion where the flexible substrate and the film-like structure body are washed; a drying portion where the flexible substrate and the film-like structure body are dried; and a substrate carrying-in portion where the flexible substrate on which the film-like structure body is formed is taken up.

    Abstract translation: 提供一种柔性基板处理装置，其能够稳定地还原形成在柔性基板上的膜状结构体中所含的氧化物。 该装置具有：其上形成有薄膜状结构体的柔性基板的基板搬出部， 减少处理部分，其中形成在柔性基板上的膜状结构体中所含的氧化物被电化学还原; 洗涤部分，其中柔性基底和膜状结构体被洗涤; 将柔性基板和膜状结构体干燥的干燥部; 以及其上形成有薄膜状结构体的柔性基板的基板搬入部。

    Semiconductor device
    46.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08963148B2

    公开(公告)日：2015-02-24

    申请号：US14079694

    申请日：2013-11-14

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Daisuke Matsubayashi ,  Satoshi Shinohara ,  Wataru Sekine ,  Naoto Kusumoto

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L29/78645 ,  H01L29/78648

    Abstract: Provided is a semiconductor device having a structure which can suppress a decrease in electrical characteristics, which becomes more significant with miniaturization. The semiconductor device includes a plurality of gate electrode layers separated from each other. One of the plurality of gate electrode layers includes a region which overlaps with a part of an oxide semiconductor layer, a part of a source electrode layer, and a part of a drain electrode layer. Another of the plurality of gate electrode layers overlaps with a part of an end portion of the oxide semiconductor layer. The length in the channel width direction of each of the source electrode layer and the drain electrode layer is shorter than that of the one of the plurality of gate electrode layers.

    Abstract translation: 提供一种能够抑制电特性降低的结构的半导体器件，其在小型化时变得更加显着。 半导体器件包括彼此分离的多个栅极电极层。 多个栅电极层中的一个包括与氧化物半导体层的一部分，源电极层的一部分和漏电极层的一部分重叠的区域。 多个栅电极层中的另一个与氧化物半导体层的端部的一部分重叠。 源极电极层和漏极电极层的沟道宽度方向的长度比多个栅极电极层的长度短。

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