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    Electronic device
    41.
    发明授权
    Electronic device 有权

    公开(公告)号：US09954531B2

    公开(公告)日：2018-04-24

    申请号：US15050699

    申请日：2016-02-23

    Applicant: Semiconductor Energy Laboratory Co., LTD.

    Inventor： Takayuki Ikeda ,  Munehiro Kozuma ,  Takeshi Aoki

    IPC: H03K19/177 ,  H03K19/00

    CPC classification number: H03K19/17724 ,  H03K19/0008 ,  H03K19/1774 ,  H03K19/1776 ,  H03K19/17776

    Abstract: A novel electronic device including a reconfigurable circuit is provided. In the electronic device including a reconfigurable circuit capable of executing multi-context operation, a context selection signal is locally generated. For example, a context selection signal is generated in the reconfigurable circuit with the use of context determination data contained in an output of another logic block, for example. The range of application of the context selection signal can be set as appropriate by a user. Thus, multi-context operation performed locally and partly enables efficient use of the circuit. Memory usage can be reduced and its efficiency can be improved compared to the case of using global multi-context driving. Other embodiments may be disclosed and claimed.

    Semiconductor device
    42.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US09935617B2

    公开(公告)日：2018-04-03

    申请号：US14574884

    申请日：2014-12-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takeshi Aoki ,  Munehiro Kozuma ,  Yoshiyuki Kurokawa

    IPC: H03K3/00 ,  H03K3/012 ,  H03K17/56 ,  H03K19/173

    CPC classification number: H03K3/012 ,  H03K17/56 ,  H03K19/173

    Abstract: A semiconductor device that can operate normally with lower power consumption is provided. The semiconductor device includes a pair of first circuits which each include a first transistor and a second transistor capable of controlling the supply of a first signal to a gate of the first transistor, and a second circuit which is capable of generating a second signal which is to be supplied to a gate of the second transistor and which has a larger amplitude than the first signal. One of a source and a drain of one of the first transistors included in the pair of first circuits is electrically connected to one of a source and a drain of the other of the first transistors. The first signals supplied to the gates of the first transistors in the pair of first circuits have potentials with different logic levels.

    Semiconductor device
    45.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09287878B2

    公开(公告)日：2016-03-15

    申请号：US14689262

    申请日：2015-04-17

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Nora Bjorklund ,  Takeshi Aoki ,  Yoshiyuki Kurokawa

    IPC: H03K19/177 ,  H03K19/173

    CPC classification number: H03K19/1776 ,  H03K19/1733 ,  H03K19/17736

    Abstract: A dynamic reconfigurable semiconductor device is provided. The semiconductor device includes two logic blocks, a pass transistor, two selection transistors and a precharge transistor. The two selection transistors are arranged to sandwich the pass transistor so that a source and a drain of the pass transistor are located between the sources of the two selection transistors. The sources and the drains of the two selection transistors are located between the two logic blocks. When the two selection transistors are in off-state, a potential can be supplied to the source or the drain of the pass transistor via the precharge transistor, and by electrical conduction, another potential for a context is applied to the gate of the pass transistor. When the context is executed, the gate of the pass transistor is in a floating state, the two selection transistors are in on-state, and the precharge transistor is in off-state.

    Abstract translation: 提供动态可重构半导体器件。 半导体器件包括两个逻辑块，传输晶体管，两个选择晶体管和预充电晶体管。 两个选择晶体管被布置成夹持传输晶体管，使得传输晶体管的源极和漏极位于两个选择晶体管的源极之间。 两个选择晶体管的源极和漏极位于两个逻辑块之间。 当两个选择晶体管处于截止状态时，可以通过预充电晶体管将电位提供给传输晶体管的源极或漏极，并且通过电导通，将上下文的另一个电位施加到传输晶体管的栅极 。 当执行上下文时，传输晶体管的栅极处于浮置状态，两个选择晶体管处于导通状态，并且预充电晶体管处于截止状态。

    Semiconductor device, driving method thereof, and electronic appliance
    46.
    发明授权
    Semiconductor device, driving method thereof, and electronic appliance 有权
    半导体装置及其驱动方法以及电子设备

    公开(公告)号：US09225329B2

    公开(公告)日：2015-12-29

    申请号：US14635087

    申请日：2015-03-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Munehiro Kozuma ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Takeshi Aoki ,  Takashi Nakagawa

    IPC: H03K19/17 ,  G11C14/00 ,  H03K19/00 ,  H01L29/786 ,  H01L27/12 ,  H03K19/177 ,  G06F1/16

    CPC classification number: H03K19/0008 ,  G06F1/16 ,  H01L27/1207 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H03K19/1776

    Abstract: A semiconductor device in which operation delay due to stop and restart of the supply of a power supply potential is suppressed is provided. Potentials corresponding to data held in first and second nodes while the supply of a power supply potential is continued are backed up in third and fourth nodes while the supply of the power supply potential is stopped. After the supply of the power supply potential is restarted, data are restored to the first and second nodes by utilizing a change in channel resistance of a transistor whose gate is electrically connected to the third or fourth node. Note that shoot-through current is suppressed at the time of data restoration by electrically disconnecting the power supply potential and the first or second node from each other.

    Abstract translation: 提供了一种半导体装置，其中抑制了由于电源电位供应的停止和重启而导致的操作延迟。 在电源电位的供给停止的同时，在供给电源电位的同时保持在第一节点和第二节点上的数据对应的电位被备份在第三节点和第四节点中。 在重新开始供电电位之后，通过利用栅极电连接到第三或第四节点的晶体管的沟道电阻的变化，将数据恢复到第一和第二节点。 注意，通过将电源电位和第一或第二节点彼此电断开来，在数据恢复时抑制直通电流。

    Semiconductor device and manufacturing method thereof
    47.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US09153619B2

    公开(公告)日：2015-10-06

    申请号：US14600279

    申请日：2015-01-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Hikaru Tamura ,  Munehiro Kozuma ,  Masataka Ikeda ,  Takeshi Aoki

    IPC: H01L27/146

    CPC classification number: H01L27/14616 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L29/7869 ,  H01L31/1055 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378

    Abstract: In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

    Abstract translation: 在其中多个像素以矩阵形式布置的CMOS图像传感器中，其中沟道形成区域包括氧化物半导体的晶体管被​​用于处于像素部分的电荷累积控制晶体管和复位晶体管。 在矩阵中排列的所有像素中执行信号电荷累积部分的复位操作之后，在所有像素中执行光电二极管的电荷累积操作，并且每行执行来自像素的信号的读取操作。 因此，可以采取没有失真的图像。

    SEMICONDUCTOR DEVICE
    48.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150188520A1

    公开(公告)日：2015-07-02

    申请号：US14574884

    申请日：2014-12-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takeshi Aoki ,  Munehiro Kozuma ,  Yoshiyuki Kurokawa

    IPC: H03K3/012 ,  H03K17/56

    CPC classification number: H03K3/012 ,  H03K17/56 ,  H03K19/173

    Abstract: A semiconductor device that can operate normally with lower power consumption is provided. The semiconductor device includes a pair of first circuits which each include a first transistor and a second transistor capable of controlling the supply of a first signal to a gate of the first transistor, and a second circuit which is capable of generating a second signal which is to be supplied to a gate of the second transistor and which has a larger amplitude than the first signal. One of a source and a drain of one of the first transistors included in the pair of first circuits is electrically connected to one of a source and a drain of the other of the first transistors. The first signals supplied to the gates of the first transistors in the pair of first circuits have potentials with different logic levels.

    Abstract translation: 提供了能够以较低功耗正常工作的半导体器件。 半导体器件包括一对第一电路，每个第一电路都包括第一晶体管和能够控制向第一晶体管的栅极提供第一信号的第二晶体管，以及能够产生第二信号的第二电路， 被提供给第二晶体管的栅极并且具有比第一信号更大的幅度。 包括在该对第一电路中的第一晶体管之一的源极和漏极之一电连接到另一个第一晶体管的源极和漏极之一。 提供给该对第一电路中的第一晶体管的栅极的第一信号具有不同逻辑电平的电位。

    Semiconductor device comprising operation circuits and a switch circuit
    50.
    发明授权
    Semiconductor device comprising operation circuits and a switch circuit 有权

    公开(公告)号：US12190079B2

    公开(公告)日：2025-01-07

    申请号：US17716239

    申请日：2022-04-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Munehiro Kozuma ,  Takeshi Aoki ,  Seiichi Yoneda ,  Yoshiyuki Kurokawa

    IPC: G06F7/544 ,  G06N3/063

    Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a plurality of operation circuits that can switch different kinds of operation processing; a plurality of switch circuits that can switch a connection state between the operation circuits; and a controller. The operation circuit includes a first memory that stores data corresponding to a weight parameter used in the plurality of kinds of operation processing. The operation circuit executes a product-sum operation by switching weight data in accordance with a context. The switch circuit includes a second memory that stores data for switching a plurality of connection states in response to switching of a second context signal. The controller generates a second context signal on the basis of a first context signal. The amount of data stored in the second memory can be smaller than the amount of data stored in the first memory in the operation circuit.

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