公开(公告)号：US20180175210A1

公开(公告)日：2018-06-21

申请号：US15896925

申请日：2018-02-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI ,  Shunsuke ADACHI ,  Takuya HIROHASHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/24 ,  H01L29/04 ,  H01L29/49

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

公开(公告)号：US20180090602A1

公开(公告)日：2018-03-29

申请号：US15825153

申请日：2017-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Yasuharu HOSAKA

IPC: H01L29/66 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.

公开(公告)号：US20170323908A1

公开(公告)日：2017-11-09

申请号：US15583325

申请日：2017-05-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a transistor including an oxide semiconductor film, field-effect mobility and reliability are improved. A semiconductor device includes a gate electrode, an insulating film over the gate electrode, an oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film is formed using In oxide or In—Zn oxide. The second oxide semiconductor film is formed using In-M-Zn oxide (M is Al, Ga, or Y) and includes a region where the number of In atoms is 40% or more and 50% or less and the number of M atoms is 5% or more and 30% or less of the total number of In, M, and Zn atoms.

公开(公告)号：US20170243759A1

公开(公告)日：2017-08-24

申请号：US15431002

申请日：2017-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masami JINTYOU ,  Junichi KOEZUKA ,  Takashi HAMOCHI ,  Yasuharu HOSAKA

IPC: H01L21/385 ,  H01L21/44 ,  H01L21/4757 ,  H01L21/443 ,  H01L29/66 ,  H01L21/02 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04

CPC classification number: H01L21/385 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/0234 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US20160351721A1

公开(公告)日：2016-12-01

申请号：US15232896

申请日：2016-08-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI ,  Shunsuke ADACHI ,  Takuya HIROHASHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

公开(公告)号：US20160260837A1

公开(公告)日：2016-09-08

申请号：US15058832

申请日：2016-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasuharu HOSAKA ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a second insulating film, a second gate electrode, and a third insulating film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side, and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film include In, M, and Zn (M is Al, Ga, Y, or Sn). In a region of the second oxide semiconductor film, the number of atoms of In is smaller than that in the first oxide semiconductor film. The second gate electrode includes at least one metal element included in the oxide semiconductor film.

Abstract translation: 抑制包含氧化物半导体膜的晶体管的电特性的变化。 晶体管包括第一栅电极，第一绝缘膜，氧化物半导体膜，源电极，漏电极，第二绝缘膜，第二栅电极和第三绝缘膜。 氧化物半导体膜包括第一栅电极侧的第一氧化物半导体膜和第一氧化物半导体膜上的第二氧化物半导体膜。 第一氧化物半导体膜和第二氧化物半导体膜包括In，M和Zn（M是Al，Ga，Y或Sn）。 在第二氧化物半导体膜的区域中，In的原子数小于第一氧化物半导体膜中的原子数。 第二栅电极包括包含在氧化物半导体膜中的至少一个金属元件。

公开(公告)号：US20160147099A1

公开(公告)日：2016-05-26

申请号：US15012092

申请日：2016-02-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1368 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1335 ,  G02F1/1333 ,  G02F1/1337

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

Abstract translation: 显示装置包括：第一基板，设置有位于像素区域外部并与其邻近的驱动器电路区域，并且包括至少一个第二晶体管，其向像素区域中的每个像素中的第一晶体管提供信号;第二晶体管， 面对第一衬底的衬底，第一衬底和第二衬底之间的液晶层，在第一晶体管和第二晶体管上的包括无机绝缘材料的第一层间绝缘膜，包括有机绝缘材料的第二层间绝缘膜， 第一层间绝缘膜和在第二层间绝缘膜上的包含无机绝缘材料的第三层间绝缘膜。 第三层间绝缘膜设置在像素区域的上部区域的一部分中，并且在驱动电路区域的内侧具有边缘部分。

公开(公告)号：US20160020329A1

公开(公告)日：2016-01-21

申请号：US14796403

申请日：2015-07-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yukinori SHIMA ,  Yasuharu HOSAKA

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/24 ,  H01L29/04 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region.

Abstract translation: 晶体管包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，与氧化物半导体膜电连接的源电极和漏电极。 氧化物半导体膜包括栅电极侧的第一氧化物半导体膜和第一氧化物半导体膜上的第二氧化物半导体膜。 第一氧化物半导体膜包括其中In的原子比例大于M（M为Ti，Ga，Sn，Y，Zr，La，Ce，Nd或Hf）的原子比例的第一区域。 第二氧化物半导体膜包括其中In的原子比例小于第一氧化物半导体膜的原子比例的第二区域。 第二区域包括比第一区域薄的部分。

公开(公告)号：US20150155169A1

公开(公告)日：2015-06-04

申请号：US14552064

申请日：2014-11-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Noritaka ISHIHARA ,  Motoki NAKASHIMA ,  Yoichi KUROSAWA ,  Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA

IPC: H01L21/02

CPC classification number: H01L27/127 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/425 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/60 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

Abstract translation: 提供一种制造包含具有导电性的氧化物半导体膜的半导体器件的方法，或者包括具有透光性和导电性的氧化物半导体膜的半导体器件的制造方法。 制造半导体器件的方法包括以下步骤：在第一绝缘膜上形成氧化物半导体膜，在氧化物半导体膜中包含的氧被释放的气氛中进行第一次热处理，并在含氢的 从而形成具有导电性的氧化物半导体膜。

公开(公告)号：US20250169180A1

公开(公告)日：2025-05-22

申请号：US18839759

申请日：2023-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Chieko MISAWA ,  Ami SATO ,  Masayoshi DOBASHI

IPC: H10D86/40 ,  H10D30/67 ,  H10D86/01 ,  H10D86/60

Abstract: A semiconductor device having a high degree of integration is provided. The semiconductor device includes a first and a second transistor, and an insulating layer. The first transistor includes a source electrode, a drain electrode over the insulating layer over the source electrode, a first semiconductor layer in contact with a top surface of the source electrode, an inner wall of an opening provided in the insulating layer, and a top surface of the drain electrode, a first gate insulating layer in contact with a top surface and a side surface of the first semiconductor layer, and a first gate electrode over the first gate insulating layer that includes a region overlapping with the inner wall of the opening. The second transistor includes a second semiconductor layer over the insulating layer, the source electrode in contact with one of a top surface and a side surface of the second semiconductor layer, the drain electrode in contact with the other of the top surface and the side surface of the second semiconductor layer, a second gate insulating layer in contact with the top surface of the second semiconductor layer, a top surface and a side surface of the source electrode, and a top surface and a side surface of the drain electrode, and a second gate electrode over the second gate insulating layer. The first semiconductor layer is in contact with the second gate electrode.