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公开(公告)号:US09493746B2
公开(公告)日:2016-11-15
申请号:US14504279
申请日:2014-10-01
Inventor: Jinhwan Park , Pyungcheon Lee , Jaechan Park , Youngmin Lee , Wooyong Lee , Jinwoo Park , Kwangmyung Cho , Heejin Hwang
CPC classification number: C12N9/0008 , C12P7/18 , C12P7/24 , C12Y102/01057 , Y02P20/52
Abstract: Recombinant butyraldehyde dehydrogenases (Blds) with improved production of 1,4-BDO, as well as recombinant microorganisms comprising polynucleotides encoding the recombinant Blds, and methods of producing 1,4-BDO by using the recombinant microorganisms.
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公开(公告)号:US12301742B2
公开(公告)日:2025-05-13
申请号:US18120021
申请日:2023-03-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junghyun Im , Joungki Park , Jinwoo Park , Seungchang Baek , Yoonhee Lee , Jungwoo Choi , Sungho Cho , Hangyu Hwang , Jongchul Choi
Abstract: An electronic device according to an embodiment may include a housing comprising: an outer portion defining at least a portion of an exterior of the electronic device and comprising a first conductive material, an inner portion comprising a second conductive material having a first melting point different from that of the first conductive material and at least partially defining a space for receiving multiple electronic components arranged inside the electronic device, and a middle portion comprising a third conductive material having a second melting point and an injection molded insulator, wherein the third conductive material of the middle portion and the first conductive material of the outer portion are coupled to form a concave-convex structure, a difference between the first melting point and the second melting point is in a first range, and the third conductive material of the middle portion is electrically connected to the second conductive material of the inner portion.
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公开(公告)号:US20240186277A1
公开(公告)日:2024-06-06
申请号:US18481823
申请日:2023-10-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinwoo Park , Unbyoung Kang , Chungsun Lee
IPC: H01L23/00 , H01L25/065
CPC classification number: H01L24/32 , H01L24/16 , H01L24/17 , H01L24/73 , H01L25/0657 , H01L2224/16148 , H01L2224/17517 , H01L2224/26125 , H01L2224/32059 , H01L2224/32145 , H01L2224/73204 , H01L2225/06513 , H01L2225/06541 , H01L2225/06555 , H01L2924/1434 , H01L2924/3511 , H10B80/00
Abstract: A semiconductor package includes a plurality of semiconductor chips that face each other, a plurality of bumps disposed on a front surface or a rear surface of one of the plurality of semiconductor chips, an underfill layer that surrounds the plurality of bumps, and a plurality of insulating frames spaced apart from each other on the front or rear surface of one of the plurality of semiconductor chips. The plurality of insulating frames overlap a plurality of corner regions of the one of the plurality of semiconductor chips in a direction in which the plurality of semiconductor chips face each other.
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公开(公告)号:US12002726B2
公开(公告)日:2024-06-04
申请号:US18112715
申请日:2023-02-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinwoo Park , Jongho Lee , Yeongkwon Ko
CPC classification number: H01L23/3157 , H01L21/568 , H01L23/293 , H01L23/49816 , H01L23/49827 , H01L24/16 , H01L25/18 , H01L25/50 , H01L2224/1012 , H01L2224/14 , H01L2224/16225 , H01L2224/8185
Abstract: A method of manufacture for a semiconductor package includes; forming a molding member on side surfaces of the semiconductor chips, using an adhesive to attach a carrier substrate to upper surfaces of the molding member and the semiconductor chips, using a first blade having a first blade-width to cut away selected portions of the carrier substrate and portions of the adhesive underlying the selected portions of the carrier substrate, and using the first blade to partially cut into an upper surface of the molding member to form a first cutting groove, wherein the selected portions of the carrier substrate are dispose above portions of the molding member between adjacent ones of semiconductor chips, using a second blade having a second blade-width narrower than the first blade-width to cut through a lower surface of the molding member to form a second cutting groove, wherein a combination of the first cutting groove and the second cutting groove separate a package structure including a semiconductor chip supported by a cut portion of the carrier substrate and bonding the package structure to an upper surface of a package substrate.
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公开(公告)号:US11972763B2
公开(公告)日:2024-04-30
申请号:US17422690
申请日:2020-09-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jooyong Byeon , Jinwoo Park , Juwan Lee , Jaeyung Yeo
Abstract: Various embodiments of the disclosure provide an electronic device and a method of operating the same, the electronic device including: a speech recognition module; a memory configured to store information corresponding to a plurality of domains related to a collaborative task; and a processor operatively connected to the speech recognition module or the memory, wherein the processor is configured to receive a user voice from a user, analyze the received user voice using the speech recognition module to determine whether or not to perform a collaborative task, if the collaborative task is determined to be performed, select at least one participant related to the collaborative task, collect information related to the collaborative task from the user or an electronic device of the selected participant, and perform the collaborative task, based on the collected information. Various embodiments may be provided.
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公开(公告)号:US20240055414A1
公开(公告)日:2024-02-15
申请号:US18299795
申请日:2023-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinwoo Park , Unbyoung Kang , Chungsun Lee
IPC: H01L25/10 , H01L23/31 , H01L23/538 , H01L23/498 , H01L23/00 , H01L25/00
CPC classification number: H01L25/105 , H01L23/3128 , H01L23/5383 , H01L23/5385 , H01L23/49811 , H01L24/16 , H01L24/32 , H01L24/73 , H01L23/49816 , H01L24/48 , H01L25/50 , H01L2224/16227 , H01L2224/32225 , H01L2224/73253 , H01L2224/48227
Abstract: A semiconductor package includes a first redistribution wiring layer, a first semiconductor device on an upper surface of the first redistribution wiring layer, a first sealing member on the first semiconductor device, a second redistribution wiring layer on the first sealing member such that a peripheral region of a lower surface of the second redistribution wiring layer is free of the first sealing member, at least one second semiconductor device on an upper surface of the second redistribution wiring layer, and a plurality of bonding wirings electrically connecting first redistribution connection pads on a lower surface of the first redistribution wiring layer and second redistribution connection pads on the peripheral region of the lower surface of the second redistribution wiring layer.
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公开(公告)号:US11855674B2
公开(公告)日:2023-12-26
申请号:US17311109
申请日:2019-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jungsik Park , Yoonjung Kim , Gyubok Park , Dongyeon Kim , Yonghwa Kim , Jinwoo Park , Jinho Lim
IPC: H01Q1/24 , H04B1/3827 , H01Q5/307 , H01Q1/48 , H01Q9/04 , H01Q9/16 , H04R1/02 , H01Q21/00 , H01Q21/06 , H04M1/02
CPC classification number: H04B1/3827 , H01Q1/243 , H01Q1/48 , H01Q5/307 , H01Q9/0407 , H01Q9/16 , H01Q21/0025 , H01Q21/062 , H01Q21/065 , H04M1/0266 , H04R1/02 , H04R1/025 , H04R2499/11 , H04R2499/15
Abstract: An electronic device is provided. The electronic device includes a front plate disposed on a display, a back plate disposed on a back surface of the electronic device, a side member placed between the front plate and the back plate and forming an outer appearance of the electronic device together with the front plate and the back plate, and first, second, and third antenna modules including a plurality of conductive plates configured to transmit/receive a signal in a specified first frequency band and disposed between the front plate and the back plate so as to be adjacent to the side member. At least a portion of the side member is able to be used as an antenna of a signal in a specified second frequency band different from the specified first frequency band.
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公开(公告)号:US11610828B2
公开(公告)日:2023-03-21
申请号:US17177725
申请日:2021-02-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinwoo Park , Jongho Lee , Yeongkwon Ko
Abstract: A method of manufacture for a semiconductor package includes; forming a molding member on side surfaces of the semiconductor chips, using an adhesive to attach a carrier substrate to upper surfaces of the molding member and the semiconductor chips, using a first blade having a first blade-width to cut away selected portions of the carrier substrate and portions of the adhesive underlying the selected portions of the carrier substrate, and using the first blade to partially cut into an upper surface of the molding member to form a first cutting groove, wherein the selected portions of the carrier substrate are dispose above portions of the molding member between adjacent ones of semiconductor chips, using a second blade having a second blade-width narrower than the first blade-width to cut through a lower surface of the molding member to form a second cutting groove, wherein a combination of the first cutting groove and the second cutting groove separate a package structure including a semiconductor chip supported by a cut portion of the carrier substrate and bonding the package structure to an upper surface of a package substrate.
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公开(公告)号:US11594283B2
公开(公告)日:2023-02-28
申请号:US17523385
申请日:2021-11-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Won-Taeck Jung , Sang-Wan Nam , Jinwoo Park , Jaeyong Jeong
IPC: G11C16/16 , G11C16/20 , G11C16/08 , G11C16/34 , G11C16/04 , G11C16/10 , H01L27/11582 , H01L27/11524 , H01L27/1157 , H01L27/11556
Abstract: A three-dimensional (3D) nonvolatile memory device includes a cell string. The cell string includes a pillar structure comprising a ground selection transistor, a plurality of memory cells, and a string selection transistor stacked vertically over a substrate. The memory cells comprise a first cell group and a second cell group stacked on the first cell group, and a horizontal width of at least a portion of the pillar structure decreases in a depth direction towards the substrate. A method of programming the memory device includes initializing a channel of a memory cell of the first cell group of the cell string through the ground selection transistor of the pillar structure, and then applying a program voltage to the memory cell of the pillar structure of the cell string.
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公开(公告)号:US11362424B2
公开(公告)日:2022-06-14
申请号:US16707315
申请日:2019-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinwoo Park , Kyujin Kwak , Jinho Lim , Dongyeon Kim , Jungsik Park , Sungjun Kim
Abstract: An electronic device is provided. The electronic device includes a housing, a plate attached to the housing to form an inner space together with the housing and includes a flat portion facing in a first direction and a curved portion extended from an edge of the flat portion and forming an obtuse angle with the first direction, and an antenna module positioned in the inner space. The antenna module includes a first partial layer, a second partial layer that includes a first antenna pattern, and is stacked on the first partial layer, and a third partial layer that includes a second antenna pattern, and is stacked on the second partial layer. When viewed from the first direction, the third partial layer overlaps at least a portion of the flat portion, and at least a portion of the second partial layer overlaps at least a portion of the curved portion.
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