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41.
公开(公告)号:US20220283345A1
公开(公告)日:2022-09-08
申请号:US17687448
申请日:2022-03-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Taekhoon KIM , Tae Gon KIM , Hyeyeon YANG , Jongmin LEE , Shin Ae JUN , Deuk Kyu MOON , A Ra JO , Jooyeon AHN , Nayoun WON , Mi Hye LIM
Abstract: A color conversion panel includes a color conversion layer including a color conversion region, and optionally, a partition wall defining the region of the color conversion layer. The color conversion region includes a first region corresponding to a green pixel, and the first region includes a first composite that is configured to emit a green light and includes a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. and at least a portion of surfaces of the luminescent nanostructures includes the second semiconductor nanocrystal. The emitted green light has a full width at half maximum of a maximum luminescent peak of less than or equal to about 42 nm.
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42.
公开(公告)号:US20220282154A1
公开(公告)日:2022-09-08
申请号:US17687543
申请日:2022-03-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jooyeon AHN , Taekhoon KIM , Deuk Kyu MOON , Jongmin LEE , Mi Hye LIM , Shin Ae JUN , Minho KIM , Yebin JUNG
IPC: C09K11/88 , G02F1/1335 , C09K11/08 , C09D11/50 , C09D11/037
Abstract: A color conversion panel that includes a color conversion layer including one or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the same. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. The luminescent nanostructures further include fluorine, and in the luminescent nanostructures, a mole ratio of fluorine to indium is greater than or equal to about 0.05:1.
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公开(公告)号:US20210366829A1
公开(公告)日:2021-11-25
申请号:US16950031
申请日:2020-11-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yewon SHIN , Jaesun YUN , Seungjun LEE , Jongmin LEE
IPC: H01L23/528 , H01L23/522 , H01L27/11582 , H01L27/11573
Abstract: A semiconductor device includes a stacked structure disposed on a substrate. The stacked structure includes a plurality of insulation layers and a plurality of electrode layers alternately stacked in a third direction intersecting with first and second directions. A plurality of channel structures extends through the stacked structure in the third direction. A first wiring group includes a plurality of first horizontal wirings disposed on the stacked structure that are arranged in the first direction and extends in the second direction. A second wiring group includes a plurality of second horizontal wirings disposed on the stacked structure that are arranged m the first direction and extends in the second direction. Each of the plurality of first and second horizontal wirings are connected to corresponding one of the plurality of channel structures. A first line identifier is disposed between the first wiring group and the second wiring group.
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公开(公告)号:US20210102120A1
公开(公告)日:2021-04-08
申请号:US17106317
申请日:2020-11-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Taekhoon KIM , Seonmyeong CHOI , Jongmin LEE , Tae Gon KIM , Young Seok PARK , Shin Ae JUN
Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.
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公开(公告)号:US20210095200A1
公开(公告)日:2021-04-01
申请号:US17120531
申请日:2020-12-14
Inventor: Jinsuop YOUN , Ha Il KWON , Misun KIM , Jooyeon AHN , Hyeyeon YANG , Bumjin LEE , Jongmin LEE , Shin Ae JUN , Hyunjoo HAN
IPC: C09K11/70 , C09K11/02 , F21V8/00 , G02F1/1335
Abstract: A photosensitive resin composition includes (A) a photo-conversion material; (B) a metal-containing compound; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent, wherein the metal-containing compound includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or TI) structure, a complex including a polymer matrix in which a photo-conversion material is dispersed, wherein the polymer matrix includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or TI) structure and an ester linking group, a laminated structure including the complex, and a display device and an electronic device including the laminated structure.
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46.
公开(公告)号:US20190136126A1
公开(公告)日:2019-05-09
申请号:US16180376
申请日:2018-11-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyeyeon YANG , Jongmin LEE , Shin Ae JUN
Abstract: A quantum dot composition comprising a quantum dot, a metal thiolate complex compound, and a solvent, wherein the metal thiolate complex compound includes a hydrophobic moiety, a thioether moiety (—S—), and a polyvalent metal, and wherein the hydrophobic moiety includes a fluorinated organic group, a multi-aromatic ring-containing group having a backbone structure that includes a quaternary carbon atom, which is a part of a cyclic group, and two aromatic rings bound to the quaternary carbon atom, or a combination thereof.
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公开(公告)号:US20180239247A1
公开(公告)日:2018-08-23
申请号:US15900554
申请日:2018-02-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ha Il KWON , Tae Gon KIM , Jongmin LEE , Shin Ae JUN
IPC: G03F7/004 , G03F7/00 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/40 , G03F7/075 , C09K11/02 , C09K11/70 , C09K11/56 , G03F7/031 , G02F1/1335
CPC classification number: G03F7/0044 , C09K11/02 , C09K11/56 , C09K11/70 , G02F1/133617 , G02F2202/36 , G03F7/0007 , G03F7/0043 , G03F7/0047 , G03F7/031 , G03F7/0752 , G03F7/0755 , G03F7/0758 , G03F7/162 , G03F7/168 , G03F7/2002 , G03F7/322 , G03F7/40
Abstract: A photosensitive composition including a quantum dot; a carboxylic acid group-containing binder; a multi-thiol compound including at least two thiol groups at its terminal ends; a photopolymerizable monomer including a carbon-carbon double bond; a metal oxide fine particle including an organic compound represented by Chemical Formula 1 or a moiety derived from the organic compound at a surface of the metal oxide fine particle; a polymeric stabilizer; a photoinitiator; and a solvent, a production method thereof, a quantum dot polymer composite prepared therefrom, and a layered structure and an electronic device including the same are disclosed: (AnSiR)4-n Chemical Formula 1 wherein n, A, and R are the same as defined in the specification.
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48.
公开(公告)号:US20180142149A1
公开(公告)日:2018-05-24
申请号:US15819556
申请日:2017-11-21
Inventor: Jinsuop YOUN , Ha Il KWON , Misun KIM , Jooyeon AHN , Hyeyeon YANG , Bumjin LEE , Jongmin LEE , Shin Ae JUN , Hyunjoo HAN
IPC: C09K11/70 , C09K11/02 , G02F1/1335 , F21V8/00
CPC classification number: C09K11/70 , C09K11/025 , G02B6/0053 , G02B6/0073 , G02F1/133514 , G02F1/133617 , G02F2001/133614
Abstract: A photosensitive resin composition includes (A) a photo-conversion material; (B) a metal-containing compound; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent, wherein the metal-containing compound includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure, a complex including a polymer matrix in which a photo-conversion material is dispersed, wherein the polymer matrix includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure and an ester linking group, a laminated structure including the complex, and a display device and an electronic device including the laminated structure.
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公开(公告)号:US20160163410A1
公开(公告)日:2016-06-09
申请号:US14870265
申请日:2015-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Doh Won JUNG , Hee Jung PARK , Yoon Chul SON , Yun Sung WOO , Jongmin LEE , Yong Hee CHO , Kyoung-Seok MOON , Jae-Young CHOI , Kimoon LEE
IPC: H01B1/02
CPC classification number: H01L21/02186 , B32B5/16 , B32B15/04 , B32B2307/202 , B32B2307/704 , H01B1/02 , H01L21/02172 , H01L21/02197 , H01L27/016
Abstract: An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure: (AαTi1−α)O2+δ Chemical Formula 1 wherein, in Chemical Formula 1, δ is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and α is greater than 0 and less than 1. Also, an electronic device including the electrically conductive thin film.
Abstract translation: 一种导电薄膜,包括多个纳米片,包括由化学式1表示的具有层状晶体结构的掺杂氧化钛的纳米片:(AαTi1-α)O 2 +δ化学式1其中,在化学式1中,δ大于0 A是选自Nb,Ta,V,W,Cr和Mo中的至少一种掺杂剂金属,α大于0且小于1.另外,包括导电薄膜的电子器件。
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