LUMINESCENT NANOSTRUCURE, AND COLOR CONVERSION PANEL AND ELECTRONIC DEVICE INCLUDING THE SAME

    公开(公告)号:US20220283345A1

    公开(公告)日:2022-09-08

    申请号:US17687448

    申请日:2022-03-04

    Abstract: A color conversion panel includes a color conversion layer including a color conversion region, and optionally, a partition wall defining the region of the color conversion layer. The color conversion region includes a first region corresponding to a green pixel, and the first region includes a first composite that is configured to emit a green light and includes a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. and at least a portion of surfaces of the luminescent nanostructures includes the second semiconductor nanocrystal. The emitted green light has a full width at half maximum of a maximum luminescent peak of less than or equal to about 42 nm.

    LUMINESCENT NANOSTRUCURE, AND COLOR CONVERSION PANEL AND ELECTRONIC DEVICE INCLUDING THE SAME

    公开(公告)号:US20220282154A1

    公开(公告)日:2022-09-08

    申请号:US17687543

    申请日:2022-03-04

    Abstract: A color conversion panel that includes a color conversion layer including one or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the same. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. The luminescent nanostructures further include fluorine, and in the luminescent nanostructures, a mole ratio of fluorine to indium is greater than or equal to about 0.05:1.

    SEMICONDUCTOR DEVICES INCLUDING LINE IDENTIFIER

    公开(公告)号:US20210366829A1

    公开(公告)日:2021-11-25

    申请号:US16950031

    申请日:2020-11-17

    Abstract: A semiconductor device includes a stacked structure disposed on a substrate. The stacked structure includes a plurality of insulation layers and a plurality of electrode layers alternately stacked in a third direction intersecting with first and second directions. A plurality of channel structures extends through the stacked structure in the third direction. A first wiring group includes a plurality of first horizontal wirings disposed on the stacked structure that are arranged in the first direction and extends in the second direction. A second wiring group includes a plurality of second horizontal wirings disposed on the stacked structure that are arranged m the first direction and extends in the second direction. Each of the plurality of first and second horizontal wirings are connected to corresponding one of the plurality of channel structures. A first line identifier is disposed between the first wiring group and the second wiring group.

    COMPOSITION, PATTERNED FILM, AND ELECTRONIC DEVICE INCLUDING THE SAME

    公开(公告)号:US20210102120A1

    公开(公告)日:2021-04-08

    申请号:US17106317

    申请日:2020-11-30

    Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.

Patent Agency Ranking