公开(公告)号：US09475984B2

公开(公告)日：2016-10-25

申请号：US14180979

申请日：2014-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Eun Joo Jang ,  Mi Yang Kim ,  Hyung Kun Kim ,  Shin Ae Jun ,  Yong Wan Jin ,  Seong Jae Choi

IPC: H01L29/12 ,  C09K11/02 ,  B82Y10/00 ,  C09K11/56 ,  C09K11/88 ,  H01L33/06 ,  H01L33/50

CPC classification number: C09K11/025 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L29/127 ,  H01L33/06 ,  H01L33/502 ,  H01L33/507 ,  H01L33/56 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/95

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

公开(公告)号：US12189170B2

公开(公告)日：2025-01-07

申请号：US17576895

申请日：2022-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Eun Joo Jang ,  Shin Ae Jun ,  Hyun A Kang ,  Yongwook Kim ,  Na Youn Won ,  Hyo Sook Jang

IPC: F21V8/00 ,  G02F1/1335 ,  G02F1/13357

Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65

公开(公告)号：US12161005B2

公开(公告)日：2024-12-03

申请号：US17522316

申请日：2021-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwanghee Kim ,  Hongkyu Seo ,  Won Sik Yoon ,  Oul Cho ,  Tae Hyung Kim ,  Jaeyong Lee ,  Eun Joo Jang

IPC: H01L51/50 ,  H10K50/11 ,  H10K50/115 ,  H10K71/12 ,  H10K85/40 ,  H10K101/30 ,  H10K101/40

Abstract: A light emitting device including a first electrode and a second electrode each having a surface opposite the other, a light emitting layer disposed between the first electrode and the second electrode, and an electronic auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles and an orthosilicate compound.

公开(公告)号：US12146086B2

公开(公告)日：2024-11-19

申请号：US18310830

申请日：2023-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Eun Joo Jang

IPC: C09K11/02 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/62 ,  C09K11/88 ,  G02F1/1335 ,  G02F1/13357 ,  H10K50/115

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same. The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

公开(公告)号：US12060510B2

公开(公告)日：2024-08-13

申请号：US18301357

申请日：2023-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Hyun A Kang ,  Eun Joo Jang ,  Dae Young Chung

IPC: H10K50/15 ,  C09K11/70 ,  H10K50/16 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115 ,  H10K102/00

CPC classification number: C09K11/703 ,  H10K50/15 ,  H10K50/16 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115 ,  H10K2102/00 ,  H10K2102/331

Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

公开(公告)号：US12041802B2

公开(公告)日：2024-07-16

申请号：US18101603

申请日：2023-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: H10K50/115

CPC classification number: H10K50/115

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

公开(公告)号：US11987739B2

公开(公告)日：2024-05-21

申请号：US18318053

申请日：2023-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong Kim ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Jihyun Min ,  Sungwoo Hwang ,  Eun Joo Jang

IPC: C09K11/88 ,  C01G9/00 ,  C01G9/08 ,  C09K11/06 ,  C09K11/54 ,  C09K11/56 ,  G02F1/13357 ,  H10K59/38 ,  F21V8/00 ,  G02F1/1335

CPC classification number: C09K11/883 ,  C01G9/006 ,  C01G9/08 ,  C09K11/06 ,  C09K11/54 ,  C09K11/565 ,  G02F1/133621 ,  H10K59/38 ,  C01P2004/64 ,  C01P2004/90 ,  C01P2006/60 ,  G02B6/005 ,  G02F1/133614 ,  G02F2202/36

Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

公开(公告)号：US11981852B2

公开(公告)日：2024-05-14

申请号：US18113650

申请日：2023-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Sung Woo Kim ,  Jin A Kim ,  Jeong Hee Lee ,  Tae Hyung Kim ,  Eun Joo Jang

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/02 ,  H05B33/14 ,  H10K50/115 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17

CPC classification number: C09K11/883 ,  C09K11/02 ,  H05B33/14 ,  H10K50/115 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/171 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US11981850B2

公开(公告)日：2024-05-14

申请号：US17991903

申请日：2022-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang ,  Heejae Chung ,  Oul Cho

IPC: C09K11/88 ,  C09K11/08 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/0883 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

公开(公告)号：US11963376B2

公开(公告)日：2024-04-16

申请号：US17944394

申请日：2022-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Ho Kim ,  Won Sik Yoon ,  Jeong Hee Lee ,  Eun Joo Jang ,  Oul Cho

IPC: H10K50/115 ,  H10K50/81 ,  H10K50/84 ,  H10K59/00 ,  H10K71/00 ,  H10K102/10

CPC classification number: H10K50/115 ,  H10K50/81 ,  H10K50/84 ,  H10K71/00 ,  H10K59/00 ,  H10K2102/103

Abstract: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.