公开(公告)号：US20130140559A1

公开(公告)日：2013-06-06

申请号：US13751189

申请日：2013-01-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO. , LTD.

Inventor： Shunpei Yamazaki ,  Hiroki Ohara ,  Toshinari Sasaki ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L29/51 ,  H01L29/786

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136227 ,  G02F1/136277 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/24 ,  H01L29/517 ,  H01L29/78609 ,  H01L29/7869

Abstract: An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

Abstract translation: 目的在于提供一种半导体器件，其具有可以充分降低布线之间的寄生电容的结构。 用作沟道保护层的氧化物绝缘层形成在与栅电极层重叠的氧化物半导体层的一部分上。 在与氧化物绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的周边部分的氧化物绝缘层。 设置覆盖氧化物半导体层的周边部分的氧化物绝缘层以增加栅极电极层与形成在栅电极层的上方或周围的布线层之间的距离，从而降低寄生电容。

公开(公告)号：US11855194B2

公开(公告)日：2023-12-26

申请号：US17500149

申请日：2021-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Miyuki Hosoba ,  Kosei Noda ,  Hiroki Ohara ,  Toshinari Sasaki ,  Junichiro Sakata

IPC: H01L29/786 ,  H01L21/477 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/477 ,  H01L29/7869 ,  H01L27/1225

Abstract: A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

公开(公告)号：US11456187B2

公开(公告)日：2022-09-27

申请号：US16919156

申请日：2020-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC: H01L21/00 ,  H01L29/00 ,  H01L21/465 ,  H01L29/04 ,  H01L29/786 ,  H01L21/28 ,  H01L21/324 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：US20210328186A1

公开(公告)日：2021-10-21

申请号：US17360151

申请日：2021-06-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC: H01L51/52 ,  G09G3/3291 ,  H01L27/32 ,  H01L51/50

Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US11063236B2

公开(公告)日：2021-07-13

申请号：US15473711

申请日：2017-03-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC: H01L51/52 ,  G09G3/3291 ,  H01L27/32 ,  H01L51/50 ,  G02F1/1362

Abstract: There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US10916663B2

公开(公告)日：2021-02-09

申请号：US16021490

申请日：2018-06-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Hiroki Ohara ,  Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka ,  Masahiro Takahashi ,  Akiharu Miyanaga

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/24

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

公开(公告)号：US10854638B2

公开(公告)日：2020-12-01

申请号：US16546469

申请日：2019-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroki Ohara ,  Toshinari Sasaki ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L27/00 ,  H01L29/00 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1368 ,  H01L29/24

Abstract: An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

公开(公告)号：US10332996B2

公开(公告)日：2019-06-25

申请号：US14958066

申请日：2015-12-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/49 ,  H01L21/28 ,  H01L21/324 ,  H01L29/66

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：US10109500B2

公开(公告)日：2018-10-23

申请号：US15664383

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC: H01L21/465 ,  H01L29/66 ,  H01L21/28 ,  H01L29/04 ,  H01L29/786 ,  H01L21/02 ,  H01L21/477

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：US09576795B2

公开(公告)日：2017-02-21

申请号：US14819664

申请日：2015-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/46 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/477 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/383 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

Abstract translation: 本发明的目的是制造具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中，进行热处理（脱水或脱氢）以提高氧化物半导体膜的纯度 并减少杂质，包括水分等。 之后，在氧气氛下进行缓慢冷却。 除了在氧化物半导体膜中排出的含有水分等的杂质以外，热处理会导致在栅极绝缘层中退出的杂质，包括氧化物半导体膜和膜之间的界面中的杂质，氧化物半导体膜和氧化物之间和之下的界面 半导体并与其接触。