-
41.发明授权Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate 有权表面处理液，表面处理方法，疏水化方法和疏水化底物公开(公告)号：US09244358B2
公开(公告)日：2016-01-26
申请号：US13123341
申请日：2009-09-15
申请人： Jun Koshiyama , Kazumasa Wakiya
发明人： Jun Koshiyama , Kazumasa Wakiya
CPC分类号： G03F7/405 , C09K3/18 , G03F7/16 , G03F7/2041 , H01L21/306 , H01L23/296 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a surface treatment liquid which enables simple and efficient hydrophobilization of a substrate and prevention of collapse of a resin pattern or etched pattern. Also disclosed are a surface treatment method using the surface treatment liquid, a hydrophobilization method using the surface treatment liquid, and a hydrophobilized substrate. When a substrate is hydrophobilized, the substrate is coated with a surface treatment liquid containing a silylating agent and a hydrocarbon non-polar solvent. When a pattern is prevented from collapse, the surface of a resin pattern formed on a substrate or etched pattern formed on a substrate by etching is treated using a surface treatment liquid containing a silylating agent and a solvent.
摘要翻译： 公开了一种表面处理液体，其能够简单且有效地对基材进行疏水化，并防止树脂图案或蚀刻图案的塌陷。 还公开了使用表面处理液的表面处理方法，使用表面处理液的疏水化方法和疏水化基材。 当底物被疏水化时，用含有甲硅烷基化剂和烃类非极性溶剂的表面处理液涂覆基材。 当防止图案塌陷时，通过使用含有甲硅烷基化剂和溶剂的表面处理液对通过蚀刻形成在基板上形成的树脂图案的表面或蚀刻图案进行处理。
-
42.发明授权公开(公告)号：US08367312B2
公开(公告)日：2013-02-05
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译： 含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。 然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。 提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。 这种洗涤剂即使在低浓度时也保持低的表面张力。 有效抑制图形下降和缺陷发生。 它也可以抑制抗蚀剂图案的波动。
-
公开(公告)号：US20100035177A1
公开(公告)日：2010-02-11
申请号：US12443118
申请日：2007-09-13
申请人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
发明人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , H01L21/0337 , H01L21/0338 , Y10S430/128
摘要： A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film (2) is formed by applying a first chemically amplified resist composition on support (1), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (3). Next, on the surface of the first resist patterns (3) are formed multiple coating patterns (5) by forming coating films (4) constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support (1) having the coating pattern (5) formed thereon to form second resist film (6), which is selectively exposed and developed to form multiple second resist patterns (7). Accordingly, a pattern including the coating patterns (5) and the second resist patterns (7) is formed on the support (1).
摘要翻译： 提供一种用于形成能够减少双重图案化工艺中的台阶数的图案的新颖方法和用于形成图案的方法中适当使用的涂膜形成材料。 通过在支撑体（1）上涂覆第一化学放大抗蚀剂组合物形成第一抗蚀剂膜（2），从而形成膜被选择性地曝光并显影以形成多个第一抗蚀剂图案（3）。 接下来，通过分别形成由水溶性树脂膜构成的涂膜（4），在第一抗蚀剂图案（3）的表面上形成多个涂布图案（5）。 此外，在其上形成有涂层图案（5）的支撑体（1）上施加第二化学放大抗蚀剂组合物以形成第二抗蚀剂膜（6），其被选择性地暴露和显影以形成多个第二抗蚀剂图案（7）。 因此，在支撑体（1）上形成包括涂布图案（5）和第二抗蚀图案（7）的图案。
-
44.发明授权Material for forming resist protecting film for use in liquid immersion lithography process, composite film, and method for forming resist pattern 有权用于在液浸光刻工艺中使用的用于形成抗蚀剂保护膜的材料，复合膜和形成抗蚀剂图案的方法公开(公告)号：US07371510B2
公开(公告)日：2008-05-13
申请号：US11702602
申请日：2007-02-06
申请人： Taku Hirayama , Ryoichi Takasu , Mitsuru Sato , Kazumasa Wakiya , Masaaki Yoshida , Koki Tamura
发明人： Taku Hirayama , Ryoichi Takasu , Mitsuru Sato , Kazumasa Wakiya , Masaaki Yoshida , Koki Tamura
CPC分类号： G03F7/2041 , G03F7/11
摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.
摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。
-
45.发明申请公开(公告)号：US20080096141A1
公开(公告)日：2008-04-24
申请号：US11791723
申请日：2005-11-29
CPC分类号： G03F7/40
摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.
摘要翻译： 本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力 抑制图案收缩。 此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。 用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8至20个碳原子的烷基或羟烷基; R 2和R 3代表具有1至5个碳原子的烷基或羟烷基。
-
46.发明申请Immersion Liquid for Liquid Immersion Lithography Process and Method for Forming Resist Pattern Using Such Immersion Liquid 审中-公开用于液体浸渍光刻工艺的浸液和使用这种浸液形成抗蚀剂图案的方法公开(公告)号：US20070269751A1
公开(公告)日：2007-11-22
申请号：US11661871
申请日：2005-08-18
申请人： Kazumasa Wakiya
发明人： Kazumasa Wakiya
IPC分类号： H01L21/027 , G03F7/20 , G03F7/38
CPC分类号： G03F7/2041 , G03F7/11
摘要： The formation of a resist pattern with high resolution using liquid immersion lithography, while concurrently preventing deterioration of the resist film during the liquid immersion lithography and deterioration of the used liquid itself, is possible through the use of a liquid which can be suitably used in a liquid lithography process in which the above resist film is exposed while being intervened by a liquid having a predetermined thickness and refractive index higher than air on at least a resist film on a route of allowing lithographic exposure light to reach to the resist film, thereby improving the resolution of a resist pattern. A liquid composed of a fluorine-based solvent that has a lowered hydrogen atomic concentration and exhibits sufficient transparency for the exposure light having a wavelength of no more than 200 nm employed in the exposure process, and that has a boiling point of 70 to 270° C., is used as an immersion liquid in liquid immersion lithography.
摘要翻译： 使用液浸光刻法形成具有高分辨率的抗蚀剂图案，同时防止液浸光刻中的抗蚀剂膜的劣化和废液本身的劣化，可以通过使用可适用于 在允许光刻曝光光到达抗蚀剂膜的路线上，至少在抗蚀剂膜上具有预定厚度和比空气高的折射率的液体进行介质曝光的上述抗蚀剂膜的液晶光刻工艺，从而改善 抗蚀剂图案的分辨率。 由曝光工序中使用的具有不超过200nm的波长的曝光用光，氢原子浓度降低且具有足够透明度的氟系溶剂构成的液体，沸点为70〜270℃ C.在液浸光刻中用作浸液。
-
47.发明申请公开(公告)号：US20060258809A1
公开(公告)日：2006-11-16
申请号：US11487330
申请日：2006-07-17
CPC分类号： G03F7/40 , G03F7/0035
摘要： It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a copolymer or a mixture of polyvinyl alcohol with a water-soluble polymer other than polyvinyl alcohol. Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can effectively increase the shrinkage amount (the amount of heat shrinking) of the agent, thereby achieving a remarkably improved effect of forming or defining fine-line patterns and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.
-
48.发明申请Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method 审中-公开浸渍曝光工艺 - 使用抗蚀剂保护膜形成材料，复合膜和抗蚀剂图案形成方法公开(公告)号：US20060141400A1
公开(公告)日：2006-06-29
申请号：US10546358
申请日：2004-02-20
申请人： Taku Hirayama , Ryoichi Takasu , Mitsuru Sato , Kazumasa Wakiya , Masaaki Yoshida , Koki Tamura
发明人： Taku Hirayama , Ryoichi Takasu , Mitsuru Sato , Kazumasa Wakiya , Masaaki Yoshida , Koki Tamura
IPC分类号： G03F7/00
CPC分类号： G03F7/2041 , G03F7/11
摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.
摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。
-
49.发明授权公开(公告)号：US06261745B1
公开(公告)日：2001-07-17
申请号：US09323988
申请日：1999-06-02
IPC分类号： G03F740
CPC分类号： H01L21/02071 , G03F7/425 , G03F7/427 , H01L21/02052 , H01L21/31116 , H01L21/31138
摘要： Disclosed herein is a post-ashing treating liquid composition comprising a salt of hydrofluoric acid with a base free from metal ions, a water-soluble organic solvent, water, and an acetylene alcohol/alkylene oxide adduct. Disclosed also herein is a process for treatment with said treating liquid composition. For removal of resist residues such as modified photoresist films and metal depositions, the treating liquid composition and the treating process can be advantageously applied to the substrates having been dry-etched, followed by ashing under severe conditions, without corrosion on metal layers and damage to an organic SOG layer formed thereon.
摘要翻译： 本文公开了一种后灰化处理液体组合物，其包含氢氟酸盐与不含金属离子的碱，水溶性有机溶剂，水和乙炔醇/烯化氧加合物。 本文还公开了用所述处理液组合物进行处理的方法。 为了除去抗蚀剂残留物如改性光致抗蚀剂膜和金属沉积物，处理液组合物和处理方法可以有利地应用于已经被干法蚀刻的基底上，随后在苛刻条件下灰化，而不会对金属层产生腐蚀和损坏 在其上形成有机SOG层。
-
公开(公告)号：US6132928A
公开(公告)日：2000-10-17
申请号：US148997
申请日：1998-09-08
CPC分类号： G03F7/091 , Y10S430/106 , Y10S430/121
摘要： A coating solution for forming an antireflective coating film making it possible to form a uniform coating film, which sustains an antireflective effect and shows no unevenness of coating or little surface discontinuity, even in a small application dose and thus ensuring the production of semiconductor devices at a low cost and a high efficiency. The coating solution for forming an antireflective coating film is one to be used for forming an anti-interference film on a resist film, characterized in that the coating solution gives a contact angle to the resist film of 15.degree. or below, when applied onto the resist film.
摘要翻译： 一种用于形成抗反射涂膜的涂布溶液，使得可以形成均匀的涂膜，即使在小的涂布剂量下也能保持抗反射效果，并且不显示涂层不均匀或少量的表面不连续性，从而确保半导体器件的生产 成本低，效率高。 用于形成抗反射涂膜的涂布溶液是用于在抗蚀剂膜上形成抗干扰膜的涂布溶液，其特征在于，当涂布在抗蚀剂膜上时，涂布溶液与抗蚀剂膜接触角为15°或更低 抗拒膜。
-
-
-
-
-
-
-
-
-
搜索结果
94 条记录 (耗时 0.031 秒)
