公开(公告)号：US5510565A

公开(公告)日：1996-04-23

申请号：US360428

申请日：1994-12-21

Applicant: Shoji Tan ,  Yukimasa Shigemura ,  Shinji Abe ,  Junichi Narita

Inventor： Shoji Tan ,  Yukimasa Shigemura ,  Shinji Abe ,  Junichi Narita

IPC: B01D15/00 ,  C10G25/00 ,  C10G53/08 ,  C07C7/12

CPC classification number: C10G53/08 ,  C10G25/003

Abstract: Mercury is removed from a liquid hydrocarbon fraction by effecting high-temperature heat treatment to convert an organic mercury compound into an inorganic mercury compound or elemental mercury, removing a higher molecular weight component from the fraction, removing water from the fraction, and thereafter contacting the fraction with an adsorbent in the form of active carbon having calcium or a calcium compound supported thereon. Although only a minor amount of mercury is contained in the liquid hydrocarbon fraction, mercury can be efficiently removed at low cost on an industrial large scale, achieving an extremely low mercury concentration.

Abstract translation: 通过进行高温热处理将有机汞化合物转化为无机汞化合物或元素汞，从馏分中除去较高分子量的组分，从馏分中除去水，然后将其与 具有活性炭形式的吸附剂，其上具有钙或钙化合物。 尽管在液体烃馏分中仅含有少量的汞，但工业上大规模地可以以低成本有效地去除汞，从而达到非常低的汞浓度。

公开(公告)号：US4337733A

公开(公告)日：1982-07-06

申请号：US256746

申请日：1981-04-23

Applicant: Makizo Hirata ,  Shinji Abe

Inventor： Makizo Hirata ,  Shinji Abe

IPC: F01P7/14 ,  F01P7/16

CPC classification number: F01P7/167 ,  F01P2007/146

Abstract: A cooling liquid temperature control system for an internal combustion engine cooled by a cooling liquid which in turn is cooled by a heat exchanger, wherein a primary bypass opened and closed by a low operating temperature thermostat valve and a secondary bypass opened and closed by a control valve are branched from a cooling liquid outlet passage connected between an engine jacket and the heat exchanger. The control valve can be opened depending on the degree of the opening of the throttle valve. The secondary bypass is branched from the cooling liquid outlet passage. The two passages are respectively opened and closed by a high operating temperature thermostat valve. The secondary bypass is communicated with the primary bypass and the other passage communicated with the heat exchanger. During normal engine operation with small throttle opening, the cooling liquid flows from the secondary bypass to the primary bypass through one passage, to be returned to the engine jacket while being kept at high temperature. At large throttle opening range, the cooling liquid flows to the heat exchanger through the other passage while the secondary bypass is closed, and has its temperature reduced before being returned to the engine jacket.

Abstract translation: 一种用于由冷却液体冷却的内燃机的冷却液体温度控制系统，冷却液体又由一个热交换器冷却，其中一个初级旁通通过一个低温运转温度恒温阀和一个由控制器打开和关闭的次要旁路打开和关闭 阀从连接在发动机护套和热交换器之间的冷却液出口通道分支。 控制阀可以根据节流阀的开度而打开。 次级旁路从冷却液出口通道分支。 两个通道分别由高工作温度恒温阀打开和关闭。 次级旁路与主旁路连通，另一通道与热交换器连通。 在具有小节气门开度的正常发动机操作期间，冷却液体通过一个通道从次级旁路流到初级旁路，在保持高温的同时返回到发动机护套。 在大的节气门开度范围内，冷却液通过另一通道流到热交换器，而次级旁路关闭，并且在返回到发动机护套之前其温度降低。

公开(公告)号：US08322879B2

公开(公告)日：2012-12-04

申请号：US12753136

申请日：2010-04-02

Applicant: Shinji Abe

Inventor： Shinji Abe

IPC: F21V9/00 ,  H01S5/00 ,  H01L23/48

CPC classification number: H01S5/4025 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/02252 ,  H01S5/4087 ,  H01L2924/00014

Abstract: A multi-wavelength semiconductor laser device includes a plate stem; a prism shaped submount with a bottom face on a face of the stem; laser diodes having emission wavelengths different from each other are mounted on lateral sides of the submount so that their respective emission points are positioned at substantially the same distance from a center axis of the stem; and lead pins penetrating the stem are located along and opposite edge lines between adjacent pairs of the lateral sides of the submount.

Abstract translation: 多波长半导体激光装置包括板杆; 棱柱形底座，其在所述杆的表面上具有底面; 具有彼此不同的发射波长的激光二极管安装在基座的侧面上，使得它们各自的发射点位于与杆的中心轴线基本相同的距离处; 并且贯穿杆的引导销沿着相邻的副安装座侧对之间的边缘线定位。

公开(公告)号：US08262940B2

公开(公告)日：2012-09-11

申请号：US12738017

申请日：2008-10-21

Applicant: Shinji Abe

Inventor： Shinji Abe

IPC: H01B1/00

CPC classification number: H05K3/323 ,  C08K3/017 ,  C08K9/02 ,  C09J9/02 ,  C09J11/04 ,  H01B1/22 ,  H01R4/04 ,  H05K2201/0209 ,  H05K2201/0221 ,  H05K2201/0224 ,  Y10T428/2991

Abstract: The present invention provides a coated conductive powder in which the aggregation of conductive particles is suppressed and which is also excellent in electrical reliability, and a conductive adhesive using the same that can provide connection with high electrical reliability even for the connection of the electrodes of miniaturized electronic parts, such as IC chips, and circuit boards. The coated conductive powder of the present invention is a coated conductive powder obtained by coating the surfaces of conductive particles with insulating inorganic fine particles, wherein the volume resistivity value of the coated conductive powder is 1 Ω·cm or less, the specific gravity of the insulating inorganic fine particles is 5.0 g/ml or less, the particle diameter ratio of the insulating inorganic fine particles to the conductive particles (the insulating inorganic fine particles/the conductive particles) is 1/100 or less, and the insulating inorganic fine particles adhere to the surfaces of the conductive particles.

Abstract translation: 本发明提供了一种涂覆的导电粉末，其中导电颗粒的聚集被抑制并且电可靠性也优异，并且使用该导电粘合剂可以提供甚至连接小型化的电极的高电气可靠性的导电粘合剂 电子部件，如IC芯片和电路板。 本发明的涂覆导电粉末是通过用绝缘无机细颗粒涂覆导电颗粒的表面而获得的涂覆导电粉末，其中涂覆的导电粉末的体积电阻率值为1＆OHgr·cm以下，比重为 绝缘性无机微粒为5.0g / ml以下，绝缘性无机微粒与导电性粒子（绝缘性无机微粒/导电性粒子）的粒径比为1/100以下，绝缘性无机质 颗粒附着在导电颗粒的表面上。

公开(公告)号：US08238397B2

公开(公告)日：2012-08-07

申请号：US12782837

申请日：2010-05-19

Applicant: Kimio Shigihara ,  Akihito Ono ,  Shinji Abe

Inventor： Kimio Shigihara ,  Akihito Ono ,  Shinji Abe

IPC: H01S5/00

CPC classification number: H01S5/2231 ,  H01S5/0206 ,  H01S5/2022 ,  H01S5/2063 ,  H01S5/305 ,  H01S5/3211 ,  H01S2301/02

Abstract: A semiconductor laser device can suppress electrode-to-electrode resonance of laser light emitted from an active layer, increasing electrical conversion efficiency. The semiconductor laser device has a substrate and an active layer. The energy of the laser light emitted from the active layer is smaller than the band gap energy of the substrate, and the carrier concentration of the substrate is at least 2.2×1018 cm−3.

Abstract translation: 半导体激光器件可以抑制从有源层发射的激光的电极到电极的共振，从而提高电转换效率。 半导体激光器件具有衬底和有源层。 从有源层发射的激光的能量小于衬底的带隙能量，衬底的载流子浓度至少为2.2×10 18 cm -3。

公开(公告)号：US07964424B2

公开(公告)日：2011-06-21

申请号：US12264976

申请日：2008-11-05

Applicant: Kyozo Kanamoto ,  Katsuomi Shiozawa ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

Inventor： Kyozo Kanamoto ,  Katsuomi Shiozawa ,  Kazushige Kawasaki ,  Shinji Abe ,  Hitoshi Sakuma

IPC: H01L21/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0021 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

Abstract: A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.

Abstract translation: 一种氮化物半导体发光元件的制造方法，其特征在于，在基板上层叠有n型氮化物半导体外延层，有源层和p型氮化物半导体外延层的半导体层叠结构体， 在p型氮化物半导体外延层上形成具有含有Pd的第一电极层和含有Ta的第二电极层的p型电极; 在形成p型电极之后，在含有氧的环境中，在400℃和600℃之间的温度下进行热处理; 在热处理后，在p型电极上形成含有Au的焊盘电极。

公开(公告)号：US20110128986A1

公开(公告)日：2011-06-02

申请号：US12782837

申请日：2010-05-19

Applicant: Kimio Shigihara ,  Akihito Ono ,  Shinji Abe

Inventor： Kimio Shigihara ,  Akihito Ono ,  Shinji Abe

IPC: H01S5/00

CPC classification number: H01S5/2231 ,  H01S5/0206 ,  H01S5/2022 ,  H01S5/2063 ,  H01S5/305 ,  H01S5/3211 ,  H01S2301/02

Abstract: A semiconductor laser device can suppress electrode-to-electrode resonance of laser light emitted from an active layer, increasing electrical conversion efficiency. The semiconductor laser device has a substrate and an active layer. The energy of the laser light emitted from the active layer is smaller than the band gap energy of the substrate, and the carrier concentration of the substrate is at least 2.2×1018 cm−3.

Abstract translation: 半导体激光器件可以抑制从有源层发射的激光的电极到电极的共振，从而提高电转换效率。 半导体激光器件具有衬底和有源层。 从有源层发射的激光的能量小于衬底的带隙能量，衬底的载流子浓度至少为2.2×10 18 cm -3。

公开(公告)号：US07901966B2

公开(公告)日：2011-03-08

申请号：US12534925

申请日：2009-08-04

Applicant: Shinji Abe ,  Kazushige Kawasaki

Inventor： Shinji Abe ,  Kazushige Kawasaki

IPC: H01L21/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/3211 ,  H01S5/34333 ,  Y10S117/915

Abstract: A method for manufacturing a nitride semiconductor device, comprises: epitaxially growing a semiconductor layer of a GaN-based material on the Ga surface of a GaN substrate while the GaN substrate is mounted on a substrate holder the substrate warping during the epitaxial growth so that a epitaxial deposit is deposited on the N surface of the substrate; and subjecting the N surface of the GaN substrate to vacuum suction after the epitaxial growth of the semiconductor layer; removing the epitaxial deposit from the N side of the GaN substrate after the semiconductor layer has been epitaxially grown, and before the N surface of the n-type GaN substrate is subjected to vacuum suction.

Abstract translation: 一种用于制造氮化物半导体器件的方法，包括：在GaN衬底的Ga表面上外延生长GaN基材料的半导体层，同时将GaN衬底在外延生长期间将基板安装在衬底翘曲上，使得 外延沉积沉积在衬底的N表面上; 以及在半导体层的外延生长之后对GaN衬底的N表面进行真空吸附; 在半导体层已经外延生长之后，并且在n型GaN衬底的N表面经受真空抽吸之前，从GaN衬底的N侧除去外延沉积物。

公开(公告)号：US07718454B2

公开(公告)日：2010-05-18

申请号：US12029510

申请日：2008-02-12

Applicant: Hitoshi Nakamura ,  Shinji Abe ,  Harumi Nishiguchi

Inventor： Hitoshi Nakamura ,  Shinji Abe ,  Harumi Nishiguchi

IPC: H01L21/00

CPC classification number: H01S5/0201 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L2223/54453 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01079 ,  H01L2924/1033 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/32341 ,  H01L2924/00014

Abstract: A method of manufacturing semiconductor laser device including a GaN wafer includes forming a semiconductor layer on the GaN wafer and on which ridge portions are formed. Grooves are formed in the semiconductor layer such that each groove is disposed in line with the scribe marks, between each of the ridge portions and an upstream scribe mark. The grooves are curved and convex outwardly towards a downstream side, and each groove has an apex on a cleavage line. The side extending from the apex preferably does not form an angle of 60 degrees with respect to a cleavage direction or the cleavage line.

Abstract translation: 制造包括GaN晶片的半导体激光器件的方法包括在GaN晶片上形成半导体层并形成脊部。 在半导体层中形成凹槽，使得每个凹槽与每个脊部之间的刻划线和上游划线标记配置。 凹槽向下游侧弯曲并向外凸出，并且每个凹槽在切割线上具有顶点。 从顶点延伸的一侧优选不相对于切割方向或切割线形成60度的角度。

公开(公告)号：US07472205B2

公开(公告)日：2008-12-30

申请号：US10417146

申请日：2003-04-17

Applicant: Shinji Abe

Inventor： Shinji Abe

IPC: G06F13/28

CPC classification number: H04L29/06 ,  H04L69/16 ,  H04L69/163

Abstract: A communication controller of the present invention includes a descriptor cache mechanism which makes a virtual descriptor gather list from the descriptor indicted from a host, and which allows a processor to refer to a portion of the virtual descriptor gather list in a descriptor cache window. Another communication controller of the present invention includes a second processor which allocates any communication process related with a first communication unit of the communication processes to the first one of a first processors and any communication process related with a second communication unit of the communication processes to the second one of the first processors. Another communication controller includes a first memory which stores control information. The first memory includes a first area accessed by the associated one of processors to refer to the control information and a second area which stores the control information during the access.

Abstract translation: 本发明的通信控制器包括描述符高速缓存机制，该描述符缓存机制根据从主机指示的描述符形成虚拟描述符收集列表，并且允许处理器在描述符高速缓存窗口中引用虚拟描述符收集列表的一部分。 本发明的另一通信控制器包括：第二处理器，其将与通信处理的第一通信单元相关的任何通信处理分配给第一处理器中的第一处理器和与通信处理的第二通信单元相关的任何通信处理， 第二个处理器之一。 另一通信控制器包括存储控制信息的第一存储器。 第一存储器包括由关联的一个处理器访问以引用控制信息的第一区域和在访问期间存储控制信息的第二区域。