公开(公告)号：US06684378B2

公开(公告)日：2004-01-27

申请号：US10012731

申请日：2001-11-05

申请人： Akira Yamamoto ,  Shirou Sakiyama ,  Hiroyuki Nakahira ,  Masayoshi Kinoshita ,  Katsuji Satomi ,  Jun Kajiwara ,  Shinichi Yamamoto

发明人： Akira Yamamoto ,  Shirou Sakiyama ,  Hiroyuki Nakahira ,  Masayoshi Kinoshita ,  Katsuji Satomi ,  Jun Kajiwara ,  Shinichi Yamamoto

IPC分类号： G06F1750

CPC分类号： G06F17/50 ,  G06F2217/78 ,  H01L27/088 ,  H01L27/11807 ,  H01L2224/05554 ,  H01L2224/49171 ,  H02M3/1588 ,  H02M7/003 ,  Y02B70/1466

摘要： A power supply circuit according to the present invention is a power supply circuit formed on a semiconductor chip, including: an output transistor section outputting a power supply voltage; and a control circuit for controlling the output transistor section. The output transistor section is arranged in the vicinity of an external input/output terminal of the semiconductor chip.

摘要翻译： 根据本发明的电源电路是形成在半导体芯片上的电源电路，包括：输出电源电压的输出晶体管部分; 以及用于控制输出晶体管部分的控制电路。 输出晶体管部分布置在半导体芯片的外部输入/输出端子附近。

公开(公告)号：US5163823A

公开(公告)日：1992-11-17

申请号：US810891

申请日：1991-12-20

申请人： Masayoshi Kinoshita ,  Jun Isono

发明人： Masayoshi Kinoshita ,  Jun Isono

IPC分类号： F04B39/12

CPC分类号： F04B39/122

摘要： A compressor includes a passage in the sidewall of the cylinder for directing compressed gas against circumferential surfaces of piston rings. The pressure of the gas from the passage counteracts the pressure of gas between the piston ring groove and the piston ring, and urges the piston rings inwardly. The force with which the piston ring is urged into engagement with the cylinder walls is lessened, thereby reducing wear of the piston rings. The arrangement is especially useful for compressors having piston rings formed of low friction polymeric materials, such as fluorine-containing polymers.

摘要翻译： 压缩机包括在气缸的侧壁中的通道，用于将压缩气体引导到活塞环的周向表面。 来自通道的气体的压力抵消了活塞环槽和活塞环之间的气体压力，并向内推动活塞环。 推动活塞环与气缸壁接合的力减小，从而减少活塞环的磨损。 该装置对于具有由诸如含氟聚合物的低摩擦聚合材料形成的活塞环的压缩机特别有用。

公开(公告)号：US5032754A

公开(公告)日：1991-07-16

申请号：US495702

申请日：1990-03-19

申请人： Naoto Iwao ,  Masayoshi Kinoshita ,  Manabu Yoshimura

发明人： Naoto Iwao ,  Masayoshi Kinoshita ,  Manabu Yoshimura

IPC分类号： H01L41/09 ,  H02N2/12

CPC分类号： H02N2/001 ,  H02N2/106

摘要： An ultrasonic motor uses a piezoelectric transducer for effectively transmitting vibration energy and achieving high output. The piezoelectric transducer comprises elastic members, first and second piezoelectric elements, electrodes, and ceramic insulators inserted between the electrodes or between the electrodes and the elastic members. The first and second piezoelectric elements excite the vibration surfaces of the elastic members to vibrate in two modes and to generate approximate elliptical vibration by synthesizing the two vibration modes. The electrodes are provided for applying alternating current signals to the first and the second piezoelectric elements. The first and second piezoelectric elements are polarized such that they cause shear vibration in the same direction. The piezoelectric transducer is fixed in a motor case via a fixing plate. A rotor is provided in such a position as to contact the vibration surface of one of the elastic members.

摘要翻译： 超声波电机使用压电换能器有效地传递振动能量并实现高输出。 压电换能器包括插入在电极之间，电极和弹性构件之间的弹性构件，第一和第二压电元件，电极和陶瓷绝缘体。 第一和第二压电元件激励弹性元件的振动表面以两种模式振动，并通过合成两种振动模式产生近似的椭圆振动。 设置电极用于向第一和第二压电元件施加交流信号。 第一和第二压电元件被极化，使得它们在相同方向上引起剪切振动。 压电换能器通过固定板固定在电动机壳体中。 转子设置在与弹性构件之一的振动面接触的位置。

公开(公告)号：US08487911B2

公开(公告)日：2013-07-16

申请号：US12000839

申请日：2007-12-18

申请人： Masayoshi Kinoshita ,  Hiroshi Kageyama

发明人： Masayoshi Kinoshita ,  Hiroshi Kageyama

IPC分类号： G06F3/042

CPC分类号： G06F3/0412

摘要： An image display apparatus with image entry function capable of high-speed and high-accuracy direct screen entry without increasing the peripheral circuit scale or the number of circuit elements for each pixel that lower the pixel aperture ratio. A first pixel circuit and a second pixel circuit are alternately arrayed horizontally. First and second data lines are connected to a data driver and a sensor signal processor circuit. Selector switches are connected to the input terminal of the data driver. Gray scale voltages are sent from the data driver to the first and second data lines, and first and second photo sensor signals are sent to the sensor signal processor circuit.

摘要翻译： 具有能够进行高速和高精度直接屏幕输入的图像输入功能的图像显示装置，而不增加用于降低像素孔径比的每个像素的外围电路规模或电路元件的数量。 第一像素电路和第二像素电路被水平地交替排列。 第一和第二数据线连接到数据驱动器和传感器信号处理器电路。 选择开关连接到数据驱动器的输入端。 灰度电压从数据驱动器发送到第一和第二数据线，并且第一和第二光电传感器信号被发送到传感器信号处理器电路。

公开(公告)号：US07999603B2

公开(公告)日：2011-08-16

申请号：US12686283

申请日：2010-01-12

申请人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

发明人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

IPC分类号： H03K3/01

CPC分类号： H03K3/011 ,  G05F3/205 ,  H03K17/145 ,  H03K19/00384 ,  H03K2217/0018

摘要： Provided is a semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation thereof. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to ground, and the substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

摘要翻译： 提供一种半导体集成电路装置，其能够控制MOSFET的衬底电压，使得亚阈值区域或饱和区域中的任意栅极电压值的漏极电流将不受温度依赖性和工艺变化依赖性的影响，从而提高稳定性 操作。 半导体集成电路装置包括：在半导体基板上具有多个MOSFET的集成电路主体; 监视器单元，用于监视所述多个MOSFET的至少一个漏极电流; 以及用于控制半导体衬底的衬底电压以保持漏极电流恒定的衬底电压调节单元。 监视器单元包括形成在与多个MOSFET相同的衬底上的恒流源和监视MOSFET，衬底电压调节单元包括比较单元，用于将监视MOSFET的源极电位与预定参考电位进行比较，漏极端子 的监视MOSFET和连接到地的多个MOSFET的漏极端子，并且基板电压调节单元基于比较单元的比较结果将监视MOSFET的衬底电压的输出电压输出反馈。

公开(公告)号：US20080303022A1

公开(公告)日：2008-12-11

申请号：US12071704

申请日：2008-02-25

申请人： Mitsuharu Tai ,  Masayoshi Kinoshita

发明人： Mitsuharu Tai ,  Masayoshi Kinoshita

IPC分类号： H01L31/0376

CPC分类号： H01L31/03762 ,  H01L27/14609 ,  H01L27/14676 ,  H01L27/14692 ,  H01L31/115 ,  Y02E10/548

摘要： A highly sensitive optical sensor element, and a switch element such as a sensor driver circuit are formed on the same insulating substrate by using an LTPS planar process to provide a low cost area sensor (optical sensor device) incorporating the sensor driver circuit and the like or an image display device incorporating the optical sensor element. As an optical sensor element structure, one electrode of the sensor element is manufactured with the same film of the polycrystalline silicon film that is an active layer of the switch element constituting a circuit. A photoelectric conversion unit for performing photoelectric conversion is made of an amorphous silicon or a polycrystalline silicon film of an intrinsic layer. A structure in which the amorphous silicon of the photoelectric conversion unit and the insulating layer are sandwiched between two electrodes of the sensor element is adopted.

摘要翻译： 通过使用LTPS平面工艺在相同的绝缘基板上形成高灵敏度的光学传感器元件和诸如传感器驱动电路的开关元件，以提供结合有传感器驱动电路等的低成本区域传感器（光学传感器装置） 或包含光学传感器元件的图像显示装置。 作为光学传感器元件结构，传感器元件的一个电极由构成电路的开关元件的有源层的多晶硅膜相同的膜制造。 用于进行光电转换的光电转换单元由本征层的非晶硅或多晶硅膜制成。 采用其中将光电转换单元的非晶硅和绝缘层夹在传感器元件的两个电极之间的结构。

公开(公告)号：US07429887B2

公开(公告)日：2008-09-30

申请号：US11540692

申请日：2006-10-02

申请人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

发明人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

IPC分类号： H03K3/01

CPC分类号： H03K3/011 ,  G05F3/205 ,  H03K17/145 ,  H03K19/00384 ,  H03K2217/0018

摘要： Providing semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so that the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes: an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

摘要翻译： 提供能够控制MOSFET的衬底电压的半导体集成电路装置，使得亚阈值区域或饱和区域中的任意栅极电压值的漏极电流将不受温度依赖性和工艺变化依赖性的影响，从而提高了稳定的工作。 半导体集成电路装置包括：在半导体基板上具有多个MOSFET的集成电路主体; 监视器单元，用于监视所述多个MOSFET的至少一个漏极电流; 以及用于控制半导体衬底的衬底电压以保持漏极电流恒定的衬底电压调节单元。 监视器单元包括形成在与多个MOSFET相同的衬底上的恒流源和监视MOSFET，衬底电压调节单元包括比较单元，用于将监视MOSFET的源极电位与预定参考电位进行比较，漏极端子 的监视MOSFET和连接到地电位的多个MOSFET的漏极端子，并且基板电压调节单元基于比较单元的比较结果将监控MOSFET的基板电压反馈输出电压输出。

公开(公告)号：US20080198140A1

公开(公告)日：2008-08-21

申请号：US12000609

申请日：2007-12-14

申请人： Masayoshi Kinoshita ,  Hiroshi Kageyama

发明人： Masayoshi Kinoshita ,  Hiroshi Kageyama

IPC分类号： G06F3/041

CPC分类号： G06F3/042 ,  G06F3/0412

摘要： An image display apparatus with image entry function of high accuracy enabling high-speed direct screen input without decreasing a pixel aperture ratio. Data lines of thin-film transistors which do not receive light and storage lines are connected to respective selector switches. The selector switches are turned on and off by a switching signal supplied through a switching line from a control circuit. The conveyance of a drive signal and a video signal supplied from a gate line driving circuit and a data line driving circuit and the conveyance of a light signal to an X address detection circuit and a Y address detection circuit are switched by turning on and off the selector switches.

摘要翻译： 具有高精度的图像输入功能的图像显示装置，能够实现高速直接输入屏幕，而不会降低像素孔径比。 不接收光和存储线的薄膜晶体管的数据线连接到相应的选择器开关。 选择器开关由通过来自控制电路的开关线提供的开关信号导通和关断。 通过打开和关闭从栅极线驱动电路和数据线驱动电路提供的驱动信号和视频信号的传送以及将光信号传送到X地址检测电路和Y地址检测电路， 选择开关

公开(公告)号：US20080142920A1

公开(公告)日：2008-06-19

申请号：US11956551

申请日：2007-12-14

申请人： Mitsuharu Tai ,  Hideo Sato ,  Mutsuko Hatano ,  Masayoshi Kinoshita

发明人： Mitsuharu Tai ,  Hideo Sato ,  Mutsuko Hatano ,  Masayoshi Kinoshita

IPC分类号： G09G5/00 ,  H01L31/103

CPC分类号： H01L27/1214 ,  G09G2360/14 ,  H01L31/1136

摘要： According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are made of polycrystalline silicon film. As the photo-sensing element, a photo transistor is formed by using TFT, which comprises a first electrode 11 prepared on an insulating substrate 10, a photoelectric conversion region 14 and a second electrode 12, and a third electrode 13 disposed above the photoelectric conversion region 14. An impurity layer positioned closer to an intrinsic layer (density of active impurities is 1017 cm−3 or lower) is provided on the regions 15 and 16 on both sides under the third electrode 13 or on one of the regions 15 or 16 on one side.

摘要翻译： 根据本发明，通过仅使用多晶材料，通过平面法在绝缘基板上制备高灵敏度的感光元件和传感器驱动电路。 感光元件和传感器驱动电路都由多晶硅膜制成。 作为感光元件，通过使用TFT形成光电晶体管，该TFT包括在绝缘基板10上制备的第一电极11，光电转换区域14和第二电极12以及设置在光电转换器之上的第三电极13 区域14。 位于更靠近本征层的杂质层（活性杂质的密度为10 -3 -3 -3或更低）设置在两侧的区域15和16上 第三电极13或一侧的区域15或16中的一个上。

公开(公告)号：US07365590B2

公开(公告)日：2008-04-29

申请号：US11540757

申请日：2006-10-02

申请人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

发明人： Masaya Sumita ,  Shirou Sakiyama ,  Masayoshi Kinoshita

IPC分类号： H03K3/01

CPC分类号： H03K3/011 ,  G05F3/205 ,  H03K17/145 ,  H03K19/00384 ,  H03K2217/0018

摘要： A semiconductor integrated circuit apparatus capable of controlling the substrate voltage of a MOSFET so hat the drain current for an arbitrary gate voltage value in a subthreshold region or a saturated region will be free from temperature dependence and process variation dependence, thereby enhancing the stable operation. The semiconductor integrated circuit apparatus includes an integrated circuit main body having a plurality of MOSFETs on a semiconductor substrate; a monitor unit for monitoring at least one of the drain currents of the plurality of MOSFETs; and a substrate voltage regulating unit for controlling the substrate voltage of the semiconductor substrate so as to keep constant the drain current. The monitor unit includes a constant current source and a monitoring MOSFET formed on the same substrate as the plurality of MOSFETs, the substrate voltage regulating unit includes a comparison unit for comparing the source potential of the monitoring MOSFET with a predetermined reference potential with the drain terminal of the monitoring MOSFET and the drain terminals of the plurality of MOSFETs connected to the ground potential, and the substrate voltage regulating unit feeds back the output voltage output based on the comparison result by the comparison unit to the substrate voltage of the monitoring MOSFET.

摘要翻译： 能够控制MOSFET的衬底电压的半导体集成电路装置，以使得在亚阈值区域或饱和区域中的任意栅极电压值的漏极电流不受温度依赖性和工艺变化依赖性的影响，从而提高了稳定的工作。 半导体集成电路装置包括在半导体基板上具有多个MOSFET的集成电路主体; 监视器单元，用于监视所述多个MOSFET的至少一个漏极电流; 以及用于控制半导体衬底的衬底电压以保持漏极电流恒定的衬底电压调节单元。 监视器单元包括形成在与多个MOSFET相同的衬底上的恒流源和监视MOSFET，衬底电压调节单元包括比较单元，用于将监视MOSFET的源极电位与预定参考电位进行比较，漏极端子 的监视MOSFET和连接到地电位的多个MOSFET的漏极端子，并且基板电压调节单元基于比较单元的比较结果将监视MOSFET的衬底电压反馈输出电压输出。