-
公开(公告)号：US20140191345A1
公开(公告)日：2014-07-10
申请号：US14203762
申请日：2014-03-11
Applicant: Sony Corporation
Inventor： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L29/66007 , H01L29/82 , H01L43/08 , H01L43/12
Abstract: A magnetic memory with a memory layer having magnetization, the direction of magnetization of which changes according to information recorded therein; a reference layer having a fixed magnetization against which magnetization of the memory layer can be compared; a nonmagnetization layer between the memory layer and the reference layer; and an electrode on one side of the memory layer facing away from the reference layer, wherein, the memory device memorizes the information by reversal of the magnetization of the memory layer by a spin torque generated when a current flows between the memory layer, the nonmagnetization layer and the reference layer, and a heat conductivity of a center portion of the electrode is lower than a heat conductivity of surroundings thereof. The memory and reference preferably have vertical magnetizations.
Abstract translation: 具有存储层的磁存储器，其具有磁化，其磁化方向根据记录在其中的信息而变化; 具有固定磁化的参考层，可以与其比较存储层的磁化强度; 存储层和参考层之间的非磁化层; 以及存储层背离参考层的一侧上的电极，其中，所述存储器件通过在电流在存储层，非磁化之间流动时产生的自旋扭矩反转存储层的磁化来存储信息 层和参考层，并且电极的中心部分的导热率低于其周围的热导率。 存储器和参考优选地具有垂直磁化。
-
公开(公告)号：US20140042573A1
公开(公告)日：2014-02-13
申请号：US14055386
申请日：2013-10-16
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
IPC: H01L43/10
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/32 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08
Abstract: There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.
Abstract translation: 公开了一种包括层叠结构的存储元件，该结构包括具有垂直于膜面的磁化的存储层; 磁化固定层; 以及设置在存储层之间的绝缘层。 自旋极化的电子沿着分层结构的层叠方向注入，存储层接收的有效抗磁场的大小相对于存储层的饱和磁化量小于相对于绝缘层的饱和磁化量 与存储层接触，并且存储层在与绝缘层相对的一侧接触的另一侧层，至少与存储层接触的界面由氧化物膜形成，并且 除了Co-Fe-B磁性层之外，存储层还包括非磁性金属和氧化物中的至少一种。
-
公开(公告)号：US08637947B2
公开(公告)日：2014-01-28
申请号：US13684644
申请日：2012-11-26
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
CPC classification number: H01L29/82 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: A memory element includes a layered structure and a negative thermal expansion material layer. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a magnetic layer having a positive magnetostriction constant. The magnetization direction is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.
Abstract translation: 存储元件包括分层结构和负热膨胀材料层。 分层结构包括存储层，磁化固定层和中间层。 存储层具有垂直于胶片面的磁化，其中磁化方向根据信息而改变，并且包括具有正的磁致伸缩常数的磁性层。 通过在分层结构的层叠方向上施加电流来将信息记录在存储层中来改变磁化方向。 磁化固定层具有垂直于成为存储在存储层中的信息的基础的膜面的磁化。 中间层由非磁性材料形成，并且设置在存储层和磁化固定层之间。
-
公开(公告)号：US20130235872A1
公开(公告)日：2013-09-12
申请号：US13779139
申请日：2013-02-27
Applicant: SONY CORPORATION
Inventor： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC: H04L12/56
CPC classification number: H04L45/742 , H04L45/60 , H04L49/25
Abstract: A router, includes: a routing table memory unit configured to store a routing table and be capable of reading and writing the routing table at any time, the routing table being destination information of a packet; a search engine unit which has a transfer information base memory unit and which is configured to search for a destination of the packet based on a transfer information base; a power supply unit configured to supply power to the routing table memory unit and the transfer information base memory unit; and a control unit configured to control the power supply unit such that the power is supplied to the non-volatile memory when the non-volatile memory is operated, and the power supply is interrupted when the non-volatile memory is not operated.
Abstract translation: 路由器包括：路由表存储单元，被配置为存储路由表，并且能够随时读取和写入路由表，路由表是分组的目的地信息; 搜索引擎单元，其具有传送信息库存储单元，其被配置为基于传送信息库来搜索分组的目的地; 电源单元，被配置为向所述路由表存储单元和所述传送信息库存储单元供电; 以及控制单元，被配置为控制所述电源单元，使得当所述非易失性存储器被操作时，所述电力被提供给所述非易失性存储器，并且当所述非易失性存储器未被操作时所述电源被中断。
-
公开(公告)号：US20130163314A1
公开(公告)日：2013-06-27
申请号：US13675328
申请日：2012-11-13
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC: G11C11/16
CPC classification number: G11C11/161 , G11C11/15 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: A memory element includes a layered structure. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information, and the direction of the magnetization is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, has a laminated ferri-pinned structure including at least two ferromagnetic layers and a non-magnetic layer, and includes an anti-ferromagnetic oxide layer formed on any of the at least two ferromagnetic layers. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.
Abstract translation: 存储元件包括分层结构。 分层结构包括存储层，磁化固定层和中间层。 存储层具有垂直于膜面的磁化，其中磁化方向根据信息而改变，并且通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储器中 层。 磁化固定层具有垂直于成为存储在存储层中的信息的基底的膜面的磁化，具有包括至少两个铁磁层和非磁性层的叠层铁钉结构， 形成在所述至少两个铁磁层中的任一个上的铁磁性氧化物层。 中间层由非磁性材料形成，并且设置在存储层和磁化固定层之间。
-
Patent Agency Ranking
公开(公告)号：US20130134532A1
公开(公告)日：2013-05-30
申请号：US13675789
申请日：2012-11-13
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
IPC: H01L29/82
CPC classification number: H01L43/10 , G11C11/161 , H01L27/222 , H01L27/228 , H01L29/82 , H01L43/08
Abstract: A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.
Abstract translation: 存储元件包括分层结构：具有根据信息改变的磁化方向的存储层，通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储层中，该信息包括第一铁磁 层，其具有从垂直于膜面的方向倾斜的磁化方向，层压在所述第一铁磁层上的接合层和层压在所述接合层上并通过所述接合层接合到所述第一铁磁性层的第二铁磁层， 从垂直于膜面的方向倾斜的磁化方向，具有固定的磁化方向的磁化固定层，设置在存储层和磁化固定层之间的中间层，并与第一铁磁体 层和与第二铁磁体接触的盖层 c层。
-
公开(公告)号：US11502244B2
公开(公告)日：2022-11-15
申请号：US17106905
申请日：2020-11-30
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC: H01L43/00 , H01L43/08 , G11C11/16 , H01L43/10 , H01L27/22 , H01F10/32 , H01L43/02 , G11C11/56 , G11C11/02
Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.
-
公开(公告)号：US10861522B2
公开(公告)日：2020-12-08
申请号：US16426237
申请日：2019-05-30
Applicant: SONY CORPORATION
Inventor： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
Abstract: Provided is a storage device that includes a magnetization fixed layer, an intermediate layer, and a storage layer. The magnetization fixed layer has magnetization in an orientation perpendicular to a film surface and a constant magnetization direction. The intermediate layer includes a non-magnetic body and is disposed on the magnetization fixed layer. The storage layer includes an outer circumferential portion and a center portion. The storage layer is disposed to face the magnetization fixed layer with the intermediate layer sandwiched therebetween, and is configured to have a variable magnetization direction. The outer circumferential portion has magnetization in an orientation perpendicular to a film surface, the center portion is formed by being surrounded by the outer circumferential portion and having magnetization inclined from the orientation perpendicular to the film surface.
-
公开(公告)号：US10861521B2
公开(公告)日：2020-12-08
申请号：US16091732
申请日：2017-03-09
Applicant: SONY CORPORATION
Inventor： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
Abstract: A magnetic storage element includes a first magnetic layer having a magnetization easy axis in a direction perpendicular to a surface of the first magnetic layer. A first non-magnetic layer is on the first magnetic layer. A second magnetic layer is on the first non-magnetic layer and has a fixed magnetization direction. A second non-magnetic layer is on the second magnetic layer. A third magnetic layer is on the second non-magnetic layer and has a fixed magnetization direction perpendicular to a surface of the third magnetic layer. A third non-magnetic layer is on the third magnetic layer. A storage layer on the third non-magnetic layer and having a variable magnetization direction with a magnetization easy axis in a direction perpendicular to a surface of the storage layer. Change in a magnetization direction of the first magnetic layer is easier than in the storage layer.
-
50.发明授权公开(公告)号：US10706903B2
公开(公告)日：2020-07-07
申请号：US16301063
申请日：2017-04-18
Applicant: SONY CORPORATION
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Hiroyuki Uchida
Abstract: A nonvolatile memory cell includes a layered structure body formed by layering a storage layer that stores information in accordance with a magnetization direction and a magnetization fixed layer that defines a magnetization direction of the storage layer; and a heating layer that heats the magnetization fixed layer to control a magnetization direction of the magnetization fixed layer.
-
-
-
-
-
-
-
-
-
Search Results
133
records
(took 0.021 seconds)
