公开(公告)号：US08531875B2

公开(公告)日：2013-09-10

申请号：US13426139

申请日：2012-03-21

申请人： Satoshi Yanagi ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Jyunichi Ozeki ,  Hisanori Aikawa ,  Naoharu Shimomura ,  Masatoshi Yoshikawa ,  Minoru Amano ,  Shigeki Takahashi ,  Hiroaki Yoda

发明人： Satoshi Yanagi ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Jyunichi Ozeki ,  Hisanori Aikawa ,  Naoharu Shimomura ,  Masatoshi Yoshikawa ,  Minoru Amano ,  Shigeki Takahashi ,  Hiroaki Yoda

IPC分类号： H01L29/82 ,  G11C11/15

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.

摘要翻译： 根据一个实施例，磁存储器包括至少一个包括磁阻元件的存储单元以及第一和第二电极。 元件包括第一磁性层，隧道势垒层，第二磁性层和设置在第二磁性层上并且具有与第二磁性层的磁化方向反平行的磁化的第三磁性层。 第一磁性层的上表面的直径小于隧道势垒层的下表面的直径。 第二磁性层的下表面的直径不大于隧道势垒层的上表面的直径。

公开(公告)号：US20070096229A1

公开(公告)日：2007-05-03

申请号：US11551868

申请日：2006-10-23

申请人： Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Masahiko Nakayama

发明人： Masatoshi Yoshikawa ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Masahiko Nakayama

IPC分类号： H01L43/00

CPC分类号： H01L43/10 ,  G11C11/16

摘要： A magnetoresistive element includes a magnetic recording layer which records information as a magnetization direction changes upon supplying a bidirectional current in an out-of-plane direction, a magnetic reference layer which has a fixed magnetization direction, and a nonmagnetic layer which is provided between the magnetic recording layer and the magnetic reference layer. The magnetic recording layer includes an interface magnetic layer which is provided in contact with the nonmagnetic layer and has a first magnetic anisotropy energy, and a magnetic stabilizing layer which has a second magnetic anisotropy energy higher than the first magnetic anisotropy energy.

摘要翻译： 磁阻元件包括磁记录层，该磁记录层在沿面外方向提供双向电流时记录磁化方向变化的信息，具有固定的磁化方向的磁性参考层和设置在磁性方向之间的非磁性层 磁记录层和磁参考层。 磁记录层包括与非磁性层接触并具有第一磁各向异性能的界面磁性层和具有高于第一磁各向异性能的第二磁各向异性能的磁稳定层。

公开(公告)号：US09406871B2

公开(公告)日：2016-08-02

申请号：US14807267

申请日：2015-07-23

申请人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

发明人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

IPC分类号： H01L43/00 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

公开(公告)号：US09236563B2

公开(公告)日：2016-01-12

申请号：US14200894

申请日：2014-03-07

申请人： Yutaka Hashimoto ,  Tadashi Kai ,  Masahiko Nakayama ,  Hiroaki Yoda ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Yasuyuki Sonoda

发明人： Yutaka Hashimoto ,  Tadashi Kai ,  Masahiko Nakayama ,  Hiroaki Yoda ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Yasuyuki Sonoda

IPC分类号： G11C11/16 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory device includes a magnetoresistance effect element having a structure in which a first magnetic layer, a nonmagnetic layer, a second magnetic layer, and a third magnetic layer are stacked, wherein the third magnetic layer comprises a first region and a plurality of second regions, and each of the second regions is surrounded by the first region, has conductivity, and has a greater magnetic property than the first region.

摘要翻译： 根据一个实施例，磁存储器件包括具有其中堆叠第一磁性层，非磁性层，第二磁性层和第三磁性层的结构的磁阻效应元件，其中第三磁性层包括第一区域 和多个第二区域，并且每个第二区域被第一区域包围，具有导电性，并且具有比第一区域更大的磁特性。

公开(公告)号：US20090080239A1

公开(公告)日：2009-03-26

申请号：US12233121

申请日：2008-09-18

申请人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/02 ,  G11B5/706 ,  G11C11/14

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

摘要： A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.

摘要翻译： 磁阻元件包括具有垂直于膜表面的磁各向异性的第一参考层和不变磁化，具有通过交替堆叠磁性层和非磁性层而形成的堆叠结构的记录层，垂直于膜表面的磁各向异性，以及可变的 磁化，以及设置在第一参考层和记录层之间并包含非磁性材料的中间层。 磁性层包括与中间层接触的第一磁性层和不与中间层接触的第二磁性层。 第一磁性层含有含有钴（Co）和铁（Fe）的合金，其膜厚大于第二磁性层的厚度。

公开(公告)号：US08098514B2

公开(公告)日：2012-01-17

申请号：US12233121

申请日：2008-09-18

申请人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Katsuya Nishiyama ,  Tadashi Kai ,  Masahiko Nakayama ,  Makoto Nagamine ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  Y10S977/935

摘要： A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.

摘要翻译： 磁阻元件包括具有垂直于膜表面的磁各向异性的第一参考层和不变磁化，具有通过交替堆叠磁性层和非磁性层而形成的堆叠结构的记录层，垂直于膜表面的磁各向异性，以及可变的 磁化，以及设置在第一参考层和记录层之间并包含非磁性材料的中间层。 磁性层包括与中间层接触的第一磁性层和不与中间层接触的第二磁性层。 第一磁性层含有含有钴（Co）和铁（Fe）的合金，其膜厚大于第二磁性层的厚度。

公开(公告)号：US09184374B2

公开(公告)日：2015-11-10

申请号：US13963762

申请日：2013-08-09

申请人： Kazuya Sawada ,  Toshihiko Nagase ,  Youngmin Eeh ,  Koji Ueda ,  Daisuke Watanabe ,  Masahiko Nakayama ,  Tadashi Kai ,  Hiroaki Yoda

发明人： Kazuya Sawada ,  Toshihiko Nagase ,  Youngmin Eeh ,  Koji Ueda ,  Daisuke Watanabe ,  Masahiko Nakayama ,  Tadashi Kai ,  Hiroaki Yoda

IPC分类号： H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC分类号： H01L43/08 ,  H01L43/10

摘要： According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer.

摘要翻译： 根据一个实施例，磁阻元件包括第一，第二和第三磁性层以及第一和第二非磁性层。 第三磁性层具有包括靠近第二磁性层的第一堆叠层和远离第二磁性层的第二堆叠层的堆叠层。 第一和第二堆叠层中的每一个包括由铁磁材料制成的第一层和由非磁性材料制成的第二层，并且第一层的第一层的膜厚度与第二层的膜厚度的第一比率 高于第二层的第一层的膜厚度与第二层的膜厚度的第二比率。

公开(公告)号：US09385304B2

公开(公告)日：2016-07-05

申请号：US14203249

申请日：2014-03-10

申请人： Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Hiroaki Yoda ,  Hyung Suk Lee ,  Jae Geun Oh ,  Choon Kun Ryu ,  Min Suk Lee

发明人： Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Hiroaki Yoda ,  Hyung Suk Lee ,  Jae Geun Oh ,  Choon Kun Ryu ,  Min Suk Lee

IPC分类号： H01L27/00 ,  H01L43/02 ,  H01L43/12 ,  H01L45/00 ,  G11C11/56 ,  G11C11/15 ,  G11C11/16 ,  H01L27/22 ,  H01L27/24 ,  H01L43/08 ,  H01L43/10

CPC分类号： H01L43/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/228 ,  H01L27/2463 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L45/04

摘要： According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.

摘要翻译： 根据一个实施例，公开了一种磁存储器。 该存储器包括一个包含第一金属材料的导电层，在该导电层上方的层叠体，并且包括一个第一磁化膜，该第一磁化膜含有第二金属材料，第二磁化膜和第一磁化膜与第二磁化膜之间的隧道势垒层 磁化膜和层叠体的侧面上的绝缘层，并且含有第一金属材料的氧化物。 第一磁化膜和/或第二磁化膜包括位于中心部分的第一区域和位于边缘部分中并且包含As，P，Ge，Ga，Sb，In，N，Ar，He的第二区域， F，Cl，Br，I，Si，B，C，O，Zr，Tb，S，Se或Ti。

公开(公告)号：US09178134B2

公开(公告)日：2015-11-03

申请号：US14203198

申请日：2014-03-10

申请人： Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Toshihiko Nagase ,  Hiroaki Yoda

发明人： Masahiko Nakayama ,  Tadashi Kai ,  Masaru Toko ,  Toshihiko Nagase ,  Hiroaki Yoda

IPC分类号： H01L29/00 ,  H01L43/10 ,  H01L43/12 ,  H01L45/00 ,  H01L29/82 ,  H01L27/24 ,  H01L27/22

CPC分类号： H01L43/10 ,  H01L27/222 ,  H01L27/228 ,  H01L27/2463 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12 ,  H01L45/06

摘要： According to one embodiment, a magnetoresistive element is disclosed. The element includes a first magnetic film, a second magnetic film, and a first nonmagnetic layer formed between the first magnetic film and the second magnetic film. The second magnetic film includes a first magnetic layer formed on a side of the first nonmagnetic layer, a second magnetic layer formed on a side opposite to the first nonmagnetic layer, and a second nonmagnetic layer formed between the first magnetic layer and the second magnetic layer and containing TiN.

摘要翻译： 根据一个实施例，公开了一种磁阻元件。 元件包括第一磁性膜，第二磁性膜和形成在第一磁性膜和第二磁性膜之间的第一非磁性层。 第二磁性膜包括形成在第一非磁性层一侧的第一磁性层，形成在与第一非磁性层相反的一侧的第二磁性层和形成在第一磁性层和第二磁性层之间的第二非磁性层 并含有TiN。

公开(公告)号：US09123879B2

公开(公告)日：2015-09-01

申请号：US14202802

申请日：2014-03-10

申请人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

发明人： Masahiko Nakayama ,  Masatoshi Yoshikawa ,  Tadashi Kai ,  Yutaka Hashimoto ,  Masaru Toko ,  Hiroaki Yoda ,  Jae Geun Oh ,  Keum Bum Lee ,  Choon Kun Ryu ,  Hyung Suk Lee ,  Sook Joo Kim

IPC分类号： H01L27/00 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

摘要翻译： 根据一个实施例，公开了一种磁阻元件。 磁阻元件包括参考层，隧道势垒层，存储层。 存储层包括第一区域和设置在第一区域外部以围绕第一区域的第二区域，第二区域包括包含在第一区域中的元素，而另一个元素不同于元件。 磁阻元件进一步包括盖层，该盖层包括第三区域和设置在第三区域外部以包围第三区域的第四区域，第四区域包括包括在第三区域中的元件和另一元件。