摘要:
A gate drive circuit includes plural stages connected together one after each other. Each of the plural stages includes a circuit transistor, a capacitor part, a first connection part and a second connection part. The circuit transistor outputs the gate signal through a source electrode in response to a control signal applied through a gate electrode. The capacitor part includes a first electrode, a second electrode formed on the first electrode, and a third electrode formed on the second electrode. The first connection part electrically connects the gate electrode of the circuit transistor and the second electrode of the capacitor part. The second connection part electrically connects the source electrode of the circuit transistor and the first electrode of the capacitor part. Thus, an integrated size of a gate drive circuit may be decreased, and a reliability of a gate drive circuit may be enhanced.
摘要:
A thin film array panel is provided, which includes: a plurality of signal lines including contact parts for contact with an external device; a plurality of thin film transistors connected to the signal lines; an insulating layer formed on the signal lines and the thin film transistors; and a plurality of pixel electrodes formed on the insulating layer and connected to the thin film transistors, wherein the insulating layer includes a contact portion disposed on the contact parts of the signal lines and having a thickness smaller than other portions and the contact portion of the insulating layer includes an inclined portion having an inclination angle smaller than about 45 degrees.
摘要:
A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern during a oxidation process. The capping layer may be a multilayer structure and may be etched to form insulating spacers on the sidewalls of the metal gate pattern. The capping layer(s) allow the use of a selective oxidation process, which may be a wet oxidation process utilizing partial pressures of both H2O and H2 in an H2-rich atmosphere, to oxidize portions of the substrate and metal gate pattern while suppressing the oxidation of metal layers that may be included in the metal gate pattern. This allows etch damage to the silicon substrate and edges of the metal gate pattern to be reduced while substantially maintaining the original thickness of the gate insulating layer and the conductivity of the metal layer(s).
摘要:
Methods of forming a semiconductor device having a metal gate electrode include sequentially forming a gate insulator, a gate polysilicon layer and a metal-gate layer on a semiconductor substrate. The metal-gate layer and the gate polysilicon layer are sequentially patterned to form a gate pattern comprising a stacked gate polysilicon pattern and a metal-gate pattern. An oxidation barrier layer is formed to cover at least a portion of a sidewall of the metal-gate pattern.
摘要:
In a driving unit (e.g., a gate driving unit) and a flat panel display apparatus having the driving unit, a circuit portion of the driving unit includes a plurality of driving stages cascade-connected to one another and outputs a (gate) driver signal (a plurality of gate-driving signals) based on a plurality of control signals. The line portion comprises a first signal line and a second signal line, each of which transmits control signals from the outside, and a first connection line connecting the first signal line to the driving stages, and a second connection line connecting the second signal line to the driving stages. The second signal line is positioned at a different (metallization) layer from the first signal line and the first and second connection lines. Therefore, malfunctioning of the driving unit caused by corrosion may be prevented.
摘要:
A thin film transistor array panel comprising: an insulating substrate; a plurality of gate lines formed on the insulating substrate and including a plurality of gate electrodes and end portions; a plurality of storage electrode lines formed on the insulating substrate; a gate insulating layer formed on the gate lines and storage electrode lines; a semiconductor layer formed on the gate insulating layer; a ohmic contact layer formed on the semiconductor layer; a plurality of data lines formed on the gate insulating layer, intersecting the gate lines to define a display area, and having source electrodes and end portions; a plurality of drain electrodes facing the source electrodes; a passivation layer formed on the data lines and drain electrodes and having contact holes; a plurality of pixel electrodes formed on the passivation layer and connected to the drain electrodes through the contact holes; a storage line connecting bar connecting the storage electrode lines; and a redundant connecting line connecting the storage electrode lines is provided.
摘要:
A gate driver includes multiple stages. Each stage has a circuit portion and a wiring portion. The wiring portion delivers first and second clock signals to the circuit portion. Further, the wiring portion includes first and second clock wirings receiving the first and second clock signal, respectively, first connecting wirings electrically connecting the first clock wiring with a first every other stage, and second connecting wirings electrically connecting the second clock wiring with the odd-numbered stages. Further, the wiring portion includes third connecting wirings electrically connecting the first connecting wiring with a second every other stage and fourth connecting wirings electrically connecting the second connecting wiring with the even-numbered stages. This configuration may prevent the gate driver from operating erroneously and reduce power consumed by the gate driver.
摘要:
A display device includes a pixel matrix having pixel rows and pixel columns and including pixels having switching elements positioned alternately at a corner near an upper and a lower side of each pixel row and positioned alternately at a corner near an upper and a lower side of and alternately at a corner near a left and a right side of each pixel column; multiple pairs of gate lines transmitting a gate-on voltage; and multiple data lines transmitting data voltages, wherein each pair of gate lines are disposed at the upper and lower sides of each pixel row with the pixels in each row connected to the gate line positioned nearest the respective switching element, and each data line is disposed between adjacent pairs of pixel columns and connected to pairs of pixels where one pixel of the pair has a switching element positioned nearest the respective data line.
摘要:
A calibration apparatus and method for supporting a Relay Station (RS) in a multiple antenna communication system are provided. The calibration method in the multiple antenna communication system which supports the RS includes, when a modem stage sends a downlink calibration signal, receiving, at a calibrator, the downlink calibration signal and estimating a downlink path channel, when the calibrator sends an uplink calibration signal, receiving, at the modem stage, the uplink calibration signal and estimating an uplink path channel, determining, at the modem stage, calibration coefficients per path not to generate a phase and amplitude difference with respect to the estimated uplink path channel and the estimated downlink path channel, and applying the calibration coefficients per path to corresponding antennas respectively.
摘要:
A base station is capable of performing 4-beamforming using Radio Units (RU), each having two paths in a wireless communication system. The base station includes a Digital Unit (DU), a first RU, and a second RU. The DU performs a mutual conversion function between an information bit line and a digital signal, calculates beamforming coefficients for 4-beamforming, and performs the 4-beamforming using the beamforming coefficients. The first RU has two Radio Frequency (RF) paths, extracts a clock signal from a digital signal from the DU, and provides the clock signal to the second RU. The second RU has two RF paths and operates according to the clock signal provided from the first RU.