公开(公告)号：US07297632B2

公开(公告)日：2007-11-20

申请号：US11082517

申请日：2005-03-17

申请人： Chuang-Ping Hou ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Chu-Yun Fu ,  Tung-Ching Tseng

发明人： Chuang-Ping Hou ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Chu-Yun Fu ,  Tung-Ching Tseng

IPC分类号： H01L21/311

CPC分类号： H01L21/31053

摘要： A method for forming a semiconductor device utilizing a chemical-mechanical polishing (CMP) process is provided. In one example, the method includes sequentially performing a first CMP process for removing a first portion of an oxide surface of a semiconductor device using a high selectivity slurry (HSS) and a first polish pad, interrupting the first CMP process, cleaning the semiconductor device and the first polish pad, and performing a second CMP process for removing a second portion of the oxide surface.

摘要翻译： 提供了一种利用化学机械抛光（CMP）工艺形成半导体器件的方法。 在一个示例中，该方法包括依次执行第一CMP处理，以使用高选择性浆料（HSS）和第一抛光垫去除半导体器件的氧化物表面的第一部分，中断第一CMP工艺，清洁半导体器件 和第一抛光垫，并且执行用于去除氧化物表面的第二部分的第二CMP工艺。

公开(公告)号：US06924238B2

公开(公告)日：2005-08-02

申请号：US10455037

申请日：2003-06-05

申请人： Tzu-Jen Chou ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Shen-Nan Lee

发明人： Tzu-Jen Chou ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Shen-Nan Lee

IPC分类号： H01L21/3105 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768

CPC分类号： H01L21/31053 ,  H01L21/31056 ,  H01L21/31116 ,  H01L21/76835 ,  H01L21/7684

摘要： A new method and structure is provided for the polishing of the surface of a layer of low-k dielectric material. Low-k dielectric material of low density and relatively high porosity is combined with low-k dielectric material of high density and low porosity whereby the latter high density layer is, prior to polishing of the combined layers, deposited over the former low density layer. Polishing of the combined layers removes flaking of the polished low-k layers of dielectric. This method can further be extended by forming conductive interconnects through the layers of dielectric, prior to the layer of dielectric.

摘要翻译： 提供了一种用于抛光低k电介质材料层的表面的新方法和结构。 低密度和相对高孔隙率的低k电介质材料与高密度和低孔隙率的低k电介质材料组合，由此后者的高密度层在组合层的抛光之前沉积在前者的低密度层上。 组合层的抛光消除抛光的低k层电介质的剥落。 在电介质层之前，可以通过在电介质层之间形成导电互连来进一步延长该方法。

公开(公告)号：US20050090096A1

公开(公告)日：2005-04-28

申请号：US10691019

申请日：2003-10-22

申请人： Chuan-Ping Hou ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Tung-Ching Tseng

发明人： Chuan-Ping Hou ,  Syun-Ming Jang ,  Ying-Ho Chen ,  Tung-Ching Tseng

IPC分类号： H01L21/00 ,  H01L21/306 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/74 ,  H01L21/762

CPC分类号： H01L21/743 ,  H01L21/76283 ,  H01L21/76286

摘要： In a method of the present invention, an intermediate structure having a top surface is provided. An isolation trench is formed is the intermediate structure. Isolation material is deposited over the intermediate structure. The isolation material fills the isolation trench. Excess isolation material extends above the top surface of the intermediate structure. Part of the excess isolation material is removed until there is a predetermined thickness of isolation material remaining on the top surface of the intermediate structure. A contact opening is formed in the isolation material at the isolation trench. The contact opening extends through at least part of the intermediate structure. Contact material is deposited over the isolation material. The contact material fills the contact opening. Excess contact material, if any, that extends above the isolation material is removed. The excess isolation material is removed at least until the top surface of the intermediate structure is reached.

摘要翻译： 在本发明的方法中，提供了具有顶表面的中间结构。 形成隔离沟是中间结构。 隔离材料沉积在中间结构上。 隔离材料填充隔离沟槽。 过多的隔离材料在中间结构的顶表面上方延伸。 去除部分过量隔离材料，直到在中间结构的顶表面上剩余预定厚度的隔离材料。 在隔离沟槽处的隔离材料中形成接触开口。 接触开口延伸穿过中间结构的至少一部分。 接触材料沉积在隔离材料上。 接触材料填充接触开口。 除去在隔离材料上方延伸的过量接触材料（如果有的话）。 至少直到达到中间结构的顶表面去除多余隔离材料。

公开(公告)号：US06869858B2

公开(公告)日：2005-03-22

申请号：US10426529

申请日：2003-04-30

申请人： Syun-Ming Jang ,  Ying-Ho Chen

发明人： Syun-Ming Jang ,  Ying-Ho Chen

IPC分类号： H01L21/3105 ,  H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76245 ,  H01L21/31053

摘要： A method for forming a series of patterned planarized aperture fill layers within a series of apertures within a topographic substrate layer employed within a microelectronics fabrication. There is first provided a topographic substrate layer employed within a microelectronics fabrication, where the topographic substrate layer comprises a series of mesas of substantially equivalent height but of differing widths and the series of mesas is separated by a series of apertures. There is then formed upon the topographic substrate layer a blanket aperture fill layer. The blanket aperture fill layer is formed employing a simultaneous deposition and sputter method. The blanket aperture fill layer fills the series of apertures to a planarizing thickness at least as high as the height of the mesas while simultaneously forming a series of protrusions of the blanket aperture fill layer corresponding with the tops of the series of mesas, where the thickness of a protrusion of the blanket aperture fill layer over a narrow mesa is less than the thickness of a protrusion of the blanket aperture fill layer over a wide mesa. The simultaneous deposition and sputter method employs a deposition rate:sputter rate ratio which provides sufficient thickness of the blanket aperture fill layer over the narrow mesa to insure coverage of the edges of the mesas. A blanket etching process is employed to remove a portion of the blanket aperture fill layer so that chemical mechanical polish (CMP) planarizing of the residual blanket aperture fill layer forms the series of patterned planarized aperture fill layers within the series of apertures.

摘要翻译： 一种用于在微电子学制造中使用的地形衬底层内的一系列孔内形成一系列图案化的平坦化孔填充层的方法。 首先提供了在微电子制造中使用的地形衬底层，其中地形衬底层包括基本上等同的高度但具有不同宽度的一系列台面，并且一系列台面由一系列孔分隔开。 然后在地形衬底层上形成橡皮布孔填充层。 使用同时沉积和溅射方法形成橡皮布孔填充层。 橡皮布孔填充层将一系列孔填充至至少与台面高度相同的平坦化厚度，同时形成与一系列台面的顶部相对应的橡皮布孔填充层的一系列突起，其中厚度 在窄的台面上的橡皮布孔填充层的突起的厚度小于宽台面上的橡皮布孔填充层的突起的厚度。 同时沉积和溅射方法采用沉积速率：溅射速率比，其提供在窄台面上的覆盖孔填充层的足够厚度，以确保台面边缘的覆盖。 采用毯式蚀刻工艺来去除橡皮布孔填充层的一部分，使得残余橡皮布孔填充层的化学机械抛光（CMP）平面化在一系列孔内形成一系列图案化的平坦化孔填充层。

公开(公告)号：US06620034B2

公开(公告)日：2003-09-16

申请号：US10043780

申请日：2002-01-14

申请人： Tsu Shih ,  Jih-Churng Jwu ,  Ying-Ho Chen ,  Syun-Ming Jang

发明人： Tsu Shih ,  Jih-Churng Jwu ,  Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： B24B100

CPC分类号： B24B37/12 ,  B24B37/015 ,  B24B55/02

摘要： The invention provides a method and an apparatus that prevent the accumulation of copper ions during CMP of copper lines by performing the CMP process at low temperatures and by maintaining this low temperature during the CMP process by adding a slurry that functions as a corrosion inhibitor.

摘要翻译： 本发明提供了一种方法和装置，其通过在低温下进行CMP工艺，并且通过添加用作腐蚀抑制剂的浆料在CMP工艺期间保持该低温来防止铜线的CMP中的铜离子的累积。

公开(公告)号：US06422929B1

公开(公告)日：2002-07-23

申请号：US09541070

申请日：2000-03-31

申请人： Syun-Ming Jang ,  Ying-Ho Chen

发明人： Syun-Ming Jang ,  Ying-Ho Chen

IPC分类号： B24B2100

CPC分类号： B24B37/24 ,  B24B21/04 ,  B24B37/26 ,  B24D18/0063

摘要： A polishing pad for use in a linear polisher, and more specifically, for a linear chemical mechanical polishing apparatus that has improved polishing uniformity is described. The polishing pad is provided with a top surface for engaging a wafer surface to be polished. The top surface has a center portion and two oppositely situated edge portions. The polishing pad is further provided with a multiplicity of voids situated in the top surface of the pad body such that the top surface has a void-to-surface ratio that is greater in the two edge portions than in the center portion of the top surface. The present invention novel polishing pad provides a more uniform polishing across a wafer surface, together with an improved planarity after polishing.

摘要翻译： 描述了一种用于线性抛光机的抛光垫，更具体地说，涉及具有改善的抛光均匀性的线性化学机械抛光装置。 抛光垫设置有用于接合要抛光的晶片表面的顶表面。 顶表面具有中心部分和两个相对设置的边缘部分。 抛光垫还设置有位于衬垫主体的顶表面中的多个空隙，使得顶表面在两个边缘部分中的空隙与表面之比大于顶表面的中心部分 。 本发明的新型抛光垫在晶片表面上提供更均匀的抛光以及抛光后的改进的平面度。

公开(公告)号：US06274483B1

公开(公告)日：2001-08-14

申请号：US09483933

申请日：2000-01-18

申请人： Weng Chang ,  Ying-Ho Chen ,  Syun-Ming Jang

发明人： Weng Chang ,  Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： H01L214763

CPC分类号： H01L21/76804 ,  H01L21/7688

摘要： A new method is provided for the creation of the trenches or line patterns of damascene structures. Under the first embodiment of the invention, the trenches that are created for the copper interconnect lines are sputter etched as a result of which the corners of the trenches around the top elevation of the trenches are rounded. Under the second embodiment of the invention a disposable hard mask is created over the surface of the dielectric after which the trenches for the interconnect lines are created. The surface of the hard mask layer including the created trenches are rf sputter etched resulting in a sharp reduction of the angle of incidence between sidewalls of the trenches around the perimeter of the trenches and the surface of the layer of dielectric. The barrier and seed layers are deposited over the surface of the disposable hard mask including the created trenches, the deposited copper is polished down to the surface of the dielectric.

摘要翻译： 提供了一种用于创建大马士革结构的沟槽或线条图案的新方法。 在本发明的第一实施例中，为铜互连线创建的沟槽被溅射蚀刻，结果，沟槽顶部高度周围的沟槽的角部是圆形的。 在本发明的第二实施例中，在电介质的表面上形成一次性硬掩模，之后形成用于互连线的沟槽。 包括产生的沟槽的硬掩模层的表面被溅射蚀刻，导致围绕沟槽的周边和电介质层的表面的沟槽的侧壁之间的入射角的急剧减小。 阻挡层和种子层沉积在包括所产生的沟槽的一次性硬掩模的表面上，沉积的铜被抛光到电介质的表面。

公开(公告)号：US06634930B1

公开(公告)日：2003-10-21

申请号：US09635013

申请日：2000-08-09

申请人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang ,  Chia-Ming Yang

发明人： Ying-Ho Chen ,  Wen-Chih Chiou ,  Tsu Shih ,  Syun-Ming Jang ,  Chia-Ming Yang

IPC分类号： B24B100

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A method for preventing copper corrosion on a wafer during a chemical mechanical polishing process when the process is temporarily halted due to equipment malfunction and an apparatus for carrying out such method are disclosed. In the method, after the chemical mechanical polishing process is stopped for correcting equipment malfunction or any other processing problems, a cleaning solvent is sprayed toward the wafer surface to remove substantially all slurry solution from the surface to prevent corrosion of the copper layer, or other metal layer, by the slurry solution. The cleaning solvent may be sprayed from spray nozzles mounted around and juxtaposed to the polishing table onto which the polishing pad is mounted as long as the spray nozzles do not interfere with the rotation of the polishing pad.

摘要翻译： 本发明公开了一种在化学机械抛光工艺中由于设备故障暂时停止处理而在晶片上进行铜腐蚀的方法及其实施方法。 在该方法中，在化学机械抛光处理停止以纠正设备故障或任何其它处理问题之后，向晶片表面喷射清洗溶剂，以从表面去除基本上所有的浆液，以防止铜层或其它 金属层，通过浆料溶液。 只要喷嘴不干扰抛光垫的旋转，清洁溶剂可以从安装在其周围的喷嘴喷射并且并列在抛光台上，抛光垫安装在抛光台上。

公开(公告)号：US06365523B1

公开(公告)日：2002-04-02

申请号：US09177188

申请日：1998-10-22

申请人： Syun-Ming Jang ,  Chu-Yun Fu ,  Ying-Ho Chen

发明人： Syun-Ming Jang ,  Chu-Yun Fu ,  Ying-Ho Chen

IPC分类号： H01L21302

CPC分类号： H01L21/76229 ,  H01L21/31053 ,  H01L21/31612

摘要： A method for forming a series of patterned planarized aperture fill layers within a series of apertures within a topographic substrate layer employed within a microelectronics fabrication. There is first provided a topographic substrate layer employed within a microelectronics fabrication, where the topographic substrate layer comprises a series of mesas of substantially equivalent height but of differing widths and the series of mesas is separated by a series of apertures. There is then formed upon the topographic substrate layer a blanket first aperture fill layer. The blanket first aperture fill layer is formed employing a first simultaneous deposition and sputter method. The blanket first aperture fill layer fills the series of apertures to a planarizing thickness at least as high as the height of the mesas while simultaneously forming a series of protrusions of the blanket first aperture fill layer corresponding with the series of mesas, where the thickness of a protrusion of the blanket first aperture fill layer over a narrow mesa is less than the thickness of a protrusion of the blanket first aperture fill layer over a wide mesa. The first simultaneous deposition and sputter method employs a first deposition rate:sputter rate ratio which provides sufficient thickness of the blanket first aperture fill layer over the narrow mesa such that upon chemical mechanical polish (CMP) planarizing the blanket first aperture fill layer to form a series of patterned planarized first aperture fill layers within the series of apertures erosion of the narrow mesa is attenuated. Finally, there is then chemical mechanical polish (CMP) planarized the blanket first aperture fill layer to form the series of patterned planarized first aperture fill layers within the series of apertures.

摘要翻译： 一种用于在微电子学制造中使用的地形衬底层内的一系列孔内形成一系列图案化的平坦化孔填充层的方法。 首先提供了在微电子制造中使用的地形衬底层，其中地形衬底层包括基本上等同的高度但具有不同宽度的一系列台面，并且一系列台面由一系列孔分隔开。 然后在地形衬底层上形成毯子第一孔填充层。 毯子第一孔填充层使用第一同时沉积和溅射方法形成。 毯子第一孔填充层将一系列孔填充至至少与台面的高度相同的平坦化厚度，同时形成与一系列台面相对应的毯子第一孔填充层的一系列突起，其中厚度 毯子第一孔填充层在窄台面上的突起小于宽台面上的第一孔填充层的突起的厚度。 第一同时沉积和溅射方法使用第一沉积速率：溅射速率比，其在窄台面上提供足够厚度的第一孔填充层，使得在化学机械抛光（CMP）上平坦化第一孔填充层以形成 一系列图案化的平面化的第一孔径填充层在一系列孔径内的狭窄台面的侵蚀被衰减。 最后，然后是化学机械抛光（CMP）平坦化第一孔填充层，以在一系列孔内形成一系列图案化的平坦化的第一孔填充层。

公开(公告)号：US20060112971A1

公开(公告)日：2006-06-01

申请号：US10999277

申请日：2004-11-30

申请人： Han-Hsin Kuo ,  Hsin-Hsien Lu ,  Ying-Ho Chen ,  Syun-Ming Jang

发明人： Han-Hsin Kuo ,  Hsin-Hsien Lu ,  Ying-Ho Chen ,  Syun-Ming Jang

IPC分类号： C23G1/00 ,  B08B7/00 ,  B08B3/00

CPC分类号： H01L21/02074 ,  C23G1/00

摘要： A method for cleaning a semiconductor wafer surface comprises sweeping the semiconductor wafer surface and applying a first cleaning solution having a first pH, stop applying the first cleaning solution and applying a first rinsing solution to the semiconductor wafer surface, the first rinsing solution having a second pH that is significantly different from the first pH, sweeping the semiconductor wafer surface and applying a second cleaning solution having a third pH, and stop applying the second cleaning solution and applying a second rinsing solution to the semiconductor wafer surface, the second rinsing solution having a fourth pH that is significantly different from the third pH.

摘要翻译： 一种清洗半导体晶片表面的方法，包括扫描半导体晶片表面并施加具有第一pH值的第一清洗溶液，停止施加第一清洗溶液并向半导体晶片表面施加第一冲洗溶液，第一冲洗溶液具有第二 pH与第一pH显着不同，扫描半导体晶片表面并施加具有第三pH的第二清洗溶液，并停止施加第二清洗溶液并将第二冲洗溶液施加到半导体晶片表面，第二冲洗溶液具有 与第三pH显着不同的第四个pH。