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公开(公告)号:US20200133143A1
公开(公告)日:2020-04-30
申请号:US16516452
申请日:2019-07-19
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Hao-Yu LAN , Po-Chung CHENG , Ching-Juinn HUANG , Tzung-Chi FU , Tsung-Yen LEE
IPC: G03F9/00
Abstract: A method includes the following operations. A reference image of a mask having a plurality of mapping marks is acquired. A lithography exposing process is performed by a scanner with the mask to a photoresist layer which is formed on a substrate. Performing the lithography exposing process includes mapping a real-time image of the mask with the reference image of the mask.
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公开(公告)号:US20200133136A1
公开(公告)日:2020-04-30
申请号:US16261695
申请日:2019-01-30
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Kuan-Hung CHEN , Chieh HSIEH , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
IPC: G03F7/20
Abstract: A method for operating a semiconductor apparatus includes generating a plurality of target droplets, deforming the target droplets into a plurality of target plumes respectively, changing an orientation of at least one of the target plumes, and generating a plurality of EUV radiations from the target plumes respectively. At least one of the EUV radiations irradiates an area on the light collector different from other EUV radiations in response to the orientation of the at least one of the target plumes.
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公开(公告)号:US20200073261A1
公开(公告)日:2020-03-05
申请号:US16675921
申请日:2019-11-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chi YANG , Ssu-Yu CHEN , Shang-Chieh CHIEN , Chieh HSIEH , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.
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公开(公告)号:US20200060015A1
公开(公告)日:2020-02-20
申请号:US16535005
申请日:2019-08-07
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Chun-Chia HSU , Po-Chung CHENG , Li-Jui CHEN , Shang-Chieh CHIEN , Yen-Shuo SU , Chieh HSIEH , Chi YANG
Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation comprises a droplet generator, an excitation laser source, an energy detector, and a feedback controller. The droplet generator is configured to generate target droplets. The excitation laser is configured to generate a pre-pulse and a main pulse to convert the target droplets to plasma by heating. The energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. The feedback controller is configured to adjust a time delay between a subsequent pre-pulse and main pulse generated by the excitation laser based on the variation in EUV energy generated by a given main pulse.
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公开(公告)号:US20200057384A1
公开(公告)日:2020-02-20
申请号:US16102865
申请日:2018-08-14
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Chao-Chen CHANG , Shao-Wei LUO , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
IPC: G03F7/20
Abstract: A method includes operation below. A first task is performed by a control circuit according to a first request from a processor. A second request, for triggering a second task to be performed by the control circuit, is received by an interface circuit. A first data rate, for transmitting first data generated in the first task, is calculated by the interface circuit. A second data rate, for transmitting second data to be generated in the second task, is estimated by the interface circuit. The second task other than the first task is performed by the control circuit. The first data and the second data are transmitted from the control circuit to the processor in a condition that a sum of the first data rate and the second data rate complies with a bandwidth of a data switch coupled between the control circuit and the processor.
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公开(公告)号:US20200035483A1
公开(公告)日:2020-01-30
申请号:US16182771
申请日:2018-11-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Siao-Chian HUANG , Po-Chung CHENG , Ching-Juinn HUANG , Tzung-Chi FU , Tsung-Yen LEE
Abstract: A particle removal apparatus is provided. The particle removal apparatus includes a reticle holder configured to hold a reticle. The particle removal apparatus further includes a robotic arm. The particle removal apparatus also includes a particle removal device disposed on the robotic arm, and the particle removal device includes a solution spraying module. In addition, the robotic arm and the particle removal device are configured to align with a particle on a backside of the reticle, and the solution spraying module is configured to spray a solution onto the particle to remove the particle.
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公开(公告)号:US20200033717A1
公开(公告)日:2020-01-30
申请号:US16359073
申请日:2019-03-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chia-Yu LEE , Tao-Hsin CHEN , Chia-Hao HSU , Ching-Juinn HUANG , Po-Chung CHENG
IPC: G03F1/24 , H01L21/033 , H01L29/06
Abstract: A reticle stage is provided, including an electrostatic chuck and an acoustic wave transducer. The electrostatic chuck includes multiple chucking electrodes embedded in a dielectric body and configured to secure a reticle to a chuck surface of the dielectric body by electrostatic attraction. The acoustic wave transducer is disposed on the chuck surface and configured to impart a surface acoustic wave to the chuck surface to vibrate the chuck surface, thereby removing the reticle from the reticle stage.
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公开(公告)号:US20200025688A1
公开(公告)日:2020-01-23
申请号:US16587010
申请日:2019-09-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Lin Louis CHANG , Shang-Chieh CHIEN , Shang-Ying WU , Li-Kai CHENG , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG , Anthony YEN , Chia-Chen CHEN
IPC: G01N21/88 , G03F7/20 , H01L21/027 , G01N21/956 , G01N21/94 , G01N21/954
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
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公开(公告)号:US20200008290A1
公开(公告)日:2020-01-02
申请号:US16380423
申请日:2019-04-10
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Yen-Shuo SU , Chun-Lin CHANG , Han-Lung CHANG , Li-Jui CHEN , Po-Chung CHENG
Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.
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公开(公告)号:US20190104604A1
公开(公告)日:2019-04-04
申请号:US16132990
申请日:2018-09-17
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Shang-Chieh CHIEN , Chi YANG , Jen-Yang CHUNG , Shao-Wei LUO , Tzung-Chi FU , Chun-Kuang CHEN , Li-Jui CHEN , Po-Chung CHENG
Abstract: An extreme ultraviolet (EUV) source includes a collector mirror, a drain, a droplet generator configured to eject a target material toward the drain, a pellicle disposed over the collector mirror. The pellicle is configured to catch debris formed of the target material.
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