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公开(公告)号:US20240365460A1
公开(公告)日:2024-10-31
申请号:US18769896
申请日:2024-07-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Kuang SUN , Ming-Hsun TSAI , Wei-Shin CHENG , Cheng-Hao LAI , Hsin-Feng CHEN , Chiao-Hua CHENG , Cheng-Hsuan WU , Yu-Fa LO , Jou-Hsuan LU , Shang-Chieh CHIEN , Li-Jui CHEN , Heng-Hsin LIU
CPC classification number: H05G2/006 , G03F7/70033 , G05D23/19
Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.
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公开(公告)号:US20240004304A1
公开(公告)日:2024-01-04
申请号:US17855357
申请日:2022-06-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Cheng Hung TSAI , Sheng-Kang YU , Shang-Chieh CHIEN , Heng-Hsin LIU , Li-Jui CHEN
IPC: G03F7/20
CPC classification number: G03F7/70175 , G03F7/70033
Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.
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公开(公告)号:US20230375944A1
公开(公告)日:2023-11-23
申请号:US17750151
申请日:2022-05-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Shang-Chieh CHIEN , Tzu-Jung PAN , Wei-Shin CHENG , Cheng Hung TSAI , Li-Jui CHEN , Heng-Hsin LIU
IPC: G03F7/20
CPC classification number: G03F7/7065 , G03F7/70033 , G03F7/7085 , G03F7/70025 , G03F7/70041
Abstract: An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned within the scanner and configured to attract and decompose contaminant particles within the scanner. The contamination reduction structure includes a surface material that is highly electronegative.
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44.
公开(公告)号:US20220269182A1
公开(公告)日:2022-08-25
申请号:US17501848
申请日:2021-10-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Tai-Yu CHEN , Shang-Chieh CHIEN , Sheng-Kang YU , Li-Jui CHEN , Heng-Hsin LIU
Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.
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公开(公告)号:US20210149317A1
公开(公告)日:2021-05-20
申请号:US16683432
申请日:2019-11-14
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Hsiang CHEN , Sheng-Kang YU , Shang-Chieh CHIEN , Li-Jui CHEN
Abstract: A method of controlling a temperature of the semiconductor device includes operating an semiconductor apparatus; maintaining a temperature of a vessel of the semiconductor apparatus with a first cooling output by a cooling controller; heating the vessel for removing a material on the vessel; transferring a first signal, by a converter, to the cooling controller when heating the vessel; and reducing the first cooling output to a second cooling output by the cooling controller base on the first signal.
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46.
公开(公告)号:US20200348607A1
公开(公告)日:2020-11-05
申请号:US16927142
申请日:2020-07-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chi YANG , Ssu-Yu CHEN , Shang-Chieh CHIEN , Chieh HSIEH , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.
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公开(公告)号:US20200133136A1
公开(公告)日:2020-04-30
申请号:US16261695
申请日:2019-01-30
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Kuan-Hung CHEN , Chieh HSIEH , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
IPC: G03F7/20
Abstract: A method for operating a semiconductor apparatus includes generating a plurality of target droplets, deforming the target droplets into a plurality of target plumes respectively, changing an orientation of at least one of the target plumes, and generating a plurality of EUV radiations from the target plumes respectively. At least one of the EUV radiations irradiates an area on the light collector different from other EUV radiations in response to the orientation of the at least one of the target plumes.
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48.
公开(公告)号:US20200073261A1
公开(公告)日:2020-03-05
申请号:US16675921
申请日:2019-11-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chi YANG , Ssu-Yu CHEN , Shang-Chieh CHIEN , Chieh HSIEH , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.
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公开(公告)号:US20200060015A1
公开(公告)日:2020-02-20
申请号:US16535005
申请日:2019-08-07
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Chun-Chia HSU , Po-Chung CHENG , Li-Jui CHEN , Shang-Chieh CHIEN , Yen-Shuo SU , Chieh HSIEH , Chi YANG
Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation comprises a droplet generator, an excitation laser source, an energy detector, and a feedback controller. The droplet generator is configured to generate target droplets. The excitation laser is configured to generate a pre-pulse and a main pulse to convert the target droplets to plasma by heating. The energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. The feedback controller is configured to adjust a time delay between a subsequent pre-pulse and main pulse generated by the excitation laser based on the variation in EUV energy generated by a given main pulse.
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公开(公告)号:US20200057384A1
公开(公告)日:2020-02-20
申请号:US16102865
申请日:2018-08-14
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Chao-Chen CHANG , Shao-Wei LUO , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
IPC: G03F7/20
Abstract: A method includes operation below. A first task is performed by a control circuit according to a first request from a processor. A second request, for triggering a second task to be performed by the control circuit, is received by an interface circuit. A first data rate, for transmitting first data generated in the first task, is calculated by the interface circuit. A second data rate, for transmitting second data to be generated in the second task, is estimated by the interface circuit. The second task other than the first task is performed by the control circuit. The first data and the second data are transmitted from the control circuit to the processor in a condition that a sum of the first data rate and the second data rate complies with a bandwidth of a data switch coupled between the control circuit and the processor.
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