公开(公告)号：US20230343604A1

公开(公告)日：2023-10-26

申请号：US18338807

申请日：2023-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo ,  Chen-Hua Yu

IPC: H01L21/48 ,  C08G73/10 ,  H01L21/56 ,  C09D179/08 ,  H01L23/538

CPC classification number: H01L21/4857 ,  C08G73/1025 ,  H01L21/563 ,  C09D179/08 ,  H01L2224/48091 ,  H01L2224/04105 ,  H01L2924/181 ,  H01L2224/18 ,  H01L2224/73267 ,  H01L2224/12105 ,  H01L2224/73265 ,  H01L23/5389 ,  H01L2924/15311 ,  C08G2190/00

Abstract: A method of manufacturing a semiconductor device includes placing a polymer raw material mixture over a substrate. The polymer raw material may include a polymer precursor, a photosensitizer, and an additive. The polymer raw material mixture is exposed to radiation to form a dielectric layer and cured at a temperature of between about 150° C. and about 230° C.

公开(公告)号：US11798857B2

公开(公告)日：2023-10-24

申请号：US16897287

申请日：2020-06-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yung-Chi Chu ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao

IPC: H01L23/31 ,  H01L23/16 ,  C08L79/08 ,  H01L21/768 ,  C08G73/22 ,  C08K5/134 ,  C08L33/24

CPC classification number: H01L23/31 ,  C08G73/22 ,  C08K5/1345 ,  C08L33/24 ,  C08L79/08 ,  H01L21/76802 ,  H01L23/16

Abstract: A composition for a sacrificial film includes a polymer, a solvent, and a plasticize compound having an aromatic ring structure. A package includes a die, through insulating vias (TIV), an encapsulant, and a redistribution structure. The die includes a sensing component. The TIVs surround the die. The encapsulant laterally encapsulates the die and the TIVs. The redistribution structure is over the die, the TIVs, and the encapsulant. The redistribution structure has an opening exposing the sensing component of the die. A top surface of the redistribution structure is slanted.

公开(公告)号：US20230275040A1

公开(公告)日：2023-08-31

申请号：US18312705

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yu Lee ,  Chiang Lin ,  Yueh-Ting Lin ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yu-Hsiang Hu

IPC: H01L23/58 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L21/56

CPC classification number: H01L23/585 ,  H01L23/481 ,  H01L24/32 ,  H01L24/73 ,  H01L23/3128 ,  H01L23/5226 ,  H01L23/5283 ,  H01L21/563 ,  H01L24/17 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/73253 ,  H01L2924/1436 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02381

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

公开(公告)号：US11605607B2

公开(公告)日：2023-03-14

申请号：US17206442

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L25/18 ,  H01L23/29 ,  H01L21/56

Abstract: In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.

公开(公告)号：US20220382150A1

公开(公告)日：2022-12-01

申请号：US17870388

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo ,  Chen-Hua Yu

IPC: G03F7/031 ,  H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L25/00 ,  C08K5/375 ,  H01L25/065

Abstract: A method of manufacturing a semiconductor device includes forming a polymer mixture over a substrate, curing the polymer mixture to form a polymer material, and patterning the polymer material. The polymer mixture includes a polymer precursor, a photosensitizer, a cross-linker, and a solvent. The polymer precursor may be a polyamic acid ester. The cross-linker may be tetraethylene glycol dimethacrylate. The photosensitizer includes 4-phenyl-2-(piperazin-1-yl)thiazole. The mixture may further include an additive.

公开(公告)号：US11454888B2

公开(公告)日：2022-09-27

申请号：US17021222

申请日：2020-09-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo ,  Chen-Hua Yu

IPC: H01L21/50 ,  G03F7/031 ,  H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L25/00 ,  C08K5/375 ,  H01L25/065

Abstract: A method of manufacturing a semiconductor device includes forming a polymer mixture over a substrate, curing the polymer mixture to form a polymer material, and patterning the polymer material. The polymer mixture includes a polymer precursor, a photosensitizer, a cross-linker, and a solvent. The polymer precursor may be a polyamic acid ester. The cross-linker may be tetraethylene glycol dimethacrylate. The photosensitizer includes 4-phenyl-2-(piperazin-1-yl)thiazole. The mixture may further include an additive.

公开(公告)号：US20220302065A1

公开(公告)日：2022-09-22

申请号：US17206442

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chun Cho ,  Hung-Jui Kuo ,  Yu-Hsiang Hu ,  Sih-Hao Liao

IPC: H01L23/00 ,  H01L25/18 ,  H01L25/065 ,  H01L25/00

Abstract: In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.

公开(公告)号：US20220139725A1

公开(公告)日：2022-05-05

申请号：US17245856

申请日：2021-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chih Chen ,  Yu-Hsiang Hu ,  Hung-Jui Kuo ,  Sih-Hao Liao

IPC: H01L21/48 ,  H01L23/498 ,  G03F7/20

Abstract: A passivation layer and conductive via are provided, wherein the transmittance of an imaging energy is increased within the material of the passivation layer. The increase in transmittance allows for a greater cross-linking that helps to increase control over the contours of openings formed within the passivation layer. Once the openings are formed, the conductive vias can be formed within the openings.

公开(公告)号：US11289426B2

公开(公告)日：2022-03-29

申请号：US16009208

申请日：2018-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yung-Chi Chu ,  Hung-Jui Kuo ,  Jhih-Yu Wang ,  Yu-Hsiang Hu

IPC: H01L23/538 ,  H01L23/58 ,  H01L23/00 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

Abstract: A package includes a die and a redistribution structure. The die has an active surface and is wrapped around by an encapsulant. The redistribution structure disposed on the active surface of the die and located above the encapsulant, wherein the redistribution structure comprises a conductive via connected with the die, a routing pattern located above and connected with the conductive via, and a seal ring structure, the seal ring structure includes a first seal ring element and a second seal ring element located above and connected with the first seal ring element, wherein the second seal ring element includes a seed layer sandwiched between the first seal ring element and the second seal ring element, and a top surface of the first seal ring element is substantially coplanar with a top surface of the conductive via.

公开(公告)号：US20220091505A1

公开(公告)日：2022-03-24

申请号：US17026667

申请日：2020-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sih-Hao Liao ,  Yu-Hsiang Hu ,  Hung-Jui Kuo ,  Chen-Hua Yu

IPC: G03F7/031 ,  H01L21/48 ,  H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L25/18 ,  C08G73/10 ,  G03F7/038 ,  G03F7/039

Abstract: A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.