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公开(公告)号：US07526747B2
公开(公告)日：2009-04-28
申请号：US11165250
申请日：2005-06-24
IPC分类号： G06F17/50
CPC分类号： G01N23/203 , G01N21/9501 , G01N23/225 , G01N2021/95615 , G01R31/307 , G01R31/311 , G06T7/001 , G06T2207/30148 , H01J37/268 , H01J37/28 , H01J2237/2817
摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacitance are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.
摘要翻译： 通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。 产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。 另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和 电容量被确定为与检查图像中的电容重合。 通过使用通过电子束的照射产生的充电来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，进行检查，从而检测缺陷。
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公开(公告)号：US06583413B1
公开(公告)日：2003-06-24
申请号：US09652606
申请日：2000-08-30
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： G01N2300
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspecting instrument includes an electron-optical system for irradiating an electron beam on a sample, an electron beam deflector, a detector for detecting secondary charged particles from the sample, and a mode setting unit for switching between a first mode and a second mode. An electron beam current is larger in the first mode than in the second mode, and an electron beam scanning speed is higher in the first mode than in the second mode. The circuit pattern inspecting instrument is configured so that first the sample is observed in the first mode, then a particular position on the sample is selected based on image data produced by an output of the detector in the first mode, and then the particular position on the sample is observed in the second mode.
摘要翻译： 电路图形检查装置包括用于对样品照射电子束的电子光学系统，电子束偏转器，用于从样品检测二次带电粒子的检测器，以及用于在第一模式和第二模式之间切换的模式设置单元 模式。 在第一模式中电子束电流比第二模式中的电子束电流大，并且在第一模式中电子束扫描速度高于第二模式。 电路图形检查装置被配置为使得首先在第一模式中观察样本，然后基于在第一模式中由检测器的输出产生的图像数据来选择样本上的特定位置，然后选择特定位置 在第二模式下观察样品。
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公开(公告)号：US07242015B2
公开(公告)日：2007-07-10
申请号：US11234197
申请日：2005-09-26
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： H01J37/153 , H01J37/30
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译： 具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是 获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。 通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。
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公开(公告)号：US06931620B2
公开(公告)日：2005-08-16
申请号：US10419141
申请日：2003-04-21
IPC分类号： G01N23/20 , G01N21/95 , G01N21/956 , G01N23/203 , G01N23/225 , G01N27/04 , G01N27/22 , G01R1/06 , G01R31/302 , G01R31/307 , G01R31/311 , G06T7/00 , H01J37/22 , H01J37/26 , H01J37/28 , H01L21/66 , H01L31/0336 , G06F17/50
CPC分类号： G01N23/203 , G01N21/9501 , G01N23/225 , G01N2021/95615 , G01R31/307 , G01R31/311 , G06T7/001 , G06T2207/30148 , H01J37/268 , H01J37/28 , H01J2237/2817
摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacity are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.
摘要翻译： 通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。 产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。 另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和 确定电容量与检查图像中的电容量一致。 通过使用通过电子束的照射产生的充电来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，进行检查，从而检测缺陷。
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公开(公告)号：US06618850B2
公开(公告)日：2003-09-09
申请号：US09785275
申请日：2001-02-20
IPC分类号： G06F1750
CPC分类号： G01N23/203 , G01N21/9501 , G01N23/225 , G01N2021/95615 , G01R31/307 , G01R31/311 , G06T7/001 , G06T2207/30148 , H01J37/268 , H01J37/28 , H01J2237/2817
摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected, such as a semiconductor wafer, with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of this signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacitance are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is thereby conducted to detect a defect.
摘要翻译： 通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。 产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。 另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和 电容量被确定为与检查图像中的电容重合。 通过使用通过电子束的照射产生的电荷来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，从而进行检查以检测缺陷。
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公开(公告)号：US07098455B2
公开(公告)日：2006-08-29
申请号：US10404451
申请日：2003-04-02
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： H01J37/28
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspecting instrument includes an electron-optical system for irradiating an electron beam on a sample, an electron beam deflector, a detector for detecting secondary charged particles from the sample, and a mode setting unit for switching between a first mode and a second mode. An electron beam current is larger in the first mode than in the second mode, and an electron beam scanning speed is higher in the first mode than in the second mode. The circuit pattern inspecting instrument is configured so that first the sample is observed in the first mode, then a particular position on the sample is selected based on image data produced by an output of the detector in the first mode, and then the particular position on the sample is observed in the second mode.
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公开(公告)号：US20060017014A1
公开(公告)日：2006-01-26
申请号：US11234197
申请日：2005-09-26
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： G21G5/00
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
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公开(公告)号：US20050236648A1
公开(公告)日：2005-10-27
申请号：US11165250
申请日：2005-06-24
IPC分类号： G01N23/20 , G01N21/95 , G01N21/956 , G01N23/203 , G01N23/225 , G01N27/04 , G01N27/22 , G01R1/06 , G01R31/302 , G01R31/307 , G01R31/311 , G06T7/00 , H01J37/22 , H01J37/26 , H01J37/28 , H01L21/66 , H01L31/0336
CPC分类号： G01N23/203 , G01N21/9501 , G01N23/225 , G01N2021/95615 , G01R31/307 , G01R31/311 , G06T7/001 , G06T2207/30148 , H01J37/268 , H01J37/28 , H01J2237/2817
摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacity are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.
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公开(公告)号：US20060243908A1
公开(公告)日：2006-11-02
申请号：US11452989
申请日：2006-06-15
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： G21K7/00
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.
摘要翻译： 使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统 光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。 第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。 在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。
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公开(公告)号：US06797954B2
公开(公告)日：2004-09-28
申请号：US10400588
申请日：2003-03-28
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： H01J37244
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译： 具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是 获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。 通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。
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