Abstract:
In a method of scanning a charged particle beam which can position the scan position to a proper location inside a deflectable range of the scan position of charged particle beam, the scan position of charged particle beam is deflected to a plurality of target objects inside a scan position deflectable region and on the basis of a shift of a target object at a scan location after deflection, the deflection amount at the scan location is corrected.
Abstract:
A charged particle beam apparatus can be constructed with a smaller size (resulting in a small installation space) and a lower cost, suppress vibration, operate at higher speed, and be reliable in inspection. The charged particle beam apparatus is largely effective when a wafer having a large diameter is used. The charged particle beam apparatus includes: a plurality of inspection mechanisms, each of which is mounted on a vacuum chamber and has a charged particle beam mechanism for performing at least an inspection on the sample; a single-shaft transfer mechanism that moves the sample between the inspection mechanisms in the direction of an axis of the single-shaft transfer mechanism; and a rotary stage that mounts the sample thereon and has a rotational axis on the single-shaft transfer mechanism. The single-shaft transfer mechanism moves the sample between the inspection mechanisms in order that the sample is placed under any of the inspection mechanisms. The rotary stage positions the sample such that a target portion of the sample can be inspected by the inspection mechanism under which the sample is placed, and the inspection mechanisms inspect the sample.
Abstract:
A charged particle beam apparatus is provided which has high resolving power and a wide scanning region (observation field of view). The apparatus has a unit for adjusting the focus, a unit for adjusting astigmatism, a unit for controlling and detecting scanning positions and a controller operative to control the focus adjustment and astigmatism adjustment at a time in interlocked relation to the scanning positions, thereby assuring compatibility between the high resolving power and the observation view field of a wide area.
Abstract:
Disclosed is a vaccine which has a high therapeutic effect on mycoplasma infection and is highly safe. For the purpose of developing effective therapeutic methods for mycoplasma infection, mycoplasma-mimic particles which are effective as a vaccine for mycoplasma infection are provided, and also provided are bacterium-mimic particles including common bacteria. Bacterium-mimic particles such as mycoplasma-mimic particles can be provided by producing liposome particles in which a lipid antigen specific to a pathogenic bacterium such as mycoplasma is contained as a liposome-constituting lipid component. The administration of the mycoplasma-mimic particles enables the induction of a potent immunological activity in living bodies. The mycoplasma-mimic particles can be used as an excellent vaccine for the prevention or treatment of mycoplasma infection.
Abstract:
A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5. A Z stage 8 sets the distance between the wafer to be inspected 6 and the charge control electrode 5 according to this voltage.
Abstract:
When conditions for an electron gun mainly represented by extraction voltage V1 and accelerating voltage V0 are changed, a charged particle beam is once focused on a fixed position by means of a condenser lens and a virtual cathode position is calculated from a lens excitation of the condenser lens at that time and the mechanical positional relation of the electron gun to set an optical condition. For more accurate setting of the optical condition, a deflecting electrode device is provided at a crossover position of the condenser lens and a voltage is applied to the deflecting electrode device at a constant period so as to control the lens excitation of the condenser lens such that the amount of movement of an image is minimized on an image display unit such as CRT.
Abstract:
An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.
Abstract:
The invention relates to a trajectory correction method for a charged particle beam, and provides a low-cost, high accuracy and high-resolution converging optical system for use with a charged particle beam to solve problems with conventional aberration correction systems. To this end, the present invention uses a configuration which forms electromagnetic field which is concentrated towards a center of a beam trajectory axis, causes oblique of the beam to make use of lens effects and bend the trajectory, and consequently, cancels out large external side non-linear effects such a spherical aberration of the electron lens. Specifically, the configuration generates an electric field concentration in a simple manner by providing electrodes above the axis and applying voltages to the electrodes. Further, the above configuration can be realized trough operations using lenses and deflectors with incident axes and image formation positions that are normal.
Abstract:
A lip categorizing method uses the size and shape of the lips as viewed from the front of the face as a first categorization index and the three-dimensional form of the lips as a second categorization index. The lip categorizing map is composed of a first coordinate axis showing the degree of the first categorization index and a second coordinate axis showing the degree of the second categorization index and has a coordinate system in which the first and second coordinate axes are orthogonal. It also generates makeup information for two-dimensionally correcting the lips of a subject based on preset reference by setting a plurality of points for determining the form features of lips on an image that depicts the lips, and judges the form features of the lips of the subject based on analytical values of the two-dimensional features of the lips measured from the set points.
Abstract:
A charged particle beam apparatus obtains an image by detecting a generation signal inclusively indicative of secondary electrons generated from a specimen. The apparatus has an input unit for inputting current and voltage values to be applied to a charged particle optical system through which the charged particle beam travels, a memory unit for storing shape, position and physical properties of the charged particle optical system and accuracy of the applied current or voltage, an electromagnetic field calculation unit for calculating an electromagnetic field near a path of the charged particle beam, a charged particle trajectory calculation unit for calculating a trajectory of the charged particle beam in the calculated electromagnetic field, a memory unit for storing a result of the trajectory calculation and a controller for controlling the charged particle optical system on the basis of the result of the trajectory calculation.