公开(公告)号：US07279384B2

公开(公告)日：2007-10-09

申请号：US11283984

申请日：2005-11-22

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: H01L21/336

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L29/42336 ,  H01L29/7887

Abstract: A semiconductor memory has plural cell transistors that are arranged in a matrix. The cell transistor comprises a P type silicon substrate, a control gate CG and a pair of electrically isolated floating gates. Plural projections are formed in the silicon substrate, and a pair of N type diffusion regions as the source and the drain is formed in both sides of the projection. The control gate extending in the row direction faces the projection and the floating gate FG1, FG2 via an insulation layer. The width W1 of the floating gate FG1, FG2 in the column direction is larger than the width W2 of the control gate CG, so the floating gate FG1, FG2 and the control gate CG can be manufactured without the self-align process.

Abstract translation: 半导体存储器具有以矩阵排列的多个单元晶体管。 单元晶体管包括P型硅衬底，控制栅极CG和一对电隔离的浮动栅极。 在硅衬底中形成多个突起，并且在突起的两侧形成作为源极和漏极的一对N型扩散区域。 在行方向延伸的控制栅极经由绝缘层面对突起和浮置栅极FG 1，FG 2。 浮动栅极FG 1的宽度W 1，列方向上的FG 2大于控制栅极CG的宽度W 2，因此浮动栅极FG 1，FG 2和控制栅极CG可以在没有自身的情况下制造 对齐过程。

公开(公告)号：US20050190605A1

公开(公告)日：2005-09-01

申请号：US11053952

申请日：2005-02-10

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: G11C11/34 ,  G11C16/04 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L27/11521 ,  G11C16/0408 ,  H01L27/115 ,  H01L29/7887

Abstract: A semiconductor memory has plural cell transistors that are arranged in a matrix. The cell transistor comprises a silicon substrate, a control gate, a pair of electrically isolated floating gates. Plural projections are formed in the P type silicon substrate, and a pair of N type diffusion regions as the source and the drain is formed in both sides of the projection. The control gate faces the projection via a fourth insulation layer. The side surface of the floating gates faces the side surfaces of the projection via a first insulation layer, and faces the control gate via a third insulation layer. The floating gate faces the diffusion region via the first insulation layer.

Abstract translation: 半导体存储器具有以矩阵排列的多个单元晶体管。 单元晶体管包括硅衬底，控制栅极，一对电隔离的浮动栅极。 在P型硅衬底中形成多个突起，并且在突起的两侧形成作为源极和漏极的一对N型扩散区域。 控制门通过第四绝缘层面向突出部。 浮动栅极的侧表面经由第一绝缘层面对突起的侧表面，并且经由第三绝缘层面对控制栅极。 浮栅经由第一绝缘层面向扩散区。

公开(公告)号：US06812518B2

公开(公告)日：2004-11-02

申请号：US10285540

申请日：2002-11-01

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: H10L29788

CPC classification number: H01L27/11526 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/11543 ,  H01L29/66825 ,  H01L29/7887

Abstract: A multiple-bit cell transistor includes a P type silicon substrate, agate insulation layer, a pair of N type source/drain regions, a pair of tunnel insulation layers, and a pair of floating gates. The silicon substrate is formed with a projection while the floating gates each are positioned on one of opposite side walls of the projection. Inter-polycrystalline insulation layers each are formed on one of the floating gates. A control gate faces the top of the projection via the gate insulation layer. An N type region is formed on each side of the projection and contacts the source/drain region adjoining it. The cell transistor lowers a required write voltage, broadens a current window, and enhances resistance to inter-band tunneling.

Abstract translation: 多位单元晶体管包括P型硅衬底，玛瑙绝缘层，一对N型源极/漏极区，一对隧道绝缘层和一对浮动栅极。 硅衬底形成有突起，而浮栅各自位于突起的相对侧壁中的一个上。 多晶硅绝缘层各自形成在一个浮动栅极上。 控制门通过栅极绝缘层面向突起的顶部。 N型区域形成在突起的每一侧上，并与其邻接的源极/漏极区域接触。 单元晶体管降低了所需的写入电压，拓宽了当前窗口，并增强了对带内隧道效应的阻力。

公开(公告)号：US06768093B2

公开(公告)日：2004-07-27

申请号：US10238638

申请日：2002-09-11

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: H01J4014

CPC classification number: H01L27/14609 ,  H01L27/14623 ,  H01L27/14643 ,  H04N5/374

Abstract: Disclosed is a solid state imaging device, comprising a unit pixel 101 including a photo diode 111 and a MOS transistor 112 for optical signal detection provided with a high-density buried layer 25 for storing optically generated charges generated by light irradiation in the photo diode 111, a vertical scanning signal driving scanning circuit 102 for outputting a scanning signal to a gate electrode 19, and a voltage boost scanning circuit 108 for outputting a boosted voltage higher than a power source voltage to a source region 16. In this case, a boosted voltage is applied from the voltage boost scanning circuit 108 to the source region 16, and the optically generated charges stored in the high-density buried layer 25 are swept out from the high-density buried layer 25 by a source voltage and a gate voltage risen by the boosted voltage.

Abstract translation: 公开了一种固态成像装置，其包括单元像素101，其包括光电二极管111和用于光信号检测的MOS晶体管112，其具有用于存储光电二极管111中由光照射产生的光学产生的电荷的高密度掩埋层25 ，用于向栅极电极19输出扫描信号的垂直扫描信号驱动扫描电路102以及用于将高于电源电压的升压电压输出到源极区域16的升压扫描电路108.在这种情况下， 从升压扫描电路108向源极区域16施加电压，并且通过源极电压和栅极电压上升从高密度掩埋层25扫出存储在高密度掩埋层25中的光学产生的电荷 通过升压电压。

公开(公告)号：US06747264B2

公开(公告)日：2004-06-08

申请号：US10074227

申请日：2002-02-14

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: H01J4014

CPC classification number: H04N5/361 ,  H01L27/14609 ,  H03G3/3084 ,  H04N5/335

Abstract: A solid-state imaging device is provided, which is capable of increasing an S/N ratio while enhancing a dynamic range, when a photoelectric signal is converted into a digital signal. This solid-state imaging device comprises: a plurality of photoelectric conversion devices arrayed in rows and columns, each of the photoelectric conversion devices converting an optical signal into an electric signal and outputting a first signal voltage; a difference signal generation circuit provided for each column, for sequentially inputting the first signal voltage and a second signal voltage obtained by initializing the photoelectric conversion devices, thereafter converting the first signal voltage and the second signal voltage into charges, generating a difference signal therebetween, and then outputting the difference signal after adjusting a gain according to a level of the difference signal; and an analog/digital conversion circuit connected to the output of the difference signal generation circuit.

Abstract translation: 提供了一种固态成像装置，当光电信号被转换为数字信号时，能够增加S / N比，同时增强动态范围。 该固态成像装置包括：以行和列排列的多个光电转换装置，每个光电转换装置将光信号转换为电信号并输出​​第一信号电压; 为每列设置的差分信号生成电路，用于依次输入第一信号电压和通过初始化光电转换装置获得的第二信号电压，之后将第一信号电压和第二信号电压转换为电荷，在其间产生差分信号， 然后根据差分信号的电平调整增益后输出差分信号; 以及连接到差分信号发生电路的输出的模拟/数字转换电路。

公开(公告)号：US06538925B2

公开(公告)日：2003-03-25

申请号：US09984190

申请日：2001-10-29

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: G11C1134

CPC classification number: H01L27/11521 ,  H01L27/115

Abstract: The present invention relates to a dual bit nonvolatile programmable read/write memory containing a semiconductor memory element having one conductivity type semiconductor substrate including at least one convex portion. A pair of opposite conductivity source/drain regions are formed on a surface of the semiconductor substrate an opposing sides of the convex portion, and a first insulating film covers the upper surface of the convex portion. Second insulating films cover the side surfaces of the convex portion and the source/drain regions. A pair of floating gates abut opposing side surfaces of the convex portion and the source/drain regions through the second insulating films. Third insulating films are formed on the floating gates. A control gate covers the upper surface of the convex portion through the first insulating film and the floating gates through the third insulating films.

Abstract translation: 本发明涉及一种包含半导体存储元件的双位非易失性可编程读/写存储器，其具有包括至少一个凸部的一导电型半导体衬底。 在半导体衬底的表面上形成一对相反的导电源极/漏极区域，该凸起部分的相对侧面，并且第一绝缘膜覆盖凸部的上表面。 第二绝缘膜覆盖凸部和源极/漏极区的侧表面。 一对浮动栅极通过第二绝缘膜与凸起部分和源极/漏极区域相对的侧表面相邻。 在浮栅上形成第三绝缘膜。 控制栅极通过第一绝缘膜和通过第三绝缘膜的浮栅覆盖凸部的上表面。

公开(公告)号：US06051857A

公开(公告)日：2000-04-18

申请号：US192529

申请日：1998-11-17

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: H01L27/146 ,  H04N5/355 ,  H01L31/062 ,  H01L31/113

CPC classification number: H04N5/35518 ,  H01L27/14609 ,  H01L27/14679

Abstract: The present invention is a method for detecting photo signals using an imaging device, comprising steps of photo-generating holes in a well region 15 of a photo-diode by a signal light, transferring the photo-generated holes through a bulk of the well region 15 to a heavily doped buried layer 25 which is formed in the well region 15 near a source region 16 by doping that region with impurity heavier than the well region (15) of an insulated gate FET, storing the photo-generated holes in the heavily doped buried layer 25 to thereby change the threshold of the FET corresponding to the amount of the photo-generated charge, and reading the change in the threshold as the amount of signal light received by the photo-sensor.

公开(公告)号：US5568249A

公开(公告)日：1996-10-22

申请号：US229818

申请日：1994-04-19

Applicant: Kazuo Kawamura ,  Jun Hasegawa ,  Takashi Miida

Inventor： Kazuo Kawamura ,  Jun Hasegawa ,  Takashi Miida

IPC: G01C3/06 ,  G01S11/12 ,  G02B7/32 ,  G02B7/34 ,  G06T7/60 ,  G01C3/08

CPC classification number: G01S11/12 ,  G02B7/32

Abstract: A phase difference detection type rangefinder is provided which calculates a distance value of each subject of two or more subjects at different distances. The rangefinder has a correlation calculation unit for calculating a correlation factor between images of a same subject focussed on a base photosensor and a reference photosensor, a second order differentiation unit for calculating second order differential values of correlation factors calculated by the correlation calculation unit, a second order differential value comparison unit for selecting a maximum second order differential value from the second order differential values calculated by the second order differentiation unit, a three-point interpolation unit for calculating an interpolation value through three-point interpolation using the maximum second order differential value and two second order differential values having the phases before and after the phase of the maximum second order differential value, and a distance value calculation unit for calculating a distance value from the phase of the maximum second order differential value and the interpolation value.

Abstract translation: 提供一种相位差检测型测距仪，其计算不同距离的两个或更多个被摄体的每个被摄体的距离值。 测距仪具有相关计算单元，用于计算聚焦在基础光电传感器上的相同对象的图像与参考光电传感器之间的相关因子;二阶微分单元，用于计算由相关计算单元计算的相关因子的二阶微分值， 二阶微分值比较单元，用于从由二阶微分单元计算的二阶微分值中选择最大二阶微分值;三点插值单元，用于通过使用最大二阶微分的三点插值来计算插补值 以及具有在最大二阶微分值的相位之前和之后的相位的两个二阶微分值，以及距离值计算单元，用于根据最大二阶微分值和内插值的相位来计算距离值。

公开(公告)号：US5115155A

公开(公告)日：1992-05-19

申请号：US685773

申请日：1991-04-16

Applicant: Takashi Miida ,  Yoshimitsu Kudoh ,  Hiedki Mutoh

Inventor： Takashi Miida ,  Yoshimitsu Kudoh ,  Hiedki Mutoh

IPC: H01L21/339 ,  G11C19/28 ,  G11C27/04 ,  H01L29/762 ,  H03M1/66

CPC classification number: G11C19/285 ,  G11C27/04

Abstract: A charge-coupled device (CCD) delay line having a temperature compensation circuit capable of compensating for temperature variations for providing an accurate and consistent delay of an input signal. The temperature compensation circuit includes first and second registers for transferring charges, and a sample-and-hold circuit connected between outputs of each register and two inputs of a differential amplifier. The differential amplifier supplies a signal which corresponds to temperature variations to properly bias the input signal.

Abstract translation: 一种具有温度补偿电路的电荷耦合器件（CCD）延迟线，其能够补偿温度变化，以提供输入信号的精确和一致的延迟。 温度补偿电路包括用于传送电荷的第一和第二寄存器，以及连接在每个寄存器的输出和差分放大器的两个输入端之间的采样和保持电路。 差分放大器提供对应于温度变化的信号以适当地偏置输入信号。

公开(公告)号：US5038214A

公开(公告)日：1991-08-06

申请号：US321787

申请日：1989-03-10

Applicant: Takashi Miida

Inventor： Takashi Miida

IPC: H04N5/232 ,  H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/378

CPC classification number: H04N5/23212 ,  H04N5/353 ,  H04N5/3692

Abstract: A peak level detecting apparatus for image sensors by which the maximum light value of a remote object is detected effectively utilizing the dynamic range of image sensors. The peak level detecting apparatus realizes a detection of the remote object patterns without any saturation in photoelectric devices by adjusting the exposure time with the detection of induced signal change in at least one of the photoelectric devices reaching the predetermined peak level, in order to improve the dynamic range and the signal to noise ratio.

Abstract translation: 一种用于图像传感器的峰值电平检测装置，利用图像传感器的动态范围有效地检测远程物体的最大光值。 峰值电平检测装置通过在达到预定峰值电平的至少一个光电装置中的感应信号变化的检测来调节曝光时间来实现对光电装置的任何饱和度的远程物体图形的检测，以便改善 动态范围和信噪比。