公开(公告)号：US08901622B2

公开(公告)日：2014-12-02

申请号：US13038803

申请日：2011-03-02

申请人： Chiharu Ota ,  Hiroshi Kono ,  Kazuto Takao ,  Takashi Shinohe

发明人： Chiharu Ota ,  Hiroshi Kono ,  Kazuto Takao ,  Takashi Shinohe

IPC分类号： H01L29/80 ,  H01L31/112 ,  H01L23/62 ,  H01L29/06 ,  H01L29/16 ,  H01L29/868 ,  H01L29/872

CPC分类号： H01L29/0615 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor device according to an embodiment includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type, a first electrode and a second electrode. The first semiconductor region is formed on at least a part of the first semiconductor layer formed on the semiconductor substrate. The second semiconductor region is formed on another part of the first semiconductor layer to reach an inside of the first semiconductor layer and having an impurity concentration higher than that of the first semiconductor region. The first electrode is formed on the second semiconductor region and a third semiconductor regions formed in a part of the first semiconductor region. The second electrode is formed to be in contact with a rear surface of the semiconductor substrate.

摘要翻译： 根据实施例的半导体器件包括第一导电类型的半导体衬底，第一导电类型的第一半导体层，第二导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一电极 和第二电极。 第一半导体区域形成在形成在半导体衬底上的第一半导体层的至少一部分上。 第二半导体区域形成在第一半导体层的另一部分上，以到达第一半导体层的内部，并且其杂质浓度高于第一半导体区域的杂质浓度。 第一电极形成在第二半导体区域上，第三半导体区域形成在第一半导体区域的一部分中。 第二电极形成为与半导体衬底的后表面接触。

公开(公告)号：US08686437B2

公开(公告)日：2014-04-01

申请号：US13601408

申请日：2012-08-31

申请人： Hiroshi Kono ,  Takashi Shinohe ,  Takuma Suzuki ,  Johji Nishio

发明人： Hiroshi Kono ,  Takashi Shinohe ,  Takuma Suzuki ,  Johji Nishio

IPC分类号： H01L29/15

CPC分类号： H01L21/0465 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66477 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7827

摘要： According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration.

摘要翻译： 根据一个实施例，半导体器件包括第一，第二，第三，第四和第五半导体区域，绝缘膜，控制电极以及第一和第二电极。 第一，第二，第三，第四和第五半导体区域包括碳化硅。 第一半导体区域具有第一杂质浓度，并且具有第一部分。 第二半导体区域设置在第一半导体区域上。 第三半导体区域设置在第二半导体区域上。 第四半导体区域设置在第一部分和第二半导体区域之间。 第四半导体区域设置在第一部分和第三半导体区域之间。 第五半导体区域包括设置在第一部分和第二半导体区域之间的第一区域，并且具有高于第一杂质浓度的第二杂质浓度。

公开(公告)号：US20130248880A1

公开(公告)日：2013-09-26

申请号：US13601457

申请日：2012-08-31

申请人： Keiko ARIYOSHI ,  Takuma Suzuki ,  Hiroshi Kono ,  Takashi Shinohe

发明人： Keiko ARIYOSHI ,  Takuma Suzuki ,  Hiroshi Kono ,  Takashi Shinohe

IPC分类号： H01L29/788 ,  H01L29/66

CPC分类号： H01L29/7889 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66825 ,  H01L29/7813

摘要： According to one embodiment, a semiconductor device includes a first, a second, a third, and a fourth semiconductor region, a control electrode, a floating electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on the second region and contains silicon carbide. The fourth region is provided on the third region and contains silicon carbide. The control electrode is provided in a trench formed in the fourth, the third, and the second region. The floating electrode is provided between the control electrode and a bottom surface of the trench. The insulating film is provided between the trench and the control electrode, between the trench and the floating electrode, and between the control electrode and the floating electrode.

摘要翻译： 根据一个实施例，半导体器件包括第一，第二，第三和第四半导体区域，控制电极，浮置电极和绝缘膜。 第一区域包含碳化硅。 第二区域设置在第一区域上并且包含碳化硅。 第三区域设置在第二区域上并且包含碳化硅。 第四区域设置在第三区域并且包含碳化硅。 控制电极设置在形成在第四，第三和第二区域中的沟槽中。 浮置电极设置在控制电极和沟槽的底表面之间。 绝缘膜设置在沟槽和控制电极之间，沟槽和浮动电极之间以及控制电极和浮动电极之间。

公开(公告)号：US08135528B2

公开(公告)日：2012-03-13

申请号：US12278455

申请日：2007-05-24

申请人： Toru Takenaka ,  Hiroshi Kono ,  Takayuki Toyoshima ,  Hiroyuki Urabe

发明人： Toru Takenaka ,  Hiroshi Kono ,  Takayuki Toyoshima ,  Hiroyuki Urabe

IPC分类号： B60T8/24 ,  B62D6/00

CPC分类号： B62D6/002 ,  B60T8/17552 ,  B60T2230/02 ,  B60T2260/02 ,  B60T2270/86 ,  B60W10/04 ,  B60W10/12 ,  B60W10/18 ,  B60W50/06 ,  B60W2050/0028 ,  B60W2050/0033 ,  B62D6/003

摘要： An actual vehicle actuator operation control input and a model operation control input are determined by an FB distribution law such that the difference between a reference state amount determined in a vehicle model and an actual state amount of an actual vehicle approximates zero, and then an actuator device of the actual vehicle and the vehicle model are operated on the basis of the control inputs. The value of a parameter of the vehicle model set according to an actual vehicle motional state such that the attenuation property of a reference state amount when a drive manipulated variable is changed is higher than the attenuation property of an actual state amount. Accordingly, the actual vehicle actuator device is properly controlled independently of an actual vehicle motional state such that a state amount related to an actual vehicle motion approximates a vehicle state amount on a dynamic characteristic model.

摘要翻译： 实际的车辆致动器操作控制输入和模型操作控制输入由FB分布定律确定，使得在车辆模型中确定的参考状态量与实际车辆的实际状态量之间的差接近于零，然后致动器 实际车辆的装置和车辆模型基于控制输入进行操作。 根据实际车辆运动状态设定的车辆模型的参数值，使得当驾驶操作变量改变时参考状态量的衰减特性高于实际状态量的衰减特性。 因此，实际的车辆执行器装置被独立于实际车辆运动状态适当地控制，使得与实际车辆运动相关的状态量近似于动态特性模型上的车辆状态量。

公开(公告)号：US20120056198A1

公开(公告)日：2012-03-08

申请号：US13038803

申请日：2011-03-02

申请人： Chiharu OTA ,  Hiroshi Kono ,  Kazuto Takao ,  Takashi Shinohe

发明人： Chiharu OTA ,  Hiroshi Kono ,  Kazuto Takao ,  Takashi Shinohe

IPC分类号： H01L29/872 ,  H01L21/329

CPC分类号： H01L29/0615 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor device according to an embodiment includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type, a first electrode and a second electrode. The first semiconductor region is formed on at least a part of the first semiconductor layer formed on the semiconductor substrate. The second semiconductor region is formed on another part of the first semiconductor layer to reach an inside of the first semiconductor layer and having an impurity concentration higher than that of the first semiconductor region. The first electrode is formed on the second semiconductor region and a third semiconductor regions formed in a part of the first semiconductor region. The second electrode is formed to be in contact with a rear surface of the semiconductor substrate.

摘要翻译： 根据实施例的半导体器件包括第一导电类型的半导体衬底，第一导电类型的第一半导体层，第二导电类型的第一半导体区域，第二导电类型的第二半导体区域，第一电极 和第二电极。 第一半导体区域形成在形成在半导体衬底上的第一半导体层的至少一部分上。 第二半导体区域形成在第一半导体层的另一部分上，以到达第一半导体层的内部，并且其杂质浓度高于第一半导体区域的杂质浓度。 第一电极形成在第二半导体区域上，第三半导体区域形成在第一半导体区域的一部分中。 第二电极形成为与半导体衬底的后表面接触。

公开(公告)号：US20120037922A1

公开(公告)日：2012-02-16

申请号：US13203341

申请日：2010-01-06

申请人： Hiroshi Kono ,  Takashi Shinohe ,  Makoto Mizukami

发明人： Hiroshi Kono ,  Takashi Shinohe ,  Makoto Mizukami

IPC分类号： H01L29/161 ,  H01L21/331

CPC分类号： H01L29/7802 ,  H01L21/0465 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/66325 ,  H01L29/66477 ,  H01L29/7393 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/78 ,  H01L29/7813

摘要： The invention provides an ultra-low-on-resistance, excellent-reliability semiconductor device that can finely be processed using SiC and a semiconductor device producing method. A semiconductor device includes: a silicon carbide substrate; a first-conductive-type first silicon carbide layer provided on a first principal surface of the silicon carbide substrate; a second-conductive-type first silicon carbide region formed at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region formed at a surface of the first silicon carbide region; a second-conductive-type third silicon carbide region formed below the second silicon carbide region; a trench piercing through the second silicon carbide region to reach the third silicon carbide region; a gate insulating film; a gate electrode; an interlayer insulating film with which the gate electrode is covered; a first electrode that is formed on the second silicon carbide region and the interlayer insulating film in a side surface of the trench while containing a metallic element selected from a group consisting of Ni, Ti, Ta, Mo, and W; a second electrode that is formed on the third silicon carbide region in a bottom portion of the trench and the first electrode while containing Al; a first main electrode formed on the second electrode; and a second main electrode formed on a second principal surface of the silicon carbide substrate.

摘要翻译： 本发明提供可以使用SiC和半导体器件制造方法精细加工的超低导通电阻，优异可靠性的半导体器件。 半导体器件包括：碳化硅衬底; 设置在所述碳化硅衬底的第一主表面上的第一导电型第一碳化硅层; 形成在所述第一碳化硅层的表面的第二导电型第一碳化硅区; 形成在所述第一碳化硅区域的表面处的第一导电型第二碳化硅区域; 形成在所述第二碳化硅区域下方的第二导电型第三碳化硅区域; 穿过所述第二碳化硅区域的沟槽到达所述第三碳化硅区域; 栅极绝缘膜; 栅电极; 覆盖栅电极的层间绝缘膜; 形成在第二碳化硅区域上的第一电极和沟槽侧表面中的层间绝缘膜，同时含有选自Ni，Ti，Ta，Mo和W的金属元素; 第二电极，其形成在所述沟槽的底部中的所述第三碳化硅区域和所述第一电极同时含有Al; 形成在第二电极上的第一主电极; 以及形成在所述碳化硅衬底的第二主表面上的第二主电极。

公开(公告)号：US08086383B2

公开(公告)日：2011-12-27

申请号：US12092003

申请日：2006-12-21

申请人： Toru Takenaka ,  Hiroshi Kono ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Shuji Shiraishi ,  Yukihiro Orimoto

发明人： Toru Takenaka ,  Hiroshi Kono ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Shuji Shiraishi ,  Yukihiro Orimoto

IPC分类号： B60T7/12

CPC分类号： B62D6/04 ,  B60T8/17552 ,  B60T8/17555 ,  B60T2230/02 ,  B60T2260/09 ,  B60T2270/86 ,  B60W10/04 ,  B60W10/10 ,  B60W10/18 ,  B60W10/20 ,  B60W40/064 ,  B60W40/101 ,  B60W50/06 ,  B60W2050/0028 ,  B60W2050/0033 ,  B60W2050/0034 ,  B62D6/003

摘要： A control input for operating an actual vehicle actuator and a control input for operating a vehicle model are determined by an FB distribution law based on a difference between a reference state amount determined by a vehicle model and an actual state amount of an actual vehicle such that the state amount error is approximated to zero, and then an actuator device of the actual vehicle and the model vehicle are operated based on the control inputs. The FB distribution law determines a control input for operating the model such that a state amount error is approximated to zero while restraining a predetermined restriction object amount from deviating from a permissible range. A vehicle control device capable of enhancing robustness against disturbance factors or their changes while performing operation control of actuators that is as suited to behaviors of an actual vehicle as possible is provided.

摘要翻译： 用于操作实际车辆致动器的控制输入和用于操作车辆模型的控制输入由FB分布定律基于由车辆模型确定的参考状态量与实际车辆的实际状态量之间的差异来确定，使得 状态量误差近似为零，然后基于控制输入来操作实际车辆和模型车辆的致动器装置。 FB分配规则确定用于操作模型的控制输入，使得状态量误差近似为零，同时限制预定的限制对象量偏离允许范围。 提供一种车辆控制装置，其能够在执行适合于实际车辆的行为的执行器的操作控制的同时增强对干扰因素或其变化的鲁棒性。

公开(公告)号：US08050822B2

公开(公告)日：2011-11-01

申请号：US12095403

申请日：2006-12-21

申请人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

发明人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

IPC分类号： G05D1/00 ,  B60R22/00 ,  G06F7/70 ,  B60T8/60

CPC分类号： B60T8/1755 ,  B60T2210/12 ,  B60T2230/02 ,  B60W40/064 ,  B60W40/101 ,  B60W2050/0033 ,  B60W2050/0034 ,  B60W2520/20

摘要： A driving/braking force manipulation control input of a k-th wheel, which denotes one or more specific wheels among a plurality of wheels of a vehicle, is determined such that a required condition concerning a relationship among a road surface reaction force that may act from a road surface on the k-th wheel on the basis of the detected values or estimated values of a road surface reaction force and a friction characteristic of the k-th wheel, a feedback control input related to the driving/braking force of the k-th wheel for bringing a difference between a state amount of the vehicle and a reference state amount close to zero, a driving/braking force feedforward control input based on a drive manipulated variable supplied by a driver of the vehicle, and a k-th wheel driving/braking force manipulation control input is satisfied.

摘要翻译： 确定表示车辆的多个车轮中的一个以上的特定车轮的第k个车轮的驾驶/制动力操纵控制输入，使得能够起作用的路面反作用力之间的关系的要求条件 基于第k轮的检测值或路面反作用力的估计值和第k轮的摩擦特性，从第k轮的路面，与第k轮的驱动/制动力相关的反馈控制输入 第k轮，用于使车辆的状态量与基准状态量接近零之间的差;基于由车辆的驾驶员提供的驾驶操纵变量的驾驶/制动力前馈控制输入;以及k- 满足第三轮驱动/制动力操纵控制输入。

公开(公告)号：US20090319114A1

公开(公告)日：2009-12-24

申请号：US12095397

申请日：2006-12-21

申请人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

发明人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

IPC分类号： B60W30/02 ,  B60W10/04 ,  B60W10/10 ,  B60W10/18 ,  B60W10/20

CPC分类号： B62D6/003 ,  B60T8/1755 ,  B60T2270/86 ,  B60W10/04 ,  B60W10/10 ,  B60W10/18 ,  B60W50/06 ,  B60W2050/0028 ,  B60W2050/0033 ,  B60W2050/0034 ,  B60Y2200/12

摘要： An FB distribution rule 20 determines an actual vehicle actuator operation control input and a vehicle model operation control input such that a difference between a reference state amount determined by a vehicle model 16 and an actual state amount of an actual vehicle 1 (a state amount error) approximates to zero, and the control inputs are used to operate an actuator device 3 of the actual vehicle 1 and the vehicle model 16. In the FB distribution law 20, when an actual vehicle feedback required amount based on the state amount error exists in a dead zone, then an actual vehicle actuator operation control input is determined by using the required amount as a predetermined value. A vehicle model manipulated variable control input is determined such that a state amount error is brought close to zero, independently of whether an actual vehicle feedback required amount exists in a dead zone. This enhances linearity of a control system and also enhances the robustness against disturbance factors or changes therein while carrying out operation control of an actuator that suits a behavior of an actual vehicle as much as possible.

摘要翻译： FB分配规则20确定实际车辆致动器操作控制输入和车辆模型操作控制输入，使得由车辆型号16确定的基准状态量与实际车辆1的实际状态量之间的差（状态量误差 ）近似为零，并且控制输入用于操作实际车辆1和车辆模型16的致动器装置3.在FB分配规则20中，当基于状态量误差的实际车辆反馈所需量存在于 死区，则通过使用所需量作为预定值来确定实际车辆致动器操作控制输入。 确定车辆模型操纵变量控制输入，使得状态量误差接近于零，而与在死区中是否存在实际车辆反馈需求量无关。 这提高了控制系统的线性度，并且在尽可能地执行适合实际车辆的行为的致动器的操作控制的同时，增强了抗干扰因素或其变化的鲁棒性。

公开(公告)号：US20090012669A1

公开(公告)日：2009-01-08

申请号：US12095406

申请日：2006-12-21

申请人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

发明人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

IPC分类号： B60W30/02

CPC分类号： B60T8/17552 ,  B60T2230/02 ,  B60W10/04 ,  B60W10/10 ,  B60W10/184 ,  B60W10/20 ,  B60W50/06 ,  B60W2050/0012 ,  B60W2050/0028 ,  B60W2050/0033 ,  B60W2050/0034 ,  B60Y2200/12

摘要： A driving/braking force manipulation control input of a k-th wheel, which denotes one or more specific wheels among a plurality of wheels of a vehicle, is determined such that a required condition concerning a relationship among a road surface reaction force that may act from a road surface on the k-th wheel on the basis of the detected values or estimated values of a side slip angle and a friction characteristic of the k-th wheel, a feedback control input related to the driving/braking force of the k-th wheel for bringing a difference between a state amount of the vehicle and a reference state amount close to zero, a driving/braking force feedforward control input based on a drive manipulated variable supplied by a driver of the vehicle, and a k-th wheel driving/braking force manipulation control input is satisfied. This arrangement makes it possible to properly control a motion of an actual vehicle to a desired motion while properly considering the characteristics of a road surface reaction force acting from a road surface on a wheel.

摘要翻译： 确定表示车辆的多个车轮中的一个以上的特定车轮的第k个车轮的驾驶/制动力操纵控制输入，使得能够起作用的路面反作用力之间的关系的要求条件 基于第k轮的侧滑角和摩擦特性的检测值或估计值从第k轮的路面，与k的驱动/制动力相关的反馈控制输入 用于使车辆的状态量与接近零的基准状态量之间的差异，基于由车辆的驾驶员提供的驱动操作量的驱动/制动力前馈控制输入和第k 轮驱动/制动力操纵控制输入被满足。 这种布置使得可以适当地考虑从车轮上的路面起作用的路面反作用力的特性来适当地控制实际车辆的运动到期望的运动。