公开(公告)号：US20060043442A1

公开(公告)日：2006-03-02

申请号：US11214846

申请日：2005-08-31

申请人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

发明人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/035281 ,  H01L31/03529

摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate,voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

摘要翻译： 本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。 该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。

公开(公告)号：US08252614B2

公开(公告)日：2012-08-28

申请号：US12780811

申请日：2010-05-14

申请人： Toru Koizumi ,  Akira Okita ,  Tetsuya Itano ,  Sakae Hashimoto ,  Ryuichi Mishima

发明人： Toru Koizumi ,  Akira Okita ,  Tetsuya Itano ,  Sakae Hashimoto ,  Ryuichi Mishima

IPC分类号： H01L21/00 ,  H01L21/4763

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14643

摘要： At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

摘要翻译： 至少一个示例性实施例涉及包括至少一个抗反射层和/或非矩形形状的布线层横截面的固态图像传感器，以减少暗电流和1 / f噪声。

公开(公告)号：US07994552B2

公开(公告)日：2011-08-09

申请号：US12041738

申请日：2008-03-04

申请人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

发明人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/035281 ,  H01L31/03529

摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

摘要翻译： 本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。 该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。

公开(公告)号：US20100219497A1

公开(公告)日：2010-09-02

申请号：US12779471

申请日：2010-05-13

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

IPC分类号： H01L31/101

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H04N5/335

摘要： The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

摘要翻译： 本发明涉及一种光电转换装置，其中包括用于将光转换为信号电荷的光电转换装置的像素和包括用于处理信号电荷的电路的外围电路的像素， 相同的衬底，包括：用于形成光电区域的第一导电类型的第一半导体区域，第一半导体区域形成在第二导电类型的第二半导体区域中; 以及第一导电类型的第三半导体区域和用于形成外围电路的第二导电类型的第四半导体区域，所述第三和第四半导体区域形成在所述第二半导体区域中; 其中，所述第一半导体区域的杂质浓度高于所述第三半导体区域的杂质浓度。

公开(公告)号：US07679116B2

公开(公告)日：2010-03-16

申请号：US12326138

申请日：2008-12-02

申请人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

发明人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2

摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C1，与第二杂质区域中的杂质浓度的峰值对应的浓度C2和与第三杂质区域中的杂质浓度的峰值相对应的浓度C3 满足以下关系：C2

公开(公告)号：US07473948B2

公开(公告)日：2009-01-06

申请号：US11941675

申请日：2007-11-16

申请人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

发明人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

IPC分类号： H01L29/06

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2

摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C1，与第二杂质区域中的杂质浓度的峰值对应的浓度C2和与第三杂质区域中的杂质浓度的峰值相对应的浓度C3 满足以下关系：<？in-line-formula description =“In-line Formulas”end =“lead”？> C2

公开(公告)号：US20080054388A1

公开(公告)日：2008-03-06

申请号：US11844545

申请日：2007-08-24

申请人： Yasushi Nakata ,  Shigeru Nishimura ,  Ryuichi Mishima

发明人： Yasushi Nakata ,  Shigeru Nishimura ,  Ryuichi Mishima

IPC分类号： H01L31/0232 ,  H01L31/0216

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636

摘要： A photoelectric conversion device is disclosed. The photoelectric conversion device includes a semiconductor substrate having a plurality of photoelectric converters, a multilayer wiring structure arranged on the semiconductor substrate, and a planarized layer arranged on the multilayer wiring structure. The multilayer wiring structure includes a first wiring layer, an interlayer insulation film arranged to cover the first wiring layer, and a second wiring layer serving as a top wiring layer arranged on the interlayer insulation film. The planarized layer covers the interlayer insulation film and the second wiring layer. The second wiring layer is thinner than the first wiring layer.

摘要翻译： 公开了一种光电转换装置。 光电转换装置包括具有多个光电转换器的半导体衬底，布置在半导体衬底上的多层布线结构以及布置在多层布线结构上的平坦化层。 多层布线结构包括第一布线层，布置成覆盖第一布线层的层间绝缘膜和布置在层间绝缘膜上的用作顶部布线层的第二布线层。 平坦化层覆盖层间绝缘膜和第二布线层。 第二布线层比第一布线层薄。

公开(公告)号：US20080036019A1

公开(公告)日：2008-02-14

申请号：US10599427

申请日：2005-04-27

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

IPC分类号： H01L27/14

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H04N5/335

摘要： The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

摘要翻译： 本发明涉及一种光电转换装置，其中包括用于将光转换为信号电荷的光电转换装置的像素和包括用于处理信号电荷的电路的外围电路的像素， 相同的衬底，包括：用于形成光电区域的第一导电类型的第一半导体区域，第一半导体区域形成在第二导电类型的第二半导体区域中; 以及第一导电类型的第三半导体区域和用于形成外围电路的第二导电类型的第四半导体区域，第三和第四半导体区域形成在第二半导体区域中; 其中，所述第一半导体区域的杂质浓度高于所述第三半导体区域的杂质浓度。