摘要:
In order to provide a suspension, a head suspension assembly, and a disk drive apparatus that can contribute to an increase of record and playback reliability, holes 3c in ribs 3b of the head suspension assembly 3 are provided. This design decreases the displacement of a head slider 2 that is caused by Karman vortex streets occurring near the ribs 3b in company with the rotation of the magnetic disk 1.
摘要翻译:为了提供可以有助于提高记录和播放可靠性的悬架,磁头悬架组件和磁盘驱动装置, 3 BOLD> c < 头部悬挂组件 3 BOLD> 3 BOLD> b BAL> >提供。 这种设计减少了由靠近肋骨 3 BOLD> 2 BOLD> > b ITALIC> ,随着磁盘 1的旋转。 BOLD> PTEXT>
摘要:
A semiconductor processing apparatus for processing a semiconductor substrate includes: (i) a vacuum-exhausted chamber; (ii) a susceptor which is provided within the chamber and which holds the substrate and has at least three through-holes; (iii) substrate-supporting members which are supported within the through-holes and which support the substrate; (iv) a pin, one end of which is inserted into the inner part of a the substrate-supporting member; and (v) a pin-fixing structure provided at the base of the chamber for fixing the other end of the pin. When the susceptor moves downward, the pin pushes up the substrate-supporting member, and the substrate is supported in midair by the substrate-supporting members apart from the susceptor.
摘要:
An apparatus for forming a thin film such as a silicon oxide film on a surface of a substrate such as a semiconductor substrate includes: a reaction chamber having an interior where the substrate is placed when in use; a liquid reaction material supplier for supplying a given amount of liquid reaction material such as TEOS for forming a thin film on the substrate; and a mist-forming device for forming mist of the liquid reaction material and spraying the liquid reaction material onto a surface of the substrate for forming a thin film thereon. The mist-forming device is disposed upstream of the reaction chamber and downstream of the liquid reaction material supplier. Neither of the mist-forming device nor the liquid reaction material supplier includes a heating device for heating the liquid reaction material.
摘要:
A method and system for reducing positioning noise in a data storage system are provided. An access device is positioned over a data storage medium using a stream of bursts stored on the medium. The bursts are sensed at a frequency determined by the rate at which the medium is moved relative to a sensing device. Output positioning values are provided to position the access device at a frequency higher than the frequency at which the positioning bursts are sensed, and/or at random times. The random times may be calculated as random advances or delays from time points occurring at a fixed frequency.
摘要:
A rigid magnetic recording disk drive includes a vacuum pump attached to the disk drive housing for removing air from within the housing so that the disk drive is operated at a reduced internal gas pressure. The pump motor is controlled by control circuitry that receives an input signal representative of the pressure within the housing to enable the pressure to be maintained within a predetermined reduced pressure range. Because spindle motor current has been directly correlated with internal pressure, a signal representative of the spindle motor current is used as the input to the pump control circuitry. The pump control circuitry also prevents the pump from turning on until the spindle motor has reached its stable operating speed, and from turning on when the disk drive is reading or writing data. Because of the reduced internal pressure the disk drive operates at a significantly higher disk RPM with only a minimal increase in power consumption and without any increase in track misregistration.
摘要:
A mass flow meter includes a housing body having a fluid passageway extending therethrough with a capillary tube communicating with the fluid passageway. The capillary tube is connected through a pair of metallic sleeves mounted on a base member which in turn is fastened to the housing body. A pair of sensor coils is connected to the capillary tube to measure any fluid flow. A metal sensor case is welded airtight to the base member to encapsulate the capillary tube.
摘要:
A plasma CVD device includes a reaction chamber, a remote plasma discharge chamber that is provided remotely from the reaction chamber, and piping that links the reaction chamber and the remote plasma discharge chamber. The remote plasma discharge chamber activates cleaning gas by plasma discharge energy, and the activated cleaning gas is introduced into the inside of the reaction chamber through the piping and changes solid substances that adhere to the inside of the reaction chamber in consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following: (a) the remote plasma discharge chamber generates active species using radio frequency oscillating output energy of a preselected frequency; (b) the piping is made of materials that are not corroded by the active species; or (c) the piping is provided with a through-flow type valve.
摘要:
A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reaction zone. The electric field is generated using low and high frequency RF energy produced by an RF power supply. The RF power supply generates power at an electrode surface used for plasma discharge in the reaction zone. The method further comprises reacting the silicon and carbon source gas to deposit a silicon carbide film on the substrate. The RF power supply generates high energy RF power and low energy RF power during a processing period.
摘要:
A gas-introducing system for plasma CVD and cleaning includes: a showerhead including a top plate with a gas inlet port and a shower plate; a rectifying plate installed in the interior space of the showerhead and dividing the interior space into an upper space and a lower space; a structure for inhibiting inactivation of active species of the activated cleaning gas at the rectifying plate; and a piping unit for connecting the gas inlet port of the showerhead to a remote plasma unit and a reaction gas introduction port.
摘要:
A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes (a) introducing a raw material gas containing silicon, carbon, and hydrogen and an inert gas into a reaction chamber at a predetermined mixture ratio of the raw material gas to the inert gas; (b) applying radio-frequency power at the mixture ratio, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and (c) continuously applying radio-frequency power at a mixture ratio which is reduced from that in step (b), thereby curing the silicon carbide film to give a dielectric constant lower than that of the curable silicon carbide film.