Suspension, head suspension assembly, and disk drive apparatus
    41.
    发明授权
    Suspension, head suspension assembly, and disk drive apparatus 有权
    悬架,头悬挂组件和磁盘驱动装置

    公开(公告)号:US06633456B1

    公开(公告)日:2003-10-14

    申请号:US09430529

    申请日:1999-10-29

    IPC分类号: G11B2121

    CPC分类号: G11B5/4833 G11B5/4826

    摘要: In order to provide a suspension, a head suspension assembly, and a disk drive apparatus that can contribute to an increase of record and playback reliability, holes 3c in ribs 3b of the head suspension assembly 3 are provided. This design decreases the displacement of a head slider 2 that is caused by Karman vortex streets occurring near the ribs 3b in company with the rotation of the magnetic disk 1.

    摘要翻译: 为了提供可以有助于提高记录和播放可靠性的悬架,磁头悬架组件和磁盘驱动装置, 3 c < 头部悬挂组件 3 3 b >提供。 这种设计减少了由靠近肋骨 3 2 > b ,随着磁盘 1的旋转。

    Semiconductor processing apparatus with substrate-supporting mechanism
    42.
    发明授权
    Semiconductor processing apparatus with substrate-supporting mechanism 有权
    具有基板支撑机构的半导体处理装置

    公开(公告)号:US06435798B1

    公开(公告)日:2002-08-20

    申请号:US09544764

    申请日:2000-04-07

    申请人: Kiyoshi Satoh

    发明人: Kiyoshi Satoh

    IPC分类号: B65G4907

    摘要: A semiconductor processing apparatus for processing a semiconductor substrate includes: (i) a vacuum-exhausted chamber; (ii) a susceptor which is provided within the chamber and which holds the substrate and has at least three through-holes; (iii) substrate-supporting members which are supported within the through-holes and which support the substrate; (iv) a pin, one end of which is inserted into the inner part of a the substrate-supporting member; and (v) a pin-fixing structure provided at the base of the chamber for fixing the other end of the pin. When the susceptor moves downward, the pin pushes up the substrate-supporting member, and the substrate is supported in midair by the substrate-supporting members apart from the susceptor.

    摘要翻译: 一种用于处理半导体衬底的半导体处理装置包括:(i)真空排空室; (ii)感受体,其设置在所述室内并且保持所述基板并具有至少三个通孔; (iii)支撑在所述通孔内并支撑所述基板的基板支撑构件; (iv)销,其一端插入到基板支撑构件的内部; 以及(v)设置在所述室的底部处以固定销的另一端的销固定结构。 当基座向下移动时,销向上推动基板支撑构件,并且基板被基座支撑构件远离基座支撑在空中。

    Apparatus and method for forming thin film
    43.
    发明授权
    Apparatus and method for forming thin film 有权
    用于形成薄膜的装置和方法

    公开(公告)号:US06235112B1

    公开(公告)日:2001-05-22

    申请号:US09238015

    申请日:1999-01-26

    申请人: Kiyoshi Satoh

    发明人: Kiyoshi Satoh

    IPC分类号: B05B724

    CPC分类号: C23C16/4408 C23C16/4486

    摘要: An apparatus for forming a thin film such as a silicon oxide film on a surface of a substrate such as a semiconductor substrate includes: a reaction chamber having an interior where the substrate is placed when in use; a liquid reaction material supplier for supplying a given amount of liquid reaction material such as TEOS for forming a thin film on the substrate; and a mist-forming device for forming mist of the liquid reaction material and spraying the liquid reaction material onto a surface of the substrate for forming a thin film thereon. The mist-forming device is disposed upstream of the reaction chamber and downstream of the liquid reaction material supplier. Neither of the mist-forming device nor the liquid reaction material supplier includes a heating device for heating the liquid reaction material.

    摘要翻译: 在诸如半导体衬底的衬底的表面上形成诸如氧化硅膜的薄膜的装置包括:具有内部的反应室,其中衬底在使用时放置; 用于在衬底上提供给定量的液体反应材料如TEOS以形成薄膜的液体反应材料供应器; 以及用于形成液体反应材料的雾并将液体反应材料喷射到用于在其上形成薄膜的基板的表面上的雾化装置。 雾化装置设置在反应室的上游和液体反应材料供应器的下游。 雾化装置和液体反应材料供应商都不包括用于加热液体反应材料的加热装置。

    Increased and randomized output sampling to reduce positioning noise in a data storage system
    44.
    发明授权
    Increased and randomized output sampling to reduce positioning noise in a data storage system 失效
    增加和随机输出采样,以减少数据存储系统中的定位噪声

    公开(公告)号:US06181507B2

    公开(公告)日:2001-01-30

    申请号:US08692164

    申请日:1996-08-05

    IPC分类号: G11B5596

    摘要: A method and system for reducing positioning noise in a data storage system are provided. An access device is positioned over a data storage medium using a stream of bursts stored on the medium. The bursts are sensed at a frequency determined by the rate at which the medium is moved relative to a sensing device. Output positioning values are provided to position the access device at a frequency higher than the frequency at which the positioning bursts are sensed, and/or at random times. The random times may be calculated as random advances or delays from time points occurring at a fixed frequency.

    摘要翻译: 提供了一种用于降低数据存储系统中的定位噪声的方法和系统。 访问设备使用存储在介质上的突发流来定位在数据存储介质上。 以由介质相对于感测装置移动的速率确定的频率感测脉冲串。 提供输出定位值以将访问设备定位在高于感测定位脉冲串的频率的频率处和/或随机时间。 随机时间可以被计算为在固定频率发生的时间点的随机前进或延迟。

    Disk drive with controlled reduced internal pressure
    45.
    发明授权
    Disk drive with controlled reduced internal pressure 有权
    磁盘驱动器具有受控的内部压力降低

    公开(公告)号:US6144178A

    公开(公告)日:2000-11-07

    申请号:US370782

    申请日:1999-08-05

    IPC分类号: G11B33/14 H02P7/00

    CPC分类号: G11B33/1486

    摘要: A rigid magnetic recording disk drive includes a vacuum pump attached to the disk drive housing for removing air from within the housing so that the disk drive is operated at a reduced internal gas pressure. The pump motor is controlled by control circuitry that receives an input signal representative of the pressure within the housing to enable the pressure to be maintained within a predetermined reduced pressure range. Because spindle motor current has been directly correlated with internal pressure, a signal representative of the spindle motor current is used as the input to the pump control circuitry. The pump control circuitry also prevents the pump from turning on until the spindle motor has reached its stable operating speed, and from turning on when the disk drive is reading or writing data. Because of the reduced internal pressure the disk drive operates at a significantly higher disk RPM with only a minimal increase in power consumption and without any increase in track misregistration.

    摘要翻译: 刚性磁记录盘驱动器包括附接到盘驱动器壳体的真空泵,用于从壳体内去除空气,使得盘驱动器以减小的内部气体压力运行。 泵马达由控制电路控制,控制电路接收代表壳体内的压力的输入信号,以使压力保持在预定的减压范围内。 由于主轴电动机电流与内部压力直接相关,因此使用代表主轴电机电流的信号作为泵控制电路的输入。 泵控制电路还防止泵开启,直到主轴电机达到其稳定的运行速度,并且在磁盘驱动器正在读取或写入数据时打开。 由于内部压力降低,磁盘驱动器以明显更高的磁盘RPM运行,功率消耗只有最小的增加,轨道配准不增加。

    Mass flowmeter with hermetically sealed housing
    46.
    发明授权
    Mass flowmeter with hermetically sealed housing 失效
    带密封外壳的质量流量计

    公开(公告)号:US5309762A

    公开(公告)日:1994-05-10

    申请号:US615069

    申请日:1990-11-19

    CPC分类号: G01F1/6847 G01F5/00

    摘要: A mass flow meter includes a housing body having a fluid passageway extending therethrough with a capillary tube communicating with the fluid passageway. The capillary tube is connected through a pair of metallic sleeves mounted on a base member which in turn is fastened to the housing body. A pair of sensor coils is connected to the capillary tube to measure any fluid flow. A metal sensor case is welded airtight to the base member to encapsulate the capillary tube.

    摘要翻译: 质量流量计包括具有通过其延伸穿过的流体通道的壳体主体,毛细管与流体通道连通。 毛细管通过安装在基座构件上的一对金属套筒连接,基座构件又紧固到壳体上。 一对传感器线圈连接到毛细管以测量任何流体流动。 将金属传感器外壳气密地焊接到基座部件以封装毛细管。

    SEMICONDUCTOR PROCESSING WITH A REMOTE PLASMA SOURCE FOR SELF-CLEANING
    47.
    发明申请
    SEMICONDUCTOR PROCESSING WITH A REMOTE PLASMA SOURCE FOR SELF-CLEANING 审中-公开
    具有远程等离子体源的半导体处理自清洁

    公开(公告)号:US20070227554A1

    公开(公告)日:2007-10-04

    申请号:US11758601

    申请日:2007-06-05

    IPC分类号: C25F1/00

    摘要: A plasma CVD device includes a reaction chamber, a remote plasma discharge chamber that is provided remotely from the reaction chamber, and piping that links the reaction chamber and the remote plasma discharge chamber. The remote plasma discharge chamber activates cleaning gas by plasma discharge energy, and the activated cleaning gas is introduced into the inside of the reaction chamber through the piping and changes solid substances that adhere to the inside of the reaction chamber in consequence of film formation, to gaseous substances, thereby cleaning the inside of the reaction chamber. The device is characterized by at least one of the following: (a) the remote plasma discharge chamber generates active species using radio frequency oscillating output energy of a preselected frequency; (b) the piping is made of materials that are not corroded by the active species; or (c) the piping is provided with a through-flow type valve.

    摘要翻译: 等离子体CVD装置包括反应室,远离反应室设置的远程等离子体放电室和连接反应室和远程等离子体放电室的管道。 远程等离子体放电室通过等离子体放电能量激活清洁气体,并且活化的清洁气体通过管道被引入反应室的内部,并且改变由于成膜而附着在反应室内部的固体物质, 从而清洁反应室的内部。 该装置的特征在于以下至少之一:(a)远程等离子体放电室使用预选频率的射频振荡输出能量产生活动物质; (b)管道由不被活性物种腐蚀的材料制成; 或(c)管道设有通流式阀。

    Method of forming silicon carbide films
    48.
    发明授权
    Method of forming silicon carbide films 有权
    形成碳化硅膜的方法

    公开(公告)号:US07238393B2

    公开(公告)日:2007-07-03

    申请号:US10414467

    申请日:2003-04-14

    IPC分类号: B05D1/04

    摘要: A method for depositing a silicon carbide layer onto a substrate comprises providing a silicon and carbon source gas and an inert gas into a reaction zone. The reaction zone contains the substrate. The method further comprises producing an electric field in the reaction zone. The electric field is generated using low and high frequency RF energy produced by an RF power supply. The RF power supply generates power at an electrode surface used for plasma discharge in the reaction zone. The method further comprises reacting the silicon and carbon source gas to deposit a silicon carbide film on the substrate. The RF power supply generates high energy RF power and low energy RF power during a processing period.

    摘要翻译: 将碳化硅层沉积到衬底上的方法包括将硅和碳源气体和惰性气体提供到反应区中。 反应区含有底物。 该方法还包括在反应区中产生电场。 使用由RF电源产生的低频和高频RF能量产生电场。 RF电源在用于反应区域中的等离子体放电的电极表面处产生电力。 该方法还包括使硅和碳源气体反应以在基底上沉积碳化硅膜。 RF电源在处理期间产生高能量RF功率和低能量RF功率。

    Gas-introducing system and plasma CVD apparatus
    49.
    发明申请
    Gas-introducing system and plasma CVD apparatus 有权
    气体导入系统和等离子体CVD装置

    公开(公告)号:US20060090700A1

    公开(公告)日:2006-05-04

    申请号:US11262103

    申请日:2005-10-28

    IPC分类号: C23C16/00 C23F1/00

    摘要: A gas-introducing system for plasma CVD and cleaning includes: a showerhead including a top plate with a gas inlet port and a shower plate; a rectifying plate installed in the interior space of the showerhead and dividing the interior space into an upper space and a lower space; a structure for inhibiting inactivation of active species of the activated cleaning gas at the rectifying plate; and a piping unit for connecting the gas inlet port of the showerhead to a remote plasma unit and a reaction gas introduction port.

    摘要翻译: 用于等离子体CVD和清洁的气体引入系统包括:喷头,其包括具有进气口和喷淋板的顶板; 整流板,其安装在所述喷头的内部空间中,并将所述内部空间分隔成上部空间和下部空间; 用于抑制在整流板处活化的清洁气体的活性物质失活的结构; 以及用于将喷头的气体入口连接到远程等离子体单元和反应气体引入口的管道单元。

    Method of manufacturing silicon carbide film
    50.
    发明授权
    Method of manufacturing silicon carbide film 有权
    制造碳化硅膜的方法

    公开(公告)号:US06919270B2

    公开(公告)日:2005-07-19

    申请号:US10682180

    申请日:2003-10-09

    摘要: A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes (a) introducing a raw material gas containing silicon, carbon, and hydrogen and an inert gas into a reaction chamber at a predetermined mixture ratio of the raw material gas to the inert gas; (b) applying radio-frequency power at the mixture ratio, thereby forming a curable silicon carbide film having a dielectric constant of about 4.0 or higher; and (c) continuously applying radio-frequency power at a mixture ratio which is reduced from that in step (b), thereby curing the silicon carbide film to give a dielectric constant lower than that of the curable silicon carbide film.

    摘要翻译: 通过等离子体CVD在半导体基板上形成碳化硅膜的方法包括:(a)以原料气体与原料气体的预定混合比将含有硅,碳,氢和惰性气体的原料气体引入反应室 惰性气体; (b)以混合比施加射频功率,从而形成介电常数为约4.0以上的可固化碳化硅膜; 和(c)以与步骤(b)相同的混合比率连续地施加射频功率,从而使碳化硅膜固化,得到比可固化碳化硅膜低的介电常数。