摘要:
A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要:
A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要:
A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.
摘要:
The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1 (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).
摘要:
The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1 (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5).
摘要翻译:本发明提供一种高分子化合物,其可以构成光刻胶组合物,其能够具有优异的分辨率,形成具有良好矩形性的精细图案,即使酸产生器产生的酸的酸强弱也能获得良好的抗蚀特性, 并具有良好的灵敏度; 包含该高分子化合物的光致抗蚀剂组合 以及使用光致抗蚀剂组合物的抗蚀剂图案形成方法。 光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含碱溶性基团(i)的高分子化合物,其中碱溶性基团(i)为选自醇羟基,羧基或酚类中的至少一个取代基 羟基,取代基被通过通式(1)表示的酸解离的溶解抑制基团(ⅱ)保护:-CH 2 -OCH 2 n R 1(1)(其中R 1表示含有不多于20个碳的脂环族基团 原子,可以含有氧原子,氮原子,硫原子或卤素原子,n表示0或1〜5的整数。
摘要:
There is provided a positive type resist composition formed by dissolving (A) a resin component with a unit derived from a (meth)acrylate ester in the principal chain, for which the solubility in alkali increases under the action of acid, and (B) an acid generator component which generates acid on exposure, in an organic solvent component (C), wherein the resin component (A) is a copolymer comprising (a1) a unit derived from a (meth)acrylate ester comprising an acid dissociable, dissolution inhibiting group containing a polycyclic group, (a2) a unit derived from a (meth)acrylate ester comprising a lactone containing monocyclic group or polycyclic group, (a3) a unit derived from a (meth)acrylate ester comprising a hydroxyl group containing polycyclic group, and (a4) a unit derived from a (meth)acrylate ester comprising a polycyclic group which is different from the unit (a1), the unit (a2) and the unit (a3). This composition provides a chemically amplified positive type resist composition which displays excellent resolution, enables the depth of focus range of an isolated resist pattern to be improved, and enables the proximity effect to be suppressed.
摘要:
A resist composition including a base component (A) and an acid-generator component (B), the acid-generator component (B) including an acid generator (B1) including a compound represented by general formula (b1-8) shown below (wherein R401 represents an acid dissociable, dissolution inhibiting group; R41 to R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxy group or a hydroxyalkyl group; Q represents a divalent linking group or a single bond; and X− represents an anion) or an acid generator (B1′) including a compound represented by general formula (b1-9) shown below (wherein R402 and R403 each independently represents a hydrogen atom, an alkyl group or a halogenated alkyl group; R404 represents an alkyl group or a halogenated alkyl group, wherein R403 and R404 may be bonded to each other to form a ring structure; and X− represents an anion).
摘要翻译:包含基础组分(A)和酸产生剂组分(B)的抗蚀剂组合物,所述酸产生剂组分(B)包括含有下述通式(b1-8)表示的化合物的酸产生剂(B1)( 其中R401表示酸解离的溶解抑制基团; R 41至R 43各自独立地表示卤素原子,卤代烷基,烷基,乙酰基,烷氧基,羧基或羟烷基; Q表示二价 连接基团或单键; X表示阴离子)或包含下述通式(b1-9)表示的化合物的酸产生剂(B1')(其中R402和R403各自独立地表示氢原子,烷基 基团或卤代烷基; R404表示烷基或卤代烷基,其中R403和R404可以彼此键合以形成环结构;并且X-表示阴离子)。
摘要:
A technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development is provided. Further, a technique to obtain a photoresist composition having excellent storage stability characteristics as a resist solution (storage stability); and a technique to obtain a photoresist composition which reduces the change of sensitivity and resist pattern size after treatment almost completely are provided. A photoresist composition containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) is passed through a first filter 2a equipped with a first membrane having zeta potential of more than −20 mV but no more than 15 mV in distilled water of pH 7.0.
摘要:
There are provided a novel compound represented by a general formula (b1-1) shown below, which is useful as an acid generator for a resist composition and a manufacturing method thereof, a compound useful as a precursor of the novel compound and a manufacturing method thereof, an acid generator, a resist composition and a method of forming a resist pattern. (wherein, R1 represents an aryl group or alkyl group which may contain a substituent group; R3 represents a hydrogen atom or an alkyl group; n1 represents an integer of 0 or 1, and in the case that n1 is 1, R1 and R3 may mutually be bonded to form a ring with a 3- to 7-membered ring structure together with the carbon atom with which R1 is bonded and the carbon atom with which R3 is bonded; A represents a bivalent group which forms a ring with 3- to 7-membered ring structure together with the sulfur atom with which A is bonded, and the ring may contain a substituent group; R2 represents an aromatic group which may contain a substituent group, a linear or branched alkyl group of 1 to 10 carbon atoms which may contain a substituent group, or a linear or branched alkenyl group of 2 to 10 carbon atoms which may contain a substituent group; n represents an integer of 0 or 1; and Y1 represents an alkylene group of 1 to 4 carbon atoms in which hydrogen atoms may be substituted with fluorine atoms.).
摘要:
A resist composition including a base component (A) and an acid-generator component (B), the acid-generator component (B) including an acid generator (B1) including a compound represented by general formula (b1-8) shown below (wherein R401 represents an acid dissociable, dissolution inhibiting group; R41 to R43 each independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxy group or a hydroxyalkyl group; Q represents a divalent linking group or a single bond; and X− represents an anion) or an acid generator (B1′) including a compound represented by general formula (b1-9) shown below (wherein R403 and R403 each independently represents a hydrogen atom, an alkyl group or a halogenated alkyl group; R404 represents an alkyl group or a halogenated alkyl group, wherein R403 and R404 may be bonded to each other to form a ring structure; and X− represents an anion).