Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method
    44.
    发明申请
    Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method 有权
    高分子化合物,包含聚合物化合物的光致抗蚀剂组合物和抗蚀剂图案形成方法

    公开(公告)号:US20080166655A1

    公开(公告)日:2008-07-10

    申请号:US10589681

    申请日:2005-01-28

    摘要: The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1   (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).

    摘要翻译: 本发明提供一种高分子化合物,其可以构成光刻胶组合物,其能够具有优异的分辨率,形成具有良好矩形性的精细图案,即使酸产生器产生的酸的酸强弱也能获得良好的抗蚀特性, 并具有良好的灵敏度; 包含该高分子化合物的光致抗蚀剂组合物; 以及使用光致抗蚀剂组合物的抗蚀剂图案形成方法。 光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含碱溶性基团(i)的高分子化合物,其中碱溶性基团(i)为选自醇羟基,羧基或酚类中的至少一个取代基 羟基,取代基被通过通式(1)表示的酸解离的溶解抑制基团(ii)保护:<?in-line-formula description =“In-line Formulas”end =“lead”? > -CH 2 - - - - - - - - - - - - - - (2) (其中R 1表示含有不多于20个碳原子的脂环族基团,并且可以含有氧原子,氮原子, 硫原子或卤素原子,n表示0或1〜5的整数。

    Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method
    45.
    发明授权
    Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method 有权
    高分子化合物,包含高分子化合物的光致抗蚀剂组合物和抗蚀图案形成方法

    公开(公告)号:US07723007B2

    公开(公告)日:2010-05-25

    申请号:US10589681

    申请日:2005-01-28

    IPC分类号: G03F7/004 C07C61/26 C08F32/08

    摘要: The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1  (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5).

    摘要翻译: 本发明提供一种高分子化合物,其可以构成光刻胶组合物,其能够具有优异的分辨率,形成具有良好矩形性的精细图案,即使酸产生器产生的酸的酸强弱也能获得良好的抗蚀特性, 并具有良好的灵敏度; 包含该高分子化合物的光致抗蚀剂组合 以及使用光致抗蚀剂组合物的抗蚀剂图案形成方法。 光致抗蚀剂组合物和抗蚀剂图案形成方法使用包含碱溶性基团(i)的高分子化合物,其中碱溶性基团(i)为选自醇羟基,羧基或酚类中的至少一个取代基 羟基,取代基被通过通式(1)表示的酸解离的溶解抑制基团(ⅱ)保护:-CH 2 -OCH 2 n R 1(1)(其中R 1表示含有不多于20个碳的脂环族基团 原子,可以含有氧原子,氮原子,硫原子或卤素原子,n表示0或1〜5的整数。

    Positive resist composition and method of forming resist pattern
    46.
    发明授权
    Positive resist composition and method of forming resist pattern 有权
    正型抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号:US06982140B2

    公开(公告)日:2006-01-03

    申请号:US10466172

    申请日:2002-11-29

    IPC分类号: G03F7/004 G03F7/30

    摘要: There is provided a positive type resist composition formed by dissolving (A) a resin component with a unit derived from a (meth)acrylate ester in the principal chain, for which the solubility in alkali increases under the action of acid, and (B) an acid generator component which generates acid on exposure, in an organic solvent component (C), wherein the resin component (A) is a copolymer comprising (a1) a unit derived from a (meth)acrylate ester comprising an acid dissociable, dissolution inhibiting group containing a polycyclic group, (a2) a unit derived from a (meth)acrylate ester comprising a lactone containing monocyclic group or polycyclic group, (a3) a unit derived from a (meth)acrylate ester comprising a hydroxyl group containing polycyclic group, and (a4) a unit derived from a (meth)acrylate ester comprising a polycyclic group which is different from the unit (a1), the unit (a2) and the unit (a3). This composition provides a chemically amplified positive type resist composition which displays excellent resolution, enables the depth of focus range of an isolated resist pattern to be improved, and enables the proximity effect to be suppressed.

    摘要翻译: 提供一种正型抗蚀剂组合物,其通过将(A)树脂组分与主链中衍生自(甲基)丙烯酸酯的单元溶解,其中在碱的作用下碱的溶解度增加,(B) 一种在有机溶剂组分(C)中暴露时产生酸的酸产生剂组分,其中树脂组分(A)是共聚物,其包含(a1)衍生自(甲基)丙烯酸酯的单元,其包含酸解离,溶解抑制 含有多环基团的基团,(a2)由含有内酯单体或多环基团的(甲基)丙烯酸酯衍生的单元,(a3)由含有羟基的多环基团的(甲基)丙烯酸酯衍生的单元, 和(a4)衍生自包含与单元(a1),单元(a2)和单元(a3)不同的多环基团的(甲基)丙烯酸酯的单元。 该组合物提供显示出优异的分辨率的化学放大正型抗蚀剂组合物,能够提高隔离抗蚀剂图案的聚焦范围的深度,并且能够抑制邻近效应。

    Process for producing photoresist composition, filter, coater and photoresist composition
    48.
    发明授权
    Process for producing photoresist composition, filter, coater and photoresist composition 有权
    光致抗蚀剂组合物,过滤器,涂布机和光致抗蚀剂组合物的制造方法

    公开(公告)号:US07771911B2

    公开(公告)日:2010-08-10

    申请号:US10536047

    申请日:2003-12-18

    IPC分类号: G03C1/00 C02F1/44

    摘要: A technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development is provided. Further, a technique to obtain a photoresist composition having excellent storage stability characteristics as a resist solution (storage stability); and a technique to obtain a photoresist composition which reduces the change of sensitivity and resist pattern size after treatment almost completely are provided. A photoresist composition containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) is passed through a first filter 2a equipped with a first membrane having zeta potential of more than −20 mV but no more than 15 mV in distilled water of pH 7.0.

    摘要翻译: 提供了获得能够减少显影后的抗蚀剂图案的缺陷发生的光致抗蚀剂组合物的技术。 此外,获得具有优异的储存稳定性特性的光致抗蚀剂组合物作为抗蚀剂溶液的技术(保存稳定性); 并且提供了一种获得光刻胶组合物的技术,其提供了几乎完全降低了处理后的灵敏度变化和抗蚀剂图案尺寸的技术。 含有树脂组分(A),产生暴露酸的产酸组分(B)和有机溶剂(C)的光致抗蚀剂组合物通过配备有具有更多ζ电位的第一膜的第一过滤器2a 在pH 7.0的蒸馏水中为-20mV,但不超过15mV。

    NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN
    49.
    发明申请
    NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN 失效
    新型化合物,其制造方法,酸发生器,耐蚀组合物和形成耐蚀图案的方法

    公开(公告)号:US20090023095A1

    公开(公告)日:2009-01-22

    申请号:US12174293

    申请日:2008-07-16

    摘要: There are provided a novel compound represented by a general formula (b1-1) shown below, which is useful as an acid generator for a resist composition and a manufacturing method thereof, a compound useful as a precursor of the novel compound and a manufacturing method thereof, an acid generator, a resist composition and a method of forming a resist pattern. (wherein, R1 represents an aryl group or alkyl group which may contain a substituent group; R3 represents a hydrogen atom or an alkyl group; n1 represents an integer of 0 or 1, and in the case that n1 is 1, R1 and R3 may mutually be bonded to form a ring with a 3- to 7-membered ring structure together with the carbon atom with which R1 is bonded and the carbon atom with which R3 is bonded; A represents a bivalent group which forms a ring with 3- to 7-membered ring structure together with the sulfur atom with which A is bonded, and the ring may contain a substituent group; R2 represents an aromatic group which may contain a substituent group, a linear or branched alkyl group of 1 to 10 carbon atoms which may contain a substituent group, or a linear or branched alkenyl group of 2 to 10 carbon atoms which may contain a substituent group; n represents an integer of 0 or 1; and Y1 represents an alkylene group of 1 to 4 carbon atoms in which hydrogen atoms may be substituted with fluorine atoms.).

    摘要翻译: 提供了由下述通式(b1-1)表示的新化合物,其可用作抗蚀剂组合物的酸产生剂及其制备方法,可用作新化合物的前体的化合物和制备方法 酸产生剂,抗蚀剂组合物和形成抗蚀剂图案的方法。 (其中,R1表示可以含有取代基的芳基或烷基,R3表示氢原子或烷基,n1表示0或1的整数,在n1为1的情况下,R 1和R 3可以 相互键合形成具有3〜7元环结构的环以及与R 1键合的碳原子和与R3结合的碳原子; A表示与3-至 7元环结构与A键合的硫原子一起形成,环可含有取代基; R2表示可含有取代基的芳香族基团,碳原子数1〜10的直链或支链烷基, 可以含有取代基,或可以含有取代基的2〜10个碳原子的直链或支链烯基; n表示0或1的整数; Y1表示碳原子数为1〜4的亚烷基,其中氢 原子可以被氟取代 oms)。