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    Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory
    41.
    发明授权
    Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory 有权
    磁存储单元，磁随机存取存储器以及用于磁随机存取存储器的数据读/写方法

    公开(公告)号：US07929342B2

    公开(公告)日：2011-04-19

    申请号：US11996711

    申请日：2006-08-04

    申请人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

    发明人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

    IPC分类号： G11C11/14

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

    摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

    摘要翻译： 本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。 磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和 第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域 方向。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

    MAGNETIC MEMORY CELL, MAGNETIC RANDOM ACCESS MEMORY, AND DATA READ/WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY
    42.
    发明申请
    MAGNETIC MEMORY CELL, MAGNETIC RANDOM ACCESS MEMORY, AND DATA READ/WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY 有权
    磁性存储单元，磁性随机存取存储器以及用于磁性随机访问存储器的数据读/写方法

    公开(公告)号：US20100142264A1

    公开(公告)日：2010-06-10

    申请号：US11996711

    申请日：2006-08-04

    申请人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

    发明人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

    IPC分类号： G11C11/14 ,  H01L29/82 ,  G11C7/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

    摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

    摘要翻译： 本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。 磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和 第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域 方向。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

    Magnetic random access memory
    45.
    发明授权
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：US08526222B2

    公开(公告)日：2013-09-03

    申请号：US13606737

    申请日：2012-09-07

    申请人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

    发明人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

    IPC分类号： G11C11/15

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L23/367 ,  H01L27/222 ,  H01L43/08 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

    摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

    摘要翻译： 根据本发明的磁性随机存取存储器具有：包括具有可逆磁化强度的无磁化区的磁记录层，其中写入电流在面内方向上流过磁记录层; 具有固定磁化强度的磁化固定层; 设置在磁化自由区​​域和磁化固定层之间的非磁性层; 以及设置成与磁记录层相对并且具有接收和辐射在磁记录层中产生的热的功能的散热结构。 这样结构的磁性随机存取存储器通过使用散热器结构辐射在磁记录层中产生的热量，从而抑制由在面内方向上流动的写入电流引起的温度升高。

    MAGNETIC RANDOM ACCESS MEMORY
    46.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY 有权
    磁性随机存取存储器

    公开(公告)号：US20100149862A1

    公开(公告)日：2010-06-17

    申请号：US12297153

    申请日：2007-04-09

    申请人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

    发明人： Nobuyuki Ishiwata ,  Hideaki Numata ,  Norikazu Ohshima

    IPC分类号： G11C11/14 ,  H01L29/82

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L23/367 ,  H01L27/222 ,  H01L43/08 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

    摘要： A magnetic random access memory comprises a magnetic recording layer equipped with a magnetization reversal region having a reversible magnetization and through which a write current is made to flow in the in-plane direction, a magnetization fixed layer having a fixed magnetization, a nonmagnetic layer provided between the magnetization reversal region and the magnetization fixed layer, and a heat absorbing structure provided opposing to the magnetic recording layer and having a function of receiving heat generated in the magnetic recording layer and of radiating the heat. Such magnetic random access memory can radiate heat generated in the magnetic recording layer by using the heat absorbing structure and prevent temperature rising caused by the write current flowing in the in-plane direction.

    摘要翻译： 磁性随机存取存储器包括配备有具有可逆磁化的磁化反转区域并通过其使写入电流在面内方向上流动的磁记录层，具有固定磁化强度的磁化固定层，提供非磁性层 在磁化反转区域和磁化固定层之间，以及与磁记录层相对设置并具有接收在磁记录层中产生的热量和散热的功能的吸热结构。 这种磁性随机存取存储器可以通过使用吸热结构辐射在磁记录层中产生的热量，并且防止由写入电流在面内方向上流动引起的温度上升。

    MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME
    49.
    发明申请
    MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
    磁性随机访问存储器及其制造方法

    公开(公告)号：US20100046288A1

    公开(公告)日：2010-02-25

    申请号：US12517981

    申请日：2007-10-22

    申请人： Hiroaki Honjou ,  Tetsuhiro Suzuki ,  Norikazu Ohshima

    发明人： Hiroaki Honjou ,  Tetsuhiro Suzuki ,  Norikazu Ohshima

    IPC分类号： G11C11/14 ,  H01L29/82

    CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

    摘要： An MRAM according to the present invention has a pinned layer 60 and a magnetic recording layer 40 connected to the pinned layer 60 through a tunnel barrier layer 50. The magnetic recording layer 40 has a first free layer 10, a second free layer 30 being in contact with the tunnel barrier layer 50, and an intermediate layer 20 provided between the first free layer 10 and the second free layer 30. The first free layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and overlaps the second free layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization orientation is fixed in a first direction. Whereas, the second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization orientation is fixed in a second direction. The first direction and second direction both are toward the magnetization switching region 13 or away from the magnetization switching region 13. The intermediate layer 20 is formed to cover at least the magnetization switching region 13. The magnetization switching region 13 and the second free layer 30 are magnetically coupled to each other through the intermediate layer 20.

    摘要翻译： 根据本发明的MRAM具有通过隧道势垒层50连接到钉扎层60的钉扎层60和磁记录层40.磁记录层40具有第一自由层10，第二自由层30 与隧道势垒层50接触，以及设置在第一自由层10和第二自由层30之间的中间层20.第一自由层10包括磁化切换区域13，第一磁化固定区域11和第二磁化固定 磁化切换区域13具有可逆磁化并与第二自由层30重叠。第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化取向固定在第一方向上。 而第二磁化固定区域12连接到磁化转换区域13的第二边界B2，并且其磁化取向固定在第二方向上。 第一方向和第二方向均朝向磁化开关区域13或远离磁化开关区域13.中间层20形成为至少覆盖磁化开关区域13.磁化切换区域13和第二自由层30 通过中间层20彼此磁耦合。

    MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching region
    50.
    发明授权
    MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching region 有权
    MRAM利用具有比开关区域更大的阻尼系数的固定磁化区域的自由层

    公开(公告)号：US08238135B2

    公开(公告)日：2012-08-07

    申请号：US12529387

    申请日：2008-01-15

    申请人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Hideaki Numata

    发明人： Tetsuhiro Suzuki ,  Norikazu Ohshima ,  Hideaki Numata

    IPC分类号： G11C19/00

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

    摘要： A magnetic recording layer 10 of an MRAM has a first magnetization fixed region 11, a second magnetization fixed region 12 and a magnetization switching region 13. The magnetization switching region 13 has reversible magnetization and overlaps with a pinned layer. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13. The damping coefficient α in at least a portion R1, R2 of the magnetization fixed regions 11 and 12 is larger than the damping coefficient α in the magnetization switching region 13.

    摘要翻译： MRAM的磁记录层10具有第一磁化固定区域11，第二磁化固定区域12和磁化切换区域13.磁化切换区域13具有可逆磁化并与被钉扎层重叠。 第一磁化固定区域11连接到磁化切换区域13的第一边界B1，并且其磁化方向固定在第一方向上。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向均朝向磁化开关区域13或远离磁化开关区域13.磁化固定区域11和12的至少一部分R1，R2中的阻尼系数α大于阻尼 磁化转换区域13中的系数α。