摘要:
Provided that a method for inexpensively producing optically active α-ionone with a high yield and a high asymmetric yield and with good workability in a short process, and a perfume composition comprising the optically active α-ionone obtained by the aforementioned method. A method for producing optically active α-ionone, comprising allowing α-ionone as a mixture of optical isomers to react with an esterification agent, and hydrolyzing the obtained α-ionone enol ester; a method for producing optically active α-ionone comprising subjecting α-ionone as a mixture of optical isomers to an asymmetric reduction, allowing the obtained optically active α-ionol to react with an esterification agent to give an optically active α-ionol ester, hydrolyzing the obtained optically active α-ionol ester after purification as necessary, and then oxidizing the obtained optically active α-ionol; and a perfume composition comprising thus obtained optically active α-ionone.
摘要:
Provided that a method for inexpensively producing optically active α-ionone with a high yield and a high asymmetric yield and with good workability in a short process, and a perfume composition comprising the optically active α-ionone obtained by the aforementioned method. A method for producing optically active α-ionone, comprising allowing α-ionone as a mixture of optical isomers to react with an esterification agent, and hydrolyzing the obtained α-ionone enol ester; a method for producing optically active α-ionone comprising subjecting α-ionone as a mixture of optical isomers to an asymmetric reduction, allowing the obtained optically active α-ionol to react with an esterification agent to give an optically active α-ionol ester, hydrolyzing the obtained optically active α-ionol ester after purification as necessary, and then oxidizing the obtained optically active α-ionol; and a perfume composition comprising thus obtained optically active α-ionone.
摘要:
A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.
摘要:
A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.
摘要:
An endotracheal tube according to the present invention is used by being installed into a patient so as to use it together with a device having an insertion section which is inserted into the body. A portion overlapping with the device inserted into the patient is formed as a flat shape; and furthermore, an outer face portion formed along a longitudinal direction of a cross-section, of the portion formed in the flat shape contacts the device.
摘要:
A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.
摘要:
Easy and precise setting of a predetermined thrust bearing gap is made possible.An axial gap 13 having a dimension that is equal to the sum of two thrust bearing gaps is first provided between the flange part 2b of the shaft member 2 and the bearing member or bearing sleeve 8. The shaft member 2 and the bearing sleeve 8 are accommodated inside the housing 7 with this gap dimension 8 being kept, and the bearing sleeve 8 is secured to the housing 7.
摘要:
A rotation transmission device includes a roller clutch unit for selectively engaging an inner member mounted on a rotary shaft with an outer ring through rollers, and an electromagnetic clutch unit for electromagnetically controlling the selective engagement by the rollers. The current until the clutch engages is set so as to correspond to a state in which a maximum current according to the revolving speed is required and is varied according to the revolving speed of the rotary shaft to reduce power consumption and the size of the electromagnetic coil.
摘要:
A semiconductor memory card includes a wiring board having an outer shape where a cut-out portion is provided at a first long-edge. A second surface of the wiring board includes connection pads disposed along a portion except the cut-out portion of the first long-edge. A memory device is mounted on the second surface of the wiring board. The memory device includes electrode pads arranged along a long-edge positioning in a vicinity of the first long-edge of the wiring board, and one-sidedly disposed so as to correspond to disposed positions of the connection pads. A controller device is stacked on the memory device.
摘要:
There is provided an endoscopic system.The system comprises a flexible endoscope insertable into a first tubular organ from a natural opening of a human body. The system further comprises an opening member which forms on a wall part of the first tubular organ an opening used to insert the endoscope into an abdominal cavity from the first tubular organ in the body, an anastomosing member which is able to anastomoses the first tubular organ with a second tubular organ in the abdominal cavity, and a cutting member with which the second tubular organ is able to be cut.