WAFER-LEVEL METHOD FOR FABRICATING AN OPTICAL CHANNEL AND APERTURE STRUCTURE IN MAGNETIC RECORDING HEAD SLIDERS FOR USE IN THERMALLY-ASSISTED RECORDING (TAR)
    41.
    发明申请
    WAFER-LEVEL METHOD FOR FABRICATING AN OPTICAL CHANNEL AND APERTURE STRUCTURE IN MAGNETIC RECORDING HEAD SLIDERS FOR USE IN THERMALLY-ASSISTED RECORDING (TAR) 审中-公开
    用于制作用于热辅助记录(TAR)的磁记录头滑块中的光通道和光孔结构的波形方法

    公开(公告)号:US20090258186A1

    公开(公告)日:2009-10-15

    申请号:US12101066

    申请日:2008-04-10

    IPC分类号: G03F7/00 B32B3/10

    摘要: A process for forming a plurality of sliders for use in thermally-assisted recording (TAR) disk drives includes a wafer-level process for forming a plurality of aperture structures, and optionally abutting optical channels, on a wafer surface prior to cutting the wafer into individual sliders. The wafer has a generally planar surface arranged into a plurality of rectangularly-shaped regions. In each rectangular region a first metal layer is deposited on the wafer surface, followed by a layer of radiation-transmissive aperture material, which is then lithographically patterned to define the width of the aperture, the aperture width being parallel to the length of the rectangularly-shaped region. A second metal layer is deposited over the patterned layer of aperture material. The resulting structure is then lithographically patterned to define an aperture structure comprising aperture material surrounded by metal and having parallel radiation entrance and exit faces orthogonal to the wafer surface.

    摘要翻译: 用于形成用于热辅助记录(TAR)盘驱动器中的多个滑动件的方法包括在将晶片切割成晶片之前在晶片表面上形成多个孔结构和可选地邻接的光通道的晶片级工艺 个人滑块 晶片具有布置成多个矩形区域的大致平坦的表面。 在每个矩形区域中,第一金属层沉积在晶片表面上,随后是一层辐射透射的孔隙材料,然后将其光刻图案化以限定孔的宽度,孔的宽度平行于矩形的长度 形状区域。 在孔材料的图案化层上沉积第二金属层。 然后将所得结构光刻图案化以限定孔结构,该孔结构包括由金属包围并具有与晶片表面正交的平行辐射入射面和出射面的孔隙材料。

    Sacrificial anode in a kerf for corrosion protection during slider fabrication
    44.
    发明授权
    Sacrificial anode in a kerf for corrosion protection during slider fabrication 失效
    在滑块制造过程中用于腐蚀保护的切口中的牺牲阳极

    公开(公告)号:US07206169B2

    公开(公告)日:2007-04-17

    申请号:US10637963

    申请日:2003-08-08

    IPC分类号: G11B15/62

    摘要: A slider fabrication assembly and method for making the same are provided. A slider is formed on a substrate. A corrodible component of the slider is exposed to an environment in contact with the slider. A kerf region of the substrate is positioned adjacent to the slider. The kerf region is removable from the slider. A sacrificial anode is embedded in the kerf region and exposed to the environment. The sacrificial anode is electrically coupled to the corrodible component of the slider thereby forming an electrochemical cell. The sacrificial anode is less noble, i.e., more corrodible, than the corrodible slider component, and thus corrodes first. When the kerf region is removed, the corroded sacrificial anode is removed as well.

    摘要翻译: 提供了一种滑块制造组件及其制造方法。 滑块形成在基板上。 滑块的可腐蚀部件暴露于与滑块接触的环境中。 衬底的切口区域邻近滑块定位。 切口区域可从滑块移除。 牺牲阳极嵌入切口区域并暴露于环境中。 牺牲阳极电耦合到滑块的可腐蚀部件,从而形成电化学电池。 牺牲阳极比可腐蚀的滑块部件更不贵,即更可腐蚀,因此首先腐蚀。 当切除切口区域时,腐蚀的牺牲阳极也被去除。

    Enhanced low profile magnet write head
    45.
    发明授权
    Enhanced low profile magnet write head 失效
    增强型低磁铁磁头

    公开(公告)号:US06687083B2

    公开(公告)日:2004-02-03

    申请号:US09935361

    申请日:2001-08-22

    IPC分类号: G11B5147

    摘要: An low profile inductive write head is provided to improve track definition and head efficiency and to reduce overcoat and pole tip protrusion and cracking caused by thermal expansion. A first insulation layer of an insulation stack enclosing the coil layer is formed of an non-magnetic inorganic insulator material such as aluminum oxide, silicon dioxide or titanium dioxide having a thickness of in the range of 0.2-0.3 microns. The thinner first insulation layer results in a significantly reduced slope of the insulation stack which decreases reflective notching during processing of the second pole tip to improve track definition. Improved thermal conduction properties of the inorganic insulator material improves heat sinking of the write coil reducing overcoat and pole tip protrusion and cracking at the pole tip/write gap layer interface.

    摘要翻译: 提供了一种低调的感应写头,以提高轨道清晰度和头部效率,并减少由热膨胀引起的外涂层和极尖突起和开裂。 封闭线圈层的绝缘堆叠的第一绝缘层由厚度为0.2-0.3微米的非磁性无机绝缘体材料例如氧化铝,二氧化硅或二氧化钛形成。 较薄的第一绝缘层导致绝缘堆叠的显着减小的斜率,这降低了在第二极尖的处理期间的反射缝合,以改善轨道定义。 无机绝缘体材料的改进的导热性能改善了写入线圈的散热,从而减小了极尖/写入间隙层界面处的外涂层和极尖突起以及开裂。

    Thin film magnetic head
    46.
    发明授权
    Thin film magnetic head 失效
    薄膜磁头

    公开(公告)号:US06621660B2

    公开(公告)日:2003-09-16

    申请号:US09764019

    申请日:2001-01-16

    IPC分类号: G11B5147

    摘要: The electroplated components of a magnetic head of the present invention are fabricated utilizing a seed layer that is susceptible to reactive ion etch removal techniques. A preferred seed layer is comprised of tungsten or titanium. Following the electroplating of the components utilizing a fluorine species reactive ion etch process the seed layer is removed, and significantly, the fluorine RIE process creates a gaseous tungsten or titanium fluoride compound removal product. The problem of seed layer redeposition along the sides of the electroplated components is overcome because the gaseous fluoride compound is not redeposited. The present invention also includes an enhanced two part seed layer, where the lower part is tungsten, titanium or tantalum and the upper part is composed of the material that constitutes the component to be electroplated.

    摘要翻译: 本发明的磁头的电镀部件利用易受反应离子蚀刻去除技术影响的晶种层来制造。 优选的种子层由钨或钛组成。 在利用氟物质反应离子蚀刻工艺对组分进行电镀之后,除去种子层,并且显着地,氟RIE工艺产生气态钨或氟化钛化合物去除产物。 由于气态氟化物不再沉积,克服了沿着电镀部件侧面的种子层再沉积的问题。 本发明还包括增强的两部分种子层,其中下部是钨,钛或钽,并且上部由构成待电镀部件的材料构成。

    Data storage system with TiC MR-head magnetic shield dummy shield spark gap
    47.
    发明授权
    Data storage system with TiC MR-head magnetic shield dummy shield spark gap 失效
    数据存储系统采用TiC MR磁头磁屏蔽虚拟屏蔽火花隙

    公开(公告)号:US06359750B1

    公开(公告)日:2002-03-19

    申请号:US09434450

    申请日:1999-11-05

    IPC分类号: G11B5127

    摘要: A magneto-resistive read head having a “parasitic shield” in a data storage system provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head. The parasitic shield is provided in close proximity to a conventional magnetic shield. The electrical potential of parasitic shield is held essentially equal to the electrical potential of the sensor element. If charges accumulate on the conventional shield, current will flow to the parasitic shield at a lower potential than would be required for current to flow between the conventional shield and the sensor element. Alternatively, conductive spark gap devices are electrically coupled to sensor element leads and to each magnetic shield. Each spark gap device is brought within very close proximity of the substrate to provide an alternative path for charge that builds up between the sensor element and the substrate to be discharged. The ends of the spark gaps that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device and the substrate.

    摘要翻译: 在数据存储系统中具有“寄生屏蔽”的磁阻式读取头为与电荷放电相关联的电流提供替代路径,从而防止这种电流损坏读取头。 寄生屏蔽件靠近传统的磁屏蔽设置。 寄生屏蔽的电位基本上等于传感器元件的电位。 如果电容积累在常规屏蔽上,则电流将以比传统屏蔽和传感器元件之间的电流流动所需的电位更低的电流流向寄生屏蔽。 或者,导电火花隙装置电耦合到传感器元件引线和每个磁屏蔽。 每个火花隙装置被带到非常靠近基板的位置,以提供在传感器元件和待排出的基板之间建立的用于充电的替代路径。 靠近基板的火花隙的端部优选地配置有高电场密度诱导结构,其降低在火花隙装置和基板之间引起火花放电所需的电压。

    Method for making a thin film inductive write head having a pedestal
pole tip and an electroplated gap
    48.
    发明授权
    Method for making a thin film inductive write head having a pedestal pole tip and an electroplated gap 失效
    用于制造具有基座极端和电镀间隙的薄膜感应写头的方法

    公开(公告)号:US5901432A

    公开(公告)日:1999-05-11

    申请号:US997957

    申请日:1997-12-24

    IPC分类号: G11B5/31 G11B5/39 G11B5/127

    摘要: A method for making a merged thin film read/write head, where the first pole piece includes a pedestal or pole tip portion that extends up from the first pole piece layer, uses electroplating to form the gap so that the gap layer does not have to be removed later. After the first pole piece is deposited, the coil insulation structure is built over the first pole piece. Afterwards an electrically conductive seed layer of the same ferromagnetic material as the first pole piece is formed over the wafer to provide an electrically conductive path for subsequent electroplating. After the seed layer deposition, a photoresist pattern is then formed to define the shape of the second pole piece. Nonmagnetic nickel-phosphorous is then electroplated onto the seed layer in the region not covered by the photoresist pattern to form the gap layer. The second ferromagnetic layer is then electroplated onto the gap layer to define the shape of the second pole piece. The thickness of the second pole piece layer is deliberately made thicker than the desired final thickness because the second pole piece layer is used as a mask for subsequent ion beam milling to form the notched pole tip element of the first pole piece. The photoresist is removed and ion beam milling performed to remove the seed layer and a portion of the first pole piece layer to define the pedestal pole tip element of the first pole piece. The ion beam milling does not have to remove the gap layer because the electroplated gap has been defined by the photoresist pattern to have the desired trackwidth.

    摘要翻译: 一种制造合并薄膜读/写头的方法,其中第一极片包括从第一极片层向上延伸的基座或极尖部分,使用电镀形成间隙,使得间隙层不必 稍后删除 在第一极片沉积之后,线圈绝缘结构被构建在第一极片上。 之后,在晶片上形成与第一极片相同的铁磁材料的导电种子层,以提供用于随后电镀的导电路径。 在种子层沉积之后,然后形成光刻胶图案以限定第二极片的形状。 然后将非磁性镍磷电镀在未被光致抗蚀剂图案覆盖的区域中的种子层上以形成间隙层。 然后将第二铁磁层电镀到间隙层上以限定第二极靴的形状。 由于第二极片层用作后续离子束铣削的掩模以形成第一极靴的切口极端部元件,所以第二极靴层的厚度被故意地制造得比期望的最终厚度更厚。 去除光致抗蚀剂,进行离子束研磨以除去种子层和第一极片层的一部分,以限定第一极片的基座极端部元件。 离子束铣削不必去除间隙层,因为电镀间隙已由光致抗蚀剂图案限定以具有期望的轨道宽度。

    Method for making a thin film merged magnetoresistive read/inductive
write head having a pedestal pole tip
    49.
    发明授权
    Method for making a thin film merged magnetoresistive read/inductive write head having a pedestal pole tip 失效
    用于制造具有基座极尖的薄膜合并磁阻读/写写头的方法

    公开(公告)号:US5867890A

    公开(公告)日:1999-02-09

    申请号:US992026

    申请日:1997-12-17

    IPC分类号: G11B5/31 G11B5/39 G11B5/42

    摘要: A method is described for making a merged thin film read/write head where a common layer serves as both a magnetic shield for the magentoresistive read element and the first pole piece for the inductive write element, and where the first pole piece thus includes a pedestal pole tip portion that extends up from the first pole piece layer. During fabrication a nonmagnetic spacer layer is deposited over the second pole tip and the gap layer, and then reactive ion etching (RIE) removes the spacer layer from the top of the second pole tip and the gap layer not beneath the second pole piece, but leaves the spacer layer on the sidewalls of the second pole tip. The ion bombardment of the RIE process is perpendicular to the gap layer and is continued after removal of the spacer layer to also remove the gap layer in the region not beneath the second pole piece so that the first pole piece layer is exposed. The RIE uses a gas that is more reactive with the gap material than the material of the second pole tip so that the top surface of the second pole tip is not substantially removed during etching of the gap layer. Next, ion milling removes the material from the layer of the first pole piece to form a first pedestal pole tip beneath the gap. Material ejected from the first pole piece layer during ion milling that gets redeposited on the second pole piece is prevented from contacting the sidewalls of the second pole tip because of the spacer layer.

    摘要翻译: 描述了一种用于制造合并的薄膜读/写头的方法,其中公共层用作磁阻读取元件的磁屏蔽和用于感应写元件的第一极片,并且其中第一极片因此包括基座 极尖部分,其从第一极片层向上延伸。 在制造期间,在第二极尖和间隙层上沉积非磁性间隔层,然后反应离子蚀刻(RIE)从第二极尖顶部和第二极片下面的间隙层去除间隔层,但是 将间隔层留在第二极尖的侧壁上。 RIE工艺的离子轰击垂直于间隙层,并且在去除间隔层之后继续移除在第二极靴下方的区域中的间隙层,以使第一极片层露出。 RIE使用比间隙材料更能反应的气体,而不是第二极尖的材料,使得在蚀刻间隙层期间第二极尖的顶表面基本上不被去除。 接下来,离子铣削从第一极靴的层移除材料以在间隙下方形成第一基座极尖。 由于间隔层,防止了离子研磨期间从第一极片层排出的材料再次沉积在第二极片上与第二极尖端的侧壁接触。

    Metal-in-gap thin film magnetic head employing Ni.sub.45 Fe.sub.55
    50.
    发明授权
    Metal-in-gap thin film magnetic head employing Ni.sub.45 Fe.sub.55 失效
    使用Ni45Fe55的金属间隙薄膜磁头

    公开(公告)号:US5812350A

    公开(公告)日:1998-09-22

    申请号:US729081

    申请日:1996-10-09

    摘要: The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.

    摘要翻译: 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中,感应头或MR头的感应头部分的每个极片具有层的组合,每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金(Ni81Fe19)远离间隙。 由于两层由NiFe制成,所以可以使用这种类型的材料的所有理想特性,并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60%。 本发明避免了磁致伸缩的影响,尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比,层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时,磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能,那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。