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52 条记录 (耗时 0.043 秒)

    Auto-provisioning for a voice over IP gateway
    41.
    发明申请
    Auto-provisioning for a voice over IP gateway 有权
    通过IP网关自动配置语音

    公开(公告)号：US20050094624A1

    公开(公告)日：2005-05-05

    申请号：US10699261

    申请日：2003-10-31

    申请人： Kevin Patfield ,  David Strand

    发明人： Kevin Patfield ,  David Strand

    IPC分类号： H04L12/66 ,  H04L29/06

    CPC分类号： H04L12/66 ,  H04L29/06027 ,  H04L65/103 ,  H04L65/1073

    摘要： A method of provisioning a gateway (80) is provided in a telecommunications network including a circuit-switched network (90) and a packet-switched network (70). The gateway (80) bridges calls between the circuit-switched network (90) and the packet-switched network (70). The method includes: receiving a registration message from consumer premises equipment (CPE) (60), the message including an address for the CPE (60) on the packet-switched network (70); determining a directory number (DN) for the CPE (60); placing a probe call to the determined DN over the circuit-switched network (90); receiving a call from the circuit-switched network (90), the call being terminated at a call reference value (CRV); recognizing the received call received from the circuit-switched network (90) as the probe call; capturing the CRV at which the probe call is terminated; and, associating the captured CRV with the address for the CPE (60).

    摘要翻译： 在包括电路交换网络（90）和分组交换网络（70）的电信网络中提供了提供网关（80）的方法。 网关（80）桥接电路交换网络（90）和分组交换网络（70）之间的呼叫。 该方法包括：从消费者住宅设备（CPE）（60）接收注册消息，该消息包括分组交换网络（70）上的CPE（60）的地址; 确定CPE的目录号码（DN）（60）; 在电路交换网络（90）上对所确定的DN进行探测呼叫; 接收来自所述电路交换网络（90）的呼叫，所述呼叫以呼叫参考值（CRV）终止; 识别从所述电路交换网络（90）接收的所接收的呼叫作为所述探测呼叫; 捕获探测呼叫终止的CRV; 并且将捕获的CRV与CPE的地址相关联（60）。

    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies
    42.
    发明申请
    Plasma Deposition of Amorphous Semiconductors at Microwave Frequencies 审中-公开

    公开(公告)号：US20120040518A1

    公开(公告)日：2012-02-16

    申请号：US13284912

    申请日：2011-10-30

    申请人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    发明人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC分类号： H01L21/20

    CPC分类号： C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    Plasma deposition of amorphous semiconductors at microwave frequencies
    43.
    发明授权
    Plasma deposition of amorphous semiconductors at microwave frequencies 失效
    微波等离子体沉积非晶半导体

    公开(公告)号：US08048782B1

    公开(公告)日：2011-11-01

    申请号：US12855631

    申请日：2010-08-12

    申请人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    发明人： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

    IPC分类号： H01L21/00

    CPC分类号： C23C16/452 ,  C23C16/24 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

    摘要： Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

    摘要翻译： 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。 导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

    Bulk fluid flow gate
    46.
    发明申请
    Bulk fluid flow gate 审中-公开
    散装流体闸门

    公开(公告)号：US20070151615A1

    公开(公告)日：2007-07-05

    申请号：US10557536

    申请日：2004-05-19

    申请人： David Strand ,  Daniel Leatzow

    发明人： David Strand ,  Daniel Leatzow

    IPC分类号： F15C1/04

    CPC分类号： B01L3/502746 ,  B01L2300/0645 ,  B01L2300/0877 ,  B01L2300/0887 ,  B01L2300/1894 ,  B01L2400/0421 ,  B01L2400/082 ,  G01N27/44756 ,  Y10T137/2191

    摘要： A bulk fluid flow gate is provided. In accordance with certain exemplary embodiments the bulk fluid flow gate includes a first and second entry port and first and second exit ports. Bulk fluid is flowed into the chamber to provide greater hydrodynamic resistance at the first exit port than at the second exit port. The bulk fluid flow gate is useful for separation, testing and or analysis of analytes. Methods of making and using the bulk fluid flow gate are also provided. In accordance with certain exemplary embodiments a fluid flow gate includes a first entry port to a microscale chamber and first and second exit ports. In accordance with certain exemplary embodiments a fluid flow gate includes a first entry port to a chamber and first and second exit ports, wherein greater hydrodynamic resistance is provided at the first exit port than at the second exit port.

    摘要翻译： 提供散装流体流动门。 根据某些示例性实施例，本体流体流动门包括第一入口端口和第二入口端口以及第一和第二出口端口。 散装流体流入室，以在第一出口处提供比在第二出口处更大的流体动力阻力。 散装流体闸门可用于分析，分析和分析。 还提供了制造和使用散装流体闸门的方法。 根据某些示例性实施例，流体流动门包括到微型室的第一入口和第一和第二出口。 根据某些示例性实施例，流体流动门包括到腔室的第一进入口和第一和第二出口，其中在第一出口处提供比在第二出口处更大的流体动力阻力。

    Method and apparatus for forming microstructures on polymeric substrates
    47.
    发明申请
    Method and apparatus for forming microstructures on polymeric substrates 审中-公开
    用于在聚合物基材上形成微结构的方法和装置

    公开(公告)号：US20070014886A1

    公开(公告)日：2007-01-18

    申请号：US11522819

    申请日：2006-09-18

    申请人： Michael Hennessey ,  David Strand ,  Barry Clark ,  Paul Gasiorowski

    发明人： Michael Hennessey ,  David Strand ,  Barry Clark ,  Paul Gasiorowski

    IPC分类号： B29C43/46

    CPC分类号： B29C43/222 ,  B29C43/00 ,  B29C59/04 ,  B29C2043/025 ,  B29C2043/463 ,  B29C2059/023 ,  B29L2017/005 ,  G11B7/263

    摘要： An apparatus for forming microstructures in the surface of polymeric web materials for use as optical memory substrates. The microstructures may be formed by laminating a hot stamper to a web of material with a selective time/temperature profile. The stamper may be heated to melt flow the surface of the web and stabilize before separation. The stamper may be carried by a support that is independent of the press. The web of polymeric material may be provided with a flow enhancer to improve image formation. Also described herein are methods and apparatus for making optical memory modules, such as disks, which include novel stampers, coating applicators, and finishing systems.

    摘要翻译： 用于在聚合物网状材料的表面形成微结构以用作光学记忆基底的装置。 微结构可以通过将热压模层压到具有选择性时间/温度分布的材料幅材上而形成。 压模可以被加热以熔化纤维网的表面并在分离之前稳定。 压模可以由独立于压机的支撑承载。 聚合物材料的网可以设置有流动增强剂以改善图像形成。 本文还描述了用于制造诸如盘的光学存储器模块的方法和装置，其包括新颖的压模，涂布器和整饰系统。

    Method and apparatus for forming microstructures on polymeric substrates
    50.
    发明申请
    Method and apparatus for forming microstructures on polymeric substrates 审中-公开
    用于在聚合物基材上形成微结构的方法和装置

    公开(公告)号：US20050167890A1

    公开(公告)日：2005-08-04

    申请号：US11057636

    申请日：2005-02-14

    申请人： Michael Hennessey ,  David Strand ,  Barry Clark ,  Paul Gasiorowski

    发明人： Michael Hennessey ,  David Strand ,  Barry Clark ,  Paul Gasiorowski

    IPC分类号： B29C35/08 ,  B29C43/02 ,  B29C59/02 ,  B29C59/04

    CPC分类号： B29C43/021 ,  B29C43/00 ,  B29C59/026 ,  B29C59/04 ,  B29C2035/0811 ,  B29C2043/025 ,  B29C2059/023 ,  B29L2017/00 ,  B29L2017/005

    摘要： Methods and apparatus for forming microstructures in the surface of polymeric web materials for use as optical memory substrates. The microstructures may be formed by laminating a hot stamper to a web of material with a selective time/temperature profile. The stamper may be heated to melt flow the surface of the web and stabilize before separation. The stamper may be carried by a support that is independent of the press. The web of polymeric material may be provided with a flow enhancer to improve image formation. Also described herein are methods and apparatus for making optical memory modules, such as disks, which include novel stampers, coating applicators, and finishing systems.

    摘要翻译： 用于在聚合物网状材料的表面形成微结构以用作光学记忆基底的方法和装置。 微结构可以通过将热压模层压到具有选择性时间/温度分布的材料幅材上而形成。 压模可以被加热以熔化纤维网的表面并在分离之前稳定。 压模可以由独立于压机的支撑承载。 聚合物材料的网可以设置有流动增强剂以改善图像形成。 本文还描述了用于制造诸如盘的光学存储器模块的方法和装置，其包括新颖的压模，涂布器和整饰系统。