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60 条记录 (耗时 0.025 秒)

    Semiconductor laser device
    43.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4819244A

    公开(公告)日：1989-04-04

    申请号：US870450

    申请日：1986-06-04

    申请人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    发明人： Saburo Yamamoto ,  Hiroshi Hayashi ,  Taiji Morimoto

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/223 ,  H01S5/227 ,  H01S5/24 ,  H01S3/19

    CPC分类号： H01S5/02 ,  H01S5/0217 ,  H01S5/2232 ,  H01S5/2275 ,  H01S5/24

    摘要： A V-channel inner stripe semiconductor laser device comprising a multi-layered growth crystal having an active layer for laser oscillation but no substrate, with a buffer layer formed on the multi-layered growth crystal thicker than all of the layers of the growth crystal, where the multi-layered growth crystal and buffer layer are sandwiched between an n-sided electrode and a p-sided electrode, wherein a pair of mesa-striped channels are formed outside of the V-channel to remove the outside of the optical waveguide formed in the active layer corresponding to the V-channel.

    摘要翻译： 一种V沟道内条状半导体激光器件，包括具有用于激光振荡的有源层但不具有衬底的多层生长晶体，其中形成在比生长晶体的所有层厚的多层生长晶体上的缓冲层， 其中多层生长晶体和缓冲层夹在n侧电极和p侧电极之间，其中在V沟道外部形成一对台面条纹沟槽以去除形成的光波导的外部 在对应于V通道的有源层中。

    Planar light source, display device and method for manufacturing the same
    45.
    发明授权
    Planar light source, display device and method for manufacturing the same 有权
    平面光源，显示装置及其制造方法

    公开(公告)号：US07965351B2

    公开(公告)日：2011-06-21

    申请号：US12335916

    申请日：2008-12-16

    申请人： Osamu Kawasaki ,  Taiji Morimoto ,  Masanori Watanabe

    发明人： Osamu Kawasaki ,  Taiji Morimoto ,  Masanori Watanabe

    IPC分类号： G02F1/1335 ,  G09F13/04 ,  G09F13/08

    CPC分类号： G02F1/133603 ,  G02F1/133609 ,  G02F1/133611

    摘要： Light-emitting elements are divided into chromaticity groups on the basis of their chromaticity. In a planar light source, light-emitting elements selected from two of the chromaticity groups are alternately provided in a longitudinal direction and in a transverse direction, respectively. The two chromaticity groups are substantially equally away from a target chromaticity in directions reverse to each other. Further, pairs of two of the light-emitting elements belonging to the two chromaticity groups which are separated from each other, are provided so that distances d2 at which two of the light-emitting elements in each of the pairs are provided are less than distances d1 at which the pairs are provided.

    摘要翻译： 发光元件根据其色度分为色度组。 在平面光源中，从两个色度组中选出的发光元件分别在纵向方向和横向上交替地设置。 两个色度组在彼此相反的方向上基本上等于远离目标色度。 此外，属于彼此分离的两个色度组的两个发光元件的成对被设置成使得设置有每对中的两个发光元件的距离d2小于距离 设置成对的d1。

    LIGHT EMITTING APPARATUS, LIGHTING DEVICE AND LIQUID CRYSTAL DISPLAY APPARATUS
    47.
    发明申请
    LIGHT EMITTING APPARATUS, LIGHTING DEVICE AND LIQUID CRYSTAL DISPLAY APPARATUS 有权
    发光装置，照明装置和液晶显示装置

    公开(公告)号：US20090002604A1

    公开(公告)日：2009-01-01

    申请号：US12119823

    申请日：2008-05-13

    申请人： Taiji Morimoto

    发明人： Taiji Morimoto

    IPC分类号： F21V9/16 ,  G02F1/1335

    CPC分类号： H05B33/0857 ,  F21V9/30 ,  F21V9/40 ,  F21V23/00 ,  F21Y2115/10 ,  G02F1/133609 ,  G02F2201/52 ,  G09G3/34 ,  G09G2320/0666

    摘要： A light emitting apparatus is described. The apparatus includes a light emitting section having a plurality of light sources, the plurality of light sources each including a semiconductor light emitting element and one or more types of phosphors for performing a wavelength conversion on a portion of light outputted from the semiconductor light emitting element to radiate fluorescence, and the plurality of light sources each emitting light of different colors; and a light emitting control section for controlling emission intensity of each of the plurality of light sources to control a color temperature of a combined light emitted from the plurality of light sources.

    摘要翻译： 描述了发光装置。 该装置包括具有多个光源的发光部，多个光源各自包括半导体发光元件和用于对从半导体发光元件输出的光的一部分进行波长转换的一种或多种荧光体 以发射荧光，并且所述多个光源各自发射不同颜色的光; 以及发光控制部，其用于控制​​所述多个光源中的每一个的发光强度，以控制从所述多个光源发射的组合光的色温。

    Semiconductor laser device and manufacturing method therefor
    49.
    发明授权
    Semiconductor laser device and manufacturing method therefor 失效
    半导体激光器件及其制造方法

    公开(公告)号：US07180925B2

    公开(公告)日：2007-02-20

    申请号：US10715025

    申请日：2003-11-18

    申请人： Yoshiaki Ueda ,  Keisuke Miyazaki ,  Kazuhiko Wada ,  Masaki Tatsumi ,  Taiji Morimoto

    发明人： Yoshiaki Ueda ,  Keisuke Miyazaki ,  Kazuhiko Wada ,  Masaki Tatsumi ,  Taiji Morimoto

    IPC分类号： H01S5/00

    CPC分类号： H01S5/2231 ,  H01S5/0655 ,  H01S5/222 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2302/00

    摘要： A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 μm (about 0.5 μm) on the whole surface of ridge portions of two semiconductor lasers. Thus, the light confinement layer on the ridge portions is made roughly flat so as to be easily removable by etching. As a result, the exposure of p-type second cladding layers of the ridge portions due to deep etching is prevented to allow the confinement of light into the p-type cladding layers to be stably effected. A dielectric film is formed on the light confinement layer and reinforces the current constriction function lost by the reduction in the thickness of the light confinement layer.

    摘要翻译： 由具有与p型第二包覆层的折射率不同的折射率的半导体构成的光限制层在两个脊部的整个表面上形成为不大于2μm（约0.5μm）的小的膜厚度 半导体激光器 因此，脊部上的光限制层大致平坦，以便通过蚀刻易于移除。 结果，防止由于深蚀刻而引起的脊部的p型第二包覆层的曝光，从而能够稳定地对p型包层的光进行限制。 在光限制层上形成电介质膜，并且增强了通过光限制层的厚度减小而损失的电流收缩功能。

    Semiconductor laser device having a multi-layer buffer layer
    50.
    发明授权
    Semiconductor laser device having a multi-layer buffer layer 有权
    具有多层缓冲层的半导体激光装置

    公开(公告)号：US07034341B2

    公开(公告)日：2006-04-25

    申请号：US10412280

    申请日：2003-04-14

    申请人： Keisuke Miyazaki ,  Kazuhiko Wada ,  Taiji Morimoto

    发明人： Keisuke Miyazaki ,  Kazuhiko Wada ,  Taiji Morimoto

    IPC分类号： H10L33/12

    CPC分类号： H01S5/22 ,  H01S5/2081 ,  H01S5/4087 ,  H01S2301/173

    摘要： An AlGaAs-based semiconductor laser 29 is formed on an n-type GaAs substrate 21 and thereafter etching is carried out until reaching an n-type AlGaAs clad layer 23 from the surface. Next, the n-type AlGaAs clad layer 23 is removed by etching with an etchant having selectivity to GaAs. Subsequently, the surface of an n-type GaAs buffer layer 22 is lightly etched. Thus, the n-type GaAs buffer layer 22 of the AlGaAs-based semiconductor laser 29 is left in a slightly abraded state on the n-type GaAs substrate 21, maintaining the flatness of the groundwork layer during growing an AlGaInP-based semiconductor laser 38 at the second time. Therefore, the flatness of the crystals of, in particular, an active layer grown at the second time can be improved, and the poor characteristics of the AlGaInP-based semiconductor laser 38 attributed to the poor flatness of the groundwork can be improved.

    摘要翻译： 在n型GaAs衬底21上形成AlGaAs半导体激光器29，然后进行蚀刻，直到从表面到达n型AlGaAs覆盖层23。 接下来，通过用对GaAs的选择性的蚀刻剂进行蚀刻来去除n型AlGaAs覆盖层23。 随后，轻蚀刻n型GaAs缓冲层22的表面。 因此，基于AlGaAs的半导体激光器29的n型GaAs缓冲层22在n型GaAs衬底21上处于略微磨损的状态，在生长AlGaInP基半导体激光器38期间保持基底层的平坦度 第二次 因此，可以提高特别是第二次生长的有源层的晶体的平坦度，并且可以提高归因于基础的平坦度差的AlGaInP基半导体激光器38的差的特性。