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    FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
    43.
    发明申请
    FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 有权
    柔性半导体器件及其制造方法

    公开(公告)号：US20120181543A1

    公开(公告)日：2012-07-19

    申请号：US13498700

    申请日：2011-04-14

    申请人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano

    发明人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano

    IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L21/50 ,  H01L27/06

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/1292 ,  H01L27/3244 ,  H01L29/78603 ,  H01L2251/5338

    摘要： Disclosed are a flexible semiconductor device and manufacturing method therefor whereby the capacitances of capacitor parts of semiconductor elements and the like can be increased while decreasing parasitic capacitances that arise between multilevel interconnections. The disclosed flexible semiconductor device is provided with an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element comprises: a semiconductor layer formed on the top surface of the insulating film; a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer; and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulting film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer.

    摘要翻译： 公开了一种柔性半导体器件及其制造方法，由此可以增加半导体元件等的电容器部件的电容，同时减小在多层互连之间产生的寄生电容。 所公开的柔性半导体器件设置有形成有半导体元件的绝缘膜。 绝缘膜的顶表面和底表面分别具有顶部布线图案层和底部布线图案层。 半导体元件包括：形成在绝缘膜的顶表面上的半导体层; 源电极和漏电极，形成在绝缘膜的顶表面上以与半导体层接触; 以及形成在绝缘膜的底表面上以与半导体层相对的栅电极。 作为与源极电极，漏极电极，顶部布线图案层和底部布线图案层相对的绝缘膜的厚度的第一厚度大于第二厚度，其是绝缘膜的厚度 栅电极和半导体层。

    Flexible semiconductor device and method for manufacturing same
    45.
    发明授权
    Flexible semiconductor device and method for manufacturing same 有权
    柔性半导体器件及其制造方法

    公开(公告)号：US08343822B2

    公开(公告)日：2013-01-01

    申请号：US12681445

    申请日：2009-07-30

    申请人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

    发明人： Koichi Hirano ,  Seiichi Nakatani ,  Tatsuo Ogawa ,  Takashi Ichiryu ,  Takeshi Suzuki

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L29/78651 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/7869

    摘要： A method for manufacturing a flexible semiconductor device includes (i) forming an insulating film on the upper surface of metal foil, (ii) forming an extraction electrode pattern on the upper surface of the metal foil, (iii) forming a semiconductor layer on the insulating film such that the semiconductor layer is in contact with the extraction electrode pattern, (iv) forming a sealing resin layer on the upper surface of the metal foil such that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) forming electrodes by etching the metal foil, the metal foil being used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). The metal foil need not be stripped, and a high-temperature process can be used.

    摘要翻译： 一种制造柔性半导体器件的方法包括：（i）在金属箔的上表面上形成绝缘膜，（ii）在金属箔的上表面上形成引出电极图案，（iii）在金属箔的上表面上形成半导体层 绝缘膜，使得半导体层与引出电极图案接触，（iv）在金属箔的上表面上形成密封树脂层，使得密封树脂层覆盖半导体层和引出电极图案，和（ v）通过蚀刻金属箔形成电极，金属箔用作绝缘膜的支撑体，引出电极图案，半导体层和形成在（i）至（iv）中的密封树脂层，并用作 （v）中的电极的构成材料。 金属箔不需要剥离，可以使用高温工艺。

    MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE
    46.
    发明申请
    MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE 有权
    柔性半导体器件的制造方法

    公开(公告)号：US20110121298A1

    公开(公告)日：2011-05-26

    申请号：US13054049

    申请日：2010-02-05

    申请人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano

    发明人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/78603 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78681 ,  H01L29/7869 ,  H01L2224/24195 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/92244 ,  H01L2924/3511 ,  H01L2924/3512

    摘要： A method includes the steps of preparing a multilayer film 80 formed by sequentially stacking a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40; forming a source electrode 42s and a drain electrode 42d comprised of the second metal layer 40 by etching the second metal layer 40; pressure-bonding a resin layer 50 onto a surface of the multilayer film 80 provided with the source electrode 42s and the drain electrode 42d to burry the source electrode 42s and the drain electrode 42d in the resin layer 50; and forming a gate electrode 10g comprised of the first metal layer 10 by etching the first metal layer 10. The inorganic insulating layer 20g functions as a gate insulating film. The semiconductor layer 30 functions as a channel.

    摘要翻译： 一种方法包括制备通过顺序堆叠第一金属层10，无机绝缘层20，半导体层30和第二金属层40而形成的多层膜80的步骤; 通过蚀刻第二金属层40形成由第二金属层40构成的源电极42s和漏电极42d; 将树脂层50压接到设置有源电极42s和漏电极42d的多层膜80的表面，以将树脂层50中的源电极42s和漏电极42d嵌入; 以及通过蚀刻第一金属层10形成由第一金属层10构成的栅极电极10g。无机绝缘层20g用作栅极绝缘膜。 半导体层30用作沟道。

    Flexible semiconductor device and method for producing the same
    50.
    发明授权
    Flexible semiconductor device and method for producing the same 有权
    柔性半导体器件及其制造方法

    公开(公告)号：US08525178B2

    公开(公告)日：2013-09-03

    申请号：US13498700

    申请日：2011-04-14

    申请人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano

    发明人： Takashi Ichiryu ,  Seiichi Nakatani ,  Koichi Hirano

    IPC分类号： H01L29/04

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/1292 ,  H01L27/3244 ,  H01L29/78603 ,  H01L2251/5338

    摘要： A flexible semiconductor device includes an insulating film on which a semiconductor element is formed. The top and bottom surfaces of the insulating film have a top wiring pattern layer and a bottom wiring pattern layer, respectively. The semiconductor element includes a semiconductor layer formed on the top surface of the insulating film, a source electrode and a drain electrode formed on the top surface of the insulating film so as to contact the semiconductor layer, and a gate electrode formed on the bottom surface of the insulating film so as to be opposite the semiconductor layer. A first thickness, which is the thickness of the insulating film facing the source electrode, the drain electrode, the top wiring pattern layer, and the bottom wiring pattern layer, is greater than a second thickness, which is the thickness of the insulating film between the gate electrode and the semiconductor layer.

    摘要翻译： 柔性半导体器件包括其上形成有半导体元件的绝缘膜。 绝缘膜的顶表面和底表面分别具有顶部布线图案层和底部布线图案层。 半导体元件包括形成在绝缘膜的顶表面上的半导体层，形成在绝缘膜的顶表面上以与半导体层接触的源电极和漏电极，以及形成在底表面上的栅电极 的绝缘膜与半导体层相对。 作为与源极电极，漏极电极，顶部布线图案层和底部布线图案层相对的绝缘膜的厚度的第一厚度大于第二厚度，其是第二厚度，其是绝缘膜的厚度 栅电极和半导体层。