摘要:
A flexible substrate comprises a film, a first insulating resin layer on a front face of the film, a second insulating resin layer on a rear face of the film, a front-sided wiring pattern embedded in the first insulating resin layer, and a rear-sided wiring pattern embedded in the second insulating resin layer. A surface of the front-sided wiring pattern is flush with a surface of the first insulating resin layer, and a surface of the rear-sided wiring pattern is flush with a surface of the second insulating resin layer. A part of at least one of the front-sided wiring pattern and the rear-sided wiring pattern is dented toward a part of the other of the at least one of the front-sided wiring pattern and the rear-sided wiring pattern such that a portion of the front-sided wiring pattern and a portion of the rear-sided wiring pattern are jointed to each other to form a junction.
摘要:
A flexible substrate comprises: (i) a film; (ii) an insulating resin layer formed on each of a front face of the film and a rear face of the film, which rear face is opposite to the front face; (iii) a front-sided wiring pattern embedded in the insulating resin layer formed on the front face of the film, and a rear-sided wiring pattern embedded in the insulating resin layer formed on the rear face of the film; and (iv) a via which is located between the front-sided wiring pattern and the rear-sided wiring pattern and serves to electrically interconnect the front-sided wiring pattern and the rear-sided wiring pattern, wherein the insulating resin layer formed on each of the front face and the rear face of the film is thicker than the film.
摘要:
A flexible substrate comprises a film, a first insulating resin layer on a front face of the film, a second insulating resin layer on a rear face of the film, a front-sided wiring pattern embedded in the first insulating resin layer, and a rear-sided wiring pattern embedded in the second insulating resin layer. A surface of the front-sided wiring pattern is flush with a surface of the first insulating resin layer, and a surface of the rear-sided wiring pattern is flush with a surface of the second insulating resin layer. A part of at least one of the front-sided wiring pattern and the rear-sided wiring pattern is dented toward a part of the other of the at least one of the front-sided wiring pattern and the rear-sided wiring pattern such that a portion of the front-sided wiring pattern and a portion of the rear-sided wiring pattern are jointed to each other to form a junction.
摘要:
A flexible substrate includes: (i) a film; (ii) an insulating resin layer formed on each of a front face of the film and a rear face of the film, which rear face is opposite to the front face; (iii) a front-sided wiring pattern embedded in the insulating resin layer formed on the front face of the film, and a rear-sided wiring pattern embedded in the insulating resin layer formed on the rear face of the film; and (iv) a via which is located between the front-sided wiring pattern and the rear-sided wiring pattern and serves to electrically interconnect the front-sided wiring pattern and the rear-sided wiring pattern, wherein the insulating resin layer formed on each of the front face and the rear face of the film is thicker than the film.
摘要:
A flexible substrate comprises a film, a first insulating resin layer on a front face of the film, a second insulating resin layer on a rear face of the film, a front-sided wiring pattern embedded in the first insulating resin layer, and a rear-sided wiring pattern embedded in the second insulating resin layer. A surface of the front-sided wiring pattern is flush with a surface of the first insulating resin layer, and a surface of the rear-sided wiring pattern is flush with a surface of the second insulating resin layer. A part of at least one of the front-sided wiring pattern and the rear-sided wiring pattern is dented toward a part of the other of the at least one of the front-sided wiring pattern and the rear-sided wiring pattern such that a portion of the front-sided wiring pattern and a portion of the rear-sided wiring pattern are jointed to each other to form a junction.
摘要:
A flexible substrate comprises: a film; an insulating resin layer formed on each of a front face of the film and a rear face of the film, which rear face is opposite to the front face; a front-sided wiring pattern embedded in the insulating resin layer formed on the front face of the film, and a rear-sided wiring pattern embedded in the insulating resin layer formed on the rear face of the film; and a via which is located between the front-sided wiring pattern and the rear-sided wiring pattern and serves to electrically interconnect the front-sided wiring pattern and the rear-sided wiring pattern, wherein the insulating resin layer formed on each of the front face and the rear face of the film is thicker than the film.
摘要:
A flexible substrate comprising: (i) a film; (ii) an insulating resin layer formed on each of a front face of said film and a rear face of said film which face is opposite to said front face; (iii) a front-sided wiring pattern embedded in the insulating resin layer formed on said front face of said film, and a rear-sided wiring pattern embedded in the insulating resin layer formed on said rear face of said film; and (iv) a via which is located between a front-sided wiring pattern and a rear-sided wiring pattern and serves to electrically connect between said front-sided wiring pattern and said rear-sided wiring pattern; wherein said insulating resin layer formed on each of said front face and said rear face of the said film is thicker than said film.
摘要:
A process for producing a flexible substrate comprising of a film, an insulating resin layer, and a wiring pattern, said process comprising the steps of: (a) preparing a sheet member comprising, (i) the film, (ii) the insulating resin layer formed on each of a front face of said film and a rear face of said film which face is opposite to said front face, and (iii) a front-sided wiring pattern embedded in said insulating resin layer formed on said front face of said film, and a rear-sided wiring pattern embedded in the insulating resin layer formed on said rear face of said film; and (b) pressing a part of at least one of said front-sided wiring pattern and said rear-sided wiring pattern into the inside of said sheet member so that a part of said front-sided wiring pattern and a part of said rear-sided wiring pattern are jointed to each other to form a junction.
摘要:
The invention involves mounting a solder resin composition (6) including a solder powder (5a) and a resin (4) on the first electronic component (2); arranging such that the connecting terminals (3) of the first electronic component (2) and the electrode terminals (7) of the second electronic component (8) are facing each other; ejecting a gas (9a) from a gas generation source (1) included in the first electronic component (2) by heating the first electronic component (2) and the solder resin composition; and inducing the flow of the solder powder (5a) in the solder resin composition (6) by inducing convection of the gas (9a) in the solder resin composition (6), and electrically connecting the connecting terminals (3) and the electrode terminals (7) by self-assembly on the connecting terminals (3) and the electrode terminals (7). Through this are provided a flip chip packaging method that enables connecting, with high connection reliability, electrode terminals of a semiconductor chip wired with narrow pitch and connecting terminals of a circuit board, and a bump formation method for packaging on a circuit board.
摘要:
A layered film of a three-layer clad foil formed with a first metal layer 23, a second metal layer 25, and an inorganic insulating layer 35 interposed therebetween is prepared. After the second metal layer 25 is partially etched to form a gate electrode 20g, the first metal layer 23 is partially etched to form source/drain electrodes 20s, 20d in a region corresponding to the gate electrode 20g. A semiconductor layer 40 is then formed in contact with the source/drain electrodes 20s, 20d and on the gate electrode 20g with the inorganic insulating layer 35 interposed therebetween. The inorganic insulating layer 35 on the gate electrode 20g functions as a gate insulating film 30, and the semiconductor layer 40 between the source/drain electrodes 20s, 20d on the inorganic insulating layer 35 functions as a channel.