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    SEMICONDUCTOR DEVICE
    41.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120032243A1

    公开(公告)日：2012-02-09

    申请号：US13052152

    申请日：2011-03-21

    申请人： Hiroyuki KUTSUKAKE ,  Yoshiko Kato ,  Yoshihisa Watanabe ,  Koichi Fukuda ,  Kazunori Masuda

    发明人： Hiroyuki KUTSUKAKE ,  Yoshiko Kato ,  Yoshihisa Watanabe ,  Koichi Fukuda ,  Kazunori Masuda

    IPC分类号： H01L29/94

    CPC分类号： H01L27/11526 ,  H01L27/11521 ,  H01L27/11529

    摘要： According to one embodiment, a semiconductor device includes at least one semiconductor region provided in a semiconductor substrate, and a capacitor group including a plurality of capacitors provided in the semiconductor region, each capacitor including a capacitor insulating film provided on the semiconductor region, a capacitor electrode provided on the capacitor insulating film, and at least one diffusion layer provided in the semiconductor region adjacent to the capacitor electrode.

    摘要翻译： 根据一个实施例，半导体器件包括设置在半导体衬底中的至少一个半导体区域和包括设置在半导体区域中的多个电容器的电容器组，每个电容器包括设置在半导体区域上的电容器绝缘膜，电容器 设置在电容器绝缘膜上的电极以及设置在与电容器电极相邻的半导体区域中的至少一个扩散层。

    Semiconductor memory device capable of compensating variation with time of program voltage
    42.
    发明授权
    Semiconductor memory device capable of compensating variation with time of program voltage 失效
    能够补偿编程电压随时间变化的半导体存储器件

    公开(公告)号：US08102719B2

    公开(公告)日：2012-01-24

    申请号：US12683022

    申请日：2010-01-06

    申请人： Yoshihisa Watanabe

    发明人： Yoshihisa Watanabe

    IPC分类号： G11C16/10

    CPC分类号： G11C16/3418 ,  G11C16/10

    摘要： A voltage generating circuit generates, at a time of write, a first voltage which is higher than a program voltage, and generates an erase voltage at a time of erase. A first transistor has a current path and a gate, and the first voltage generated by the voltage generating circuit is supplied to one end of the current path and the gate of the first transistor. The first transistor outputs the program voltage from the other end of the current path thereof. A driving transistor has one end of a current path thereof connected to a word line, and has a gate supplied with the first voltage. The driving transistor has the other end of the current path supplied with the program voltage. Stress applying portion applies the erase voltage to the other end of the current path of the first transistor at the time of erase.

    摘要翻译： 电压产生电路在写入时产生高于编程电压的第一电压，并在擦除时产生擦除电压。 第一晶体管具有电流路径和栅极，并且由电压产生电路产生的第一电压被提供给电流路径的一端和第一晶体管的栅极。 第一晶体管从其电流路径的另一端输出编程电压。 驱动晶体管的电流路径的一端连接到字线，并且具有提供有第一电压的栅极。 驱动晶体管具有提供有编程电压的电流通路的另一端。 应力施加部分在擦除时将擦除电压施加到第一晶体管的电流路径的另一端。

    Nonvolatile semiconductor memory, its read method and a memory card
    44.
    发明授权
    Nonvolatile semiconductor memory, its read method and a memory card 失效
    非易失性半导体存储器，其读取方式和存储卡

    公开(公告)号：US07903469B2

    公开(公告)日：2011-03-08

    申请号：US11838510

    申请日：2007-08-14

    申请人： Makoto Iwai ,  Yoshihisa Watanabe

    发明人： Makoto Iwai ,  Yoshihisa Watanabe

    IPC分类号： G11C16/26

    CPC分类号： G11C16/3418 ,  G11C16/3427

    摘要： A nonvolatile semiconductor memory includes a memory cell array having a plurality of NAND cell units which are arranged with a plurality of memory cells connected in series and a first selection transistor and a second selection transistor which are each connected to both ends of the plurality of memory cells respectively, a plurality of word lines and a plurality of bit lines which are connected to the plurality of memory cells and a data read control part wherein at least one of the memory cells is selected and when data is read from that memory cell a read pass voltage is applied to a word line which is connected to a non-selected memory cell other than the selected memory cell, and after applying the read pass voltage a voltage is applied to a control gate of the first selection transistor or the second selection transistor, and when applying the read pass voltage, the read pass voltage which is applied to the word line which is connected to at least one of the non-selected memory cells which is adjacent to the first selection transistor or the second selection transistor, is made lower than the read pass voltage which is applied to the word line which is connected to another cell of the non-selected memory cells.

    摘要翻译： 非易失性半导体存储器包括存储单元阵列，该存储单元阵列具有多个与单元串联连接的NAND单元单元，第一选择晶体管和第二选择晶体管分别连接到多个存储器的两端 分别连接到多个存储单元的多个字线和多个位线，以及数据读取控制部分，其中至少一个存储器单元被选择，并且当从该存储器单元读取数据时读取 将通过电压施加到连接到除所选存储单元之外的未选择的存储单元的字线，并且在施加读取通过电压之后，将电压施加到第一选择晶体管或第二选择晶体管的控制栅极 ，并且当应用读通过电压时，施加到连接到未选择存储器中的至少一个的字线的读通过电压 使与第一选择晶体管或第二选择晶体管相邻的单元小于施加到连接到未选择的存储单元的另一单元的字线的读通过电压。

    NONVOLATILE SEMICONDUCTOR MEMORY, METHOD FOR READING OUT THEREOF, AND MEMORY CARD
    45.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY, METHOD FOR READING OUT THEREOF, AND MEMORY CARD 失效
    非易失性半导体存储器，其读出方法和存储卡

    公开(公告)号：US20090154241A1

    公开(公告)日：2009-06-18

    申请号：US12361362

    申请日：2009-01-28

    申请人： Makoto IWAI ,  Yoshihisa Watanabe

    发明人： Makoto IWAI ,  Yoshihisa Watanabe

    IPC分类号： G11C16/04 ,  G11C16/06 ,  G11C7/00

    CPC分类号： G11C16/0483 ,  G11C11/5642 ,  G11C16/26

    摘要： A nonvolatile semiconductor memory includes: a memory cell unit including a plurality of memory cells having an electric charge accumulation layer and a control electrode, said memory cells being electrically connected in series; a plurality of word lines, each of which is electrically connected to said control electrode of said plurality of memory cells; a source line electrically connected to said memory cells at one end of said memory cell unit; a bit line electrically connected to said memory cells at the other end of said memory cell unit; and a control signal generation circuit, which during a data readout operation staggers a timing for selecting the word line connected to said memory cells of said memory cell unit from a timing for selecting a non-selected word line connected to a non-selected memory.

    摘要翻译： 非易失性半导体存储器包括：存储单元单元，包括具有电荷累积层和控制电极的多个存储单元，所述存储单元串联电连接; 多个字线，其各自电连接到所述多个存储单元的所述控制电极; 在所述存储单元单元的一端电连接到所述存储单元的源极线; 在所述存储单元单元的另一端电连接到所述存储单元的位线; 以及控制信号生成电路，其在数据读出操作期间，从连接到未选择的存储器的未选择的字线的选择时刻开始，选择连接到所述存储单元的所述存储单元的字线的定时。

    NONVOLATILE SEMICONDUCTOR MEMORY, METHOD FOR READING OUT THEREOF, AND MEMORY CARD
    46.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY, METHOD FOR READING OUT THEREOF, AND MEMORY CARD 有权
    非易失性半导体存储器，其读出方法和存储卡

    公开(公告)号：US20070133288A1

    公开(公告)日：2007-06-14

    申请号：US11558714

    申请日：2006-11-10

    申请人： Makoto IWAI ,  Yoshihisa Watanabe

    发明人： Makoto IWAI ,  Yoshihisa Watanabe

    IPC分类号： G11C16/04

    CPC分类号： G11C16/0483 ,  G11C11/5642 ,  G11C16/26

    摘要： A nonvolatile semiconductor memory includes: a memory cell unit including a plurality of memory cells having an electric charge accumulation layer and a control electrode, said memory cells being electrically connected in series; a plurality of word lines, each of which is electrically connected to said control electrode of said plurality of memory cells; a source line electrically connected to said memory cells at one end of said memory cell unit; a bit line electrically connected to said memory cells at the other end of said memory cell unit; and a control signal generation circuit, which during a data readout operation staggers a timing for selecting the word line connected to said memory cells of said memory cell unit from a timing for selecting a non-selected word line connected to a non-selected memory.

    摘要翻译： 非易失性半导体存储器包括：存储单元单元，包括具有电荷累积层和控制电极的多个存储单元，所述存储单元串联电连接; 多个字线，其各自电连接到所述多个存储单元的所述控制电极; 在所述存储单元单元的一端电连接到所述存储单元的源极线; 在所述存储单元单元的另一端电连接到所述存储单元的位线; 以及控制信号生成电路，其在数据读出操作期间，从连接到未选择的存储器的未选择的字线的选择时刻开始，选择连接到所述存储单元的所述存储单元的字线的定时。

    ELECTRIC ACTUATOR
    47.
    发明申请
    ELECTRIC ACTUATOR 审中-公开
    电动执行器

    公开(公告)号：US20060238051A1

    公开(公告)日：2006-10-26

    申请号：US11382503

    申请日：2006-05-10

    申请人： Naoto Sesita ,  Katuyuki Tanaka ,  Yusuke Mizukoshi ,  Hiroyuki Kurihara ,  Yoshihisa Watanabe

    发明人： Naoto Sesita ,  Katuyuki Tanaka ,  Yusuke Mizukoshi ,  Hiroyuki Kurihara ,  Yoshihisa Watanabe

    IPC分类号： H02K5/10 ,  H02K5/00

    CPC分类号： H02K7/1166 ,  Y10T74/19828

    摘要： An electric motor comprises a motor case having a motor shaft and a gear case assembled with the motor case detachably. The motor shaft comprises a base end, an intermediate portion, and a remote end which are supported by the first, the second and the third bearing devices, respectively. The third bearing device has a slide bearing, a cap, an adjusting screw, and a lock nut. The adjusting screw stabilizes an axial clearance of the motor shaft. The slide bearing is engaged in a larger diameter bore of a shaft bore.

    摘要翻译： 一种电动机包括具有电动机轴的电动机壳体和可拆卸地与电动机壳体组装的齿轮箱。 电动机轴包括分别由第一，第二和第三轴承装置支撑的基端，中间部分和远端。 第三轴承装置具有滑动轴承，盖子，调节螺钉和锁紧螺母。 调节螺丝稳定电机轴的轴向间隙。 滑动轴承接合在轴孔的较大直径的孔中。

    1-Substituted 4-carbamoyl-1,2,4-triazol-5-one derivatives and herbicide
    49.
    发明授权
    1-Substituted 4-carbamoyl-1,2,4-triazol-5-one derivatives and herbicide 有权
    1-取代的4-氨基甲酰基-1,2,4-三唑-5-酮衍生物和除草剂

    公开(公告)号：US6077814A

    公开(公告)日：2000-06-20

    申请号：US367822

    申请日：1999-08-23

    申请人： Ken Morita ,  Tsunehiro Kido ,  Kazuo Hirayama ,  Hiroyuki Okita ,  Toshiharu Ohno ,  Yoshihisa Watanabe ,  Masahide Onoe

    发明人： Ken Morita ,  Tsunehiro Kido ,  Kazuo Hirayama ,  Hiroyuki Okita ,  Toshiharu Ohno ,  Yoshihisa Watanabe ,  Masahide Onoe

    IPC分类号： A01N47/38 ,  C07D249/12 ,  C07D401/12 ,  A01N35/04 ,  A01N43/653

    CPC分类号： C07D401/12 ,  A01N47/38 ,  C07D249/12

    摘要： A 1-phenyl, naphthyl or aralkyl-4-(N,N-di-substituted carbamoyl)-1,2,4-triazol-5-one derivative represented by the general formula (I) ##STR1## wherein A is an unsubstituted or substituted phenyl group, 1-naphthyl group, 5,6,7,8-tetrahydro-1-naphthyl group or an aralkyl group such as an unsubstituted or substituted benzyl group and so on, R.sub.1 is a lower alkyl group and so on, and R.sub.2 is an unsubstituted or substituted phenyl group and so on, was prepared as novel compounds. This 1-substituted-4-carbamoyl-1,2,4-triazol-5-one derivative does not substantially exhibit phytotoxicity to various agricultural crop plants and therefore is useful as a selective herbicide.

    摘要翻译： PCT No.PCT / JP98 / 00803 Sec。 371日期1999年8月23日 102（e）日期1999年8月23日PCT提交1998年2月26日PCT公布。 公开号WO98 / 38176 日期：1998年9月3日由通式（I）表示的1-苯基，萘基或芳烷基-4-（N，N-二取代氨基甲酰基）-1,2,4-三唑-5-酮衍生物，其中A为 未取代或取代的苯基，1-萘基，5,6,7,8-四氢-1-萘基或芳烷基如未取代或取代的苄基等，R 1为低级烷基等 并且R2是未取代或取代的苯基等，作为新化合物制备。 该1-取代-4-氨基甲酰基-1,2,4-三唑-5-酮衍生物基本上不显示对各种农作物植物的植物毒性，因此可用作选择性除草剂。

    Method of alkylating of triazine derivatives
    50.
    发明授权
    Method of alkylating of triazine derivatives 失效
    烷基化三嗪衍生物的方法

    公开(公告)号：US5792867A

    公开(公告)日：1998-08-11

    申请号：US571828

    申请日：1996-02-05

    申请人： Norio Tanaka ,  Masataka Hatanaka ,  Makoto Ishikawa ,  Yasuo Fukue ,  Isao Hashiba ,  Yoshihisa Watanabe

    发明人： Norio Tanaka ,  Masataka Hatanaka ,  Makoto Ishikawa ,  Yasuo Fukue ,  Isao Hashiba ,  Yoshihisa Watanabe

    IPC分类号： C07D251/16 ,  C07D251/18 ,  C07D251/52 ,  C07D251/70 ,  C07D251/54

    CPC分类号： C07D251/70 ,  C07D251/16 ,  C07D251/18 ,  C07D251/52

    摘要： A method for alkylation of at least one or more amino groups or mono-substituted amino groups, each on a carbon atom of a triazine ring of 1,3,5-triazine derivatives (melamine, melamine derivatives and various kinds of guanamine derivatives and the like), which includes reacting the 1,3,5-triazine derivatives having at least one or more amino groups or mono-substituted amino groups with alcohols in the presence of a catalyst of a metal of group VII and/or group VIII in the periodic table. The object of the invention is to provide a method for alkylation of 1,3,5-triazine derivatives, which includes alkylating amino groups or mono-substituted amino groups in carbon atoms of a 1,3,5-triazine ring, whereby substituted 1,3,5-triazine derivatives which are a group of useful compounds and which are widely used as intermediates of fine chemicals such as agricultural chemicals, medications, dye-stuffs, paints and the like, as resin materials and as flame-retardant materials can be easily produced in high yields.

    摘要翻译： PCT No.PCT / JP94 / 01190 Sec。 371日期：1996年2月5日 102（e）日期1996年2月5日PCT提交1994年7月20日PCT公布。 出版物WO95 / 03287 日期1995年2月2日在1,3,5-三嗪衍生物（三聚氰胺，三聚氰胺衍生物等）的三嗪环的碳原子上烷基化至少一个以上的氨基或单取代氨基的方法 胍胺衍生物等），其包括使具有至少一个或多个氨基或单取代氨基的1,3,5-三嗪衍生物与醇在VII族金属和/ 或周期表中的VIII族。 本发明的目的是提供一种1,3,5-三嗪衍生物的烷基化方法，其包括在1,3,5-三嗪环的碳原子中烷基化氨基或单取代氨基，由此取代1 作为有用化合物的一组的3,5-三嗪衍生物，广泛用作农药，药物，染料，油漆等精细化学品的中间体作为树脂材料和阻燃材料， 容易以高产量生产。