摘要:
A detection circuit includes a detection terminal to which an alternating current signal from a physical quantity transducer is input, a detection current/voltage conversion amplifier circuit that converts the alternating current signal input through the detection terminal into a voltage signal, an evaluation terminal that supplies an evaluation voltage signal to the detection current/voltage conversion amplifier circuit, an input resistor that has a given resistance ratio with respect to a feedback resistor; and a switch circuit of the detection circuit provided in a signal path that connects the evaluation terminal and an input node of the detection current/voltage conversion amplifier circuit.
摘要:
A driver device that forms an oscillation loop with a vibrator and causes the vibrator to produce driving vibrations includes a current-voltage converter that is provided in the oscillation loop and converts a current that flows through the vibrator into a voltage, and a GCA as a comparator that is provided in the oscillation loop and outputs a signal corresponding to a comparison result between an output from the current-voltage converter and a given voltage. The GCA outputs a first high-level voltage or a low-level voltage during oscillation startup, and outputs a second high-level voltage or the low-level voltage in a steady oscillation state. The first high-level voltage is a voltage higher in potential than the second high-level voltage.
摘要:
An oscillation driver circuit that drives a physical quantity transducer includes a one-input/two-output comparator. The one-input/two-output comparator includes a shared differential section that compares a voltage signal input from a drive current/voltage conversion amplifier circuit with a given voltage, a first output section that receives a signal output from the differential section, variably adjusts a voltage amplitude of the received signal, and outputs the resulting signal, and a second output section that receives the signal output from the differential section, and outputs a synchronous detection reference signal of which the voltage amplitude is fixed.
摘要:
In a plasma processing method, on a back side of a cathode electrode is provided at least one conductor plate d.c. potentially insulated from the cathode electrode and an opposing electrode, and the cathode electrode and the conductor plate are enclosed with a shielding wall such that a ratio of an inter-electrode coupling capacitance provided by the cathode electrode and the opposing electrode to a coupling capacitance provided by the cathode electrode and a bottom surface of the shielding wall on the back side of the conductor plate is not less than a predetermined value. Thereby, a high-quality, high-speed plasma processing is realized.
摘要:
There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
摘要:
A detection circuit includes a detection terminal to which an alternating current signal from a physical quantity transducer is input, a detection current/voltage conversion amplifier circuit that converts the alternating current signal input through the detection terminal into a voltage signal, an evaluation terminal that supplies an evaluation voltage signal to the detection current/voltage conversion amplifier circuit, an input resistor that has a given resistance ratio with respect to a feedback resistor; and a switch circuit of the detection circuit provided in a signal path that connects the evaluation terminal and an input node of the detection current/voltage conversion amplifier circuit.
摘要:
An image processing device and method are provided. In a method of reading an image signal from a solid-state image-pickup element where a plurality of unit pixels including a transistor for detecting a light signal and a photo diode are arranged in a matrix, shift data applied to a line for reading out an image signal, which outputs a signal for selecting a line for reading out an image signal, is output to a shift register connected to a line for reading out an image signal, when the number of lines between line for reading out an image signal and line for clearing an image signal are equal to or less than the number of lines in the matrix and the condition for picking an image up is changed.
摘要:
A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.
摘要:
A semiconductor device having an isolation region formed in a semiconductor substrate and a capacitance device formed above that isolation region. The capacitance device has a first capacitor conductive layer disposed above the isolation region and a second capacitor conductive layer in the shape of a side wall formed along one side surface of the first capacitor conductive layer. The second capacitor conductive layer is disposed facing the first capacitor conductive layer, with a first capacitor insulating layer interposed.
摘要:
A non-volatile semiconductor memory device enabling reading at high speed has a memory cell array including a plurality of memory cells arranged in a column direction and a row direction, each of the memory cells having first and second non-volatile memory elements that are controlled by one word gate and first and second control gates. One of the first and second non-volatile memory elements stores data, but the other does not function as an element which stores data.