公开(公告)号：US20130134411A1

公开(公告)日：2013-05-30

申请号：US13640868

申请日：2011-04-05

申请人： Okifumi Nakagawa ,  Yoshifumi Ohta ,  Yoshimasa Chikama ,  Tsuyoshi Inoue ,  Masahiko Suzuki ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Yoshinobu Miyamoto ,  Hinae Mizuno

发明人： Okifumi Nakagawa ,  Yoshifumi Ohta ,  Yuuji Mizuno ,  Yoshimasa Chikama ,  Tsuyoshi Inoue ,  Masahiko Suzuki ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Yoshinobu Miyamoto

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/66742

摘要： A semiconductor device (100A) according to the present invention includes an oxide semiconductor layer (31a), first and second source electrodes (52a1 and 52a2), and first and second drain electrodes (53a1 and 53a2). The second source electrode (52a2) is formed to be in contact with a top surface of the first source electrode and inner to the first source electrode (52a1). The second drain electrode (53a2) is formed to be in contact with a top surface of the first drain electrode (53a1) and inner to the first drain electrode (53a1). The oxide semiconductor layer (31a) is formed to be in contact with the top surface of the first source electrode (52a1) and the top surface of the first drain electrode (53a1).

摘要翻译： 根据本发明的半导体器件（100A）包括氧化物半导体层（31a），第一和第二源电极（52a1和52a2）以及第一和第二漏电极（53a1和53a2）。 第二源电极（52a2）形成为与第一源电极的顶表面接触并且在第一源电极（52a1）内部。 第二漏电极（53a2）形成为与第一漏电极（53a1）的顶表面接触并且在第一漏极电极（53a1）的内部。 氧化物半导体层（31a）形成为与第一源电极（52a1）的顶表面和第一漏电极（53a1）的顶表面接触。

公开(公告)号：US08441016B2

公开(公告)日：2013-05-14

申请号：US13383077

申请日：2010-07-08

申请人： Tsuyoshi Inoue ,  Tohru Okabe ,  Tetsuya Aita ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

发明人： Tsuyoshi Inoue ,  Tohru Okabe ,  Tetsuya Aita ,  Michiko Takei ,  Yoshiyuki Harumoto ,  Takeshi Yaneda

IPC分类号： H01L33/08

CPC分类号： H01L29/78627 ,  G02F1/1368 ,  G02F2202/104 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78624

摘要： Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer (34) that contains a channel region (34C) having a microcrystalline semiconductor; source and drain contact layers (35S and 35D) that contains impurities; a first source metal layer (36S) and a first drain metal layer (36D), and a second source metal layer (37S) and a second drain metal layer (37D). The end portion of the second metal source layer (37S) is located at a position receded from the end portion of the first metal source layer (36S) and the end portion of the second drain metal layer (37D) is located at a position receded from the end portion of the first drain metal layer (36D). The semiconductor layer (34) contains low concentration impurity diffusion regions formed near the end portions of the aforementioned source contact layer (35S) and drain contact layer (35D).

摘要翻译： 公开了一种其中泄漏电流最小化的高品质，高效制造的薄膜晶体管。 薄膜晶体管设置有包含具有微晶半导体的沟道区（34C）的半导体层（34） 源极和漏极接触层（35S和35D），其含有杂质; 第一源极金属层（36S）和第一漏极金属层（36D）以及第二源极金属层（37S）和第二漏极金属层（37D）。 第二金属源层（37S）的端部位于从第一金属源层（36S）的端部退出的位置，第二漏极金属层（37D）的端部位于退出的位置 从第一漏极金属层（36D）的端部开始。 半导体层（34）包含在上述源极接触层（35S）和漏极接触层（35D）的端部附近形成的低浓度杂质扩散区域。

公开(公告)号：US20130026462A1

公开(公告)日：2013-01-31

申请号：US13581094

申请日：2011-02-14

申请人： Michiko Takei ,  Yoshimasa Chikama ,  Tsuyoshi Inoue ,  Masahiko Suzuki ,  Okifumi Nakagawa ,  Yoshifumi Ohta ,  Yoshiyuki Harumoto ,  Hinae Mizuno

发明人： Michiko Takei ,  Yuuji Mizuno ,  Yoshimasa Chikama ,  Tsuyoshi Inoue ,  Masahiko Suzuki ,  Okifumi Nakagawa ,  Yoshifumi Ohta ,  Yoshiyuki Harumoto

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A method for manufacturing a thin film transistor includes the step of forming a gate electrode (11aa) on an insulating substrate, the step of forming a gate insulating layer (12) to cover the gate electrode (11aa), and thereafter, forming an oxide semiconductor layer (13a) on the gate insulating layer (12), the step of forming a source electrode (16aa) and a drain electrode (16b) on the oxide semiconductor layer (13a) by dry etching, with a channel region (C) of the oxide semiconductor layer being exposed, and the step of supplying oxygen radicals to a channel region of the oxide semiconductor layer.

摘要翻译： 制造薄膜晶体管的方法包括在绝缘基板上形成栅电极（11aa）的步骤，形成栅极绝缘层（12）以覆盖栅极（11aa）的步骤，然后形成氧化物 在栅绝缘层（12）上的半导体层（13a），通过干蚀刻在氧化物半导体层（13a）上形成源电极（16aa）和漏电极（16b）的步骤，具有沟道区（C） 的氧化物半导体层露出的步骤，以及向氧化物半导体层的沟道区域供给氧自由基的步骤。

公开(公告)号：US20130019647A1

公开(公告)日：2013-01-24

申请号：US13639198

申请日：2011-04-06

申请人： Tsuyoshi Inoue ,  Yasuyuki Muramatsu

发明人： Tsuyoshi Inoue ,  Yasuyuki Muramatsu

IPC分类号： B21B45/02

CPC分类号： B05B12/084 ,  B21B27/10 ,  B21B37/32 ,  B21B2267/10 ,  F16N7/34

摘要： Equipment for supplying lubricant for a rolling mill 20 of a rolling mill of a flat shaped metal material M comprises a plurality of spray nozzles 1a and 1b which spray a lubricant toward a rolling roll together with a gas in a particulate or atomized state, a lubricant feed device 2, 3, and 4 which feeds the spray nozzles a lubricant, and a gas feed device 5 and 6 which feeds the spray nozzles a gas. In the present invention, the amount of lubricant supplied from the side spray nozzles among the spray nozzles are made larger than the lubricant feed rate from the center spray nozzle. Further, the amount of lubricant supplied from the spray nozzles between these side spray nozzles and center spray nozzle are made not more than the amount of lubricant supplied from the side spray nozzles and not less than the lubricant feed rate from the center spray nozzle. Due to this, uneven wear and roughness is kept from occurring at the rolling roll in the axial direction of the rolling roll.

摘要翻译： 用于为平板状金属材料M的轧机的轧机20供给润滑剂的设备包括多个喷雾嘴1a和1b，其将喷射润滑剂与颗粒状或雾化状态的气体一起滚动到轧辊上，润滑剂 供给装置2,3和4，其将喷嘴喷入润滑剂;以及气体供给装置5和6，其向喷嘴喷射气体。 在本发明中，从喷雾喷嘴的侧喷嘴供给的润滑剂的量比从中心喷嘴的润滑剂供给量大。 此外，从这些侧喷嘴和中心喷嘴之间的喷嘴供应的润滑剂的量不大于从侧喷嘴供应的润滑剂的量，并且不小于来自中心喷嘴的润滑剂进料速率。 由此，轧制辊在轧制辊的轴向上不发生不均匀的磨损和粗糙度。

公开(公告)号：US20120280441A1

公开(公告)日：2012-11-08

申请号：US13516632

申请日：2010-12-15

申请人： Tsuyoshi Inoue

发明人： Tsuyoshi Inoue

IPC分类号： B60G11/42

CPC分类号： F16F9/54 ,  B60G13/003 ,  B60G15/067 ,  B60G2204/128 ,  B60G2204/418 ,  B60G2206/013 ,  B60G2206/41 ,  B60G2206/82 ,  B60G2206/91 ,  F16F1/38

摘要： Disclosed is a strut mount wherein an inclination of an outer circumferential surface of an outer cylinder (2) with respect to the central axis of the outer cylinder (2) is greater than that of an inner circumferential surface of a tapered sidewall (12) of a vehicle body panel (10) which is shaped like an inverted dish. When the strut mount is positioned to be fitted to the vehicle body panel (10), the elastic member (4) is brought into contact with the inner surface of the vehicle body panel (10) only at a portion (4a) of the elastic member (4) that covers the outer circumferential surface of the outer cylinder (2).

摘要翻译： 公开了一种支柱安装件，其中外筒（2）的外圆周表面相对于外筒（2）的中心轴线的倾斜度大于锥形侧壁（12）的内圆周表面的倾斜度 车身板（10），其形状类似于倒盘。 当支柱安装件被定位成装配到车体面板（10）时，弹性构件（4）仅在弹性构件（4）的部分（4a）处与车身面板（10）的内表面接触 构件（4），其覆盖外筒（2）的外周面。

公开(公告)号：US08091212B2

公开(公告)日：2012-01-10

申请号：US12147013

申请日：2008-06-26

申请人： Hidetake Kikuchi ,  Toshihiko Terashita ,  Tsuyoshi Inoue ,  Takashi Kawamura

发明人： Hidetake Kikuchi ,  Toshihiko Terashita ,  Tsuyoshi Inoue ,  Takashi Kawamura

IPC分类号： H01H11/00 ,  H01H65/00

CPC分类号： H01H13/48 ,  H01H13/88 ,  H01H2205/026 ,  H01H2215/036 ,  H01H2229/02 ,  H01H2229/034 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49155 ,  Y10T29/49204 ,  Y10T156/108

摘要： A method of manufacturing a panel switch is provided. The panel switch includes insulating films and a base layer having a stationary contact. Each insulating film includes an adhesive layer, and an apex portion of a moving contact adhered to the adhesive layer. The insulating films are aligned and adhered on top of each other and the adhered insulating films are aligned and adhered to the base layer such that the locations of the moving contacts of the respective insulating films align with the stationary contact of the base layer. The method includes applying an adhesive layer to an insulating film; adhering a moving contact onto the adhesive layer; aligning the moving contact with a stationary contact of a base member and adhering the insulating film to the base member; and cutting and removing an excess portion from the insulating film with a laser.

摘要翻译： 提供一种制造面板开关的方法。 面板开关包括绝缘膜和具有固定触点的基底层。 每个绝缘膜包括粘合剂层和粘附到粘合剂层的可移动接触的顶点部分。 绝缘膜对准并粘附在彼此之上，并且粘附的绝缘膜对准并粘附到基底层，使得各个绝缘膜的可移动触点的位置与基底层的固定触点对准。 该方法包括将粘合剂层施加到绝缘膜上; 将移动的接触粘附到粘合剂层上; 将可移动接触件与基座部件的固定接触件对准，并将绝缘膜粘合到基部部件上; 并用激光从绝缘膜切割并除去多余的部分。

公开(公告)号：US20120001190A1

公开(公告)日：2012-01-05

申请号：US13259154

申请日：2010-02-09

申请人： Tohru Okabe ,  Takeshi Yaneda ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto

发明人： Tohru Okabe ,  Takeshi Yaneda ,  Tetsuya Aita ,  Tsuyoshi Inoue ,  Yoshiyuki Harumoto

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L21/02532 ,  H01L21/02678 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： The invention provides a thin film transistor that can improve its operating speed by improving crystallinity near a bottom surface of a channel layer. Of laser light irradiated onto an amorphous silicon layer, light transmitted through the amorphous silicon layer is absorbed by a gate electrode 130 and thereby produces heat. Since the gate electrode 130 is made of a titanium layer 102 with a low thermal conductivity, the produced heat is less likely to be transmitted through a gate wiring line 110 and dissipated and thus increases the temperature of the gate electrode 130. Radiant heat from the gate electrode 130 is provided to a bottom surface of the amorphous silicon layer and thus the amorphous silicon layer is also heated from its bottom surface. As a result, an amorphous silicon layer 106a melts not only from its top surface but also from its bottom surface and is solidified, whereby crystallization proceeds, and thus, the amorphous silicon layer 106a turns into a polycrystalline silicon layer 106b. Hence, the mobility near a bottom surface of the polycrystalline silicon layer 106b also increases, improving the operating speed of a thin film transistor 100.

摘要翻译： 本发明提供一种薄膜晶体管，其可以通过改善沟道层底表面附近的结晶度来提高其工作速度。 照射到非晶硅层上的激光，透过非晶硅层的光被栅电极130吸收，从而产生热量。 由于栅电极130由具有低热导率的钛层102制成，所产生的热不太可能通过栅极布线110透射并消散，因此增加了栅电极130的温度。来自 栅电极130被提供到非晶硅层的底表面，因此非晶硅层也从其底表面加热。 结果，非晶硅层106a不仅从其顶表面而且从其底表面熔化并且固化，从而进行结晶，因此非晶硅层106a变成多晶硅层106b。 因此，多晶硅层106b的底表面附近的迁移率也增加，提高了薄膜晶体管100的工作速度。

公开(公告)号：US20110008020A1

公开(公告)日：2011-01-13

申请号：US12865879

申请日：2009-08-10

申请人： Tsuyoshi Inoue ,  Jun Ozawa

发明人： Tsuyoshi Inoue ,  Jun Ozawa

IPC分类号： H04N5/76 ,  G10L11/00

CPC分类号： G11B27/105 ,  G06F17/30781 ,  G11B27/322 ,  H04N5/76

摘要： The related scene addition apparatus capable of extracting a related scene even when information on a moving image content having no information related to each scene, such as text information, has been retrieved includes: an operation record storage unit (105) storing operation records of information retrieval by the user who is watching the video; a retrieved result storage unit (103) storing a result of the information retrieval to be transmitted to another terminal; a retrieval start time estimating unit (107) estimating the time when the user starts retrieving information corresponding to the result, using the operation records stored by the operation record storage unit (105); a related scene extracting unit (108) extracting a scene of the video at the estimated retrieval start time; and a retrieval result output unit (111) providing the result of information added with the related scene in order to transmit the provided result to another terminal.

摘要翻译： 即使已经检索到与没有与每个场景有关的信息的运动图像内容的信息已经被检索到的能够提取相关场景的相关场景添加设备包括：操作记录存储单元，存储信息的操作记录 正在观看视频的用户检索; 存储要发送到另一终端的信息检索结果的检索结果存储单元（103） 检索开始时间估计单元，使用由操作记录存储单元存储的操作记录，估计用户开始检索对应于结果的信息的时间; 相关场景提取单元（108）在估计的检索开始时间提取视频的场景; 以及提供与相关场景相关的信息的结果的检索结果输出单元（111），以将提供的结果发送到另一终端。

公开(公告)号：US07813928B2

公开(公告)日：2010-10-12

申请号：US11628887

申请日：2005-06-02

申请人： Yoshiyuki Okimoto ,  Tsuyoshi Inoue ,  Takashi Tsuzuki

发明人： Yoshiyuki Okimoto ,  Tsuyoshi Inoue ,  Takashi Tsuzuki

IPC分类号： G10L15/04

CPC分类号： G10L15/22 ,  G10L2015/0631 ,  G10L2015/221

摘要： A speech recognition device presenting whether a user's utterance is an unregistered word and whether the utterance should be repeated. The device includes a vocabulary storage unit (102) defining a vocabulary for speech recognition, and a speech recognition unit (101) checking the uttered speech against registered words. The device also includes a similarity calculation unit (103) calculating a similarity between the uttered speech and acoustic units, a judgment unit (104) judging, based on the check by the speech recognition unit (101) and the calculation performed by the similarity calculation unit (103), whether the uttered speech is a registered or unregistered word, an unregistered word unit (106) storing unregistered words, an unregistered word candidate search unit (105) searching the unregistered word unit (106) for unregistered word candidates, the, when the judgment unit (104) judges that the uttered speech is an unregistered word, and a display unit (107) displaying the result.

摘要翻译： 一种语音识别装置，用于呈现用户的话语是否是未注册的单词，以及是否应重复发音。 该设备包括定义用于语音识别的词汇表的词汇存储单元（102），以及语音识别单元（101），针对登录的单词检查发言的语音。 该装置还包括计算发声语音和声音单元之间的相似度的相似度计算单元（103），判断单元（104）基于语音识别单元（101）的检查和通过相似性计算执行的计算 单元（103），发言的语音是否是已注册的或未注册的字，存储未注册字的未注册字单元（106），未注册单词单元（105）搜索未注册单词候选的未注册单词候选搜索单元（105） 当判断单元（104）判断发言的语音是未注册的单词时，以及显示单元（107）显示结果。

公开(公告)号：US20060229324A1

公开(公告)日：2006-10-12

申请号：US10529946

申请日：2003-10-02

申请人： Akiko Itai ,  Susumu Muto ,  Tsuyoshi Inoue ,  Yoshihiro Urade

发明人： Akiko Itai ,  Susumu Muto ,  Tsuyoshi Inoue ,  Yoshihiro Urade

IPC分类号： A61K31/517 ,  C07D403/02

CPC分类号： C07D239/92 ,  C07D403/12

摘要： A medicament having an inhibitory activity against hematopoietic prostaglandin D2 synthase, which comprises as an active ingredient a compound represented by the following general formula (I) or a salt thereof: wherein X represents a group represented by the formula —N═C(R5)— or the formula —NH—CH(R5)—, R1, R2, R3, and R4 represent a hydrogen atom, a halogen atom, a C1 to C6 alkyl group, or a hydroxy group, R5 represents a C1 to C6 alkyl group or a C6 to C10 aryl group, and R represents an amino group.

摘要翻译： 一种具有对造血前列腺素D2合成酶的抑制活性的药物，其包含作为活性成分的由以下通式（I）表示的化合物或其盐：其中X表示由式-NC（R） 5） - 或式-NH-CH（R 5） - ，R 1，R 2，R SUP > 3，R 4表示氢原子，卤素原子，C 1〜C 6烷基，或者 羟基，R 5表示C 6〜C 6烷基或C 6〜C 6烷基， R 10是芳基，R表示氨基。