公开(公告)号：US5346147A

公开(公告)日：1994-09-13

申请号：US114962

申请日：1993-09-02

申请人： Tsuyoshi Ishikawa ,  Akio Kinouchi

发明人： Tsuyoshi Ishikawa ,  Akio Kinouchi

IPC分类号： B02C17/16 ,  B02C17/00

CPC分类号： B02C17/168

摘要： A crushing apparatus crushes a supplied material into the form of a fine powder. The material is supplied into a crushing tank while disposing the crushing tank within the processing tank. The supplied material is crushed within the crushing tank and then is discharged to the interior of the processing tank through the axial flow pump member and an axial flow promoting member. During operation, the material is continuously circulated within the processing tank in a manner passing through the crushing tank, whereby crushing is performed in such circulating process. Since the axial flow pump member is provided at the lower portion of the crushing tank, the material in the inclined casing is guided axially downward to generate an axial flow when the inclined vane is rotated. A pumping effect is provided by the axial flow. The crushed material is sucked to the side of the inclined casing and then is emitted downward. When the axial flow promoting member is provided at the lower portion of the crushing tank, it is possible to strengthen the sucking force within the inclined casing. The material within the inclined casing is actively discharged by the rotation of the turbine vane positioned at a downward opening portion of the inclined casing.

摘要翻译： 破碎装置将供给的材料粉碎成细粉末的形式。 在将破碎槽放置在处理槽内的同时，将该材料供给到破碎槽中。 所供给的材料在破碎槽内破碎，然后通过轴流泵构件和轴向流动促进构件排出到处理槽的内部。 在操作中，材料以通过破碎槽的方式在处理槽内连续循环，从而在这种循环过程中进行破碎。 由于轴流式泵构件设置在破碎槽的下部，所以倾斜壳体中的材料被轴向向下引导，当倾斜叶片旋转时产生轴向流动。 泵送效果由轴流提供。 被粉碎的材料被吸入到倾斜壳体的侧面，然后向下发射。 当轴向流动促进构件设置在破碎槽的下部时，可以加强倾斜壳体内的吸力。 倾斜壳体内的材料通过位于倾斜壳体的向下开口部分处的涡轮叶片的旋转而被主动排出。

公开(公告)号：US5257092A

公开(公告)日：1993-10-26

申请号：US721694

申请日：1991-06-26

申请人： Masato Noguchi ,  Tsuyoshi Ishikawa

发明人： Masato Noguchi ,  Tsuyoshi Ishikawa

IPC分类号： G01J4/00 ,  G01N21/23 ,  G01N21/95

CPC分类号： G01N21/23 ,  G01J4/00 ,  G01N2021/1772 ,  G01N2021/9511

摘要： A polarization and birefringence measuring device has an optical source which causes a wide polarized light beam to impinge on a specimen. A photodetecting sensor having picture elements in two dimensions detects a light beam containing information about the specimen. A analyzer is situated in front of the photodetecting sensor and rotated to vary the amount of light which is transmitted. A frame memory memorizes the intensity of each picture element in the photodetecting sensor, and a computer determines the polarization state of parts of the specimen coresponding to the intensity of each picture element sampled. The computer samples the output of the photodetecting sensor when the rotation angle of the analyzer has reached a specified value, and this is memorized by the frame memory. As it may be assumed that the intensity variation of the light beam produced by the rotation of the analyzer is sinusoidal, its polarization state for each picture element can be found by performing no less than three measurements.

摘要翻译： 偏振和双折射测量装置具有引起宽偏振光束撞击样本的光源。 具有二维图像元素的光电检测传感器检测包含关于样本的信息的光束。 分析仪位于光电检测传感器的前面并旋转以改变传输的光量。 帧存储器存储光电检测传感器中的每个像素的强度，并且计算机确定对应于每个被采样的像素的强度的样本的部分的偏振状态。 当分析仪的旋转角度达到指定值时，计算机对光电检测传感器的输出进行采样，并由帧存储器存储。 由于可以假设由分析仪的旋转产生的光束的强度变化是正弦的，所以通过执行不少于三次的测量，可以发现每个像素的偏振状态。

公开(公告)号：US09136372B2

公开(公告)日：2015-09-15

申请号：US13531793

申请日：2012-06-25

申请人： Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7825 ,  H01L29/7827

摘要： In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls.

摘要翻译： 在碳化硅半导体器件中，多个沟槽在一个方向上具有纵向方向并且被布置成条纹图案。 每个沟槽具有在纵向方向上延伸的第一和第二侧壁。 第一侧壁与（11-20）面和（1-100）面中的一个成锐角，第二侧壁与（11-20）面和 （1-100）平面，第一锐角小于第二锐角。 第一导电类型区域仅与每个沟槽的第一和第二侧壁中的第一侧壁接触，并且仅在第一和第二侧壁中的第一侧壁上形成电流路径。

公开(公告)号：US08949934B2

公开(公告)日：2015-02-03

申请号：US13456488

申请日：2012-04-26

申请人： Qihong Wang ,  Akihiro Komori ,  Tomohisa Tanaka ,  Tsuyoshi Ishikawa

发明人： Qihong Wang ,  Akihiro Komori ,  Tomohisa Tanaka ,  Tsuyoshi Ishikawa

IPC分类号： G06F7/04 ,  G06F17/30 ,  H04L9/32 ,  G06F21/36 ,  H04W12/06

CPC分类号： H04L9/3215 ,  G06F21/36 ,  H04W12/06

摘要： There is provided a communication device including a determination unit for determining whether authentication information presented to a user of another communication device is consistent with comparison information transmitted from the other communication device capable of obtaining and transmitting the authentication information, and an authentication unit, when it is determined that the authentication information is consistent with the comparison information, for authenticating the other communication device as an opposite communication party.

摘要翻译： 提供了一种通信设备，包括：确定单元，用于确定呈现给另一通信设备的用户的认证信息是否与能够获得和发送认证信息的另一通信设备发送的比较信息一致;以及认证单元，当 确定认证信息与比较信息一致，用于认证另一通信设备作为相对的通信方。

公开(公告)号：US20140252465A1

公开(公告)日：2014-09-11

申请号：US14352142

申请日：2012-10-17

申请人： Hidefumi Takaya ,  Hideo Matsuki ,  Naohiro Suzuki ,  Tsuyoshi Ishikawa ,  Narumasa Soejima ,  Yukihiko Watanabe

发明人： Hidefumi Takaya ,  Hideo Matsuki ,  Naohiro Suzuki ,  Tsuyoshi Ishikawa ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/423 ,  H01L29/66 ,  H01L21/28 ,  H01L29/78

CPC分类号： H01L29/4236 ,  H01L21/047 ,  H01L21/28008 ,  H01L21/823487 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/41741 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66666 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/7827

摘要： A semiconductor device has a semiconductor substrate including a body region, a drift region, a trench that extends from a surface of the semiconductor substrate into the drift region through the body region, and a source region located adjacent to the trench in a range exposed to the surface of the semiconductor substrate, the source region being isolated from the drift region by the body region. A specific layer is disposed on a bottom of the trench, and it has a characteristic of forming a depletion layer at a junction between the specific layer and the drift region. An insulating layer covers an upper surface of the specific layer and a sidewall of the trench. A conductive portion is formed on a part of the side wall of the trench. The conductive portion is joined to the specific layer, and reaches the surface of the semiconductor substrate.

摘要翻译： 半导体器件具有半导体衬底，其包括体区，漂移区，从半导体衬底的表面延伸通过体区的漂移区的沟槽，以及与暴露于 半导体衬底的表面，源区域通过身体区域与漂移区隔离。 特定层设置在沟槽的底部，并且具有在特定层和漂移区之间的结处形成耗尽层的特征。 绝缘层覆盖特定层的上表面和沟槽的侧壁。 导电部分形成在沟槽的侧壁的一部分上。 导电部分连接到特定层，并到达半导体衬底的表面。

公开(公告)号：US20140175459A1

公开(公告)日：2014-06-26

申请号：US13994855

申请日：2012-02-06

申请人： Kensaku Yamamoto ,  Masato Noborio ,  Hideo Matsuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Kensaku Yamamoto ,  Masato Noborio ,  Hideo Matsuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/7397

摘要： A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a gate electrode on a gate insulating film in the trench; a source electrode electrically coupled with the source region and the base region; a drain electrode on a back side of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has upper and lower portions. A width of the upper portion is smaller than the lower portion.

摘要翻译： SiC半导体器件包括：半导体开关元件，其具有：依次层叠的基板，漂移层和基极区域; 源极区域和基极区域中的接触区域; 从源极区域的表面延伸以穿透基部区域的沟槽; 沟槽中的栅极绝缘膜上的栅电极; 源极，与源极区域和基极区域电耦合; 位于所述基板的背面的漏电极; 以及在漂移层的上部比沟槽更深的多个深层。 每个深层具有上部和下部。 上部的宽度小于下部。

公开(公告)号：US20130075760A1

公开(公告)日：2013-03-28

申请号：US13703284

申请日：2011-06-02

申请人： Hidefumi Takaya ,  Hideo Matsuki ,  Naohiro Suzuki ,  Tsuyoshi Ishikawa

发明人： Hidefumi Takaya ,  Hideo Matsuki ,  Naohiro Suzuki ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/16 ,  H01L29/49

CPC分类号： H01L29/1608 ,  H01L21/046 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/49 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

摘要： The present application relates to technology for improving a withstand voltage of a semiconductor device. The semiconductor device includes a termination area that surrounds a cell area. The cell area is provided with a plurality of main trenches. The termination area is provided with one or more termination trenches surrounding the cell area. A termination trench is disposed at an innermost circumference of one or more termination trenches. A body region is disposed on a surface of a drift region. Each main trench reaches the drift region. A gate electrode is provided within each main trench. The termination trench reaches the drift region. Sidewalls and a bottom surface of the termination trench are covered with a insulating layer. A surface of the insulating layer covering the bottom surface of the termination trench is covered with a buried electrode. A gate potential is applied to the buried electrode.

摘要翻译： 本申请涉及用于提高半导体器件耐受电压的技术。 半导体器件包括围绕单元区域的终止区域。 单元区域设置有多个主沟槽。 终端区域设置有围绕单元区域的一个或多个终止沟槽。 终端沟槽设置在一个或多个端接沟槽的最内圆周处。 体区域设置在漂移区域的表面上。 每个主沟槽到达漂移区域。 在每个主沟槽内设置栅电极。 端接沟槽到达漂移区域。 侧壁和终端沟槽的底表面被绝缘层覆盖。 覆盖终端沟槽的底面的绝缘层的表面被掩埋电极覆盖。 将栅极电位施加到掩埋电极。

公开(公告)号：US08297824B2

公开(公告)日：2012-10-30

申请号：US12629246

申请日：2009-12-02

申请人： Toshihisa Saito ,  Masaru Furujiku ,  Tsuyoshi Ishikawa ,  Eizaburo Higuchi

发明人： Toshihisa Saito ,  Masaru Furujiku ,  Tsuyoshi Ishikawa ,  Eizaburo Higuchi

IPC分类号： F21V7/04

CPC分类号： G02B6/0018 ,  G02B6/0016 ,  G02B6/0041

摘要： To solve an uneven light quantity caused in a case where a light guide plate, in which light from a spot light source such as an LED enters an surface, changes by 90 degrees and exits the light to the outside, is used as a backlight. The light guide plate of the invention includes a light flux unifying region. The light flux unifying region has an incident surface, a first surface, and an exit surface. Light fluxes emitted from a light source enter the incident surface. The first surface is almost perpendicular to the incident surface and the intensity distribution of the light fluxes having entered is unified at the first surface. The exit surface is disposed almost parallel with the incident surface and the unified light fluxes exit from the exit surface. A boundary line between the incident surface and the first surface has a zigzag surface.

摘要翻译： 为了解决在来自诸如LED的点光源的光进入表面的光的导光板变为90度并且将光离开到外部的情况下引起的不均匀的光量被用作背光。 本发明的导光板包括光通量区域。 光通量区域具有入射表面，第一表面和出射表面。 从光源发射的光通量进入入射面。 第一表面几乎垂直于入射表面，并且已经进入的光束的强度分布在第一表面是统一的。 出射面几乎与入射面平行，并且统一的光束从出射面出射。 入射表面和第一表面之间的边界线具有锯齿形表面。

公开(公告)号：US07883041B2

公开(公告)日：2011-02-08

申请号：US12384025

申请日：2009-03-31

申请人： Tsuyoshi Ishikawa

发明人： Tsuyoshi Ishikawa

IPC分类号： B02C17/18

CPC分类号： B02C17/161 ,  B02C17/163 ,  B02C17/168 ,  B02C17/1815

摘要： Disclosed is a media mixing mill, which is capable of obtaining a high-quality product while ensuring adequate pulverization/dispersion functions. The media mixing mill of the present invention includes a grinding container having a material inlet and a spherical-shaped grinding chamber, an agitating member rotatably installed inside the grinding chamber and in adjacent relation to an inner wall of the grinding container, grinding media contained in the grinding chamber, and a centrifugal-type media-separating member rotatably disposed inside the grinding chamber and in opposed relation to the agitating member.

摘要翻译： 公开了一种能够在确保足够的粉碎/分散功能的同时获得高质量产品的介质混合机。 本发明的介质混合机包括具有材料入口和球形研磨室的研磨容器，可旋转地安装在研磨室内并且与研磨容器的内壁相邻的搅拌构件， 研磨室和可旋转地设置在研磨室内并与搅拌构件相对的离心式介质分离构件。

公开(公告)号：US07441520B2

公开(公告)日：2008-10-28

申请号：US11442047

申请日：2006-05-26

申请人： Tsuyoshi Ishikawa ,  Kengo Kubo

发明人： Tsuyoshi Ishikawa ,  Kengo Kubo

IPC分类号： F01L1/34

CPC分类号： F02D13/02 ,  Y02T10/18

摘要： A valve-timing control apparatus of an internal combustion engine provides a valve timing controller capable of continuously and variably controlling the overlap period of an intake valve and an exhaust valve of an internal combustion engine. A driving-state determination mechanism determines the driving state of the internal combustion engine and an overlap-period setting apparatus sets the overlap period with the valve timing controller. The overlap-period is set during the start of the internal combustion engine on the basis of the determinations of the driving-state determination mechanism which vary as the internal combustion engine starts.

摘要翻译： 内燃机的气门正时控制装置提供能够连续且可变地控制内燃机的进气门和排气门的重叠期间的气门正时控制装置。 驱动状态确定机构确定内燃机的驱动状态，并且重叠时段设定装置与气门正时控制器设定重叠期间。 基于内燃机起动时的驱动状态判定机构的判定，在内燃机起动期间设定重叠期间。