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59 条记录 (耗时 0.024 秒)

    Process for producing single-crystal bulk zinc selenide
    42.
    发明授权
    Process for producing single-crystal bulk zinc selenide 失效
    单晶体积硒化锌的制备方法

    公开(公告)号：US5554219A

    公开(公告)日：1996-09-10

    申请号：US376896

    申请日：1995-01-23

    申请人： Tsuguo Fukuda ,  Peter Rudolph ,  Kazuyuki Umezu

    发明人： Tsuguo Fukuda ,  Peter Rudolph ,  Kazuyuki Umezu

    IPC分类号： C30B11/00 ,  C30B11/14 ,  C30B29/48

    CPC分类号： C30B11/14 ,  C30B11/00 ,  C30B29/48

    摘要： When producing a single-crystal bulk ZnSe from a melt by a high-pressure melt technique in a vertical Bridgman (VB) furnace or a vertical gradient freezing (VGF) furnace, preliminarily grown polycrystalline ZnSe (which may be a crystal solely composed of twins) is used as a seed and, after melting the starting ZnSe material and part of the seed, a twin-free ZnSe bulk crystal is grown on the seed; alternatively, polycrystalline ZnSe is grown at the tip of the growing crystal and part of it is melted, followed by growing a single crystal on that polycrystal to produce a twin-free, high-purity ZnSe bulk crystal. In either way, the process assures that twin-free single crystals of bulk ZnSe can be produced with good reproducibility without adding dopants or using any materials that are difficult to obtain.

    摘要翻译： 在垂直布里奇曼（VB）炉或垂直梯度冷冻（VGF）炉中通过高压熔融技术从熔体中生产单晶体ZnSe，预生长的多晶ZnSe（其可以是仅由双胞胎组成的晶体 ）用作种子，并且在熔化起始的ZnSe材料和部分种子之后，在种子上生长一个双自由的ZnSe本体晶体; 或者，多晶ZnSe在生长晶体的尖端生长，并且其一部分被熔化，随后在该多晶体上生长单晶以产生双自由的高纯度ZnSe块状晶体。 以任一方式，该方法确保可以在不添加掺杂剂或使用难以获得的任何材料的情况下以良好的再现性制备体积ZnSe的双体单晶。

    Process for producing optoelectric articles
    43.
    发明授权
    Process for producing optoelectric articles 失效
    光电制品生产工艺

    公开(公告)号：US5517942A

    公开(公告)日：1996-05-21

    申请号：US408390

    申请日：1995-03-22

    申请人： Tsuguo Fukuda ,  Yasunori Okano ,  Tatsuo Kawaguchi ,  Minoru Imaeda

    发明人： Tsuguo Fukuda ,  Yasunori Okano ,  Tatsuo Kawaguchi ,  Minoru Imaeda

    IPC分类号： G02F1/03 ,  C30B19/00 ,  C30B19/02 ,  C30B29/30 ,  G02B6/132 ,  C30B19/12

    CPC分类号： G02B6/132 ,  C30B19/02 ,  C30B29/30

    摘要： A process for producing optoelectric articles, in which an optoelectric single crystal film is formed on an optoelectric single crystal substrate, is disclosed. The optoelectric single crystal substrate is exposed to a liquid phase in a supercooling state of a melt including a solute and a melting medium, and the optoelectric single crystal film is formed by a liquid phase epitaxial process. In this case, a viscosity of the liquid phase is set to 75%.about.95% preferably 75%.about.90% with respect to a viscosity at which a degree of supercooling of the liquid phase is zero.

    摘要翻译： 公开了一种在光电单晶衬底上形成光电单晶膜的光电器件的制造方法。 将光电单晶基板暴露于包含溶质和熔融介质的熔融物的过冷状态的液相，通过液相外延工艺形成光电单晶膜。 在这种情况下，相对于液相的过冷度为零的粘度，液相的粘度被设定为75％差异95％，优选75％差异90％。

    WIRELESS MEASURING APPARATUS AND WIRELESS TEMPERATURE MEASUREMENT SYSTEM
    46.
    发明申请
    WIRELESS MEASURING APPARATUS AND WIRELESS TEMPERATURE MEASUREMENT SYSTEM 审中-公开
    无线测量设备和无线温度测量系统

    公开(公告)号：US20130003779A1

    公开(公告)日：2013-01-03

    申请号：US13518194

    申请日：2010-12-24

    申请人： Tsuguo Fukuda ,  Mitsuru Sato ,  Junichi Kojima ,  Yukinaga Koike

    发明人： Tsuguo Fukuda ,  Mitsuru Sato ,  Junichi Kojima ,  Yukinaga Koike

    IPC分类号： G01K11/22 ,  G01H13/00

    CPC分类号： G01K7/32 ,  G01K1/024

    摘要： There is provided a wireless measuring apparatus that efficiently measures the frequency characteristics of a sensor unit mounted on an object to be measured. The wireless measuring apparatus is a wireless measuring apparatus that measures the frequency characteristics of a sensor unit (10) mounted on an object (40) to be measured, including the sensor unit (10) having a piezo-resonator (11), an antenna (20) that forms a circuitry with the sensor unit (10), and a measuring element (30) that supplies high frequency electricity changed in different frequency to the circuitry and measures the frequency characteristics of the reflected electricity strength received from the circuitry.

    摘要翻译： 提供了一种无线测量装置，其有效地测量安装在被测量物体上的传感器单元的频率特性。 无线测量装置是测量安装在待测物体（40）上的传感器单元（10）的频率特性的无线测量装置，包括具有压电谐振器（11）的传感器单元（10），天线 （20），其形成具有所述传感器单元（10）的电路;以及测量元件（30），其向所述电路提供以不同频率改变的高频电力并测量从所述电路接收的反射电力的频率特性。

    Method for producing fluoride crystal
    47.
    发明授权
    Method for producing fluoride crystal 失效
    生产氟化物晶体的方法

    公开(公告)号：US08333838B2

    公开(公告)日：2012-12-18

    申请号：US12805786

    申请日：2010-08-19

    申请人： Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga

    发明人： Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga

    IPC分类号： C30B15/08

    CPC分类号： C30B15/08 ,  C01B9/08 ,  C30B29/12 ,  Y10T117/10

    摘要： Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises a chamber, a window material, and the like, and is modified such that it can evacuate air from the chamber to provide a high degree vacuum there. The apparatus further includes a crucible, which has a perforation at its bottom. The capillary portion of the perforation is adjusted to facilitate the contact of a seed crystal with a melt. By using the apparatus it is possible to stably produce high quality single crystals of fluorides in a short period of time.

    摘要翻译： 提供了能够在非常短的时间内产生氟化物晶体的装置，以及适用于使用该装置生产氟化物晶体的方法。 该设备包括一个室，一个窗户材料等，并且被改造成使得它可以从室中排出空气以在那里提供高度的真空度。 该装置还包括坩埚，其底部具有穿孔。 调整穿孔的毛细管部分以促进晶种与熔体的接触。 通过使用该装置，可以在短时间内稳定地生产高质量的氟化物单晶。

    Pulling-down apparatus and container therefor
    49.
    发明授权
    Pulling-down apparatus and container therefor 失效
    下拉装置和容器

    公开(公告)号：US07323053B2

    公开(公告)日：2008-01-29

    申请号：US11336840

    申请日：2006-01-23

    申请人： Kazushige Tohta ,  Kou Onodera ,  Takeshi Ito ,  Tsuguo Fukuda ,  Akira Yoshikawa

    发明人： Kazushige Tohta ,  Kou Onodera ,  Takeshi Ito ,  Tsuguo Fukuda ,  Akira Yoshikawa

    IPC分类号： C30B35/00

    CPC分类号： C30B15/08 ,  Y10S117/902 ,  Y10T117/1012 ,  Y10T117/1064 ,  Y10T117/1072

    摘要： It is an object of the present invention to provide a pulling-down apparatus that can breed a crystal having good characteristics of scintillation. The apparatus retains in a container that can control an atmosphere a melting pot having a narrow hole at the bottom side thereof, an induction heating device, and a seed-holding device that holds a seed and is pulled down so that a crystal formed successively to the seed is pulled down. Concurrently, imaging devices are arranged that can pick up images of a solid-liquid interface between the crystal and a melt material, from different directions, and the seed-holding device can be travel along directions perpendicular to respective image pickup directions in a horizontal plane.

    摘要翻译： 本发明的目的是提供一种可以培养具有良好闪烁特性的晶体的下拉装置。 该装置保持在容器中，该容器能够控制其底侧具有窄孔的熔池，感应加热装置和保持种子并被拉下的种子保持装置，使得晶体依次形成为 种子被拉下来。 同时，成像装置被布置成可以从不同的方向拾取晶体和熔体材料之间的固液界面的图像，并且种子保持装置可以沿着垂直于水平面中的各个图像拾取方向的方向行进 。

    Self-Coated Single Crystal, And Production Apparatus And Process Therefor
    50.
    发明申请
    Self-Coated Single Crystal, And Production Apparatus And Process Therefor 审中-公开
    自涂单晶及其生产设备及其工艺

    公开(公告)号：US20080008438A1

    公开(公告)日：2008-01-10

    申请号：US11547779

    申请日：2005-04-11

    申请人： Tsuguo Fukuda ,  Akira Yoshikawa ,  Yuji Kagamitani

    发明人： Tsuguo Fukuda ,  Akira Yoshikawa ,  Yuji Kagamitani

    IPC分类号： G02B6/00 ,  C30B15/08 ,  C30B15/10

    CPC分类号： C30B29/62 ,  C30B15/08 ,  C30B29/12 ,  C30B29/20 ,  C30B29/28 ,  C30B29/30 ,  C30B29/34 ,  Y10T117/1032

    摘要： It is an object of the present invention to provide a self-coated single crystal that without any special step conducted after crystal growth, has its circumference coated with a layer of different properties. A self-coated single crystal according to the present invention is characterized in that in operations comprising melting crystal materials for a core and a clad in a single crucible and carrying out growth of a single crystal through a pulling up method or a pulling down method, a grown single crystal in an as-growth condition has its circumference self-coated with a clad whose refractive index is lower than that of the core.

    摘要翻译： 本发明的目的是提供一种自体涂覆的单晶，其在晶体生长后不进行任何特殊步骤，其周长涂覆有不同性质的层。 根据本发明的自包覆单晶的特征在​​于，在包括将单个坩埚中的芯和包层的晶体材料熔融并通过拉拔法或拉拔法进行单晶的生长的操作中， 在生长条件下生长的单晶的周长自身涂覆有折射率低于芯的包层。