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    METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR, CRYSTAL GROWTH RATE INCREASING AGENT, SINGLE CRYSTAL NITRIDE, WAFER AND DEVICE
    3.
    发明申请
    METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR, CRYSTAL GROWTH RATE INCREASING AGENT, SINGLE CRYSTAL NITRIDE, WAFER AND DEVICE 审中-公开
    生产氮化物半导体的方法，晶体生长速率增加剂，单晶氮化物，晶体和器件

    公开(公告)号：US20100104495A1

    公开(公告)日：2010-04-29

    申请号：US12444847

    申请日：2007-10-10

    申请人： Shinichiro Kawabata ,  Hirohisa Itoh ,  Dirk Ehrentraut ,  Yuji Kagamitani ,  Akira Yoshikawa ,  Tsuguo Fukuda

    发明人： Shinichiro Kawabata ,  Hirohisa Itoh ,  Dirk Ehrentraut ,  Yuji Kagamitani ,  Akira Yoshikawa ,  Tsuguo Fukuda

    IPC分类号： C30B9/00 ,  C01F11/20 ,  C01B21/06

    CPC分类号： C30B29/403 ,  C30B7/10 ,  C30B29/406

    摘要： A method for producing a nitride semiconductor, comprising controlling temperature and pressure in a autoclave containing a seed having a hexagonal crystal structure, a nitrogen element-containing solvent, a raw material substance containing a metal element of Group 13 of the Periodic Table, and a mineralizer so as to put said solvent into a supercritical state and/or a subcritical state and thereby ammonothermally grow a nitride semiconductor crystal on the surface of said seed, wherein the crystal growth rate in the m-axis direction on said seed is 1.5 times or more the crystal growth rate in the c-axis direction on said seed. By the method, a nitride semiconductor having a large-diameter C plane or a nitride semiconductor thick in the m-axis direction can be efficiently and simply produced.

    摘要翻译： 一种氮化物半导体的制造方法，包括控制含有六方晶系结晶种子的高压釜中的温度和压力，含氮元素的溶剂，含有元素周期表第13族金属元素的原料物质，以及 使所述溶剂处于超临界状态和/或亚临界状态，从而在所述种子的表面上氨氮化物半导体晶体生长，其中所述种子上的m轴方向的晶体生长速率为1.5倍或 更多的是在所述种子上的c轴方向上的晶体生长速率。 通过该方法，可以有效且简单地制造具有大直径C面的氮化物半导体或在m轴方向上厚的氮化物半导体。

    Method of manufacturing oxide single crystal
    5.
    发明授权
    Method of manufacturing oxide single crystal 失效
    氧化物单晶的制造方法

    公开(公告)号：US5900054A

    公开(公告)日：1999-05-04

    申请号：US938265

    申请日：1997-09-26

    申请人： Hiroshi Takagi ,  Makoto Kumatoriya ,  Tsuguo Fukuda

    发明人： Hiroshi Takagi ,  Makoto Kumatoriya ,  Tsuguo Fukuda

    IPC分类号： C30B15/00 ,  C30B29/32 ,  H01L21/208 ,  C30B15/02

    CPC分类号： C30B15/00 ,  C30B29/32

    摘要： Provided is an oxide single crystal of large size having the crystal structure of Ca.sub.3 Ga.sub.2 Ge.sub.4 O.sub.14 and containing Ge as a constituent element and a method of manufacturing thereof. The oxide single crystal is obtained by a manufacturing method comprising the steps of preparing a melt of starting materials containing GeO.sub.2 and growing said oxide crystal from said melt of starting materials in single-crystal growing atmosphere, which is characterized in that said starting materials contain GeO.sub.2 in a stoichiometrically excess amount, and/or said single-crystal growing atmosphere is a gas having an oxygen partial pressure greater than about 2.times.10.sup.-1 atm.

    摘要翻译： 提供具有Ca 3 Ga 2 Ge 4 O 14的晶体结构并且含有Ge作为构成元素的大尺寸的氧化物单晶及其制造方法。 氧化物单晶通过包括以下步骤的制造方法获得：制备包含GeO 2的起始材料的熔体并在所述单晶生长气氛中从所述原料熔体生长所述氧化物晶体，其特征在于，所述原料含有GeO 2 和/或所述单晶生长气氛是具有大于约2×10 -1 atm的氧分压的气体。

    Method for producing GaAs single crystal
    6.
    发明授权
    Method for producing GaAs single crystal 失效
    制造GaAs单晶的方法

    公开(公告)号：US4637854A

    公开(公告)日：1987-01-20

    申请号：US571091

    申请日：1984-01-16

    申请人： Tsuguo Fukuda ,  Kazutaka Terashima

    发明人： Tsuguo Fukuda ,  Kazutaka Terashima

    IPC分类号： C30B15/30 ,  C30B15/22 ,  C30B27/02

    CPC分类号： C30B15/305 ,  Y10S117/917

    摘要： A method for the production of a gallium arsenide single crystal which comprises bringing a seed crystal into contact with a fused layer of raw materials for the crystal while applying to the fused layer a magnetic field which has intensity enabling the temperature fluctuation in the neighborhood of the solid-liquid boundary in the fused layer to be repressed to within 1.degree. C., thereby effecting crystal growth.

    摘要翻译： 一种砷化镓单晶的制造方法，其特征在于，使晶种与熔融原料的熔融层接触，同时向所述熔融层施加能够使所述晶体的附近的温度波动强度的磁场 将熔融层中的固 - 液界面压抑至1℃，从而进行晶体生长。

    Method for manufacture of III-V group compound semiconductor single crystal
    7.
    发明授权
    Method for manufacture of III-V group compound semiconductor single crystal 失效
    III-V族化合物半导体单晶的制造方法

    公开(公告)号：US4586979A

    公开(公告)日：1986-05-06

    申请号：US596705

    申请日：1984-04-04

    申请人： Tooru Katsumata ,  Kazutaka Terashima ,  Hiroaki Nakajima ,  Tsuguo Fukuda

    发明人： Tooru Katsumata ,  Kazutaka Terashima ,  Hiroaki Nakajima ,  Tsuguo Fukuda

    IPC分类号： C30B15/20 ,  C30B15/28 ,  C30B27/02

    CPC分类号： C30B15/20 ,  C30B15/28

    摘要： A III-V group compound semiconductor single crystal is manufactured by a method which comprises adjusting the temperature of a fused layer of raw material for the crystal, based on the electric current signal flowing between a seed crystal and the fused layer of raw material for the crystal, the weight signal of the crystal, and the length signal of the crystal, to levels optimum for the growth of crystal during the contact of the seed crystal with the fused layer, during the formation of the shoulder part of the crystal, and during the formation of the barrel part of the crystal, respectively in the process of crystal growth.

    摘要翻译： 通过以下方法制造III-V族化合物半导体单晶，该方法包括基于在晶种和用于晶体的原料的熔融层之间流动的电流信号来调节用于晶体的原料的熔融层的温度 晶体的重量信号和晶体的长度信号，在晶体与熔融层的接触期间在晶体的肩部部分的形成期间以及在晶体的肩部部分期间 晶体形成的桶体分别在晶体生长过程中。

    Method for manufacturing gallium phosphide single crystals
    8.
    发明授权
    Method for manufacturing gallium phosphide single crystals 失效
    制造磷化镓单晶的方法

    公开(公告)号：US4431476A

    公开(公告)日：1984-02-14

    申请号：US336701

    申请日：1982-01-04

    申请人： Masayuki Watanabe ,  Jisaburo Ushizawa ,  Tsuguo Fukuda

    发明人： Masayuki Watanabe ,  Jisaburo Ushizawa ,  Tsuguo Fukuda

    IPC分类号： C01B25/08 ,  C30B27/02

    CPC分类号： C01B25/087 ,  C30B27/02 ,  C30B29/40

    摘要： A gallium phosphide single crystal is prepared from a polycrystalline gallium phosphide powder as a starting raw material which is obtained by hydrogen reduction of gallium phosphate and which contains residual phosphate radicals in an amount of 0.03 to 0.5% by weight. The gallium phosphide powder is compressed to prepare a green compact which is then melted to provide a gallium phosphide liquid. The gallium phosphide liquid is brought into contact with a seed crystal and is pulled.

    摘要翻译： 从作为原料的多晶磷化镓粉末制备磷化镓单晶，其通过氢氧化还原磷酸镓而得到，并含有0.03〜0.5重量％的残留磷酸根。 将磷化镓粉末压缩以制备生坯，然后将其熔化以提供磷化镓液体。 使磷化镓液体与晶种接触并被拉动。