摘要:
A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
摘要:
A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
摘要:
After a molten metal of aluminum or an aluminum alloy having a temperature, which is higher than the liquidus line temperature of aluminum or the aluminum alloy by 5 to 200° C., is injected into a mold, when the mold is cooled to solidify the molten metal, the molten metal injected into the mold is pressurized at a pressure of 1.0 to 100 kPa from a high-temperature side to a low-temperature side, and the mean cooling rate is set to be 5 to 100° C./minute while the mold is cooled from the liquidus line temperature to 450° C., the temperature gradient formed in the mold being set to be in the range of from 1° C./cm to 50° C./cm.
摘要:
A refrigerating machine comprising a compressor, a radiator, a pressure-reducing device, a gas-liquid separator, plural heat absorbers functioning selectively in different temperature zones, a unit for allowing introduction of gas refrigerant separated in the gas-liquid separator into an intermediate pressure portion of the compressor, and a low pressure side circuit in which liquid refrigerant separated in the gas-liquid separator is circulated, wherein the low pressure side circuit is provided with at least a heat absorber functioning in a low temperature zone.
摘要:
A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
摘要:
There is provided a magnetic head formed with a pair of magnetic core halves fitted to abut on each other having a nonmagnetic gap therebetween and having a slide contact plane for slide contact with a magnetic recording medium on which an end face of the nonmagnetic gap and the magnetic core halves. In the magnetic head, a nonmagnetic portion formed by filling a glass material is provided at an end portion of the slide contact plane outer than the end face of the magnetic core halves on the slide contact plane. The inventive magnetic head realizes less volume of magnetic body while solving problems in mechanical strength of the magnetic head or in compatibility to a conventional head. Accordingly, a magnetic head with excellent head performance without decreasing productivity can be obtained.
摘要:
The invention provides a process for producing a coated Cu alloy having a surface which has a low coefficient of friction and a high resistance to abrasion and is suitable for fabricating connectors, charging-sockets of electric automobiles etc. The coated Cu alloy is produced by coating the surface of a copper alloy with Sn and heat treating the coated Cu alloy at a temperature in the range of 100-450° C. for 0.5-24 hours. The Cu alloy which is coated with Sn consists of 1-41 wt % Zn with the balance being Cu and incidental impurities. By using the coated Cu alloy, the force of insertion, resistance to abrasion and resistance to corrosion of connectors can be significantly improved.
摘要:
A leadframe of a single frame structure for supporting leads on IC chips. The leadframe is made of a high-strength, high-electroconductivity copper alloy. The copper alloy is produced by preparing an ingot of a copper alloy of 0.05-0.40 wt. % Fe, 0.05-0.40 wt. % Ni, 0.01-0.30 wt. % P, and optionally a total of 0.03-0.50 wt. % of either Sn or Zn or both and a total of 0.05-0.50 wt. % of at least one element of Ag, Co, B, Mn, Cr, Si, Ti and Zr, with the balance being Cu and incidental impurities, heating the ingot to 800 to 950.degree. C. and hot working the ingot to a reduction ratio of 50% or more, quenching the hot worked material from 600.degree. C. or above down to 300.degree. C. or below at a cooling rate of at least 1.degree. C./seconds, heat treating the quenched material at 380 to 520.degree. C. for 60-600 minutes without cold working, and subsequently carrying out cold working and heat treating at 450.degree. C. or below, whereby an Fe--Ni--P system intermetallic compound is precipitated in the Cu matrix as uniform and fine grains not larger than 50 nm.
摘要:
High-strength, high-electroconductivity copper alloys are produced by preparing an ingot of a copper alloy containing 0.05-0.40 wt % Fe, 0.05-0.40 wt % Ni, 0.01-0.30 wt % P, and optionally a total of 0.03-0.50 wt % of either Sn or Zn or both and a total of 0.05-0.50 wt % of at least one element of Ag, B, Mn, Cr, Si, Ti or Zr, with the balance being Cu and incidental impurities, heating the ingot to 800.degree. to 950.degree. C. and hot working it by a reduction ratio of 50% or more, quenching the hot worked material from 600.degree. C. or above to 300.degree. C. or below at a cooling rate of at least 1.degree. C./sec, heat treating the quenched material at 380.degree. to 520.degree. C. for 60 to 600 minutes without performing cold working, and cold working and heat treating it at 450.degree. C. or below, to precipitate an Fe--Ni--P system intermetallic compound in the Cu matrix as uniform and fine grains not larger than 50 nanometers. The copper alloys thus produced are superior in hardness, tensile strength, electrical conductivity and amenability to bending. The copper alloys are useful for making electric and electronic components, such as leadframes.