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140 条记录 (耗时 0.026 秒)

    Process for fabricating a semiconductor device having a high reliability dielectric material
    42.
    发明授权
    Process for fabricating a semiconductor device having a high reliability dielectric material 失效
    制造具有高可靠性电介质材料的半导体器件的工艺

    公开(公告)号：US5407870A

    公开(公告)日：1995-04-18

    申请号：US71885

    申请日：1993-06-07

    申请人： Yoshio Okada ,  Philip J. Tobin

    发明人： Yoshio Okada ,  Philip J. Tobin

    IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/51 ,  H01L21/285

    CPC分类号： H01L21/28273 ,  H01L21/28167 ,  H01L21/28176 ,  H01L29/511 ,  H01L29/66825

    摘要： A process for fabricating a high-reliability composite dielectric layer (19) includes the formation of a first oxynitride layer (14) on the surface (12) of a silicon substrate (10). The formation of the first oxynitride layer (14) is followed by an oxidation step to form a silicon dioxide layer (16) at the surface (12) of the substrate (10) and underlying the first oxynitride layer (14). The composite dielectric layer (19) is completed by exposing the substrate (10) to nitrous oxide, and diffusing a nitrogen bearing species through both the silicon dioxide layer (16) and the first oxynitride layer (14) to form a second oxynitride layer (18) underlying the silicon dioxide layer (16). The composite dielectric layer (19) exhibits a nitrogen-rich region at the interface between second oxynitride layer (18) and the silicon substrate (10). A second nitrogen rich region is also formed near the surface of the first oxynitride layer (14).

    摘要翻译： 制造高可靠性复合电介质层（19）的工艺包括在硅衬底（10）的表面（12）上形成第一氮氧化物层（14）。 第一氮氧化物层（14）的形成之后是氧化步骤，以在衬底（10）的表面（12）处形成二氧化硅层（16），并且位于第一氮氧化物层（14）下方。 通过将基板（10）暴露于一氧化二氮并通过二氧化硅层（16）和第一氮氧化物层（14）两者扩散含氮物质来形成复合介电层（19），以形成第二氮氧化物层 18）位于二氧化硅层（16）下面。 复合电介质层（19）在第二氧氮化物层（18）和硅衬底（10）之间的界面处显示富氮区域。 在第一氮氧化物层（14）的表面附近还形成有第二富氮区域。

    Input protection circuit for semiconductor integrated circuit device
    44.
    发明授权
    Input protection circuit for semiconductor integrated circuit device 失效
    半导体集成电路器件的输入保护电路

    公开(公告)号：US4994874A

    公开(公告)日：1991-02-19

    申请号：US425950

    申请日：1989-10-24

    申请人： Mitsuru Shimizu ,  Yoshio Okada ,  Syuso Fujii ,  Shozo Saito

    发明人： Mitsuru Shimizu ,  Yoshio Okada ,  Syuso Fujii ,  Shozo Saito

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L23/60 ,  H01L27/02

    CPC分类号： H01L27/0259

    摘要： First to third N.sup.+ -type impurity regions are formed separately from one another by a preset distance in the surface area of a P-type semiconductor substrate or a P-well region formed in an N-type semiconductor substrate. The first impurity region is connected to a power source and the second impurity region is connected to a ground terminal. The third impurity region formed between the first and second impurity regions is connected to one end of an input protection resistor which is connected at the other end to a signal input pad. The first impurity region, the third impurity region and that portion of the P-type semiconductor substrate or P-well region which lies between the first and third impurity regions constitute a first bipolar transistor for input protection and the second impurity region, the third impurity region and that portion of the P-type semiconductor substrate or P-well region which lies between the second and third impurity regions constitute a second bipolar transistor for input protection. The resistor and the first and second bipolar transistors constitute an input protection circuit.

    摘要翻译： 在N型半导体衬底中形成的P型半导体衬底或P阱区域的表面区域中，第一至第三N +型杂质区彼此分开地预定距离地形成。 第一杂质区域连接到电源，第二杂质区域连接到接地端子。 形成在第一和第二杂质区域之间的第三杂质区域连接到另一端连接到信号输入焊盘的输入保护电阻器的一端。 位于第一和第三杂质区域之间的第一杂质区域，第三杂质区域和P型半导体衬底或P阱区域的部分构成用于输入保护的第一双极晶体管，第二杂质区域，第三杂质区域 位于第二和第三杂质区之间的P型半导体衬底或P阱区的部分构成用于输入保护的第二双极晶体管。 电阻器和第一和第二双极晶体管构成输入保护电路。

    Semiconductor memory having barrier transistors connected between sense and restore circuits
    45.
    发明授权
    Semiconductor memory having barrier transistors connected between sense and restore circuits 失效
    半导体存储器具有连接在感测和恢复电路之间的阻挡晶体管

    公开(公告)号：US4931992A

    公开(公告)日：1990-06-05

    申请号：US310020

    申请日：1989-02-09

    申请人： Masaki Ogihara ,  Yoshio Okada ,  Syuso Fujii

    发明人： Masaki Ogihara ,  Yoshio Okada ,  Syuso Fujii

    IPC分类号： G11C11/4094

    CPC分类号： G11C11/4094

    摘要： A semiconductor memory comprises a memory cell for storing data, a bit line pair for transfering the data, a sense amplifier for amplifying the data from the bit line pair, a restore circuit directly connected to the bit line pair for restoring the data in the semiconductor memory, and a pair of constant voltage barrier transistors connected between the restore circuit and the sense amplifier for increasing the speed of sensing.

    摘要翻译： 半导体存储器包括用于存储数据的存储单元，用于传送数据的位线对，用于放大来自位线对的数据的读出放大器，直接连接到位线对的恢复电路，用于恢复半导体中的数据 存储器和连接在恢复电路和读出放大器之间的一对恒定电压势垒晶体管，用于增加感测速度。

    Dynamic type memory device including a reference potential generating circuit arrangement
    46.
    发明授权
    Dynamic type memory device including a reference potential generating circuit arrangement 失效
    包括参考电位发生电路装置的动态型存储装置

    公开(公告)号：US4788668A

    公开(公告)日：1988-11-29

    申请号：US824647

    申请日：1986-01-31

    申请人： Yoshio Okada

    发明人： Yoshio Okada

    IPC分类号： G11C11/401 ,  G11C11/409 ,  G11C11/4099 ,  G11C7/00 ,  G11C11/24

    CPC分类号： G11C11/4099

    摘要： A dynamic type memory device includes a plurality of one-transistor/one-capacitor type memory cells which are arranged in a matrix, first bit lines connected to the memory cells, second bit lines, and first capacitors respectively connected to the second bit lines and having a capacitance equal to 1/2 of that of the memory cell capacitor. This memory device further has second capacitors respectively connected to the second bit lines and having a capacitance equal to 1/2 of that of the memory cell capacitor, first switching transistors connected respectively between a power source terminal and the first capacitors, and second switching transistors connected respectively between a ground terminal and the second capacitors.

    摘要翻译： 一种动态型存储器件包括以矩阵形式布置的多个单晶体管/一电容型存储单元，连接到存储单元的第一位线，第二位线和分别连接到第二位线的第一电容器和 具有等于​​存储单元电容器的电容的1/2的电容。 该存储器件还具有分别连接到第二位线并具有等于存储单元电容器的1/2的电容的第二电容器，分别连接在电源端子和第一电容器之间的第一开关晶体管和第二开关晶体管 分别连接在接地端子和第二电容器之间。

    Partially pressure-sensitive recording paper
    48.
    发明授权
    Partially pressure-sensitive recording paper 失效
    部分压敏记录纸

    公开(公告)号：US4640847A

    公开(公告)日：1987-02-03

    申请号：US690523

    申请日：1985-01-11

    申请人： Yoshio Okada ,  Yuriko Igarashi

    发明人： Yoshio Okada ,  Yuriko Igarashi

    IPC分类号： B42D15/04 ,  B01J13/18 ,  B41J31/00 ,  B41M5/132 ,  B41M5/165 ,  B42D15/00 ,  B41M5/16

    CPC分类号： B41M5/132

    摘要： Disclosed herein is a process for producing a partially pressure-sensitive recording paper comprising dispersing microcapsules containing a solution of color-former, into a thermally melting suspension medium selected from the group consisting of Japan tallow (haze wax), Carnauba wax, Montan wax, paraffin wax, microcrystalline wax, polyethylene wax, oxidized wax and the mixtures thereof, thereby obtaining an ink comprising the microcapsules and the thermally melting suspension medium, and painting the thus obtained ink on a specified part of a surface of a sheet of paper.

    摘要翻译： 本文公开了一种制备部分压敏记录纸的方法，包括将含有成色剂溶液的微胶囊分散到选自日本牛油（霾蜡），巴西棕榈蜡，蒙山蜡， 石蜡，微晶蜡，聚乙烯蜡，氧化蜡及其混合物，从而获得包含微胶囊和热熔悬浮介质的油墨，并将如此获得的油墨喷涂在一张纸的表面的特定部分上。

    Partially pressure-sensitized recording paper and process for preparing the same
    49.
    发明授权
    Partially pressure-sensitized recording paper and process for preparing the same 失效
    部分压敏感记录纸及其制备方法

    公开(公告)号：US4597993A

    公开(公告)日：1986-07-01

    申请号：US661157

    申请日：1984-10-15

    申请人： Yoshio Okada ,  Yuriko Igarashi

    发明人： Yoshio Okada ,  Yuriko Igarashi

    IPC分类号： B41M5/132 ,  B41M5/165 ,  B41M3/00 ,  B41M5/16

    CPC分类号： B41M5/165

    摘要： Disclosed herein are a recording paper which is partially pressure-sensitized, comprising microcapsules containing a solution of a colorless color former, sheet material and binder, the microcapsules being fixed to a specified part of a surface of the sheet material via the binder painted on the specified part and majority of the fixed microcapsules having at least a part of the microcapsule exposed to outside of the binder, and a process for producing the recording paper which is partially specified.

    摘要翻译： 本文公开了一种部分压敏敏化的记录纸，其包含含有无色成色剂，片材和粘合剂的溶液的微胶囊，所述微胶囊通过涂布在所述片材上的粘合剂固定在片材的表面的特定部分上 指定的部分和大部分具有暴露于粘合剂外部的至少一部分微胶囊的固定微胶囊以及部分指定的记录纸的制造方法。

    Microcapsule for pressure-sensitive recording paper and process for producing the same
    50.
    发明授权
    Microcapsule for pressure-sensitive recording paper and process for producing the same 失效
    用于压敏记录纸的微胶囊及其制造方法

    公开(公告)号：US4562116A

    公开(公告)日：1985-12-31

    申请号：US439431

    申请日：1982-11-05

    申请人： Yoshio Okada ,  Yuriko Igarashi

    发明人： Yoshio Okada ,  Yuriko Igarashi

    IPC分类号： B41M5/124 ,  B01J13/18 ,  B41M5/165 ,  B01J13/02 ,  B32B27/20

    CPC分类号： B41M5/165 ,  B01J13/18 ,  Y10S428/914 ,  Y10T428/2985

    摘要： Disclosed herein is a microcapsule for pressure-sensitive recording paper, wherein the microcapsule contains a solution of color-former and has a membranous wall of resin formed by the polycondensation of a water-soluble cationic urea resin with either (i) at least two prepolymers selected from the group consisting of melamine-formaldehyde prepolymer, a thiourea-formaldehyde prepolymer and a melamine-thiourea-formaldehyde prepolymer or (ii) a melamine-thiourea-formaldehyde prepolymer.

    摘要翻译： 本文公开了一种用于压敏记录纸的微胶囊，其中微胶囊包含成色剂溶液，并且具有通过水溶性阳离子脲树脂与（i）至少两种预聚物的缩聚形成的树脂膜壁 选自三聚氰胺 - 甲醛预聚物，硫脲 - 甲醛预聚物和三聚氰胺 - 硫脲 - 甲醛预聚物或（ii）三聚氰胺 - 硫脲 - 甲醛预聚物。